SDT12S60

Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery

thinQ! SiC Schottky Diode

Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.

V nC A

Type SDT12S60

Package P-TO220-2-2.

Ordering Code Q67040-S4470

Marking D12S60

Pin 1 C

Pin 2 A

Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz
TC=25C, tp=10ms

Symbol IF IFRMS

Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175

Unit A

Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150C, TC=100C, D=0.1

IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg

Non repetitive peak forward current

tp=10s, TC=25C

i 2t value, TC=25C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25C Operating and storage temperature

As V W C

Rev. 2.1

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2004-04-05

SDT12S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 1.7 62 K/W Symbol min. Values typ. max. Unit

Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=12A, Tj=25C IF=12A, Tj=150C

Symbol min. VF IR -

Values typ. max.

Unit

V 1.5 1.7 40 100 1.7 2.1 A 400 2000

Reverse current
V R=600V, T j=25C V R=600V, T j=150C

Rev. 2.1

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SDT12S60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C

Unit max. nC ns pF

typ. 30 n.a.

Qc trr C

Switching time
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C

Total capacitance
V R=1V, T C=25C, f=1MHz V R=300V, T C=25C, f=1MHz V R=600V, T C=25C, f=1MHz

450 45 43

Rev. 2.1

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2004-04-05

SDT12S60
1 Power dissipation Ptot = f (TC)
90

2 Diode forward current IF = f (TC)

parameter: Tj175 C
24

A
20

70 60

18 16

Ptot

IF
50 40 30 20 10 0 0 20 40 60 80 100 120 140

14 12 10 8 6 4 2

C 180 TC

0 0

20

40

60

80

100 120 140

C TC

180

3 Typ. forward characteristic IF = f (VF)

4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100C, d = tp/T
44

parameter: Tj , tp = 350 s
24

W A
150C 125C 100C 25C -40C d=0.1 d=0.2 36 d=0.5 d=1

16

PF(AV)
1 1.5 2.5

32 28 24

IF
12

20 8 16 12 4 8 4 0 0 0.5

V VF

0 0

10

12

16 A IF(AV)

Rev. 2.1

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SDT12S60
5 Typ. reverse current vs. reverse voltage I R=f(VR)
10
2

6 Transient thermal impedance ZthJC = f (t p)

parameter : D = t p/T
10 1
SDT12S60

A
150C
10 1 125C

K/W

100C 25C

10 0

10 0

ZthJC

IR

10 -1

D = 0.50 10
-1

10

-2

0.20 0.10 0.05 0.02 0.01

10

-2

10

-3

single pulse

10 -3 100 150 200 250 300 350 400 450 500

V VR

600

10 -4 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

tp

7 Typ. capacitance vs. reverse voltage C= f(V R)

8 Typ. C stored energy EC=f(V R)

9

parameter: TC = 25 C, f = 1 MHz
600

pF
500 450

J
7 6 5 4 3 2 1 0 0

350 300 250 200 150 100 50 0 0 10 10

1

10

V VR

10

EC

400

100

200

300

400

V VR

600

Rev. 2.1

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SDT12S60
9 Typ. capacitive charge vs. current slope

Q c=f(diF /dt) parameter: Tj = 150 C

40

nC
32 28

IF *2

IF

Qc

IF *0.5

24 20 16 12 8 4 0 100 200 300 400 500 600 700 800A/s 1000

diF/dt

Rev. 2.1

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2004-04-05

SDT12S60
TO-220-2-2
A P D U H B V F W J G E
symbol min A B C D E F G H J K L M N P T U V W 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157

N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236

1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40

0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157

X L

T K

Rev. 2.1

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2004-04-05

SDT12S60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 2.1

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2004-04-05