COMMON SOURCE DC ANALYSIS Circuit Diagram

Using the LEVEL1 MOS model parameter values in the table ,the transfer characteristics and the output characteristics (I-V Characteristics )are plotted using ngspice. Model parameters for a typical CMOS Bulk Process suitable for Hand Calculations Using the Simple models with values based on a 0.8 m Silicon-Gate Bulk CMOS n-Well. Parameter Parameter Description symbol
V TH

Typical parameter value n-Channel

0.70.15

P-Channel
0.70.15 50.010 %

Units V
A /V 2 V 1/ 2
V
1

Threshold voltage ( V BS =0) Transconductane Parameter Bulk Threshold Parameter Channel length modulation parameter Surface potential at strong inversion

110.010 %

0.4

0.57

0.04(L=1 m ) 0.05(L=1 m ) 0.01(L=2 m ) 0.01(L=2 m ) 0.7 0.8

2 F

Assumptions Second order effects(Mainly Body effect and Channel length Modulation) are neglected.

That is 1) Bulk voltage or Body voltage is zero. 2) Channel length modulation coefficient , =0. TRANSFER CHARACTERISTICS NETLIST DC ANALYSIS OF COMMON SOURCE CIRCUIT *model description .MODEL MOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 PHI=0.7 M1 2 1 0 0 MOS1 W=5.0U L=1.0U VDS 2 0 5 VGS 1 0 1 *output plot description .CONTROL set color0=rgb:f/f/f set color1=rgb:0/0/0 DC VDS 0 5 0.2 VGS 1 5 1 PLOT -vds#branch vs v(2) DC VGS 0 5 0.2 plot -vds#branch vs v(1) .ENDC .END ID Vs VDS curve

ID Vs VGS curve

ANALYSIS From the transfer characteristics plot it is clear that the value of threshold voltage almost equals to 0.7V. The I-V Characteristics plot gives the variation of drain current with drain to source voltage for different values of gate to source voltage. MOS transistor enters into saturation region when VDS>=VGS-VTH Drain to source current I DS= n C ox
1 2 W 2 (V GSV TH ) L

COMMON SOURCE WITH SECOND ORDER EFFETCS 1 CHANNEL LENGTH MODULATION

The same circuit can be analysed by including the channel length modulation coefficient parameter for 0.8 m Technology. NETLIST DC ANALYSIS OF COMMON SOURCE CIRCUIT WITH CHANNEL LENGTH MODULATION *model description .MODEL MOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 LAMBDA =0.04 PHI=0.7 M1 2 1 0 0 MOS1 W=5.0U L=1.0U VDS 2 0 5 VGS 1 0 1 *output plot description .CONTROL set color0=rgb:f/f/f set color1=rgb:0/0/0 DC VDS 0 5 0.2 VGS 1 5 1 PLOT -vds#branch vs v(2) DC VGS 0 5 0.2 plot -vds#branch vs v(1) .ENDC .END

ID Vs VDS curve

ID Vs VGS curve

ANALYSIS When channel length modulation parameter is included in the model parameters for MOS transistor ,it is clear from the I-V characteristics that the drain current is increased from the previous value(Obtained when plotted without cosidering the channel length modulation).Cosidering the channel length modulation ,Drain current at satuaration is given by
1 W I DS= n C ox (V GSV TH )2 (1+ V DS ) 2 L

From the equation it is clear that the satuaration current is not a constant value,it depends on the VDS value and . As a result the satuaration current plot has a small slope compared with the previous plot (without cosidering the previous plot).

BODY EFFECT Circuit diagram

The circuit is redrawn with a body voltage.That is ,the body or the substrate or the bulk is connected to a voltage source. NETLlST DC ANALYSIS OF COMMON SOURCE CIRCUIT WITH BODY EFFECT *model description .MODEL MOS1 NMOS VT0=0.7 KP=110U GAMMA=0.4 PHI=0.7 M1 2 1 0 3 MOS1 W=5.0U L=1.0U VDS 2 0 5 VGS 1 0 1 V032 *output plot description .CONTROL set color0=rgb:f/f/f set color1=rgb:0/0/0 DC VDS 0 5 0.2 VGS 1 5 1 PLOT -vds#branch vs v(2) DC VGS 0 5 0.2 plot -vds#branch vs v(1) .ENDC .END

ID Vs VDS curve

ID Vs VGS curve

ANALYSIS

When cosidering the body effect of MOS transistors, 1.The threshold voltage value increases. 2.Drain current decreases. When body or substrate is connected to a voltage source VSB increases and the threshold voltage is given by V TH =V T0+ ( 2 F+V SB 2 F ) As the threshold voltage increases (VGS-VTH) voltage or overdrive voltage decreases and there fore drain current decreases.
1 W I DS= n C ox (V GSV TH )2 2 L