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DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
TO-39
T stg Tj
C C
September 2002
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2N1711
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5
o o
C/W C/W
V (BR)CER Collector-Emitter Breakdown Voltage (R BE 10) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = 10 mA
50
I E = 100 A
V CE(sat) V BE(sat) h FE
I B = 15 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V f = 1 KHz 20 35 75 100 40 35 70 70
0.5 0.95 60 80 130 130 75 65 135 100 50 18 3.5 4.4 7.3 x 10 -4 23.8
1.5 1.3
V V
300
h fe fT C EBO C CBO NF h ie h re h oe
Small Signal Current Gain Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance
300 MHz 80 25 8 pF pF dB K
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2N1711
G I H
B
P008B
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2N1711
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