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Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 9.0 32 Single
D
FEATURES
400 0.55
Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
S G D S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRF740PbF SiHF740-E3 IRF740 SiHF740
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 9.1 mH, RG = 25 , IAS = 10 A (see fig. 12). c. ISD 10 A, dI/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91054 S09-0267-Rev. B, 23-Feb-09 www.vishay.com 1
IRF740, SiHF740
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 400 V, VGS = 0 V VDS = 320 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 6.0 Ab VDS = 50 V, ID = 6.0 Ab VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 10 A, VDS = 320 V, see fig. 6 and 13b
0.49 -
V V/C V nA A S
63 9.0 32 nH ns nC pF
VDD = 200 V, ID = 10 A RG = 9.1 , RD = 20 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact
370 3.8
TJ = 25 C, IS = 10 A, VGS = 0
Vb
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.
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IRF740, SiHF740
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
101
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 4.5 V
101
150 C
25 C
100
100
100
101
10
101
ID = 10 A VGS = 10 V
4.5 V
100
100
101
91054_04
0.0 - 60 - 40 - 20 0
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IRF740, SiHF740
Vishay Siliconix
2500
2000
Capacitance (pF)
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss
150 C 101 25 C
1500
100
10-1 0.50
91054_07
91054_05
20
ID = 10 A VDS = 320 V
103
5 2
102
5 2
10
5 2
4
For test circuit see figure 13
1
5 2
0 0
91054_06
0.1 15 30 45 60 75
91054_08
10
102
103
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IRF740, SiHF740
Vishay Siliconix
10 VGS
VDS
RD
D.U.T. + - VDD
RG
10 V
Pulse width 1 s Duty factor 0.1 %
91054_09
10
1
0 - 0.5
0.2 0.1 0.1 0.05 0.02 0.01 10-2 10-5 10-4 10-3 10-2 0.1 Single Pulse (Thermal Response)
91054_11
VDS tp VDD
D.U.T IAS
+ -
V DD
VDS
10 V tp 0.01
IAS
Fig. 12b - Unclamped Inductive Waveforms
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IRF740, SiHF740
Vishay Siliconix
1200
125
150
91054_12c
10 V QGS
QG
0.2 F
0.3 F
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
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IRF740, SiHF740
Vishay Siliconix
Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer
+ +
RG
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Ripple 5 %
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91054.
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Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
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