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In Words
M. Tech. (Microelectronics)/A
1. In a MOS Structure, capacitance in depletion region is : (A) (C) 2. (A) (C) 3. (A) (B) (C) (D) 4. (A) (C) 5. (A) (B) (C) (D) 6. More than that in inversion region More than that in accumulation region + for NMOS and for PMOS Same for NMOS and PMOS (B) Same as in inversion region (D) Lesser than that in inversion region (B) for NMOS and + for PMOS
GCA refers to : Fast variation of electrical field in MOS Channel Slow variation of electrical field in MOS Channel Process in short channel MOSFETs Short Channel Effect HfO2 Ta2O5 Holes are lighter than electrons Holes are heavier than electrons Holes are positively charged and electrons are negatively charged None of the above (B) Al2O3
Doping density in n-type semiconductor is 1016 cm3. The best option for this semiconductor is : (A) (C) Holes are equal to 1016 cm3 Electrons are approximately 104 cm3 Saturation region Same everwhere Reduces subthreshold leakage Has no effect on subthreshold leakage MOSFET Model Short Channel Effect (B) Holes are approximately 104 cm3 (D) Holes and electrons are equal (B) Linear region
7.
Maximum drain current in a MOSFET is in : (A) (C) (D) Cutoff region (B) Increases subthreshold leakage
8.
DIBL in a MOSFET : (A) (C) (D) Reduces power dissipation (B) BJT Model
9.
M. Tech. (Microelectronics)/OEC-22972
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10. Switching speed of a MOSFET is : (A) (B) (C) (D) (A) (C) Ratio of transconductance and gate input capacitance Ratio of output resistance and drain voltage Ratio of gate voltage with drain voltage Ratio of drain voltage with threshold voltage Very close to conduction band In mid of bandgap (B) Close to valence band
11. Heavily doped n-type semiconductor has fermi level : (D) Between intrinsic fermi level and the valence band (B) 25V
12. Thermal voltage at room temperature is : (A) (C) (A) (C) 25 mV 0V Depletion Charge Density Threshold Voltage (D) 1000V (B) Inversion Charge Density
13. In a MOSFET, Weak, Moderate and Strong are the terms associated with : (D) MOSFET Dimensions
14. As per the Quantum Mechanical Theory, the inversion charge density peaks in the MOSFET : (A) (C) (A) (C) At the substrate/oxide interface Oxide region Oxide thickness Gate to source voltage (B) Some distance away from the substrate/ oxide interface in the substrate (D) Polygate region (B) Oxide/substrate barrier height
16. Drain saturation voltage primarily depends on : (A) (B) (C) (D) Drain voltage Drain current Difference between gate to source voltage and threshold voltage None of the above
17. Strained silicon technology works on the principle of : (A) Stretching of the crystal lattice (B) Conversion from crystalline to amorphous (C) Exposing the lattice with light (D) Radiation hardening
M. Tech. (Microelectronics)/OEC-22972
18. Uniaxial strain results from : (A) (B) (C) (D) (A) (B) (C) (D) (A) (B) (C) (D) (A) (C) (A) (C) Application of External Stress through nitride cap layers over the poly gate Deposition of strained silicon layers by doping germanium in the substrate Applying drain voltage Applying gate voltage Low frequency capacitance is higher than high frequency capacitance Low frequency capacitance is lower than high frequency capacitance MOS Capacitance is frequency independent None of the above Raises threshold voltage Reduces threshold voltage Has no relation with threshold voltage Both reduces and increases the threshold voltage Data is lost during read cycle only (B) Data is lost during write cycle only
21. A DRAM Cell requires refresh cycle because : Data is lost during both read and write cycle(D) Of some variation in supply voltage MOSFET parameters BJT parameters (B) MOSFET models
22. SP, MM9 XSIM are : (D) Steps of MOSFET fabrication processes Coloumb scattering
23. Mobility in the MOSFET decreases due to : (A) Phonon scattering (B) (C) (A) Surface roughness scattering
(D) All of the above Surface mobility is more than bulk mobility (D) None of the above Lithography techniques
24. In a MOSFET, surface mobility and bulk mobility differ as : Surface mobility is lesser than bulk mobility (B)
(C) Surface mobility is same as bulk mobility 25. MBE and CVD are : (A) (C) (A) (C) Epitaxy techniques Design tools Oxidation Both etching and oxidation
(B)
26. Wet and dry are associated with the following IC processes : (D) Lithography
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M. Tech. (Microelectronics)/OEC-22972
27. MOEMS is : (A) (C) Micro-opto-electromechanical systems Micro-ortho-electromechanical systems (B) Mini-ortho-electromechanical systems (D) Medical-opto-electromechanical systems (B) e beam
28. Which of the following is not a lithographic source ? (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) UV Ion beam Etchant Polygate material Oxidation process Epitaxy process Increasing width Increasing gate to source voltage Flicker Johnson Silicon substrates Metals A SPICE model A testing equipment Lower than 109 torr Between 103 torr to 105 torr Ficks law Hooks law Numerical Analytical (D) RBS (B) Organic resist (D) Dielectric (B) Crystal growth process
29. HF is a :
31. Drain current can be increased by : (D) All of the above (B) White
32. Which of the following noise is dominant in semiconductor devices at lower frequencies ? (D) None of the above (B) Developer solutions
33. Negative and positive are classes of which materials ? (D) Resist (B) A packaging material
34. Latch up is : (D) Mainly caused due to ionizing radiation (B) Between 105 torr to 107 torr (D) Between 101 torr to 103 torr (B) Ohms law
36. Diffusion obeys : (D) Maxwell law (B) Empirical (D) All of the above
M. Tech. (Microelectronics)/OEC-22972
38. An FRAM storage capacitor contain main component as : (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) Fe SiO2 AFM measurements TEM measurements Increases at lower and higher frequencies Same at all frequencies Interface trapped charge Fixed oxide charge Electron beam imaging Ion imaging Wire bonding Flipchip (B) PZT (D) Si (B) SEM measurements
39. Spreading resistances occur in : (D) Four probe measurements (B) Decreases at lower and higher frequencies
41. Which one of the following is an oxide charge ? (D) All of the above (B) X-ray imaging
43. Which of the following is not a die attachment technique ? (D) SIMS
44. A package is used to : Protect the die from moisture, chemicals and heat As a transmission medium for power lines As a transmission medium for signal lines All of the above Two NMOS transistors One NMOS and one PMOS transistor Supply voltage Output load capacitance Lesser than input voltage More than input voltage (B) Three PMOS transistors
45. A CMOS inverter has : (D) Two PMOS transistors (B) Input clock frequency (D) All of the above (B) Same as input voltage
47. An NMOS pass transistor produces output voltage when logic 1 is at input : (D) None of the above
M. Tech. (Microelectronics)/OEC-22972
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48. 2 input CMOS NAND gate has : (A) (C) (A) (C) (A) (B) (C) (D) (A) (C) (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) 2 NMOS and 2 PMOS 4 NMOS Field programmable gate arrays Flat programmed gate arrays (B) 1 NMOS and 1 PMOS (D) 4 PMOS (B) Future programmed gate arrays
50. Biaxial strain in a MOSFET is caused due to : Applying external stress through nitride cap layer Depositing strained silicon layer by doping germanium in silicon By applying gate voltage None of the above Presence of mobile atom in the crystal cell (B) Presence of static atom in the crystal cell Stretching of nucleus and the electron Carrier scattering in the substrate Breakdown of gate oxides Boron penetration from the poly to the oxide and the substrate Straining the lattice MINIMOS CADDET Thermal voltage Intrinsic carrier concentration Reduces if poly gate depletion is high Reduces if poly gate doping is high (B) GEMINI (D) Ionizing of atoms
53. Which of the following is not a device simulator ? (D) PROMIS (B) Substrate concentration
54. Bulk potential in a MOSFET substrate is a function of : (D) All of the above (B) Raises if poly gate depletion is high
56. Which of the following is true for current sense amplifiers (CSA) and voltage sense amplifier (VSA) ? (A) (C) (A) (C) VSA is faster than CSA VSA and CSA have same speed Work function of the polygate Work function of the substrate (B) VSA is slower than CSA (D) These are not used in memories (B) Interface trapped charge density
M. Tech. (Microelectronics)/OEC-22972
58. Which is not a low k dielectric ? (A) (C) Hydrogen Silsequixones Fluorinated silicon on glass films (B) Methyl Silsequixones (D) Aluminium oxide
59. The high energy radiation causes in a MOSFET : (A) (C) Increase of subthreshold leakage No effect on any MOS parameter (B) Increase of ON current
60. DRC and LVS are the terms associated with : (A) (C) Testing techniques Layout design (B) Front end design
61. Semiconductor thickness can be measured by : (A) (C) SEM Interference technique (B) TEM
(D) AFM
62. GTO is a : (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) Analytical instrument Short channel effect Gives results of devices under test IC design steps SPICE Model Oxidation model Silicon and Germanium Germanium Invented by Leo Esaki (B) MOSFET model (D) Power electronic device (B) IC Fabrication plots
63. Shmoo plot : (D) IC modeling plots (B) Mathematical model of a semiconductor (D) Etching model (B) Silicon
65. HBT and Strained Si MOS devices have : (D) Aluminium (B) Operates in reverse bias
66. Which of the following is false about tunnel diode ? Uses quantum mechanical tunneling principle(D) Mainly used for microwave applications Generate low power Operate at microwave frequencies (B) Generate high level of phase noise
67. The main disadvantage of IMPATT diode is : (D) Generate high power
M. Tech. (Microelectronics)/OEC-22972
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68. GaAs is used for high frequency applications because : (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) Its oxide is easy to form Electron mobility is higher as compared to silicon Electron mobility is lower as compared to silicon It is not a semiconductor Drift of carriers Drift and diffusion of carriers Zero Four times the fermi potential Analytical Instruments Layout rules Quantum mechanical tunneling Diffusion It is used to regulate voltage Use tunneling principle Active and saturation Active, cutoff, inverse and saturation Has wide bandgap Has high electron mobility (B) Diffusion of carriers
69. Subthreshold leakage current is mainly due to : (D) None of the above (B) Equal the fermi potential
70. During inversion condition in a MOSFET, the surface potential is : (D) Double the fermi potential (B) IC fabrication steps
71. XRD, SEM, TEM are : (D) None of the above (B) Drift (D) Breakdown (B) Operate in reverse bias (D) All of the above (B) Active, cutoff and saturation
74. A BJT can operate in : (D) Active and cutoff (B) Is used in LEDs
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ROUGH WORK
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