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lity subproject in
The limits of miniaturization have Pullnano : « The
not yet been reached ! feasibility of the chosen thin film technology so-
lutions and the FDSOI and FinFET architectures
In charge of Pullnano's first objective, subproject 8 has some "world’s
has been demonstrated, and the results show a
firsts" demonstrators to its credits. Highlights by Stephane Monfray
from STMicroelectronics and SP8 coordinator. further scale reduction potential down to 22nm,
and even to 16nm. »
Can we safely talk about a full success re- the alignment between levels of lithography mo-
garding the major objectives of Pullnano ? dules, as we work at the limits of what's techni-
As announced at the IEDM 2007 conference, cally possible with the available equipments.
we demonstrated, for the first time, the func- The FDSOI device was made via e-beam litho-
tionality of a 0,179 µm2 6T-SRAM bitcell, the graphy on a Vistec SB350 in Crolles (France). It
N a n o C M O S
smallest SRAM cell size ever obtained with a features a HfSiON/TiN gate stack. The FinFET
High K dielectric/metal gate architecture on a device was fabricated at IMEC with an advan-
fully depleted Silicon on Insulator (FDSOI) de- ced immersion lithography technique on a
vice. At this year's IEDM, the consortium will TwinScan 1700i (193nm) from ASML ... and with
present a similar sized 6T SRAM cell based on next generation EUV lithography for the contact
a multigate FET architecture, i.e. a FinFET, thus openings. Among the many challenges figured
demonstrating the successful patterning of also the processing of thin films with just C.Fenouillet-Beranger et al, IEDM07
very challenging structures at gate level in the 10nm thickness (or
32nm technology node. Thin films devices are less) and the epitaxially The 0,179 µm2 FDSOI
SRAM bitcell was presented
one of the most promising solutions for sub raised source and drain at IEDM 2007. A world first in
o f
45nm CMOS, thanks to their improved short regions for the FDSOI size and technology, it fea-
channel behaviour and low leakage currents. In devices, or the skills of tures a HfSiON/TiN gate
stack, a 10 nm Silicon thin
both cases, our strategy aimed at low power etching the very thin film and epitaxially raised
l i m i t s
consumption. We also achieved a BEOL de- fins – i.e. the vertical source and drain regions.
monstrator featuring an Ultra Low K dielectric 20nm membranes (see Next generation EUV-litho-
(with k = 2.3) as insulator between the metal in- the photograph on graphy has been used to
terconnexion layers (using a damascene struc- page 2) – in the FinFET etch open the contact holes
in the FinFET device at
ture with 32nm design rules) in order to obtain devices. IMEC.
the lowest possible delay. A.Veloso et al, IEDM08
t h e
2
Air-Gap using Self-Aligned-barriers is
Focus
a promising architecture for 22nm
node interconnects
On the system level power
Using in-house simulation tools, LAHC (Laboratory of Microwave estimation
and Characterization) has shown how Self-Aligned-Barriers (SAB)
improve 32 nm interconnect performance, reducing both delay Another key result related to Pullnano's objective 3 has been
and crosstalk by 10% and 7% respectively. These are improve- achieved by a ten years old independant R&D organisation es-
ments the designers are looking for. tablished in Greece. Within Pullnano, ISD ( Integrated Systems
Integrating Air-Gap using SAB is the most promising architecture Development ) has developped a novel, entry-level SoC (Sys-
for the 22 nm node. This will also be quite a challenge for the des- tem-on Chip) power estimation methodology which enables
igner with a metal pitch dependant dielectric constant. Experi- preliminary estimation of dynamic power of bit and cycle-accu-
mental characterization shows moisture uptake in low k dielectric rate transaction-level SystemC macro-models. This system-level
BD2X after integration increases its k-value by 10% generating power methodology targets power analysis and optimization
dielectric losses. Classical Cu interconnects are limited by propa- with sufficient accuracy and improved productivity with respect
gation delay of high speed (RF) signals. The IMEP laboratory in- to the traditional RTL design flow.
vestigated wireless propagation which uses electromagnetic Dynamic power estimation is based on measuring system’s swit-
waves. The synchronism of pulse fronts is assured by the trans- ching activity. It is computed by multiplying the number of bit tran-
ceivers and only jitter is to be controlled. Power consumption sitions for all input and output signals with an appropriate bit
and performance of transceivers required for wireless intercon- energy coefficient. Bit energy (or speed) coefficients adjust inter-
nects is still to be validated. nal system performance (respectively, power) metrics by consi-
Contact : Professor Anthony O'Neill, Newcastle University dering a precise technology node (e.g. 32 or 22nm) and variations
email : anthony.oneill@newcastle.ac.uk (e.g. high performance or low power). Such data can be extracted
from semiconductor technology roadmap data available from in-
ternational organizations (e.g. ITRS), simulation platforms (e.g.
Objective 4> To be a forum of European MASTAR) or test structures. A representation of this methodology
equipment suppliers is shown in Fig. 1.
3
INTERVIEW
The Pullnano project started on June 1st don't know today if multigate is going to be the the full capability of the technology, and of the
2006 for a duration of 30 months. Did you choice of the future for everybody in the indus- design community to make cost effective des-
achieve your original objectives ? try but it looks promising. If one doesn't need igns, only then the manufacturing machine will
We have established and demonstrated the the performance, however, it's perfectly accep- start kicking in. To have an economically viable
technical feasibility of a CMOS 32nm techno- table to stay planar, thus achieving a different production in a state of the art process, given
logy. This was done with the help of European trade-off between cost and performance. the complexity and the cost of the process
fundings, and with much more partners than (with a million $ mask set), we need very stan-
the former project NANOCMOS (for the 45nm What do you foresee for the future process dardized high-volume chips, the so-called “kil-
node) but also with a broader scope of re- technology research in Europe ? ler applications”.
search themes covering all the ingredients ne- The FP6 work programme was positioned for Beyond the industrial benefit, such a project is
cessary for the technology to become reality, early research in semiconductor technology and above all the story of a cross-border human
semiconductor metrology equipments, new the following development phase was pursued collaboration working in synergy towards a
material evaluation, device simulation and mo- in the EUREKA/MEDEA+ framework. Due to the common goal. The project was a memorable
delisation, physical and electrical characteri- escalating costs of the leading edge technology human experience, a sort of multicultural, multi-
zation and process modules developments for developments, the industry has adopted a cost interest community of scientists and engineers
32nm, even extending to 22nm. All the re- sharing attitude that requires pooling together with incredible talents acting like a network of
search themes had a common purpose, i.e. in- the ressources and creating larger and larger al- excellence. An important thrust behind the suc-
tegrate the process modules to finalize a liances; these alliances become global, reaching cess of the project was the considerable ex-
technology with a good chance to become a transcontinental size. At the European level, a pertise coming from academic and research
economically viable. The Pullnano project ends new Public-Private instrument exists: a JTI (Joint institutes scattered all over Europe from Ireland
but it doesn't mean that everything stops there ; Technology Initiative) specifically targeting the to Poland and from Sweeden to Greece. This
from now on, there is still a long road to a qua- micro-nanoelectronic industry which is federa- human dimension of the project will survive,
lified technology platform then to “productiza- ted under the ENIAC (name of the European such a network of relationship has to and will
tion” and finally to the ramp up of a volume Technology Platform dedicated to Nanoelectro- continue to thrive in the future !
production. Technology is only the enabler ma- nics). It is within this new framework as well as
king later the IC product become reality. the existing EUREKA /MEDEA+ (renamed CA- Focus
TRENE) that a future industry led consortium will
Do the results position Europe competiti- continue semiconductor technology research Pullnano key numbers
vely for the future ? with a focus shifting towards “More than Moore”
> Means & Money
The Pullnano project puts Europe and the eu- applications. The FP7 repositions itself for the
45.15 M! Total cost
ropean manufacturers in a strong competitive longer term “Beyond CMOS” research which is 25.00 M! EU funding
position as long as applications and products largely taking place in an academic environment. 38 Partners
come quickly to fruition The chosen solutions However, this does not mean that FP7 can't ac- 13 Countries
commodate smaller scope projects (STREP) still +300 Researchers
like FDSOI to reduce junction leakages and
3335 Man-years
High K/metal gate to reduce gate leakage are dedicated to advancing Moore's Law (“More
key concepts to design low power consump- MOORE”). Many themes related to modelisa- > Proficiency & Visibility
tion ICs targeting battery-powered portable ap- tion, advanced characterisation techniques, new 480 Publications
170 Deliverables
plications which was our main focus in the materials, or process modules like lithography
31 Lectures/tutorials
project. The SRAM cell results from Pullnano can federate the huge existing competences, 3 Patents
are comparable to Intel's coming announce- knowledge and know-how generated over the
ment at IEDM 2008 on a cell area basis. The years in Europe. A powerful 3335 man-years project
Pullnano results demonstrate a solution to the 9%
35 % Academic
ITRS roadmap at 32nm and, already for more What is the benefit of the Pullnano project
than a year, there has been a vision for multi- for the industrial community in Europe ? Industrial
gate (at least dual gates, or trigate) devices at We have developed the enabling technologies R&D Centers
22nm. At the individual transistor level, these for the future. Now it's the turn of the electronic 23 % SME
22nm devices are electrically satisfactory. We systems industry to invent applications using 33 %
4
And now, a step toward tomorrow ? PROSPECTIVE
Beyond the benefits directly derived from the project results, the consortium partners are
having a look at various potential opportunities and at the challenging problems for future
research to build upon the Pullnano foundations. Olof Engström ( Chalmers), Gerard
Ghibaudo (Imep-Cnrs), Thomas Schulz (Infineon) explain how to focus on the promising
modelization, materials and characterization thematics.
5
PROSPECTIVE Olof Engström,
Chalmers University (Sweden)
The development of gate dielectrics looks Rare earth oxides offer interesting properties to
at rare earth oxides for the future fulfil such requirements. Even if their k-values
are moderate, their !E-values are high enough
Even before the debut of the Pullnano project, barrier height (offset to put them into the spotlight. The choice of
it became evident that, in order to keep the value, !E) seen by GdSiOx in Pullnano was based on this consi-
ability of MOS transistors to act as efficient an electron ready to deration, with the addition of silicon to Gd2O3
switches on the ride along the More-Moore leak between the to stabilize this oxide in its amorphous phase.
road, new dielectric materials for the gate func- gate metal and the While GdSiOx was demonstrated feasible by
tion will be necessary. The hafnium based die- transistor channel. the “High-k-Gang” (www.high-k-gang.eu) for
lectrics, which presently replace traditional At given limits of leakage current and insulator the 22nm node on SOI, a still higher k x !E –
silicon dioxide insulators, will probably find a thickness, the k and !E values are bound product needs to be developed for the nanoe-
substitute before the 22nm node is ready for roughly by a hyperbolic relation such that a lectronics landscape beyond this landmark. Al-
production. Two intrinsic material properties product, k x !E ≈ 70 eV is necessary for the 22 beit a multitude of challenging problems remain
are important for the choice of a new dielec- nm bulk LSTP node, while the corresponding in this terrain, a number of possible candidates,
tric. These are, on one side, the dielectric figure for silicon on insulator technology is in the like lanthanum based materials or even ferroe-
constant (k-value) and, on the other side, the range of 30 - 40 eV. lectrics, are still aces up our sleeves.
With their dedication to advanced characterization, the subproject 5 team depth profiling techniques using SIMS, AES and XPS have to be impro-
partners are the eyes of the Pullnano community, aiming to further shar- ved, e.g. by enhancing sensitivity or by model-based interpretation of the
pen the sight of our colleagues in the project and make the nanodevices depth profiles. The use of much brighter X-ray sources (Synchrotron ra-
and their properties more visible. Various tools and techniques are used diation) is likewise a must for a better analysis within the nanoscale de-
to characterise and simulate the whole list of physical parameters des- vice structures themselves or of very thin films. Also, as outlined by the
cribing in detail the key features of the investigated devices and materials. updated ITRS roadmap, models for mechanical stress engineering have
The scaling down of feature sizes in modern CMOS processes imposes been identified as an
very rigorous requirements for characterization methods with respect to important and diffi-
Characterization of
accuracy and reproducibility. To cope with the challenges of the 32nm and cult challenge for ul- high-k materials :
22nm nodes, the currently established measurement techniques have to timate nanoscale with the first ever
synchroton-radiation
be further improved or substituted by novel innovative approaches. One simulation capabi- XPS (X-Ray Photo-
electron Spectro-
example from the Pullnano project is the holodark technique used for the lity. Today's com- scopy), the
elemental composi-
strain measurement in the devices (see Focus). This technique is expec- mercial process tion of high-k layer
ted to potentially replace or complement the older Raman techniques simulators are far interfaces have been
investigated without
which have for instance a much more limited resolution. from providing ac- sample destruction.
For future needs, the characterization of the material composition and curate and physical
density at the interfaces high-k dielectric/metal and high-k dielectric/Si, strain fields !