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600mA. OUTPUT CURRENT CAPABILITY PER CHANNEL 1. 2A PE AK O UTPUT CURRENT (NO N REPETITIVE) PER CHANNEL ENABLE FACILITY OVERTEMPERATURE PROTECTION LOGICAL 0 INPUT VOLTAGE UP TO 1.5v (HIGH NOISE IMMUNITY INTERNAL CLAMPS DIODES DESCRIPTION The L293D is a monolithic integrated high voltage, high current four channel vriver designed to accept standard DTL or TTL logic levels and drive inductive loads (such as relays solenoides, DC and stepping motors) and switching power transistors. To simplify use as two bridges is pair of channels is equiped with an enable input. A separate supply innput is provited formthe logic, allowing operation at a low voltage and internal clamp diodes are included. BLOCK DIAGRAM
Powerdip 12+2+2
This device is suitable for use in switching applications at frequencies up to 5 KHz. The L293D is assembled in a 16 lead plastic packege which has 4 center pins connected together and used for heatsinking.
October 1991
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L293D
ABSOLUTE MAXIMUM RATINGS
Symbol VS VSS Vi Ven Io Ptot Tstg, Tj Supply Voltage Logic Supply voltage Input voltage Enable voltage Peak output current (100s non repetitive) Total power dissipation at Tground-pins = 80C Storage and junction temperature Parameter Value 36 36 7 7 1.2 5 -40 to 150 Unit V V V V A W C
CONNECTION DIAGRAM
THERMAL DATA
Symbol Rth-j-case Rth j-case Thermal resistance junction-case Thermal resistance junction-ambient Parameter max max Value 14 80 Unit C/W C/W
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L293D
ELECTRICAL CHARACTERISTICS (For each channel, Vs = 24V, Vss = 5V, Tamb = 25 C, unless otherwise specified)
Symbol Vs Vss Is Parameter Supply voltage Logic supply voltage (pin 16) Total quiescent supply current (pin 8) Vi = L Vi = H Io = 0 Io = 0 Ven = H Ven = H Ven = L Iss Total quiescent logic supply current (pin 16) Vi = L Vi = H Io = 0 Io = 0 Ven = H Ven = H Ven = L VIL VIH Input low voltage (pin 2, 7, 10, 15) Input high voltage (pin 2, 7, 10, 15) Vss 7V Vss > 7V IIL IIH VenL VenH Low voltage input current (pin 2, 7, 10, 15) High voltage input current (pin 2, 7, 10, 15) Enable low voltage (pin 1, 9) Enable high voltage (pin 1, 9) Vss 7V Vss 7V IenL ienH VCEsatH VCEsatL VF tr tf ton toff
(*) See fig.1
Test conditions
Typ.
Max. 36 36
Unit V V mA
2 16
6 24 4
VIL = 1.5V 2.3 VIH Vss -0.6V -0.3 2.3 2.3 -30 30
Low voltage enable current (pin 1, 9) High voltage enable current (pin 1, 9) Source output saturation voltage (pin 3, 6, 11, 14) Sink output saturation voltage (pins 3, 6, 11, 14) Clamp diode forward voltage Rise time (*) Fall time (*) Turn-on delay (*) Turn-off delay (*)
VenL = 1.5V 2.3V VenH Vss -0.6V Io = -0.6A Io +0.6A Io = 600 mA 0.1 to 0.9 Vo 0.9 to 0.1 Vo 0.5 Vi to 0.5 Vo 0.5 Vi to 0.5 Vo
1.4
1.8 1.2
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L293D
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L293D
POWERDIP PACKAGE MECHANICAL DATA
DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 17.78 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 20.0 0.346 0.100 0.700 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.787 0.055 inch TYP. MAX.
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L293D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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