AO4468

30V N-Channel MOSFET

General Description
The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.

Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 10.5A < 17m < 23m

ESD Protected 100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D G G S S S S Bottom View D

Absolute Maximum Ratings TA=25 unless otherwise noted C Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
C

Maximum 30 20 10.5 8.5 50 19 18 3.1 2 -55 to 150

Units V V A A mJ W C

VGS TA=25 C C TA=70 ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Rev 6: December 2010

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Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V C TJ=55 VDS=0V, VGS=16V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=10.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=9A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10.5A IS=1A,VGS=0V TJ=125 C 1.2 50 14 20 18 36 0.75 1 4 740 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 110 82 1.1 15 VGS=10V, VDS=15V, ID=10.5A 7.5 2.5 3 5 VGS=10V, VDS=15V, RL=1.45, RGEN=3 IF=10.5A, dI/dt=100A/s 3.5 19 3.5 18 9 22 12 888 145 115 1.7 17 24 23 1.8 Min 30 1 5 10 2.4 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 The C. value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 using 10s junction-to-ambient thermal resistance. C, C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 Ratings are based on low frequency and duty cycles to keep C. initialTJ=25 C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with C. 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 6: December 2010

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 ID (A) ID(A) 3V 15 10 5 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 0 25 50 75 100 125 150 175 200 Temperature ( C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4V 3.5V 25 20 15 10 5 125 C 25 C 30 VDS=5V

RDS(ON) (m )

20

VGS=4.5V

VGS=4.5V ID=9A

15 VGS=10V 10

VGS=10V ID=10.5A

17 5 2 10

40 ID=10.5A 35 30 RDS(ON) (m ) 25 20 15 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25 C 125 C IS (A)

1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125 C 25 C

40

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AO4468

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=10.5A 8 Capacitance (pF) 1200 1000 Ciss 800 600 400 Coss 2 200 0 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 5 15 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30

VGS (Volts)

1000.0

10000 TA=25 C

100.0 ID (Amps) RDS(ON) limited 10s 100s 1ms 10ms 0.1 TJ(Max)=150 C TA=25 C 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) 0.001 1000 Power (W)

10.0

100

1.0

10

Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=75 C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1

PD Ton 10

T 100 1000

Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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Gate Charge Test Circuit & Waveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) t on tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

Rev 6: December 2010

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