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by MPF102/D

SEMICONDUCTOR TECHNICAL DATA

  

NChannel Depletion

 

1 DRAIN

3
GATE

2 SOURCE

MAXIMUM RATINGS
Symbol

Value

Unit

Drain Source Voltage

Rating

VDS

25

Vdc

Drain Gate Voltage

VDG

25

Vdc

Gate Source Voltage

VGS

25

Vdc

Gate Current

IG

10

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

350
2.8

mW
mW/C

Junction Temperature Range

TJ

125

Storage Temperature Range

Tstg

65 to +150

1
2

CASE 2904, STYLE 5

TO92 (TO226AA)

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

V(BR)GSS

25

Vdc

2.0
2.0

nAdc
Adc

OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 10 Adc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)

IGSS

Gate Source Cutoff Voltage

(VDS = 15 Vdc, ID = 2.0 nAdc)

VGS(off)

8.0

Vdc

Gate Source Voltage

(VDS = 15 Vdc, ID = 0.2 mAdc)

VGS

0.5

7.5

Vdc

IDSS

2.0

20

mAdc

2000
1600

7500

ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

yfs

Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yis)

800

mmhos

Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yos)

200

mmhos

Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

7.0

pF

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

3.0

pF

1. Pulse Test; Pulse Width

mmhos

v 630 ms, Duty Cycle v 10%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

MPF102
POWER GAIN
24
f = 100 MHz

PG , POWER GAIN (dB)

20

16

12

400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V

8.0
4.0
2.0

4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)

12

14

Figure 1. Effects of Drain Current

Reference
Designation
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE

C2

L1

C4
C5
Rg

Adjust VGS for

ID = 50 mA
VGS < 0 Volts

*L2
*L3

TO 500
LOAD

L2

CASE

L3
C6

C7
VGS

*L1

C3

C1

NOTE:

COMMON
VDS
+15 V

ID = 5.0 mA

The noise source is a hotcold body

(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).

17 turns, (approx. depends upon circuit layout) AWG #28

enameled copper wire, close wound on 9/32 ceramic coil
form. Tuning provided by a powdered iron slug.
41/2 turns, AWG #18 enameled copper wire, 5/16 long,
3/8 I.D. (AIR CORE).
31/2 turns, AWG #18 enameled copper wire, 1/4 long,
3/8 I.D. (AIR CORE).

**L1

**L2
**L3

VALUE
100 MHz

400 MHz

C1

7.0 pF

1.8 pF

C2

1000 pF

17 pF

C3

3.0 pF

1.0 pF

C4

112 pF

0.88.0 pF

C5

112 pF

0.88.0 pF

C6

0.0015 F

0.001 F

C7

0.0015 F

0.001 F

L1

3.0 H*

0.2 H**

L2

0.15 H*

0.03 H**

L3

0.14 H*

0.022 H**

6 turns, (approx. depends upon circuit layout) AWG #24

enameled copper wire, close wound on 7/32 ceramic coil
form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8 I.D.
(AIR CORE).
1/2 turn, AWG #16 enameled copper wire, 1/4 I.D.
(AIR CORE).

Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit

Motorola SmallSignal Transistors, FETs and Diodes Device Data

MPF102
NOISE FIGURE
(Tchannel = 25C)
10

6.5
ID = 5.0 mA

VDS = 15 V
VGS = 0 V

5.5
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

8.0

6.0
f = 400 MHz
4.0

2.0

4.5
f = 400 MHz
3.5

2.5

100 MHz

100 MHz

1.5
0

2.0

4.0 6.0 8.0

10
12
14
16
VDS, DRAINSOURCE VOLTAGE (VOLTS)

18

20

4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)

2.0

Figure 3. Effects of DrainSource Voltage

12

14

Figure 4. Effects of Drain Current

INTERMODULATION CHARACTERISTICS
Pout , OUTPUT POWER PER TONE (dB)

+ 40
3RD ORDER INTERCEPT

+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz

0
20
40
60
80
100

FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS

120
140
160
120

100

3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS

80
60
40
20
Pin, INPUT POWER PER TONE (dB)

+ 20

Figure 5. Third Order Intermodulation Distortion

Motorola SmallSignal Transistors, FETs and Diodes Device Data

MPF102
COMMON SOURCE CHARACTERISTICS

30
20

grs , REVERSE TRANSADMITTANCE (mmhos)

brs , REVERSE SUSCEPTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)

bis @ IDSS

10
7.0
5.0
3.0

gis @ IDSS

2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10

bis @ 0.25 IDSS

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5

0.25 IDSS

0.3
0.2
0.1
0.07
0.05

grs @ IDSS, 0.25 IDSS

10

20

gfs @ IDSS
gfs @ 0.25 IDSS

3.0
2.0
1.0
0.7
0.5

|bfs| @ IDSS
|bfs| @ 0.25 IDSS

500 700 1000

5.0
bos @ IDSS and 0.25 IDSS

2.0
1.0
0.5
0.2

gos @ IDSS

0.1
0.05
gos @ 0.25 IDSS

0.02
0.01
20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 8. Forward Transadmittance (yfs)

50 70 100
200 300
f, FREQUENCY (MHz)

10

10
7.0
5.0

0.3
0.2
10

30

Figure 7. Reverse Transfer Admittance (yrs)

gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)

Figure 6. Input Admittance (yis)

20

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 9. Output Admittance (yos)

Motorola SmallSignal Transistors, FETs and Diodes Device Data

MPF102
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

0
1.0

40

350
100

340

330
320

40

310

50

20

10

330

0.4

320

310

ID = IDSS, 0.25 IDSS

300
0.8

900

500

ID = IDSS

60

800
300

400

60

500

0.7

600
0.6

300
0.1

500

70

290

400

700
800

700
800

290

0.2
700

600

600

90

340

0.3
400

80

350

300

200

50

70

200

100
0.9

30

ID = 0.25 IDSS

280

80

300

280

0.0

200

900

270

90

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

900

150

160

170

180

190

200

210

150

160

Figure 10. S11s

30

20

10

350

170

340

330

30

20

10

80
90

700

110

0.4

800

600
100

210

0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8

310

50

300

60

290

70

280

80

270

90

270

260

100

260

250

110

250

240

120

240

230

130

230

220

140

220

320

310

300
0.7

290

900
700

600

200

40

0.5
60
900

190

320

0.6
50

800

180

Figure 11. S12s

40

70

270

100

500

0.3
ID = 0.25 IDSS
500

0.3
100

400

400

280

0.6

300

200

0.4

100

0.5

300
120

ID = IDSS

200

130
0.6

140
150

160

170

180

190

200

210

Figure 12. S21s

Motorola SmallSignal Transistors, FETs and Diodes Device Data

150

160

170

180

190

200

210

Figure 13. S22s

5

MPF102
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)

10
7.0
5.0

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)

gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)

20

gig @ IDSS

3.0

grg @ 0.25 IDSS

2.0
1.0
0.7
0.5

big @ IDSS
big @ 0.25 IDSS

0.3
0.2

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

0.5
0.3
brg @ IDSS

0.2
0.1
0.07
0.05

0.25 IDSS

0.03
0.02
0.01

0.007
0.005

gig @ IDSS, 0.25 IDSS

10

10
7.0
5.0

gfg @ IDSS

3.0

gfg @ 0.25 IDSS

2.0
1.0
0.7
0.5
bfg @ IDSS

0.3

brg @ 0.25 IDSS

0.2

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

1.0
0.7
0.5

bog @ IDSS, 0.25 IDSS

0.3
0.2
0.1
0.07
0.05

gog @ IDSS

0.03
0.02
gog @ 0.25 IDSS

0.1

0.01
10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 16. Forward Transfer Admittance (yfg)

30

Figure 15. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)

Figure 14. Input Admittance (yig)

20

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 17. Output Admittance (yog)

Motorola SmallSignal Transistors, FETs and Diodes Device Data

MPF102
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

350

340

330

30

0.7

40

100

310

50

300

60

290

70

280

80

350

340

330
320

0.04

200

300

0.03

400

100

500
200

0.5

ID = IDSS
0.4

310

600

300

60
70

40

10

ID = 0.25 IDSS

0.6
50

320

20

0.02

700

400
500

300

800

600
900

0.01

290

700
80

800

0.3

900

90

270

100

260

90

250

270

500
600

100
ID = IDSS

110

280

0.0
100

110

700

600
700

260

ID = 0.25 IDSS

250

0.01

800
120

240

120

240

800
0.02
900

130

230

130

230
900

140

220
150

160

170

180

190

200

140

210

20

10

350

150

160

170

340

330

30
320

20

10

40

0
1.5
1.0
100

100
0.4
50

180

190

200

210

340

330

Figure 19. S12g

0.5

40

220

0.04

Figure 18. S11g

30

0.03

ID = IDSS

350
300
200

500

320

400

700
600
800

0.9

900

310

50

300

60

290

70

280

80

270

90

270

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

100

ID = IDSS, 0.25 IDSS

0.3

0.8

60
0.2

70

310

ID = 0.25 IDSS

80
0.1

300
0.7

290
280

0.6

900

90
900

150

160

170

180

190

200

210

Figure 20. S21g

Motorola SmallSignal Transistors, FETs and Diodes Device Data

150

160

170

180

190

200

210

Figure 21. S22g

7

MPF102
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

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MPF102/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data

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