2010

Product Catalog

Discrete Semiconductors

Bipolar Transistors Digital Transistors

Bipolar Transistors
ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

Digital Transistors
Digital transistors, pioneered by ROHM, incorporate resistor(s) for digital circuits. The broad lineup includes space-saving, ultra-compact types available in a range of internal resistance configurations.

01

Bipolar Transistors / Digital Transistors

Contents
Close Up

Ultra-Compact Package : VMN3 Compact Hybrid Package : VMT6 Complex Bipolar Transistors : MPT6 Transistors for Solenoid/Motor/Relay Drive Low VCE(sat) Transistors High-Speed Switching Transistors : MPT3 Muting Transistors

3 4 5

6 7

9 10

Lineup
Bipolar Transistors Complex Bipolar Transistors Dimensions 11 15 19 Digital Transistors Complex Digital Transistors Part No. Explanation 17 18 20

Bipolar Transistors / Digital Transistors

02

Discrete Semiconductors

Ultra-Compact Package : VMN3

60% smaller mounting space, 35% thinner
Summary Features Applications

This series of ultra-compact, low-profile transistors reduces mounting area by 60% and height by 35% compared with conventional VMT3 package types.

Ultra-compact Low profile

Switching in portable devices

Ultra-compact. Low profile.

Compared to the conventional VMT3 package (1.2x1.2, t=0.5mm), ROHM's new VMN3 (0.6x1.0, t=0.37mm) decreases mounting area by 60% and height by 35%.

Conventional

NEW

(Unit : mm)

VMT3
1.2

Mounting area
Reduced

VMN3
0.6

60%
1.0

1.2

0.8

0.8
1.0 x 0.6 x 0.37 1.0 x 0.5 x 0.5

Height
t=0.50

35

Less

t=0.37

Volume equivalent to 1005-sized chip resistors

Excellent fillet visibility and superior joint strength

Features 1 Features 2

Greater fillet visibility than bottom electrode types

No fillet formed (Competitor)

Excellent solder connection 1.5 times

Competitors

Fillet formed (ROHM)

ROHM

4.23N
Difficult to verify solder connection Highly visible fillet formation makes verification easy

6.05N

Pressure Test (Comparison using equivalent competitor package)

Lineup

Bipolar Transistors
Part No. 2SA2199 2SC6114 Polarity PNP NPN

VCEO (V)
50

IC (mA)
100

hFE @VCE / IC 120 to 390 120 to 390

6V

(V)
0.3

VCE(sat)Max. @IC / IB
25mA

/ 2mA

/ 2.5mA

50

100

6V / 2mA

0.3

25mA / 2.5mA

Digital Transistors
Part No. DTA114EB DTC114EB DTA144EB DTC144EB Polarity PNP NPN PNP NPN

VCC (V)
50

IO (mA)
50

R1 K 10 10 47 47

R2 K 10 10 47 47

GI 30 or more 30 or more 68 or more 68 or more

50
50

50
50

50

50

03

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Compact Hybrid Package : VMT6

Mounting space reduced 43%
Summary Features Applications

The new compact VMT6 complex package reduces mounting area by 43% over conventional EMT6 units and 50% compared to dual-VMT3 configurations.

Ultra-small Complex type

General-purpose switching applications in portable devices Current mirror circuits and more

Ultra-compact Complex
The new VMT6 package reduces mounting area by 43% over conventional EMT6 types. In addition, making the product complex by adding an additional transistor element reduces package size by 50% over conventional dual-VMT3 package solutions (1.2x1.2, t=0.5mm).

Conventional

NEW

Conventional

(Unit : mm)

EMT6
1.2

VMT6

VMT32
1.2

Mounting area
Reduced

Mounting area
1.2
Reduced

43%
1.2

50%

1.2

0.8

1.2

0.92

0.92 1.2 t=0.50

t=0.50

1.2

0.8

t=0.50

Guaranteed hFE characteristics

The hFE of both internal transistors are guaranteed to be nearly identical : hFE1/hFE2 = 0.9-1.1 (VT6T11, VT6T12, VT6x11, VT6x12)

Current Mirror Circuit

Vcc

Lineup

Bipolar Transistors
Part No. VT6T1 VT6T2 VT6X1 VT6X2 VT6T11 VT6T12 VT6X11 VT6X12 VT6Z1 VT6Z2

VCEO (V)
20 50

IC (mA)
200 100

hFE

hFE Ratio

Pc (W)

Equivalent Circuit Diagram

20 50
20 50

200 100
200 100

120 to 560 0.9 to 1.1

0.15

20 50
20 50

200 100
200 100

Suitable for current mirror circuit

/ 20 / 50

/ 200 / 100

Bipolar Transistors / Digital Transistors

04

Discrete Semiconductors

Complex Bipolar Transistors : MPT6

Mounting area and parts reduced by half
Summary Features Applications

The new MPT6 package integrates two conventional MPT3 units, resulting in 50% smaller mounting area and 35% less height.

Space saving

Buffers Collector resonance circuits Motor drive circuits

Thin, compact package

The new package makes it possible to reduce mounting area as well as the number of transistors by half.

(Unit : mm)

MPT3 (MPT32)
Mounting area
Reduced

MPT6

50%

Height

35% Lower profile

Dimensions

Circuit Examples

Buffer circuit
Single-die products are also under development.
Top A single large-current element can be housed.

Collector resonance circuit

Motor drive circuit

Top

Bottom

Bottom

Lineup
Part No. MP6T1 MP6T2 MP6T3 MP6X1 MP6X2 MP6X3 MP6Z1 MP6Z2 MP6Z3 Internal Circuit Equivalent Element Transistors 2SB11322 2SB11882 2SA20712 2SD16642 2SD17662 2SC58242 2SB1132 2SD1664 2SB1188 2SD1766 2SA2071 2SC5824 VCEO (V) 32 32 60 32 32 60 32 32 32 32 60 60 IC (A) 1 2 3 1 2 3 1 1 2 2 3 3 hFE 120 to 390 120 to 390 120 to 270 120 to 390 120 to 390 120 to 270 120 to 390 120 to 390 120 to 390 120 to 390 120 to 270 120 to 270

MP6H1

DTDG14GP2

6010

300 or more

05

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Transistors for Solenoid/Motor/Relay Drive

40% smaller mounting area
Summary Features Applications

All functions required for motor drive, including the clamping diode, current limiting resistor, and protection resistor, are integrated into one package, reducing mounting area by 40% over discrete solutions.

Space saving Automotive systems High breakdown resistance (e.g. motor/relay drives) Protection function

High breakdown resistance in a space-saving design

Back EMF generated by coils in the motor is absorbed by t h e bu i l t - i n c l a m p d i o d e fe a t u r i n g h i g h b r e a k d ow n resistance. Current limiting and protection resistors are also integrated, reducing mounting area by up to 40%.

Monolithic Motor Drive Solution

Current Limiting Resistor R1

Malfunction Prevention Resistor R2

Clamping Diode Current Limiting Resistor Transistor

Clamping Diode

Mounting area Reduced

Transistor
Malfunction Prevention Resistor

40

Transistor for Solenoid Motor Driver

Characteristics Comparison The die is protected from back electromotive force by the internal clamping diode. No clamping diode
Back electromotive voltage

Circuit Example

Motor drive circuit

ROHM Driver with Clamping Diode

Integrated in one package

Input resistor (for current limiting) Pull-down resistor (for protection) Clamping diode Transistor

IC
Back electromotive voltage is absorbed by the clamping diode

Saves space and requires fewer parts Integrated clamping diode ensures high breakdown resistance
Lineup
Package Part No.
DTDG23YP MPT3 Pc=0.5W DTDG14GP
10k 10k

Internal Circuit
2.2k

VCEO(VCC) (V) 6010

IC(IO) (A) 1

hFE (GI) 300 or more

Built-in resistor enables direct drive operation (from IC) Equipped with pull-down resistor to prevent noise-induced malfunctions

6010

300 or more

CPT3 (D-PAK) Pc=1W TSMT6 Pc=0.5W

2SD2143
3.5k 300

6010

1k to 10k

QSH29

10k

6010

0.5

500 or more

MPT6 Pc=2W

MP6H1

10k

6010

300 or more

Bipolar Transistors / Digital Transistors

06

Discrete Semiconductors

Low VCE(sat) Transistors

80% lower VCE(sat) than conventional products
Summary Features Applications

A broad array of surface mount package types are offered, from VMT3 to MPT3. Ideal for portable devices requiring low energy consumption.

Low VCE(sat)

Switching in portable devices DC/DC converters

Low VCE(sat)
VCE(sat) is reduced by 80% vs. conventional
V CE (sat) (V)

V CE (sat) -IC
1 IC/I B = 20 Pulsed Ta = 25C 0.1 1

V CE (sat) -IC

2SA1577

2SB1732
V CE (sat) (V)
0.1

IC/I B = 20 Pulsed Ta = 25C

2SB1690
2SB1197K

products, contributing to increased power savings. The broad lineup is available in a number of package types, including VMT3 and MPT3 with collector currents up to 6A. Optimized for a variety of applications, especially portables.

80% Down
0.01

QST2
0.01

80% Down

0.001 0.001 0.01 0.1 1 10

0.001 0.001 0.01 0.1 1 10

IC (A)

IC (A)

Lineup

Single Type (Surface Mount Type)

Package VMT3 EMT3 UMT3 SMT3 VCEO IC Pc=0.2W V A PNP 2SA2119K 2SB1690K 2SB1695K NPN 2SD2653K 2SD2657K MPT3 IC VCEO V A 12 12 12 30 30 30 0.5 1.5 2 0.4 1 1.5 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680

Polarity Application

Pc=0.15W PNP 2SA2030 NPN 2SC5663 2SD2696 PNP 2SA2018 TUMT6

Pc=0.15W NPN 2SC5585 TSMT3 PNP 2SB1689 2SB1694

Pc=0.2W NPN 2SD2652 2SD2656 TSMT6

Low VCE sat

Package

TUMT3

Polarity Application

Pc=0.4W PNP 2SB1732 2SB1730 NPN 2SD2702 2SD2700 2SD2703 2SD2701 PNP US6T6 US6T4 US6T7 US6T5

Pc=0.4W NPN US6X5 US6X3 US6X6 US6X4 PNP 2SB1709 2SB1690 2SB1705 2SB1707 2SB1710 2SB1695 2SB1706 2SB1708

Pc=0.5W NPN 2SD2674 2SD2653 2SD2670 2SD2672 2SD2675 2SD2657 2SD2671 2SD2673 PNP QST6 QST4 QST2 QST7 QST5 QST3

Pc=0.5W NPN QSX5 QSX3 QSX1 QSX6 QSX4 QSX2 PNP 2SB1697 2SB1713 2SB1698 2SB1714

Pc=0.5W NPN 2SD2661 2SD2678 2SD2662 2SD2679

12 12 12 12 12 30 30 30 30 30

1.5 2 3 4 6 1 1.5 2 3 5

270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680

Low sat VCE

2SB1733 2SB1731

1 : When mounted on a recommended land pattern. 2 : For hFE please refer to the specifications Note : (-) symbol omitted for PNP elements.

07

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Dual Type (Surface Mount Type)

Package
EMT5 / EMT6 UMT5 / UMT6 SMT5 / SMT6 TUMT5 / TUMT6 TSMT5 / TSMT6

Configuration Application
Equivalent Circuit Diagram (TOP View EMT18 UMT18N UMX18N Part No.
IMT18

Equivalent Element Transistors

VCEO V ImA C

hFE

Preamp
PNP2

US6T8 US6T9

QST8 QST9

2SA20182 2SB17092 2SB17102 2SC55852 2SD26962 2SD26742 2SD26752 2SA2018 2SC5585 2SA2018 2SC2412K 2SB1690 2SD2653 2SB1695 2SD2657 2SB1705 2SD2670 2SB1706 2SD2671 2SA2018 RB521S-30 2SB1689 RB461F 2SB1710 RB461F 2SC5585 RB521S-30 2SD2652 RB461F 2SD2675 RB461F

12 12 30 12 30 12 30 12 12 12 50 12 12 30 30 12 12 30 30 12 30 12 20 30 20 12 30 12 20 30 20

500

270 to 680

1.5 A 270 to 680 1 A 270 to 680 500 400 270 to 680 270 to 680

Driver
EMX18

US6X7 US6X8

QSX7 QSX8

Preamp
EMX28 NPN2 1.5 A 270 to 680 1 A 270 to 680 500 500 500 150 270 to 680 270 to 680 270 to 680 120 to 560

Driver
EMZ7

QSZ1 QSZ2 QSZ3 QSZ4

Preamp
EMZ8 PNP NPN

2 A 270 to 680 2 A 270 to 680 1.5 A 270 to 680 1.5 A 270 to 680 3 A 270 to 680 3 A 270 to 680 2 A 270 to 680 2 A 270 to 680 500 200 270 to 680

DC/DC Converter

EML4 PNPDi

UML4N

EML6

FML9

US5L9

QSL9

1.5 A 270 to 680 700 1 A 270 to 680 700 500 200 270 to 680

DC/DC Converter

US5L11

QSL11

UML6N

NPNDi

FML10

US5L10 US5L12

QSL10 QSL12

1.5 A 270 to 680 700 1 A 270 to 680 700

Note : Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

Bipolar Transistors / Digital Transistors

08

Discrete Semiconductors

High-Speed Switching Transistors : MPT3

Offspeed increased 35% for greater energy savings
Summary Features Applications

Optimization of cell structure results in faster switching

High-speed switching

Buffer circuits Motor drive circuits Power supplies, and more

speeds and lower switching loss, reducing heat generation significantly.

High-speed switching
OFF speed increased by 35% for minimum switching loss and heat generation.

<50V/3A Product Comparison>

Faster OFF speed than conventional products

800ns 800ns 1200ns 1200ns

35% faster OFF speed

Lineup
Part No. 2SAR512P 2SAR552P 2SAR542P 2SAR553P 2SAR533P 2SAR514P 2SAR554P 2SAR544P 2SCR512P 2SCR552P 2SCR542P 2SCR553P 2SCR533P 2SCR514P 2SCR554P 2SCR544P

Polarity

VCEO (V) 30

IC (A) 2 3 5 2 3 0.7 1.5 2.5 2 3 5 2 3 0.7 1.5 2.5

hFE

200 to 500

PNP

50

180 to 450

80

120 to 390

30

200 to 500

NPN

50

180 to 450

80

120 to 390

09

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Muting Transistors
High hFEHigh VEBO
Summary Features Applications

High hFE and VEBO make this series ideal for audio muting circuits.

High hFE High VEBO

Home audio Car audio Muting circuit for audio applications

Excellent muting characteristics

ROHM's 40V-class products utilize a high h F E and high V E B O (12V/25V) and feature superior muting characteristics. A variety of package types are available, from the compact surface mount UMT3 to the through-hole SPT, ensuring compatibility with virtually any application.
RON()

<Ron Comparison>
100 10000 Reverse DC Current Gain : RhFE
VCE=3.0V

10

DTC343T DTC643T DTC943T

50% lower Ron

1.2 1.2 0.6

1000

DTC943TUB B

100

2SD2704K K

0.1 0.1

10 1 Vin(V) 10 100 1 10 100 Collector Current : IC (mA) 1000

Lineup

Single Type with Built-in Resistor

Part No. DTC623T DTC923T DTC643T DTC943T DTC614T R1(k) 2.2 R1 4.7 10 : Packaging designation symbol Equivalent circuit diagram UMT3F UB Package UMT3 SMT3 U K SPT S VEBO(V) 12 40 12 40 12 VCEO(V) 20 20 20 20 20 Ic(mA) 600 400 600 400 600 Ron() 0.4 0.6 0.55 0.6 0.9

: Under development

Dual Type with Built-in Resistor

Part No. UMH33 UMH32 US6H23 IMH23 IMH21
: Under development

R1(k) 2.2

Equivalent circuit diagram

R1

Package Equivalent element transistors SMT6 TUMT6 UMT6 DTC923T DTC943T DTC643T DTC614T

VEBO(V) 40 40 12 12 12

VCEO(V) 20 20 20 20 20

IC(mA) 400 400 600 600 600

Ron() 0.6 0.6 0.55 0.55 0.9

4.7
R1

10

Single Type
Package EMT3 2SD2654 UMT3 2SD2351 SMT3 2SD2704K 2SD2226K 2SD2114K SPT 2SD2705S 2SD2227S 2SD2144S VEBO(V) 25 12 12 VCEO(V) 20 50 20 IC(mA) 300 150 500 hFE 820 to 2700 820 to 2700 560 to 2700 Ron() 0.7 0.9 0.8

Dual Type
Package EMT6 EMX26 SMT6 IMX25 IMX9 Equivalent circuit diagram Equivalent element transistors 2SD2704K 2SD2654 2SD2114K VEBO(V) 25 12 12 VCEO(V) 20 50 20 IC(mA) 300 150 500 hFE 820 2700 820 2700 560 2700 Ron() 0.7 0.9 0.8

Bipolar Transistors / Digital Transistors

10

Discrete Semiconductors

Bipolar Transistors

Surface Mount Type

Package
VMN3
1

VMT3
1

EMT3F
1

EMT3
1

Polarity Application

Pc0.15W

Pc0.15W

Pc0.15W

Pc0.15W

VCEO IC V A

hFE2

PNP
2SA2199

NPN
2SC6144

PNP
2SA2029 2SA2030

NPN
2SC5658 2SC5663 2SD2696 2SD2707 2SC5659 2SC5661 2SC5662

PNP

NPN

PNP
2SA1774 2SA2018

NPN
2SC4617 2SC5585 2SD2654 2SC4618 2SC4725 2SC4726 50 50 120 12 15 15 12 12 300 30 30 32 32 50 80 60 0.1 0.15 0.05 0.5 0.5 1 1.5 2 0.4 1 1.5 0.5 0.8 0.5 0.5 0.5 120 to 390 120 to 390 180 to 560 270 to 680 120 to 560 120 to 270 180 to 390 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 120 to 390 120 to 390 120 to 390 120 to 390 120 to 270 120 to 390 820 to 2700 820 to 2700 820 to 2700 56 to 120 82 to 180 (fT300MHz) 180 to 560 (fT800MHz) 82 to 180 (fT1500MHz) 56 to 180 (fT3200MHz) 5k or more 5k or more

General Purpose Amplification

2SA1774EB 2SC4617EB

Low VCE sat

Driver High-speed Switching High hFE and Muting High Breakdown Voltage High Frequency Darlington3

25 0.3 VEBO

20 50 300 25 6 20 11 32

0.5 0.15 0.1 0.05 0.05 0.05 0.05 0.3

32 VCES 0.3

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements

11

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Surface Mount Type

Package
UMT3F
1

UMT3
1

SMT3
1

Polarity Application

Pc0. 2W

Pc0. 2W

Pc0. 2W

VCEO V

IC A

hFE2

PNP

NPN
2SC4081UB

PNP
2SA1576A 2SA1579 2SB1689 2SB1694 2SA1577 2SA2088

NPN
2SC4081 2SC4102 2SD2652 2SD2656 2SC4097 2SD1949 2SC5876 2SD2351 2SC4098 2SC4774 2SC4082 2SC4083

PNP
2SA1037AK 2SA1514K 2SA2119K 2SB1590K 2SB1690K 2SB1695K 2SA1036K 2SB1197K 2SB1198K 2SB852K

NPN
2SC2412K 2SC3906K 2SD1757K 2SD2444K 2SD2653K 2SD2657K 2SC2411K 2SD1781K 2SD1484K 2SD1782K 2SD2704K 2SD2114K 2SD2226K 2SC4061K 2SC2413K 2SC4713K 2SC3837K 2SC3838K 2SD2142K 2SD1383K 50 50 120 12 15 15 12 12 30 30 30 32 32 50 80 60
25 VEBO

0.1 0.15 0.05 0.5 0.5 1 1.5 2 0.4 1 0.5 0.5 0.8 0.5 0.5 0.5 0.3 0.5 0.15 0.1 0.05 0.05 0.05 0.05 0.3 0.3

120 to 390 120 to 390 180 to 560 270 to 680 120 to 560
120 to 270/ 180 to 390

General Purpose Amplification

2SA1576UB

Low VCE sat

270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 120 to 390 120 to 390 120 to 390 120 to 390
120 to 270/ 120 to 390

Driver High-speed Switching High hFE and Muting High Breakdown Voltage High Frequency Darlington3

820 to 2700 820 to 2700 820 to 2700 56 to 120 82 to 180 (fT300MHz) 180 to 560 (fT800MHz) 82 to 180 (fT1500MHz) 56 to 180 (fT3200MHz) 5k or more 5k or more

20 50 300 25 6 20 11 30
32 VCES

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements

Bipolar Transistors / Digital Transistors

12

Discrete Semiconductors

Surface Mount Type

Package

TUMT3

TUMT6

TSMT3

TSMT6 VCEO V IC A hFE2

Polarity Application

Pc=0.4W PNP NPN PNP

Pc=0.4W NPN PNP

Pc=0.5W NPN

Pc=0.5W PNP NPN

Low VCE sat

Driver High-speed Switching

2SB1732 2SB1730 2SB1733 2SB1731

2SD2702 2SD2700 2SD2703 2SD2701 MPT3

US6T6 US6T4 US6T7 US6T5

US6X5 US6X3 US6X6 US6X4 CPT3

2SB1709 2SB1690 2SB1705 2SB1707 2SB1710 2SB1695 2SB1706 2SB1708 2SAR543R 2SAR544R 2SA2090 2SA2092 2SA2094

2SD2674 2SD2653 2SD2670 2SD2672 2SD2675 2SD2657 2SD2671 2SD2673 2SCR543R 2SCR544R 2SC5868 2SC5865 2SC5866

QST6 QST4 QST2 QST7 QST5 QST3

QSX5 QSX3 QSX1 QSX6 QSX4 QSX2

12 12 12 12 12 30 30 30 30 30 50 80 60 60 60

1.5 2 3 4 6 1 1.5 2 3 5 3.5 2.5 0.5 1 2

270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 180 to 450 120 to 390
120 120 120 120 120 120 to to to to to to 270/ 390 270/ 390 270/ 390

Package

Polarity Application

Pc=0.5W PNP 2SB1697 2SB1713 2SB1424 2SB1698 2SB1714 2SAR512P 2SAR552P 2SAR542P 2SB1132 2SB1188 2SAR513P 2SAR553P 2SAR533P 2SB1561 2SAR514P 2SB1260 2SAR554P 2SAR544P 2SA2071 2SB1427 NPN 2SD2661 2SD2678 2SD2150 2SD2662 2SD2679 2SCR512P 2SCR552P 2SCR542P 2SD1664 2SD1766 2SCR513P 2SCR553P 2SCR533P 2SD2391 2SCR514P 2SD1898 2SCR554P 2SCR544P 2SC5824 2SD2537 2SD2153 2SD1834

Pc=1W PNP 2SB1412 2SA1834 2SB1182 2SB1184 2SA1952 2SB1181 2SB1275 2SA2072 2SB1316 NPN 2SD2118 2SC5001 2SD1758 2SD1760 2SC5103 2SD1733 2SD1918 2SC5825 2SD2318 2SD2143 2SD1980

VCEO V

IC A

hFE2

Low sat VCE

Driver

High-speed Switching

High hFE

12 12 20 20 20 30 30 30 30 30 32 32 50 50 50 50 60 60 80 80 80 80 160 60 25 20 25 60
60 VCES

Darlington

6010 100

2 3 3 5 10 1.5 2 2 3 5 1 2 1 2 3 3 2 5 0.7 1 1.5 2.5 1.5 3 1.2 2 2 3 1 2 2

270 to 680 270 to 680

120 to 390/ 180 to 560

120 to 390
180 to 560/ 120 to 390

270 to 680 270 to 680 200 to 500 200 to 500 200 to 500 120 to 390 120 to 390 180 to 450 180 to 450 180 to 450 120 to 390 120 to 270 120 to 270 120 to 390 120 to 390 120 to 390 120 to 390
82 to 180/ 120 to 270 120 to 270/ 120 to 390

820 to 1800 390 to 820 820 to 1800 560 to 1800 2k or more 1k to 10k 1k to 10k

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements Under development

13

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Leaded Type
Package

SPT

ATV

VCEO V
Polarity Application

IC A

hFE3

PNP

Pc=0.3W NPN

PNP 2SB1237 2SB1240 2SB1443 2SB1243 2SB1238 2SB1241 2SB1236 2SB1236A 2SA2093 2SA2073

Pc=1W NPN 2SD1858 2SD1862 2SD1864 2SD1859 2SD1863 2SD1857 2SD1857A 2SC5880 2SC5826 2SC4015 2SD1866 2SC5060 2SD1867

General Purpose Amplification

2SA1038S

2SC2389S 2SD1468S 2SD2687S

5 5 5

120 15 12 20 32 32 32 50 50 50 80 80 120 160 60 60 25 VEBO 20 50 300 25 6010 9010 100

0.05 1 5 2 0.5 1 2 0.5 3 3 0.7 1 1.5 / 2 1.5 2 3 0.3 0.5 0.15 0.1 0.05 2 1 2

180 to 560 120 to 390 350 to 680 120 to 390 120 to 390 120 to 390 120 to 390 120 to 390 120 to 270 120 to 390 120 to 390 120 to 390 120 to 390 100 to 200
120 to 270/ 120 to 390 120 to 270/ 120 to 390

Low sat VCE

2SA1585S 2SA854S 2SA1515S

5

2SC4115S 2SC1741S

2SC1741AS 2SD1768S 2SD2705S 2SD2144S 2SD2227S 2SC3415S 2SC2058S

Driver

High-speed Switching

High hFE and Muting

High Breakdown Voltage High Frequency

820 to 2700 820 to 2700 820 to 2700 56 to 120 82 to 180 (fT300MHz) 1k to 10k 1k to 2.5k 1k to 10k

Darlington

1 : When mounted on a recommended land pattern 2 : When mounted on a 1.7mm board with copper foil no greater than cm 2 in area 3 : For hFE, please refer to the specifications 4 : For the internal circuit, please refer to the specifications 5 : Pc=0.4W supplied Note : (-) symbol omitted for PNP elements

Bipolar Transistors / Digital Transistors

14

Discrete Semiconductors

Complex Bipolar Transistors

Surface Mount Type

Package
VMT6 EMT5 / EMT6 UMT5 / UMT6 SMT5 / SMT6 TUMT5 / TUMT6 TSMT5 / TSMT6 MPT6 Equivalent transistors VCEO V IC mA hFE

Configuration Item Equivalent circuit diagram Application (TOP View

VT6T1 VT6T2 VT6T11 VT6T12 VT6X1 VT6X2 VT6X11 VT6X12
Preamp

Part No. EMT1 EMT18 EMT2 EMT3 EMX1 EMX26 EMX18 EMX28 EMX2 EMX3 EMX4 EMX5 EMY1 EMZ1 EMZ7 EMZ2 EMZ8 UMT1N UMT18N UMT2N UMX1N UMX18N UMX2N UMX3N UMX21N UMX4N UMX5N UMY1N UMZ1 UMZ2N IMT1A IMT17 IMT18 IMT2A IMT3A IMT4 IMX1 IMX9 IMX25 IMX17 IMX2 IMX3 IMX8 IMX4 IMX5 FMY1A FMY4A IMZ1A IMZ4 IMZ2A US6T8 US6T9 US6X7 US6X8 QST8 QST9 QSX7 QSX8 QSZ1 QSZ2 QSZ3 QSZ4 MP6T1 MP6T2 MP6T3 MP6X1 MP6X2 MP6X3 MP6Z1 MP6Z2 MP6Z3 2SA1037AK2 2SA1036K2 2SA20182 2SB11322 2SB11882 2SA20712 2SA21992 2SA1037AK2 50 50 12 32 32 60 20 50 50 150 500 500 1 A 2 A 3 A 200 100 150 120 or more 120 to 390 270 to 680 120 to 390 120 to 390 120 to 270 120 to 560 120 to 560 120 to 560

Preamp PNP2

Driver Ideal for Current Mirrors

Preamp

NPN2 Ideal for Current Mirrors

2SA1037AK2 50 150 120 to 560 50 2SA1514K2 120 180 or more 2SB17092 12 1.5 A270 to 680 2SB17102 30 1 A 270 to 680 20 200 120 to 560 2SA21992 50 200 120 to 560 150 120 or more 2SC2412K2 50 150 820 to 2700 2SD26542 50 500 270 to 680 2SC55852 12 500 560 to 2700 2SD2114K2 20 300 820 to 2700 2SD2704K2 20 400 270 to 680 2SD26962 30 500 120 to 390 2SD1484K2 50 1 A 120 to 390 2SD16642 32 2 A 120 to 390 2SD17662 32 3 A 120 to 390 2SC58242 60 200 20 120 to 560 100 2SC61142 50 120 to 560 200 20 120 to 560 100 2SC61142 50 120 to 560 2SC2412K2 2SC2412K2 2SC3906K2 2SC4713K2 2SC3837K2 2SC3838K2 2SD26742 2SD26752 2SA1037AK 2SC2412K 2SA1037AK 2SC2412K
2SA1037AK 2SC2412K 2SA2018 2SC5585 2SA1036K 2SC2411K 2SB1132 2SD1664 2SB1188 2SD1766 2SA2071 2SC5824

50 50 120 6 20 11 12 30 50 50 50 50
50 50 12 12 32 32 32 32 32 32 60 60

150

120 to 560

High Frequency

Driver Amplifier Inverter Driver

150 120 to 560 50 180 or more 50 180 to 560 50 56 to 180 50 56 to 120 1.5 A 270 to 680 1 A 270 to 680 150 150 150 150
150 150 500 500 500 500

120 or more 120 to 560 120 or more 270 to 680 180 to 390 to 390 to 390 to 270

PNP NPN Preamp

VT6Z1 VT6Z2
DC/DC Converter

1 A 1 A 120 2 A 120 2 A 3 A 3 A 120

2SA1037AK 2SC2412K 2SA2018 2SC2412K

2SB1690 2SD2653 2SB1695 2SD2657 2SB1705 2SD2670 2SB1706 2SD2671

50 50 12 50
20 20 50 50 12 12 30 30 12 12 30 30

150 150 500 150

200 200 100 100

120 to 560 270 to 680 120 to 560 120 to 560 120 to 560

2 A 270 to 680 2 A 1.5 A 1.5 A 270680 3 A 3 A 270 to 680 2 A 2 A 270 to 680

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

15

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Surface Mount Type

Package
EMT5 / EMT6 UMT5 / UMT6 SMT5 / SMT6 TUMT5 / TUMT6 TSMT5 / TSMT6
Equivalent transistors

Configuration
Item Equivalent circuit diagram Application (TOP View
EMF5 UMF5N

VCEO V ImA C

hFE

Part No.

2SA2018 DTC144E 2SA1774 DTC124X 2SA2018 2SK3019 DTA143T 2SK3019 DTB513Z 2SK3019 2SC5585 DTC144E 2SC5585 2SK3019 2SA1774 DAN202K 2SA2018 RB521S-30 2SB1689 RB461F 2SB1710 RB461F DTA144E RB520G-30 2SC4617 DAN202K 2SC5585 RB521S-30 2SD2652 RB461F 2SD2675 RB461F DTC123J RB521S-30 2SC2412K VDZ6.8B

12 50 50 50 12 30 50 30 12 30 12 50 12 30 50 80 12 30 12 20 30 20 50 30 50 80 12 30 12 20 30 20 50 30 50 Vz=6.8

500 100 150 100 500 100 100 100 500 100 500 100 500 100 150 100 500 200

270 to 680 68 or more 180 to 390 68 or more 270 to 680 100 to 600 140 or more 270 to 680 60 or more 270 to 680 120 or more 270 to 680

PNPDTR
UMF28N

PNP N-ch MOS

EMF6

UMF6N

Power Management
PNP-DTR N-ch MOS

EMF32

UMF32N

EMF33

NPNDTR NPN N-ch MOS

EMF8

UMF8N

EMF9

UMF9N

UML1N

UML4N

PNPDi
FML9 US5L9 QSL9

1.5 A270 to 680 700 1 A 270 to 680 700 100 100 68 or more

QSL11

PNP-DTR Di

EML17

DC/DC Converter
UML2N

150 120 or more 100 500 200 270 to 680

UML6N

NPNDi
FML10 US5L10 QSL10

1.5 A 270 to 680 700 1 A 270 to 680 700 100 100 150 Iz=5 80 or more 120 to 270

US5L12

QSL12

NPN-DTR Di NPNDi Shunt Regulator

EML20

EML22

UML23N

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

Bipolar Transistors / Digital Transistors

16

Discrete Semiconductors

Digital Transistors

Surface Mount Type

Item
PNP

Part No.
NPN

Package

VMN3
Specifications
R1 R1

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

MPT3
Vcc Io GI VCEOIc hFE V mA

R1 R2 k k

R2

R2

Type
DTA123EA DTC123EA DTC143EA DTC114EA DTC124EA DTC144EA DTC115EA DTD743E DTD543E DTD113E DTD123E DTD143E DTD114E DTC113ZA DTC123YA DTC123JA DTC143XA DTC143ZA DTC114WA DTC114YA DTC124XA DTC144VA DTC144WA DTD713Z DTD723Y DTD743X DTD743Z DTD513Z DTD523Y DTD543X DTD543Z DTD113Z DTD123Y DTDG23YP1 DTC123TKA DTC143TA DTC114TA DTC124TA DTC144TA DTC115TA DTC125TA DTD123T DTD143TK DTC614T DTC623T DTC643T DTC114GA DTC124GA DTC144GA DTC115GA DTD114GK DTDG14GP1 2.2 4.7 10 22 47 4.7 4.7 1 2.2 4.7 10 1 2.2 2.2 4.7 4.7 10 10 22 47 47 1 2.2 4.7 4.7 1 2.2 4.7 4.7 1 2.2 2.2 1 2.2 4.7 10 22 47 100 200 2.2 4.7 10 10 2.2 4.7 2.2 4.7 10 22 47 4.7 4.7 1 2.2 4.7 10 10 10 47 10 47 4.7 47 47 10 22 10 10 10 47 10 10 10 47 10 10 10 10 22 47 100 10 10 B DTA143EA 100mA DTA114EA DTA124EA DTA144EA DTA115EA 200mA DTB743E DTB543E DTB113E 500mA DTB123E DTB143E DTB114E DTA113ZA DTA123YA DTA123JA DTA143XA DTA143ZA 100mA DTA114WA DTA114YA DTA124XA DTA144VA DTA144WA DTB713Z 200mA DTB723Y DTB743X DTB743Z DTB513Z DTB523Y 500mA DTB543X DTB543Z DTB113Z DTB123Y 1A DTA113TKA

Pd150mW
M EB DTA only DTC only E UB

Pd200mW
DTC only DTD only DTB only DTC only U K

Pd500mW
P 50 50 50 50 50 50 30 12 50 50 50 50 50 50 50 50 50 50 50 50 50 50 30 30 30 30 12 12 12 12 50 50 6010 50 50 50 50 50 50 50 50 40 40 40 20 20 20 50 50 50 50 6010 100 100 50 30 30 20 20 or more 20 or more 30 or more 56 or more 68 or more 82 or more

R1R2 Potential Divider Type

100 100

200 120 or more 500 120 or more 500 500 500 500 100 100 100 100 100 100 70 50 100 30 33 or more 39 or more 47 or more 56 or more 33 or more 33 or more 80 or more 30 or more 80 or more 24 or more 68 or more 68 or more 33 or more 56 or more

R1R2 Leak Absorption Type

200 140 or more 200 140 or more 200 140 or more 200 150 or more 500 140 or more 500 140 or more 500 140 or more 500 150 or more 500 500 100 100 100 100 100 100 100 100 500 500 500 600 600 600 100 100 100 100 500 56 or more 56 or more 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 820 to 2700 820 to 2700 820 to 2700 30 or more 68 or more 68 or more 68 or more 56 or more

1(A) 300 or more

Type using R1 alone as input Resistor

DTA143TA 100mA DTA114TA DTA124TA DTA144TA DTA115TA DTA125TA DTB123TK 500mA DTB143TK DTB114TK For Muting DTA114GA 100mA DTA124GA DTA144GA DTA115GA 500mA 1A DTB114GK

Type using R2 alone as Bleeder Resistor

1(A) 300 or more

: Package designations symbol

1 : For the internal circuit, please refer to the specifications Notes : Part numbers for VMN3, VMT3, EMT3F EMT3, and UMT3F do not have the suffix 'A' (-) symbol omitted for PNP elements

17

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Complex Digital Transistors

Surface Mount Type

Package
EMT5 / 6
UMT5 / 6 SMT5 / 6 TUMT5 / 6 TSMT6 MPT6

Configuration Application Item Equivalent circuit diagram (TOP View)

UMA1N UMA2N UMA9N UMA5N UMA3N UMA4N UMB2N UMB11N UMB10N UMB6N FMA1A FMA2A FMA9A FMA5A FMA3A FMA4A IMB2A IMB11A IMB10A EMA2

Equivalent transistors Part No.

DTA144E2 DTA114E2 DTA123J2 DTA143T2 DTA114T2 DTA114E2 DTA123J2 DTA144E2 DTA124E2

Potential Divider Type Leak Absorption Type Input Resistor Type

EMA5 EMA3 EMA4

PNP2

Potential Divider Type Potential Divider Type Potential Divider Type

EMB2 EMB11 EMB10 EMB6

DTA144E2

Input Resistor Type

EMB3 EMG1

UMB3N UMG1N UMG2N UMG9N UMG3N UMG4N UMG6N UMH1N UMH2N UMH11N UMH9N UMH5N UMH6N
UMH3N UMH4N

IMB3A FMG1A FMG2A FMG9A FMG3A FMG4A FMG6A IMH1A IMH2A IMH11A IMH9A IMH 5A IMH6A
IMH3A IMH4A IMH15A IMH21 IMH23 IMH8A IMH14A

US6H23

DTA143T2 DTC124E2 DTC144E2 DTC114E2 DTC143T2 DTC114T2 DTC144T2

Potential Divider Type

EMG2 EMG9 EMG3

Input Resistor Type

EMG4 EMG6 EMH1

Potential Divider Type Leak Absorption Type Potential Divider Type

EMH2 EMH11 EMH9

DTC144E2 DTC114E2 DTC114Y2 DTC124E2 DTC144E2 DTC143T2 DTC114T2 DTC144T2 DTC614T2 DTC643T2 DTC114T2 DTC144T2 DTDG14GP2 500mA

DTC124E2

NPN2

EMH6 EMH3 EMH4 EMH15

UMH8N UMH14N

Input Resistor Type

QSH29

Driver
MP6H1
DTDG14GP2 DTA124E DTC124E DTA114E DTC114E DTA114Y DTC144E DTA144E DTC144E DTA143X DTC144E DTA114Y DTC114Y DTA143Z DTC143Z DTA113Z DTC114Y DTA143T DTC143T DTB513Z DTC114E DTB713Z DTC114E

EMD2 EMD3

UMD2N UMD3N UMD4N UMD12N UMD5N UMD9N UMD22N

IMD2A IMD3A IMD9A

Potential Divider Type

EMD4 EMD12 EMD5 EMD9

Leak Absorption Type

EMD22

PNPNPN

EMD38

Input Resistor Type

EMD6

UMD6N

IMD6A

EMD29 EMD30

IMD10A IMD16A

Power Management

DTC114T

DTC115T

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6.

Bipolar Transistors / Digital Transistors

18

Discrete Semiconductors

Dimensions
0.14

1.2
6 5 4

0.5

1.2 0.92
1

0.14

0.16 0.13

0.4 0.4 0.8 0.1

Notes : 1) Characters in ( ) under package designation signify the JEITA No. while characters in < > denote the JEDEC No. 2) For more detailed of dimensions, please refer to the technical specifications.

19

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Part No. Explanation

Bipolar Transistor Part No. Explanation

Part No. Taping Code

Digital Transistor Part No. Explanation

B VMN3

2 S C 2

2 K

6 R

Example :
DT Digital Transistor

M VMT3 EB EMT3F E EMT3

hFE Ranking code

Code A B C D E M N P Q R S E U V W hFE Range 16 to 32 25 to 50 60 to 120 100 to 200 160 to 320 39 to 82 56 to 120 82 to 180 120 to 270 180 to 390 270 to 560 390 to 820 560 to 1200 820 to 1800 1200 to 2700
Polarity
A

1 General use 3 Muting 5 Low VCE sat 12V 7 Low VCE sat 30V 3 4 5 103 104 105

UB UMT3F U UMT3 K SMT3 P MPT3

Exponent Specification Exponent of R1 Resistance Value

Package

Taping Code

D T A 1

E K A T

PNP B C NPN D

Basic R1 Resistance Value Resistance Ratio R1 / R Suffix except VMN3, VMT3, 1 1.0 E R 1 / R2 = 1 / 1 EMT3F, EMT3,UMT3F
2 4 6 2.2 4.7 6.8 X R1 / R2 = 1 / 2 Y R1 / R2 = 1 / 5 Z R1 / R2 = 1 / 10 J R1 / R2 = 1 / 20

W R 1 / R2 = 2 / 1 V R 1 / R2 = 5 / 1 T R1 only G R2 only

Note : and together represent the R1 resistance value

Example

Packing type
Code Packaging style T2L T2L T2R TL TL T2R T2R TL T106 TR TR TN T2R TL TR TR T116 T146 T148 T108 T110 TL TL TR TR TR TB T100 TR TL TL TL TP TV2 Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Embossed tape Radial tape Radial tape Bulk Bulk Bulk Direction One terminal on sprocket hole side One terminal on sprocket hole side Terminal No.1 on sprocket hole side One terminal on sprocket hole side One terminal on sprocket hole side Three terminals on sprocket hole side Terminal No.1 on sprocket hole side One terminal on sprocket hole side One terminal on sprocket hole side Three terminals on sprocket hole side Terminal No.1 on sprocket hole side Non-directional Terminal No.1 on sprocket hole side One terminal on sprocket hole side Terminal No.1 on sprocket hole side Terminal No.1 on sprocket hole side One terminal on sprocket hole side One terminal on sprocket hole side Three terminals on sprocket hole side Terminal No.1 on opposite side from sprocket hole side Non-directional One terminal on sprocket hole side One terminal on sprocket hole side Terminal No.1 on sprocket hole side Terminal No.1 on sprocket hole side Terminal No.1 on sprocket hole side Terminal No.1 on sprocket hole side Three terminals on sprocket hole side Terminal No.1 on sprocket hole side Fin on sprocket hole side One terminal on sprocket hole side Fin on sproket hole side Ammo Box Ammo Box Box Box Tube Basic ordering unit (pcs) 8,000 8,000 8,000 3,000 3,000 8,000 8,000 3,000 3,000 3,000 3,000 3,000 8,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 2,500 1,000 1,000 2,500 2,500 1,000 5,000 2,500 500 50 0 360

24 43

2.2 4.7

104 103

22k 4.7k

Package VMN3 VMT3 VMT6 EMT3F EMT3 EMT5 EMT6 UMT3F UMT3 UMT5 UMT6 WEMT6 TUMT3 TUMT5 TUMT6 SST3 SMT3 SMT5 SMT6 TSST8 TSMT3 TSMT5 TSMT6 TSMT8 SOP8 MPT3 MPT6 CPT3 TCPT3 LPT SPT ATV TO-220FN TO-220FM TO-3PF

Bipolar Transistors / Digital Transistors

20

Discrete Semiconductors

MEMO

21

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

MEMO

Bipolar Transistors / Digital Transistors

22

2010

Bipolar Transistors / Digital Transistors

The content specified in this document is correct as of 1st October, 2009. No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

R0039A

Catalog No.52P6215E 12.2009 ROHM