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SDT12S60SDT12S60

SDT12S60SDT12S60

Silicon Carbide Schottky Diode

Worlds first 600V Schottky diode

Revolutionary semiconductor material - Silicon Carbide

Switching behavior benchmark

No reverse recovery

No temperature influence on the switching behavior

No forward recovery

thinQ!SiC Schottky Diode

Product Summary

V

RRM

600

V

Q c

30

nC

I

F

12

A

P-TO220-2-2.

V Q c 30 nC I F 12 A P-TO220-2-2. Type Package Ordering Code Marking Pin

Type

Package

Ordering Code

Marking

Pin 1

Pin 2

SDT12S60

P-TO220-2-2.

Q67040-S4470

D12S60

C

A

Maximum Ratings, at T j = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous forward current, T C =100°C

I

F

12

A

RMS forward current, f=50Hz

I

FRMS

17

Surge non repetitive forward current, sine halfwave

I

FSM

36

T C =25°C, t p =10ms

Repetitive peak forward current

I

FRM

49

T j

=150°C, T C =100°C, D=0.1

Non repetitive peak forward current

I FMAX

120

t p =10µs, T C =25°C

i

2 t value, T C =25°C, t p =10ms

i 2 d t

6.48

A²s

Repetitive peak reverse voltage

V

RRM

600

V

Surge peak reverse voltage

V

RSM

600

Power dissipation, T C =25°C

P

tot

88.2

W

Operating and storage temperature

T j , T stg

-55

+175

°C

SDT12S60SDT12S60

SDT12S60SDT12S60

Thermal Characteristics

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - case

R

thJC

- -

 

1.7

K/W

Thermal resistance, junction - ambient, leaded

R

thJA

- -

 

62

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

 

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

Static Characteristics

Diode forward voltage

V

F

     

V

I F =12A, T j =25°C

 

-

1.5

1.7

I F =12A, T j =150°C

-

1.7

2.1

Reverse current

I

R

     

µA

R =600V,

V

T j =25°C

-

40

400

R =600V,

V

T j =150°C

-

100

2000

SDT12S60SDT12S60

SDT12S60SDT12S60

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

AC Characteristics

Total capacitive charge

Q c

-

30

-

nC

R =400V, I F =12A, di F /dt=200A/µs, T j =150°C

V

Switching time

t rr

-

n.a.

-

ns

R =400V, I F =12A, di F /dt=200A/µs, T j =150°C

V

Total capacitance

C

     

pF

R =1V, T C =25°C, f=1MHz

V

-

450

-

R =300V, T C =25°C,

V

f=1MHz

-

45

-

R =600V, T C =25°C,

V

f=1MHz

-

43

-

SDT12S60SDT12S60

SDT12S60SDT12S60

1 Power dissipation

P tot = f (T C )

90 W 70 60 50 40 30 20 10 0 0 20 40 60 80
90
W
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
°C
180
T
C
P tot

3 Typ. forward characteristic I F = f (V F ) parameter: T j , tp = 350 µs

24 A 150°C 125°C 100°C 16 25°C -40°C 12 8 4 0 0 0.5 1
24
A
150°C
125°C
100°C
16
25°C
-40°C
12
8
4
0
0
0.5
1
1.5
V
2.5
V F
I
F

2 Diode forward current

I F = f (T C ) parameter: T j 175 °C

24 A 20 18 16 14 12 10 8 6 4 2 0 0 20
24
A
20
18
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140 °C
180
T C
I
F

4 Typ. forward power dissipation vs.

average forward current P F(AV) =f( I F ) T C =100°C, d = t p /T

44 W d=0.1 d=0.2 36 d=0.5 d=1 32 28 24 20 16 12 8 4
44
W
d=0.1
d=0.2
36
d=0.5
d=1
32
28
24
20
16
12
8
4
0
0
2
4
6
8
10
12
A
16
I F(AV)
P
F(AV)
SDT12S60SDT12S60

SDT12S60SDT12S60

5 Typ. reverse current vs. reverse voltage I R =f(V R ) 2 10 µA
5 Typ. reverse current vs. reverse voltage
I R =f(V R )
2
10
µA
150°C
1
125°C
10
100°C
25°C
0
10
-1
10
-2
10
-3
10
100
150 200
250 300
350 400
450 500
V
600
V R
I R

7 Typ. capacitance vs. reverse voltage C= f(V R ) parameter: T C = 25 °C, f = 1 MHz

600 pF 500 450 400 350 300 250 200 150 100 50 0 10 0
600
pF
500
450
400
350
300
250
200
150
100
50
0
10 0
10 1
10 2
V
10 3
V R
C

6 Transient thermal impedance Z thJC = f (t p ) parameter : D = t p /T

1 SDT12S60 10 K/W 0 10 -1 10 D = 0.50 -2 10 0.20 0.10
1
SDT12S60
10
K/W
0
10
-1
10
D = 0.50
-2
10
0.20
0.10
0.05
0.02
-3
10
single pulse
0.01
-4
10
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 0
t
p
Z thJC

8 Typ. C stored energy E C =f (V R )

9 µJ 7 6 5 4 3 2 1 0 0 100 200 300 400
9
µJ
7
6
5
4
3
2
1
0
0
100
200
300
400
V
600
V R
E
C
SDT12S60SDT12S60

SDT12S60SDT12S60

9 Typ. capacitive charge vs. current slope Q c =f(d i F /d t ) parameter: T j = 150 °C

40 nC I F *2 I F 32 28 I F *0.5 24 20 16
40
nC
I F *2
I
F
32
28
I F *0.5
24
20
16
12
8
4
0
100
200
300
400
500
600
700
800 A/µs 1000
di F /dt
Q c
SDT12S60SDT12S60

SDT12S60SDT12S60

H

A N P E D U V B F W J X L G T
A
N
P
E
D
U
V
B
F
W
J
X
L
G
T
C
M
K

TO-220-2-2

   

dimensions

 

symbol

[mm]

[inch]

 

min

max

min

max

A

9.70

10.10

0.3819

0.3976

B

15.30

15.90

0.6024

0.6260

C

0.65

0.85

0.0256

0.0335

D

3.55

3.85

0.1398

0.1516

E

2.60

3.00

0.1024

0.1181

F

9.00

9.40

0.3543

0.3701

G

13.00

14.00

0.5118

0.5512

H

17.20

17.80

0.6772

0.7008

J

4.40

4.80

0.1732

0.1890

K

0.40

0.60

0.0157

0.0236

L

1.05

typ.

0.41

typ.

M

2.54

typ.

0.1 typ.

N

4.4

typ.

0.173

typ.

P

1.10

1.40

0.0433

0.0551

T

2.4

typ.

0.095

typ.

U

6.6

typ.

0.26

typ.

V

13.0

typ.

0.51

typ.

W

7.5

typ.

0.295

typ.

X

0.00

0.40

0.0000

0.0157

SDT12S60SDT12S60

SDT12S60SDT12S60

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

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