Conf Piezo Mems 2011

2
nd
Interna*onal
Workshopon
PiezoelectricMEMS
MaterialsProcessesToolsDevices
September67,2011
EPFLLausanneSwitzerland
.
Sponsoredby
2
nd
Interna*onalWorkshoponPiezoelectricMEMS
MaterialsProcessesToolsDevices
Weobserveanincreasingworldwideinterestinpiezoelectricthinlm
MEMSdevices.S;llgreateortsareneededtoestablishreproducible
processing routes, reliable integra;on, op;mal poling procedures,
standards in characteriza;on methods, op;mal device design, and
reproducible opera;on condi;ons. A@er the success of the rst
workshop in 2010 at Aachen, we aim at bringing together again
researchers and engineers from industry and academia to report and
discuss on progress in in the eld, and s;mulate exchange on
experienceandpossiblecoopera;on.Acombina;onofpresenta;ons
anddiscussionswillgiveexpertsandresearchersthechancetoboost
thispromisingandquicklydevelopingmarket.
Theprogramincludesmanyinteres;ngandexci;ngtalksonsynthesis
of piezoelectric thin lms, on integra;on, on tes;ng and
instrumenta;on, and on some of the many applica;ons that are
foreseeableforpiezoelectricMEMS.
Wehopethisworkshopisagreatopportunityforcompaniesworking
inthinlmprocessing,microfabrica;onandMEMStolearnaboutthe
stateoftheartinpiezoelectricMEMSbasedonferroelectricandnon
ferroelectricpiezoelectricthinlms.
OnbehalfoftheorganizingcommiLee
PaulMuralt
Chair
(i)
Chair:
P.Muralt SwissFederalIns;tuteofTechnology
EPFL(Switzerland)
Interna;onaladvisoryboardandprogramcommiLee:
T.Matsushima Panasonic(Japan)
T.Metzger EPCOS(Germany)
R.Polcawich USArmyLabs(USA)
H.Raeder SINTEF (Norway)
S.Tiedke Aixacct (Germany)
S.TrolierMcKinstry PennstateUniversity(USA)
K.Udayakumar TexasInstruments(USA)
OrganizingcommiLee:
P.Muralt
P.Ulrich(Sciprom)
S.Tiedke(Aixacct)
Localarrangements:
L.Jin
N.Chidambaran
A.Mazzalai
R.Matloub
WorkshopOrganizers:
(ii)
InvitedSpeakers
Exhibitors
aixACCTSystemsGmbH
SolMateS
YOUTEC/DJKEurope
SrowthiBharadwaja, PennStateUniversity
RolandKessels, AIXACCT
TakakiyoHarigai, Panasonic
GillesMoulard, TDKECOS
TuomasPensala, VTT
GianluccaPiazza, UniversityofPennsylvania
RonPolcawich, USArmyLaboratories
GuusRijnders, UniversityTwente
FrodeTyholdt, SINTEF
(iii)
September 6-7, 2011

2
nd
International Workshop on Piezoelectric MEMS
Materials - Processes - Tools - Devices

Program

Tuesday Morning 6 September
Time Speaker Title
0800-0900 Registration
0900 P. Muralt,
EPFL
Welcome
Chair: S. Trolier-McKinstry
0930 T. Harigai,
Panasonic Corporation
Piezoelectric Thin Films and Their Applications inv
1005 M. Klee,
Philips Research
Piezoelectric thin films: A Technology platform for thin film
ultrasound transducer arrays

1025 BREAK with exhibition and posters
1045 Polcawich,
US Army Research Lab.
PiezoMEMS Technology for Enabling mm-Scale Robotics inv
1120 M. Schreiter,
Siemens AG,
Corp.Techn.
Piezoelectric MEMS based energy harvesting module for
wireless tire pressure monitoring

1140 R. Vullers,
IMEC Holst Center
AlN and PZT Thin Films: Essential Ingredients for
Piezoelectric Energy Harvesters

1200 P. Janphuang,
IMT-EPFL
MEMS Based Piezoelectric Harvesters: From Thick Sheet to
Thin Film Epitaxial Piezoelectric Materials

1215 D. Remiens,
IEMN-CNRS
Performance of piezoelectric nanostructures

1230-1400 LUNCH with exhibition and posters

Tuesday Afternoon 6 September
Time Speaker Title
Chair: T. Metzger
1400 G. Piazza,
Univ. of Pennsylvania
Laterally Vibrating Micro and Nanomechanical Piezoelectric
Aluminum resonators for RF Communication and Chemical
Sensing
inv
1435 V. Felmetsger
OEM Group, Inc.
Sputter Deposition of Piezoelectric AlN Thin Films on
Vertical Walls of Micromechanical Devices

1450 G. Moulard,
TDK-EPC
Piezo-MEMS for RF applications inv
1520-1545 BREAK with exhibition and posters
1545 T. Pensala,
VTT
Piezo-actuated AlN-Si MEMS resonators and sensors inv
1615 R. Matloub
LC-EPFL
Sc doped AlN thin films and their properties
1630
T. Baron
FEMTO-CNRS
FBAR filters for space application based on LiNbO
3

membrane

1645 Piorra, A.
University of Kiel
Lead Free Laser Deposited Thin Films Of
0.5(Ba
0.7
Ca
0.3
TiO
3
)0.5(Ba(Zr
0.2
Ti
0.8
)O
3
)

1700 S. Trolier-McKinstry
PennState University
Microcontact Printing of PZT Films for MEMS

1720 Adjourn
1900 DINNER at Beau Rivage (Ouchy)

POSTERS 6 & 7 September
Author Title
P1 T. Baron
FEMTO-CNRS HBAR and their applications

P2 N. Chidambaram
EPFL-IMX
PZT thin film growth on insulators for interdigitated
electrode applications

P3 V. Felmetsger,
OEM group Reactive Magnetron Sputtering of Ultrathin Piezoelectric

P4
S.Y. Kang
Samsung Elec.-Mech.
Influence of Temperature and O
2
Flow Rate on the Structure
and Ferroelectric Properties of PZT Films Deposited by RF
Magnetron Sputtering

P5 A. Mathewson
Tyndall National Institute
Influences of Titanium Underlayer on (002) Oriented
Aluminium Nitride

P6 A. Mazzalai
EPFL-IMX
Conception of interdigitated electrodes based cantilever for
piezoelectric energy harvesting

P7 E. Milyutin
EPFL-IMX
Local polarity control of AlN thin films
P8 M. Pham-Thi
Thales Research
Hyper Frequency properties of 3 inches-frozen capacitive
MEMS with PZT thin films processed by sol-gel

P9 T. Verdot
FEMTO Active damping with a piezoelectric MEMS device

P10 A. Vogl
SINTEF
Modelling of piezoelectric micromachined ultrasound
transducers (pMUT) for medical use.

Wednesday Morning 7th September
Time Speaker Title
Chair: T. Matsushima
0840 G. Rijnders,
University of Twente
All Oxide PiezoMEMS devices by Pulsed laser Deposition:
Properties of Clamped Piezoelectric Epitaxial PZT Thin
Films
inv
0910 A. Janssens,
SoLMateS
Introduction of new manufacturing technology for Piezo
(PZT) MEMS production

0930
S. Gariglio
University of Geneva
Epitaxial Ferroelectric Pb(Zr
0.2
Ti
0.8
)O
3
Thin Films on
Silicon:Growth and Physical Properties

0945 M. Kratzer,
Oerlikon Balzers
Oerlikon PVD production solution for in-situ large scale
deposition of PZT films

1000-1020 BREAK with exhibition and posters
1020 R. Kessels,
AIXACCT
Qualification and Quantification of piezoelectric MEMS inv
1050 Le Rhun, G.
CEA-LETI
Direct And Indirect Piezoelectric Characterization of PZT
Thin Films for MEMS Applications

1105 T. Kijima,
YOUTEC
Spin-Coat Technology of KNN Film Deposition with Oxygen
Pressurizing RTA

1120 K.-A. Bui-Thi
Thales Research
Properties of PMN-PT 65/35 thin film oriented -<011> at
radio frequency measured by coplanar waveguide

1135 B. Malic
Josef Stefan Inst.
Influence of Solution Synthesis Conditions on Crystallization
and Properties of Functional Oxide Thin Films

1150 S. S. N. Bharadwaja,
Pennstate University
Low Temperature Laser Processing of Ferroelectric Thin
Films
inv
1220-1400 LUNCH with exhibition and posters

Wednesday Afternoon 7th September
Time Speaker Title
Chair: S. Tiedke
1400 F. Tyholdt,
SINTEF
FP7 piezoVolume - High Volume Piezoelectric Thin Film
Production Process For Microsystems
inv
1430 J. Phair
Polight
Manufacture of Minature Tuneable Autofocus Lenses (TLens)
using Piezo MEMS

1445 S. Han
Samsung Electr.Mech.
Wafer Level Poling of PZT thin films for MEMS Sensor
Devices

1500 V. Cauda
Italian Inst.Techn.
Effects of Nanoscale Confiment on Ferroelectric Properties:
Research Activity at the Center for Space Human Robotics

1515
E. Mounier,
Yole Development
2010-2015 Market Analysis of PiezoMEMS

1530 BREAK with exhibition and posters
1600 S. Trolier-McKinstry
PennState University
Round table discussion:
1650 P. Muralt Closing remarks
1700 END

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33
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HighqualityPZTthinfilms
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Typicaldisplacementdata(1mPZT)
PZT(MPB) MeanValue Stdev
d
33
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d
31
pm/V >120 <20
Above results of d
33
are measured using DBLI
(AixACCT systems) on 1x1 mm pads. The d
31
values are calculated from cantilever data

measuredusingLDV(Polytec).
Technicalbenefitsoflaserdeposition
The PiezoFlare platform is based on laser
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To obtain the right actuation or sensing
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Contact
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INNOVATION HAS A NAME.

Rogier Lodder, Senior System Engineer
After conversations with dozens of customers, we integrated sputtering, etch, thermal
and cleaning functions onto one ultra-compact platformHexagon. It handles the most
advanced packaging challenges with throughput up to 60 wph and maintenance intervals
of more than 4000 wafers. So we can say to our customers, we heard you.
Today lower cost of ownership has a name: Hexagon.
Learn more at www.oerlikon.com/systems/hexagon
Our customers R&D director
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Thats how
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Part I
Ttrsux. 6, Srrrrmara
Oaxi rarsrxrxrroxs
2
nd
International Workshop on Piezoelectric MEMS 2011 3
Piezoelectric Thin Films and Their Applications
Takakiyo Harigai
1
, Kazuki Komaki
2
, Osamu Watanabe
3
, Satoru Fujii
1
, Yoshiaki Tanaka
1
, Michihito
Ueda
1
, Hideaki Adachi
1
and Eiji Fujii
1
1
Panasonic Corporation, Japan
2
Panasonic Elecronic Devices Co., LTD, Japan
3
Panasonic System Networks Co., LTD, Japan
Piezoelectric materials have been used for many kinds of devices such as actuators for inkjet printer
heads and sensors for angular velocity detection. Piezoelectric thin lms formed on a Si substrate can
be processed into arbitrary congurations by standard micro-electro-mechanical systems (MEMS) pro-
cesses. Performance enhancement and miniaturization are easier for a device with piezoelectric MEMS
than for a normal Si-MEMS device. The importance of the piezoelectric thin lms is set to increase in
the future.
We developed a technique to form piezoelectric materials with perovskite structure on various sub-
strates (MgO, Si, SUS). We grew Pb(Zr,Ti)O
3
(PZT), Pb(Mg,Nb)O
3
-Pb(Zr,Ti)O
3
(PMN-PZT), and lead-
free (Na,Bi)TiO
3
-BaTiO
3
(NBT-BT) thin lms with the thickness of 3.0 mby RF magnetron sputtering.
The growth of these thin lms on MgO substrates was epitaxial, and the lms on the Si or SUS were
oriented in (001) single direction. The piezoelectric coecients d
31
of these lms were -150 pm/V for
PZT/Si, 225 pm/V for PMN-PZT/Si, and 155 pm/V for NBT-BT(100)/MgO.
The PZT lms were applied to the sensor for angular velocity detection and the actuator of the ink
jet printer head. In the angular velocity sensor, PZT/Si was processed into a tuning fork conguration by
Si deep etching. This conguration by itself can vibrate the tuning fork and detect the angular velocity
at the same time. Thus, we succeeded in downsizing to 1/100 in volume compared with the conventional
product in which bulk PZT or quartz were arranged for three dimensions. This PZT/Si sensor is now
widely used for a position sensing in a car navigation system, and for shake compensation of a digital
camera. The ink jet head for industrial on-demand printers was also miniaturized by MEMS processing,
and realized printing resolution of 1, 200 dpi, and printing speed of 120 m/min.
The material properties of NBT-BT/MgO lms with (001), (110), and (111) orientation were eval-
uated. From X-ray diraction analyses, (001)-lms had a tetragonal structure, and (111)-lms had a
rhombohedral structure with no dependence on BT content. The maximum piezoelectric coecients of
(001)- and (111)-lms were obtained around morphotropic phase boundary (MPB) compositon of the
bulk. On the other hand, (110)-lms were distorted to orthorhombic structure which does not form in
bulk state. The piezoelectric coecient d
31
of 110 directions was only 9 pm/V whereas d
31
of 001
directions was as high as 221 pm/V, comparable to PMN-PZT/Si. This work is promising to open an
important avenue for the improvement of piezoelectricity larger than that of the original material, and to
actual electromechanical devices using lead-free piezoelectric lms.
4 2
nd
International Workshop on Piezoelectric MEMS 2011
Piezoelectric Thin Films: A Technology Platform for Thin Film
Ultrasound Transducer Arrays
M. Klee
1
, R. Mauczok
1
, C. van Heesch
1
, H. Boots
1
, W. Keur
1
, M. de Wild
1
and B. Op het Veld
1
1
Philips Research, Eindhoven
Piezoelectric thin lm technologies get more and more relevance for miniaturized and integrated
actuators and transducers. Applications of miniaturized piezoelectric thin lm devices are for example
sensors for proximity sensing or ultrasound transducer arrays for imaging.
A piezoelectric thin lm technology platform has been developed, which processes lead based per-
ovskite piezoelectric thin lms by spin-on processing on thin lm membranes. Making use of litho-
graphic patterning, piezoelectric thin lm ultrasound transducers have been realized, which are operating
in the d
33
mode.
With the piezoelectric thin lm platform, piezoelectric thin lm ultrasound transducer arrays have
been realized, which dependent on the design are operating at frequencies of 50 KHz up to >10 MHz.
The piezoelectric thin lm ultrasound transducer arrays are tested with respect to their performance.
The piezoelectric thin lm membrane transducer arrays operating at 4 MHz and above show a very good
acoustic matching to water. This results in a bandwidth of the transducer arrays, which is equal or even
larger than 100%. The output pressure of the thin lm piezoelectric ultrasound transducer arrays is linear
dependent from the applied voltage. These piezoelectric thin lm ultrasound transducer arrays, due to
their similar operation conditions as traditional ceramic or single crystal ultrasound transducer, can be
operated with standard ultrasound machines. With the piezoelectric thin lm ultrasound transducer
arrays with 3242 elements ultrasound images of e.g. nylon wires with 0.12 mm diameter in a water
tank have been demonstrated.
The technology platformhas also developed to realise ultrasound transducers operating at 50100 KHz,
which have been successfully applied for proximity sensing.
2
nd
PiezoMEMS Technology for Enabling mm-Scale Robotics
R.G. Polcawich
1
, J.S. Pulskamp
1
, G. Smith
1
, S. Bedair
1
, T. Ivanov
1
, R. Proie
1
, R. Kaul
1
, L. Sanchez
1
and D. M. Potrepka
1
1
US Army Research Laboratory, Adelphi, MD, USA
Piezoelectric MEMS (PiezoMEMS) technology can enable integrated solutions for a wide variety
of applications including radio and cellular communications systems, biomedical, consumer electron-
ics, and mm-scale robotics. Several piezoelectric materials are of interest for this technology. AlN
thin lms lead the way in the front-end ltering technology with lm bulk acoustic resonators (FBAR)
currently seeing heavy demand in cellular phones. Another material of keen interest is lead zirconate
titanate (PZT) especially for applications requiring low voltage, high stroke, high force actuators. As
part of an on-going research activity at the Army Research Laboratory, PiezoMEMS technology using
PZT thin lms has been developed in the area of RF applications and mm-scale robotics. Specically,
switches and relays covering a frequency space from DC to the high GHz have been demonstrated for
mechanical logic for low power embedded microcontrollers and high frequency phase shifters to en-
able electronically steerable antennas. PiezoMEMS actuators have also enabled two degree-of-freedom
actuators capable of matching the kinematic performance of insects at the mm-scale. These actuators
combined/integrated with low power sensors are being developed to enable mm-scale insect-inspired
robotic platforms. This presentation will focus specically on the technologies of interest for mm-scale
robotics including advancements in actuator design, integrated sensing, integration of a mechanical logic
based microcontroller and performance will be presented with respect to bio-inspired microight.
6 2
nd
Piezoelectric MEMS Based Energy Harvesting Module for Wireless Tire
Pressure Monitoring
Matthias Schreiter
1
, Dana Pitzer
1
, Michael Schier1, Andreas Wol
1
, Ingo K uhne
1
, Julian Seidel
1
,
Helmut Seidel
2
and Alexander Frey
1
1
Siemens AG, Corporate Technology, Munich, Germany
2
Saarland University, Chair of Micromechanics, Microuidics/Microactuators, Saarbruecken,
Germany
Recently, MEMS-based energy harvesting systems have gained increasing importance to power
wireless sensor networks. While conventional batteries represent a simple and in many cases sucient
power supply, dedicated energy harvesting solutions enable the implementation of sensor applications
where the operation conditions such as inaccessibility of the sensor in conjunction with long lifetime
requirements ban the usage of batteries.
This presentation gives an overview about the development of a demonstrator for a piezoelectric
MEMS based power generator for tire pressure sensors. Conventional battery driven systems are usually
mounted in the wheel rim. However, an arrangement on the inner liner of the tire would enable the
detection of additional parameters such as tire temperature, friction, wearout and side slip. This approach
implies stringent system requirements favouring an energy harvesting approach against a battery. This is
in particular a total system weight less than 7 grams and a minimum life time of 8 years. The harvesting
module needs to provide a minimum average power of 3 W to power pressure sensor, microcontroller,
and RF-frontend. The energy harvesting module requires a system approach with adapted component
interfaces. The generator is based on a piezoelectric MEMS cantilever with a triangular shape which
enables high energy densities. Tire related forces during the tread shue passage are proposed to be
used for a pulsed excitation. To optimize the generator performance, piezoelectric thin lms of dierent
materials (AlN, ZnO, and PZT) were evaluated with respect to relevant material characteristics such as
electro-mechanical coupling, dielectric constant and charge constant.
An analytical approach was implemented modeling the generator systemas a whole which enables to
calculate the supplied average power and voltage depending on input parameters, cantilever geometries,
material parameters, and the interface circuit. The gure illustrates a thus obtained parameter space
for the generator design to meet requested output characteristics (generator area and piezoelectric thin
lm parameters are xed). First demonstrators were tested showing an electrical energy density of
35 nJ/mm
2
.
This work is supported by the Bundesministerium f ur Forschung und Entwicklung, Germany,
and embedded in the project ASYMOFAutarke Mikrosysteme mit mechanischen Energiewandlern
f ur mobile Sicherheitsfunktionen (reference 16SV3336).
2
nd
AlN and PZT Thin Films: Essential Ingredients for Piezoelectric Energy
Harvesters
Ruud Vullers
1
, Madhusudhanan Jambunathan
1
, Rene Elfrink
1
, Christine de Nooijer
1
, Rob Van Schaijk
1
1
imec/Holst Centre, Eindhoven, The Netherlands
The rapidly growing need for energy autonomy of wireless sensor nodes can only be well served by
using various energy harvesting technologies in combination with energy storage devices. The market
acceptance of such solutions necessitates further cost reduction, which can be achieved by taking advan-
tage of MEMS technology. This paper focuses on the principle and thin lm technology development
for piezoelectric harvesting devices within imec/Holst Centre.
Aluminum nitride (AlN) was chosen as piezoelectric material for its material properties and its well-
known sputter process. For power generation AlNis better or at least comparable with other piezoelectric
materials like, e.g. PZT [1]. A maximum power of 225 W has been measured at an acceleration of 2.5 g
and a resonance frequency of 929 Hz (Fig. 1a). The package of MEMS energy harvesters is essential
both for reliability, in preventing excessive displacements, as well for preventing air damping by the use
of vacuum [2]. Therefore, the released MEMS structures are packaged with a 6-inch wafer level process,
using two glass substrates with a cavity depth of 600 m (Fig. 1b). Devices with dierent beam and mass
size were fabricated to cover a 200-1200 Hz frequency range. The devices in vacuum have a large Q,
and therefore a very narrow bandwidth of less then 1%. This will hinder practical applications for single
frequency input excitation, since it will be very dicult to match the resonance to the ambient frequency.
Frequency tuning is therefore essential [3]. This can be accomplished by adding wing like structures
next to the beam (Fig. 1c). In this case, PZT is the material of choice, for its higher piezoelectric constant
compared to AlN. Modeling indicates that 10 to 20% tuning can be reached with PZT (Fig. 1d). Progress
in development of sputtering of PZT thin lms and the inuence of deposition conditions, anneal and
poling on RF and pulsed DC sputtered layers will be discussed.
2
nd

AlN and PZT Thin Films:
Essential Ingredients for Piezoelectric Energy Harvesters

Ruud Vullers, Madhusudhanan Jambunathan, Rene Elfrink, Christine de Nooijer, Rob Van Schaijk
imec/Holst Centre
Eindhoven, The Netherlands

1
Affiliation, Country
2
Affiliation,Country

The rapidly growing need for energy autonomy of wireless sensor nodes can only be well served by
using various energy harvesting technologies in combination with energy storage devices. The market
acceptance of such solutions necessitates further cost reduction, which can be achieved by taking
advantage of MEMS technology. This paper focuses on the principle and thin film technology
development for piezoelectric harvesting devices within imec / Holst Centre.
Aluminum nitride (AlN) was chosen as piezoelectric material for its material properties and its
well-known sputter process. For power generation AlN is better or at least comparable with other
piezoelectric materials like, e.g. PZT [1]. A maximum power of 225 W has been measured at an
acceleration of 2.5 g and a resonance frequency of 929 Hz (Fig 1a). The package of MEMS energy
harvesters is essential both for reliability, in preventing excessive displacements, as well for
preventing air damping by the use of vacuum [2]. Therefore, the released MEMS structures are
packaged with a 6-inch wafer level process, using two glass substrates with a cavity depth of 600 m
(Fig. 1b). Devices with different beam and mass size were fabricated to cover a 200-1200HZ
frequency range. The devices in vacuum have a large Q, and therefore a very narrow bandwidth of
less then 1%. This will hinder practical applications for single frequency input excitation, since it will
be very difficult to match the resonance to the ambient frequency. Frequency tuning is therefore
essential [3]. This can be accomplished by adding wing like structures next to the beam (Figure 1c). In
this case, PZT is the material of choice, for its higher piezoelectric constant compared to AlN.
Modeling indicates that 10 to 20% tuning can be reached with PZT (Fig 1d). Progress in development
of sputtering of PZT thin films and the influence of deposition conditions, anneal and poling on RF
and pulsed DC sputtered layers will be discussed.
In case of shock induced vibration harvesting, the seismic mass is excited with a mechanical shock
after which the mass will ring-down at its natural resonance frequency [4]. During the ring-down
period, whose duration increases with increasing quality factor, part of the mechanical energy is
harvested. The output power has multiple maxima with a bandwidth of about 100% each.Therefore,
the main advantage of this principle is that the frequency match condition is not relevant. In case of
application inside car tires, repetitive high amplitude shocks occurs every rotation. A high quality
factor harvester enables continuous power generation of a few tens of W, sufficient to power a
wireless sensor node.

References
[1] R. Elfrink, et al., conf. proc. PowerMEMS 2008, p.249-252 [3] D. Zhu et al., Meas. Sci. Technol. 21 (2010)
[2] R. Elfrink, et al, IEEE IEDM2009, pp. 543-546 [4] B. Cavallier, et al, IEEE Ultrason. Symp. 2005, p.943-945

b)

a)
c)
d)
Figure 1 : a) Power output for AlN piezoelectric energy harvester b) Wafer level packaged device c) Frequency tuning design
for a piezo electric, by adding overhanging PZT wings (grey areas) next to the beam d) the change of the frequency that
can be reached
Fig. 1: a) Power output for AlN piezoelectric energy harvester b) Wafer level packaged device c) Frequency tuning
design for a piezo electric, by adding overhanging PZT wings (grey areas) next to the beam d) the change of the
frequency that can be reached
In case of shock induced vibration harvesting, the seismic mass is excited with a mechanical shock
after which the mass will ring-down at its natural resonance frequency [4]. During the ring-down pe-
riod, whose duration increases with increasing quality factor, part of the mechanical energy is harvested.
The output power has multiple maxima with a bandwidth of about 100% each.Therefore, the main ad-
vantage of this principle is that the frequency match condition is not relevant. In case of application
inside car tires, repetitive high amplitude shocks occurs every rotation. A high quality factor harvester
enables continuous power generation of a few tens of W, sucient to power a wireless sensor node.
[1] R. Elfrink, et al., conf. proc. Power MEMS 2008, pp. 249-252. [2] R. Elfrink, et al., IEEE IEDM2009, pp.
543-546. [3] D. Zhu et al., Meas. Sci. Technol. 21 (2010). [4] B. Cavallier, et al., IEEE Ultrason. Symp. 2005,
pp. 943-945.
8 2
nd
MEMS Based Piezoelectric Harvesters: From Thick Sheet to Thin Film
Epitaxial Piezoelectric Materials
P. Janphuang
1
, D. Isarakorn
1
, D. Briand
1
, S.Gariglio
2
, A. Sambri
2
, J.-M. Triscone
2
, F. Guy
3
, J.W.
Reiner
4
, C.H. Ahn
4
and N.F. de Rooij
1
1
Ecole Polytechnique F ed erale de Lausanne (EPFL), Switzerland
2
University of Geneva, Switzerland
3
Engineering school of Geneva, Switzerland
4
Yale University, USA
This work demonstrates MEMS based vibration piezoelectric energy harvesters. The characteristics
and performances of two dierent energy harvesting devices based on thick PZT sheet and epitaxial
PZT thin lm have been investigated. The harvester made by bonding a thick PZT sheet produced a
power density of 2.41 W/mm
3
/g
2
. While with the device based on an epitaxial PZT thin lm reached a
power density of 85 W/mm
3
/g
2
. To compare our device performances, the Figure of Merit dened by
Mitcheson [1] is taken into account (Table 1).
2
nd

References
[1] P. D. Mitcheson, et al., Proceedings of the IEEE, vol. 96, pp. 1457-1486, 2008.
[2] E. E. Aktakka et al., IEE IEDM 2007, San Francisco, pp. 31.5.1-31.5.4.
[3] G. A. Ardila Rogrguez et al., Proc.PowerMEMS 2009, Washington DC, pp. 197-200.
[4] S. Roundy and P.K. Wright, Smart Mater. Struct. 13 (2004) pp. 1131-1142.
[5] S. Trolier-Mckinstry and P. Muralt, J. Electroceramics. 12 (2004), pp. 7-17.
[6] D. Shen et al., J. Micromech. Microeng., 18 (2008) 055017.

0 200 400 600 800 1000
0.0
0.6
1.2
1.8
2.4
3.0

Power (W)
Voltage (V
rms
)
Load resistance (k)
O
u
t
p
u
t

p
o
w
e
r

(
W
)
0.0
0.4
0.8
1.2
1.6
2.0
V
o
l
t
a
g
e

o
u
t
p
u
t

(
V
r
m
s
)
130 135 140 145 150 155
0
40
80
120
160
Power @ 218 k

P
o
w
e
r

(
W
)
Frequency (Hz)
0 5 10 15 20 25
0.0
0.2
0.4
0.6
0.8

V
o
l
t
a
g
e

(
V

g
-
1
)
Loadresistance (k)
0 5 10 15 20 25
0
40
80
120

C
u
r
r
e
n
t

(
A

g
-
1
)
0 5 10 15 20 25
4
8
12
16
Theoretical
Experimental
Theoretical
Experimental
Theoretical
Experimental

P
o
w
e
r

(
W

g
-
2
)
0 5 10 15 20 25
0.0
0.2
0.4
0.6
0.8

V
o
l
t
a
g
e

(
V

g
-
1
)
Loadresistance (k)
0 5 10 15 20 25
0
40
80
120

C
u
r
r
e
n
t

(
A

g
-
1
)
0 5 10 15 20 25
4
8
12
16
Theoretical
Experimental
Theoretical
Experimental
Theoretical
Experimental

P
o
w
e
r

(
W

g
-
2
)
Figure 3. The output power across 218 k as a
function of frequency at input acceleration of 1.0g
Figure 5. Theoretical and experiment power,
current, and voltage as a function of resistive load
for the epitaxial PZT harvester.
Figure 2. The output power (P
rms
) and output
voltage (V
rms
) as a function of resistive load at
input vibration of 0.1g and 145 Hz.
Figure 4. Optical image of an epitaxial PZT
harvester (active volume of 0.153 mm
3
). The inset
shows the Si mass on the backside of the cantilever.
Figure 1. Optical image of a thick PZT harvester
(active volume of 90 mm
3
) mounted on the shaker.
The accelerometer is used to determine the
acceleration level.
Table 1. Performances of our devices based
volume figure of merit (FoM
v
) proposed by
Mitcheson et al. [1].
9.28
92.78
0.13
13
2302
2302
0.98 (0.1g)
9.80 (1g)
0.153 Epitaxial PZT -
0.5 m
0.50
3.73
2.17
157.74
145
141
0.98 (0.1g)
9.80 (1g)
90 Thick PZT
sheet -130 m
FoM
v
(%)
Power
(m)
f
r
(Hz)
Input acc.
(m/s
2
)
Vol.
(mm
3
)
Piezoelectric
type
9.28
92.78
0.13
13
2302
2302
0.98 (0.1g)
9.80 (1g)
0.153 Epitaxial PZT -
0.5 m
0.50
3.73
2.17
157.74
145
141
0.98 (0.1g)
9.80 (1g)
90 Thick PZT
sheet -130 m
FoM
v
(%)
Power
(m)
f
r
(Hz)
Input acc.
(m/s
2
)
Vol.
(mm
3
)
Piezoelectric
type
2
nd
Bulk PZT ceramics present high electromechanical coupling which is highly desirable in piezoelec-
tric energy harvester. Several piezoelectric cantilevers based energy harvester with bulk PZT have been
proposed and investigated in recent years [2,3]. In our work, the thick PZT sheet was bonded onto sil-
icon cantilever using a spin coated UV activated epoxy. The harvester structure was designed to have
resonant frequency lower than 200 Hz in order to be matched by the ambient vibrations in environ-
ment [4]. Fabricated thick PZT harvester (Fig.1) produced an average output power of 2.17 W at 0.1 g
(145 Hz) (Fig. 2) and reached to 157.74 W at 1.0 g (141 Hz) with an optimal resistive load of 218 k
(Fig. 3). In order to achieve low resonant frequency structure, a high mass with a high volume is re-
quired in thick PZT harvester, resulting in low power density (2.41 W/mm
3
/g
2
). Moreover, wafer level
manufacturability is limited with the transfer of the PZT sheet and the mass onto the silicon structure.
Therefore, piezoelectric thin lms are promising [5,6] to develop a low volume harvesters using wafer
level manufacturing processes.
In this matter, we are developing MEMS scavengers using an epitaxial Pb(Zr
0.2
Ti
0.8
)O
3
thin lms
grown on silicon through oxide layers. The PZT with a composition of Zr/Ti=20/80 is chosen for its
good lattice match with oxide layers and for the highest power generation gure of merit due to a high
piezoelectric coecient and a low dielectric constant. The power generated from the epitaxial PZT
harvester (Fig. 4) measured at its resonant frequency (2.3 kHz) are 13 W/g
2
, 60 A/g and 0.28 V/g for
an optimal resistive load of 4.7 k (Fig. 5). The epitaxial PZT harvester can gererate high power and
current while maintaining low resistive load, which is favorable for impedance matching with electronic
devices.The eptixial PZT harvester still needs to be optimized by changing on the device geometry to
increase its ouput voltage to match with most of rectifying devices. An improved design included lower
resonant frequency, higher output voltage and power will be presented.
[1] P. D. Mitcheson, et al., Proceedings of the IEEE, vol. 96, pp. 1457-1486, 2008.
[2] E. E. Aktakka et al., IEE IEDM 2007, San Francisco, pp. 31.5.1-31.5.4.
[3] G. A. Ardila Rogrguez et al., Proc. Power MEMS 2009, Washington DC, pp. 197-200.
[4] S. Roundy and P.K. Wright, Smart Mater. Struct., 13 (2004) pp. 1131-1142.
[5] S. Trolier-Mckinstry and P. Muralt, J. Electroceramics. 12 (2004), pp. 7-17.
[6] D. Shen et al., J. Micromech. Microeng., 18 (2008) 055017.
10 2
nd
Performances of Piezoelectric Nano Structures
D. R emiens
1
, J. Costecalde
1
, D. Deresmes
1
, D. Troadec
1
and C. Soyer
1
1
IEMN-UVHC-DOAE-UMR 8520, Universit e des Sciences et Technologies de Lille, Bat. P3, BP
60069, 59652 Villeneuve dAscq Cedex, France
Piezoelectric nano-structures (islands of dimensions in the lateral size range 50500 nm) have been
fabricated by Focused Ga
3+
Ion Beam (FIB) etching on PbZr
0.54
Ti
0.46
O
3
thin lms obtained by mag-
netron sputtering. The degradation induced by the etching process is investigated through the evolution
of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by
Piezo-response Force Microscopy. The analysis of surface potential is performed by Kelvin Force Mi-
croscopy and the measurement of current-voltage curves is carried out by Conducting Atomic Force
Microscopy. Two kinds of structures, namely one based on crystallized lms and the other based on
amorphous ones, were studied. In this latter case, the amorphous lms are post-annealed after etching
to obtain crystallized structure. For the structures based on the crystallized and then etched lms, no
piezoelectric signal was registered that evidences a serious degradation of material induced by Ga
3+
ion implantation. For the structures based on the lms etched in amorphous state and then crystallized
the piezo response signal was near to that of the reference lms (crystallized and not etched) whatever
were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size eect was
observed. All these results will be presented at the workshop.
2
nd
Laterally Vibrating Micro and Nanomechanical Piezoelectric Aluminum
Nitride Resonators for RF Communications and Chemical Sensing
Gianluca Piazza
1
1
University of Pennsylvania, Philadelphia, PA, USA
Miniaturized resonators capable of operating at various frequencies on the same substrate have
gained interest as emerging technologies for addressing the specic needs of next generation radio
frequency (RF) communication and sensing systems. Large scale integration of micro and nanoscale
resonant mechanical devices will yield unprecedented platforms capable of low power and dynamic re-
conguration of radio links as well as the development of portable and disposable
`
Onoses
Ocharacterized
by very low limit of detection and high sensitivity to complex volatile organic chemical mixtures.
This talk presents the latest advancements undergoing at the University of Pennsylvania in the de-
velopment of a very promising class of these micro and nanomechanical resonators, namely laterally
vibrating (contour-mode) piezoelectric aluminum nitride resonators. These devices have shown the abil-
ity to operate from few MHz up to several GHz with low motional impedances that can be readily
interfaced with electronics and mechanical quality factors in excess of 1,000 and up to 4,000 in ambient
conditions. Switchable banks of resonators and lters for frequency synthesis and low energy signal
processing have been experimentally demonstrated. The impact of these multi-frequency low phase
noise oscillators and low loss lters goes well beyond providing a miniaturized replacement for existing
components; massive parallelism of these devices will infact enable new archicetures such as congnitive
radios.
Extreme miniaturization of the thickness of these AlN devices (50-250 nm) has beneted the demon-
stration of highly sensitivity and low limit of detection resonant chemical sensors. The reduced mass
and large surface area in conjuction with high Q at 100 s of MHz make these AlN nanoplates the ideal
candidates for the synthesis of very low power and portable sensors. These resonators have been arrayed
and functionalied with single-stranded DNA to yield an electronically controlled nose capable of iden-
tiying sub-part per billion (ppb) concentrations of Dinitrotoluene (DNT) and 100 s of ppb of Dimethyl
Methylphosphonate (DMMP).
In summary, this talk will oer an overview of the potentials of this miniaturized AlN resonator
technology and highlight how it will likely impact the More than Moore evolution of the semiconductor
industry.
12 2
nd
Sputter Deposition of Piezoelectric AlN Thin Films on Vertical Walls of
Micromechanical Devices
Valeriy Felmetsger
1
, Roozbeh Tabrizian
2
and Farrokh Ayazi
2
1
OEM Group Incorporated, USA
2
Georgia Institute of Technology, USA
We present a novel AlN thin lm processing technique that benets from the ecient longitudinal
piezoelectric eect as well as large transduction area provided by the sidewalls of silicon microstructures
[1]. Compared to FBARs where resonance frequency of the device is mainly a function of the piezo-
electric lm and substrate thicknesses, the resonance frequency of AlN-on-sidewall resonators is mainly
dened by the lateral dimentions of a relatively thick Si microstructure. This implies that devices with
resonance frequencies spreading across a wide frequency spectrum can be implemented on the same
substrate using lithography.
In this study, the Mo/AlN/Mo lm stacks were deposited by dual-target S-gun magnetrons onto ex-
perimental resonator structures with a sidewall height of 20 m patterned in Si device layer of 100-mm
diameter SOI wafers. Pre-deposition rf plasma etch of the substrate and thin AlN seed layer were em-
ployed to stimulate growth of smooth and well-textured Mo bottom electrode deposited by a dc powered
S-gun with rf substrate biasing. An alternating current (40 kHz) S-gun magnetron for reactive sputtering
enabled AlN growth in long-throw, low-pressure conditions with energetic particle bombardment thus
ensuring eective wall coverage and formation of strong texture in the lm.
2
nd

Sputter Deposition of Piezoelectric AlN Thin Films on Vertical Walls of
Micromechanical Devices

Valeriy Felmetsger
1
, Roozbeh Tabrizian
2
and Farrokh Ayazi
2

1
2
Georgia Institute of Technology, USA

We present a novel AlN thin film processing technique that benefits from the efficient longitudinal
piezoelectric effect as well as large transduction area provided by the sidewalls of silicon microstructures [1].
Compared to FBARs where resonance frequency of the device is mainly a function of the piezoelectric film
and substrate thicknesses, the resonance frequency of AlN-on-sidewall resonators is mainly defined by the
lateral dimentions of a relatively thick Si microstructure. This implies that devices with resonance
frequencies spreading across a wide frequency spectrum can be implemented on the same substrate using
lithography.

In this study, the Mo/AlN/Mo film stacks were deposited by dual-target S-gun magnetrons onto experimental
resonator structures with a sidewall height of 20 m patterned in Si device layer of 100-mm diameter SOI
wafers. Pre-deposition rf plasma etch of the substrate and thin AlN seed layer were employed to stimulate
growth of smooth and well-textured Mo bottom electrode deposited by a dc powered S-gun with rf substrate
biasing. An alternating current (40 kHz) S-gun magnetron for reactive sputtering enabled AlN growth in
long-throw, low-pressure conditions with energetic particle bombardment thus ensuring effective wall
coverage and formation of strong texture in the film.

The films were characterized by x-ray diffraction and scanning
electron microscopy. 700-nm-thick AlN films on the top surface
of the resonator exhibited single (0002) crystal orientation with
rocking curve full-width at half-maximum of 1.65. Sidewall AlN
and Mo film thicknesses were approximately half of top
thicknesses and were continuous on the entire surface of the
sidewalls.

The efficiency of the sidewall process for transduction of MEMS
devices was investigated using one-port width-extensional-mode
silicon bulk acoustic resonators.

[1] R. Tabrizian and F. Ayazi, The Proceedings of the 16th International Conference on Solid-State Sensors,
Actuators and Microsystems (Transducers 2011), Beijing, China, June 2011, pp. 1520-1523.
The lms were characterized by x-ray diraction and scanning electron microscopy. 700-nm-thick
AlN lms on the top surface of the resonator exhibited single (0002) crystal orientation with rocking
curve full-width at half-maximum of 1.65
. Sidewall AlN and Mo lm thicknesses were approximately

half of top thicknesses and were continuous on the entire surface of the sidewalls.
The eciency of the sidewall process for transduction of MEMS devices was investigated using
one-port width-extensional-mode silicon bulk acoustic resonators.
[1] R. Tabrizian and F. Ayazi, The Proceedings of the 16th International Conference on Solid-State Sensors,
Actuators and Microsystems (Transducers 2011), Beijing, China, June 2011, pp. 1520-1523.
2
nd
New Trends in Piezoelectric Devices for RF Application in Mobile Phones
Moulard Gilles
1
and Metzger Thomas
1
1
TDK EPC, Munich, Germany
The market requirements in the eld of Mobile Phones induce a continuous improvement of piezo
material for Radio-Frequency acoustic waves devices. Currently, only RF SAW(Surface Acoustic Wave)
/ BAW (Bulk Acoustic Waves) duplexers fulll all of the stringent customers requirements such as small
devices RF lters with large bandwidths, low insertion losses, low temperature frequency drift and low
price.
This presentation shows how the development of new SAW/BAW manufacturing process blocks
are consistent with the current and future market requirements. High quality piezoelectric material is
essential in BAW technology to achieve lter performances and especially a large bandwith in the GHz
range. But the piezoelectric and acoustic properties of the piezo layer are also largly inuenced by the
choice of the electrode material. Each change in the layer stack conguration leads also to process
integration issues that have to be solved before being implemented in production.
New process blocks have been developed for SAW technology, mainly to improve the power dura-
bility and to reduce the TCF of the devices in order to fulll the market requirements.
Today, due to the various dierent processes which have been developed, we are able to answer
the customer requirements for each duplexer bands. The mix process allows us to propose a hybrid
BAW/SAW duplexer which is already in mass production.
14 2
nd
Piezoactuated AlN-Si MEMS Resonators and Sensors
Tuomas Pensala
1
1
VTT, Finland
MEMS resonators have been studied for a long time as a potential replacement for quartz crystals in
oscillators and timing circuits. High performance resonators have been demonstrated over the years and
nally also entered the market recently, most of the work being based on electrostatic actuation.
The drawbacks of the electrostatic actuation include the need for a large DC bias voltage and/or
very narrow gaps in the actuator structures, combined with small actuation force. Thin lm piezoelec-
tric structures have been employed by several groups to overcome the drawbacks of the electrostatic
actuation, with the cost of e.g. increase in the MEMS fabrication process complexity.
Piezoactuation is compared to electrostatic actuation from the point of view of device physics, fab-
rication processes, device performance, yield and repeatability etc. Obtained advantages and issues
arising from the utilization of piezoelectric actuation in resonators are discussed.
Piezoactuated wafer level packaged MEMS resonators for the >10 MHz range fabricated at VTT
are presented and a review of the state of the art is performed.
The focus of the paper is on AlN-Si based resonator devices, but a comparison is made to other
possible piezomaterials and applications of piezo-MEMS.
2
nd
Electromechanical Properties of Al
0.9
Sc
0.1
N Thin Films Evaluated at
2.2 GHz: Film bulk acoustic resonators
Ramin Matloub
1
, Alvaro Artieda
1
, Cosmin Sandu
1
, Evgeny Milyutin
1
, and Paul Muralt
1
1
Ceramics Laboratory, Ecole Polytechnique F ed erale de Lausanne EPFL, Switzerland
Since a few years, aluminum nitride (AlN) thin lms have become a standard material for RF lters
in mobile phones. It is mostly used in duplex lters working around 2 GHz composed of thin lm
bulk acoustic wave resonators (TFBAR) connected in ladder type circuits. Pure AlN thin lms were
found to have maximal d
33,f
piezoelectric coecients of 5.3 pm/V. The coupling coecients of TFBARs
amounts to maximally k
2
=6.5 % considering standard materials parameters. Such a value is sucient
for covering the needs of current lter requirements for mobile phones. However, there are other lters
types and applications that would require larger coupling factors in order to achieve larger bandwidths.
Recently it was shown that Al substitution by Sc allows for an increase of the piezoelectric response.
We prepared polycrystalline (001)-textured Al
0.88
Sc
0.12
N thin lms by reactive, pulsed, direct current
magnetron sputtering to measure all relevant properties for TFABR resonators. The target was a 200 mm
diameter, 6 mm thick plate of an Al
0.9
Sc
0.1
alloy of 99.9% purity and exact composition Al/Sc of 89.76
at. %/10.23 at. %. Selected area electron diraction calibrated with the XRD (002) peak yielded a and c
lattice parameters of 3.11 and 5.01
A, respectively. The c/a ratio decreased to 1.575 from 1.601 of pure

AlN. The unit cell volume increased by 5%. Energy dispersive analysis of x-ray emission in the TEM
revealed that 12 at. % of Al atoms were substituted by Sc, indicating a higher sputter or transfer yield for
Sc. The microstructure of the lms as investigated by means of TEM is very close to the known picture
of ber-type T-zone growth of good AlN thin lms for TFBARs. The clamped piezoelectric coecient
d
33,f
as measured by double side interferometry increases to 7.7 to 8.0 pm/V. TFBAR resonators with
fundamental resonance at 2.2 GHz have been fabricated and characterized. The sound velocity in AlScN
was derived by means of 2d nite element modeling of the layer stack, allowing for discrimination of
loading eects by the electrodes. The value of 10300 m/s is clearly lower than in pure AlN(11000 m/s).
A parasitic resistance was taken into consideration through application of an equivalent circuit model.
As a result of these procedures we obtained k2 to 11 % and Q factor of 270 for the complete resonator,
furthermore a dielectric constant of 12, and a dielectric loss tangent of 0.5% (both @2.2 GHz). The
stiness constants c
D
33
and c
E
33
were derived as 345 and 320 GPa. The resonance frequency temperature
drift of 26.1 ppm/K was found to be about the same as for pure AlN. The evolution of piezoelectric
constant e
33
, the dielectric constant, and the stiness constant c
E
33
were found to be close to the values
predicted by ab-inito calculations.
16 2
nd
FBAR Filters for Space Application Based on LiNbO
3
Membrane
T. Baron
1
, M. Chatras
2
, S. Ballandras
1
1
FEMTO-ST UMR 6174 CNRS-UFC-ENSMM-UTBM, ENSMM, 26 Chemin de lEpitaphe, 25030
Besan con Cedex
2
Xlim, UMR 6172 CNRS-Universit e de Limoges, Limoges, France
Film bulk acoustic resonator (FBAR) usually use for lter application, can be used to address
aerospace lter application which need large band. Then, it needs to use piezoelectric material with
high electromechanical coupling coecient. So we use LiNbO
3
cut YXl/36 which have coupling coef-
cient for longitudinal mode of 37.5%.
Conception of this kind of large band lter is based on ladder architecture with three FBAR res-
onators. Firstly, we compute thickness of LiNbO
3
with our own software to achieve frequency required
for elementary resonator. Secondly, we compute and optimise the ladder lter. The ladder lter shows a
widthband of 22% at 300 MHz.
Conception of such devices needs to have membrane of LiNbO
3
with bottom and top electrode. To
achieve this structure, we based our process fabrication on gold bonding silicon and LiNbO
3
wafer and
lapping/polishing step of LiNbO
3
wafer, as described previously last year [1,2]. Contrary to previous
works, we add dierent steps of process before the bonding step to structure the bot-tom electrode
on titanium and membrane. The bonding step is achieve with deep structured silicon wafer, bottom
electrode on LiNbO
3
and structured gold in both wafer. We achieve a membrane on LiNbO
3
of 11 m
as showed in Fig. 1.
Fig. 1: Resonator with 11 m thickness of LiNbO
3
.
Electrical characterization shows lter behaviour of FBAR devices. Packaging of these devices al-
lows us to test power, thermal behaviour.
[1] T. Baron et al., BAW pressure sensor on LiNbO
3
membrane lapping EFTF April 2010, Noordwijk.
[2] T. Baron et al., Temperature compensated Radio-Frequency Harmonic Bulk Acoustic Resonators Pressure
Sensors, IUS October 2010, San Diego.
2
nd
Lead Free Laser Deposited Thin Films of
0.5(Ba
0.7
Ca
0.3
TiO
3
)-0.5(Ba(Zr
0.2
Ti
0.8
)O
3
)
Andr e Piorra
1
, Viktor Hrkac
1
, Lorenz Kienle
1
and Eckhard Quandt
1
1
Institute for Material Science, Faculty of Engineering, University Kiel, Germany
The materials of choice for piezoelectric applications and so far best investigated piezoelectric ma-
terials are bulk or thin lm ceramics based on lead zirconate titanate (PZT). However, there is an in-
creasing and strong interest in lead-free ferroelectric materials due to the toxicity of lead. A promis-
ing composition with piezoelectric properties comparable to PZT were found in 0.5(Ba
0.7
Ca
0.3
TiO
3
)-
0.5(Ba(Zr
0.2
Ti
0.8
)O
3
) (BCZT).
In this work ferroelectric lead-free BCZT thin lms of this composition were successfully de-
posited by pulsed laser deposition (PLD) on Pt/TiO
2
/SiO
2
/Si substrates using a ceramic BCZT target
prepared by conventional solid state reaction. The target material itself showed a piezoelectric coef-
cient d
33
=600 pm/V. The (111) textured up to 1800 nm thick lms exhibited a clamped piezoelectric
response up to 90 pm/V and a dielectric coecient of
r
= 2000 at room temperature and are among the
highest reported for lead-free piezoelectric thin lms. In this presentation, the piezo- and ferroelectric
properties of BCZT thin lms will be discussed in the framework of PLD deposition parameters, the
inuence of the used substrates and its resulting microstructure.
Funding via the DFG Collaborative Research Center SFB 855 Magnetoelectric CompositesFuture
Biomagnetic Interfaces is gratefully acknowledged.
18 2
nd
Microcontact Printing of PZT Films for MEMS
Aaron Welsh
1
, Michael Hickner
1
and Susan Trolier-McKinstry
1
1
Department of Materials Science and Engineering, The Pennsylvania State University
The ability to pattern piezoelectric thin lms without damage is crucial for the development of
microelectromechanical systems (MEMS). Many patterning techniques change the crystallinity or sto-
ichiometry, which degrades the dielectric and piezoelectric properties of the material, with potential
long-term consequences in reliability. This research is focused on shifting the paradigm away from
subtractive patterning techniques by exploring direct patterning of complex oxides through microcon-
tact printing. This process utilizes an elastomeric stamp to transfer a chemical solution precursor of a
piezoelectric material directly onto a substrate in a desired pattern. Subsequent heat treatment is used to
crystallize the material.
One key factor that governs the quality of the patterned shape is the wetting of the PbZr
0.52
Ti
0.48
O
3
(PZT) solution inked onto the surface of the elastomeric stamp. The most commonly used stamp ma-
terial for microcontact printing is polydimethylsiloxane (PDMS). This material has excellent mechanical
properties for this application. However PDMS has a hydrophobic surface, while the 2-methoxyethanol
(2-MOE) based PZT solution is a polar solvent. Therefore poor wetting between the solution and the
stamp leads to poor pattern transfer. Two routes are being explored to improve this. The rst is subject-
ing the PDMS stamps to an oxygen plasma ashing treatment which converts the surface of the stamp to
a temporary hydrophilic surface. The second is to use a polyurethane (PU) composite stamp that has an
inherently hydrophilic surface.
It was found that oxygen plasma ashing the surface of the PDMS stamps leads to well dened pattern
transfer of a single 125 nm layer of PZT solution. Similarly, PU stamps enable both excellent pattern
transfer and multiple printing cycles without degradation in denition of the features. Lateral feature
sizes of the patterned PZT varied from 500 m to 5 m. On crystallization, the patterned features formed
perovskite PZT without deleterious second phases. The patterned features have comparable electrical
properties to those of continuous PZT lms of similar thicknesses, with permittivities of >1000 for
thicknesses above 400 nm. The hysteresis loops are well formed, without pinching of the minor loop.
The piezoelectric response of the patterned features produced an e
31,f
of 5 to 7 C/m
2
. This indicates
that the microcontact printing process does not adversely aect the PZT crystallization.
Part II
Ttrsux. 6, Srrrrmara
Posrras
2
nd
HBAR and Their Applications
T. Baron
1
, E. Lebrasseur
1
, G. Martin
1
, B. Francois
1
, V. Petrini
1
, S. Ballandras
1
1
FEMTO-ST UMR 6174 CNRS-UFC-ENSMM-UTBM, ENSMM, 26 Chemin de lEpitaphe, 25030
Besan con Cedex
High-overtone Bulk Acoustic Resonators (HBAR) have received a strong interest for many years.
Various developments have been particularly achieved using Quartz and AlN materials. With the devel-
opments of new materials which present higher coupling electromechanical coecient, new applications
can be address. The fabrication of the proposed HBAR is based on bonding and lapping of two wafers.
Thin piezoelectric lm presentes strong coupling coecient, as described previously [1,2]. This fabrica-
tion method allows us to choose material for piezoelectric layer and substrat layer to address dierents
applications.
For exemple, one possibility is to control the Temperature Coecient of Frequency (TCF) of HBAR.
The famous Campbell & Jones method [3] has been used here for predicting the TCF of any mode
of a given HBAR and hence to determine congurations of material for which this parameter can be
magnied or minimized. By this way, we can address applications which need intrinsic temperature
compensation or on the contrary maximum sensibility of temperature.
2
nd

HBAR and their applications

T. Baron
1
, E. Lebrasseur
1
, G. Martin
1
, B. Franois
1
, V. Petrini
1
, S. Ballandras
1

1
FEMTO-ST UMR 6174 CNRS-UFC-ENSMM-UTBM
ENSMM, 26 Chemin de l'Epitaphe, 25030 Besanon Cedex

High-overtone Bulk Acoustic Resonators (HBAR) have received a strong interest for many years. Various
developments have been particularly achieved using Quartz and AlN materials. With the developments of
new materials which present higher coupling electromechanical coefficient, new applications can be address.
The fabrication of the proposed HBAR is based on bonding and lapping of two wafers. Thin piezoelectric
film presentes strong coupling
coefficient, as described previously
1,2
.
This fabrication method allows us to
choose material for piezoelectric layer
and substrat layer to address differents
applications.
For exemple, one possibility is to
control the Temperature Coefficient of
Frequency (TCF) of HBAR. The
famous Campbell&Jones method
3
has
been used here for predicting the TCF
of any mode of a given HBAR and
hence to determine configurations of
material for which this parameter can be
magnified or minimized. By this way,
we can address applications which need
intrinsic temperature compensation or
on the contrary maximum sensibility of
temperature.
The possibility to combine various
materials and to include manufacturing
steps before and after bonding and
lapping process, allow us to target
various applications such as oscillator
4
, pressure sensor
1
, temperature sensor, filter, and so on.
1
T. Baron et al., BAW pressure sensor on LiNbO3 membrane lapping Proc.of the IEEE EFTF April 2010
2
T. Baron et al., Temperature compensated radio-frequency harmonic bulk acoustic resonators, Proc.of the
IEEE IFCS, pp. 652 655, 2010
Fig. 1: Experimental measurements of a mode of a HBAR
built on (YXl)/163 LiNbO
3
on (YXlt)/34/90 Quartz
located in the ISM band
Fig. 1: Experimental measurements of a mode of a HBAR built on (YXl)/163
LiNbO
3
on (YXlt)/34
/90
Quartz
located in the ISM band.
The possibility to combine various materials and to include manufacturing steps before and after
bonding and lapping process, allow us to target various applications such as oscillator [4], pressure sen-
sor [1], temperature sensor, lter, and so on.
[1] T. Baron et al., BAW pressure sensor on LiNbO
3
membrane lapping, Proc.of the IEEE EFTF April 2010.
[2] T. Baron et al., Temperature compensated radio-frequency harmonic bulk acoustic resonators, Proc.of the
IEEE IFCS, pp. 652-655, 2010.
[3] J.J. Campbell, W.R. Jones, A method for estimating crystals cuts and propagation direction for excitation of
piezoelectric surface waves, IEEE Trans. On Sonics and Ultrasonics, Vol. 15, pp. 209-217, 1968.
[4] T. Baron et al., RF oscillators stabilized by temperature compensated HBARs based on LiNbO
3
/Quartz
combination, Proc.of the IEEE IFCS-EFTF, 2011.
22 2
nd
Eective Piezoelectric Coecients of PZT Thin Films for Energy
Harvesting with Interdigitated Electrodes
Nachiappan Chidambaram
1
, Andrea Mazzalai
1
, Paul Muralt
1
1
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) (gure 1 (a)) thin lms
play an increasingly important role for two reasons: rst, such a conguration generates higher voltages
than parallel plate capacitor type electrode (PPE) structures, and second, the application of an electric
eld leads to a compressive stress component, contrary to PPE structure, which results in tensile stress.
Ceramics tend to crack at relatively moderate tensile stresses and this means that with IDEs one can
decrease the crack risk. For these reasons, IDEs are ideal for energy harvesting of vibration energy,
as well as for actuators. Systematic investigations of PZT lms with IDE systems are still missing to
date. In this work we present results on the evaluation of the in-plane piezoelectric coecients with
IDE systems. Idealized eective coecients e
IDE
and h
IDE
are derived, showing its composite nature
with about 1/3
rd
contribution of the transverse eect, and about 2/3
rd
contribution of the longitudinal
eect in case of a PZT lm deposited on a (100)-oriented silicon wafer with the in-plane electric eld
along one of the 011 directions. Randomly oriented, 1 m thick PZT 53/47 lm deposited by a sol-
gel technique (gure 1 (b)), were evaluated and yielded an eective coecient, e
IDE
of 15 C/m
2
. We
propose a measurable gure of merit (FOM) for thin lm energy harvester structures as the product
between eective e and h coecient representing twice the electrical energy density stored in the
piezoelectric lm per unit strain deformation. Assuming homogeneous elds between the ngers, and
neglecting the contribution from below the electrode ngers, the FOM for IDE structures is derived to
be twice as large as for PPE structures for PZT-5H properties. The experiments yielded a maximal FOM
of the IDE structures of 7.5109 J/m
3
.
EffectivepiezoelectriccoefficientsofPZTthinfilmsforenergyharvestingwith
interdigitatedelectrodes
NachiappanChidambaram
,AndreaMazzalai
&PaulMuralt
LaboratoiredeCramique
EcolePolytechniqueFdraledeLausanne,EPFL
Lausanne,Switzerland.
August24,2011
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) (figure 1 (a)) thin films play
an increasingly important role for two reasons: first, such a configuration generates higher voltages
than parallel plate capacitor type electrode (PPE) structures, and second, the application of an
electric field leads to a compressive stress component, contrary to PPE structure, which results in
tensilestress.Ceramicstendtocrackatrelativelymoderatetensilestressesandthismeansthatwith
IDEs one can decrease the crack risk. For these reasons, IDEs are ideal for energy harvesting of
vibrationenergy,aswellasforactuators.SystematicinvestigationsofPZTfilmswithIDEsystemsare
still missing to date. In this work we present results on the evaluation of the inplane piezoelectric
coefficients with IDE systems. Idealized effective coefficients e
IDE
and h
IDE
are derived, showing its
compositenaturewithabout1/3
rd
contributionofthetransverseeffect,andabout2/3
rd
contribution
ofthelongitudinaleffectincaseofaPZTfilmdepositedona(100)orientedsiliconwaferwiththein
planeelectricfieldalongoneofthe<011>directions.Randomlyoriented,1mthickPZT53/47film
deposited by a solgel technique (figure 1 (b)), were evaluated and yielded an effective coefficient,
e
IDE
of 15 C/m
2
. We propose a measurable figure of merit (FOM) for thin film energy harvester
structures as the product between effective e and h coefficient representing twice the electrical
energy density stored in the piezoelectric film per unit strain deformation. Assuming homogeneous
fields between the fingers, and neglecting the contribution from below the electrode fingers, the
FOMforIDEstructuresisderivedtobetwiceaslargeasforPPEstructuresforPZT5Hproperties.The
experimentsyieldedamaximalFOMoftheIDEstructuresof7.5x10
9
J/m
3
.
Figure1:(a)schematicillustrationPZTfilmwithIDE,showingthepolarizationpatternandcharge
collectedintheIDE(+q),(b)showstheSEMcrosssectionand(c)showstheopticaltopviewofIDE
pattern
a
c b
Figure 1: (a) schematic illustration PZT lm with IDE, showing the polarization pattern and charge collected in
the IDE (+q), (b) shows the SEM cross section and (c) shows the optical top view of IDE pattern.
2
nd
Reactive Magnetron Sputtering of Ultrathin Piezoelectric Aluminum
Nitride Films
Valeriy Felmetsger
1
, Pavel Laptev
2
and Roger Graham
3
1
2
Innovative Micro Technology
3
NanoTEM Analytics Incorporated, USA
One of todays challenges is to develop electroacoustic devices operating at higher frequencies. As
the resonance frequency of the resonator is determined by the thickness of the AlN layer, there is es-
sential interest of using ultrathin 100-200 nm lms to extend the current FBAR technology from 1-2 to
10-20 GHz range. 100-nm and thinner AlN lms with precisely controllable in-plain stress as well as
stress gradient through the lm thickness are required for a new class of vertically deecting piezoelec-
tric nanoelectromechanical (P-NEM) actuators recently implemented for low power logic applications.
However, it is challenging to deposit such thin lms with acceptable piezoelectric coecients due to
their drastically downward crystallinity compared to 500-2000 nm thick lms currently employed in
mass production.
In this study, technological solutions for reactive magnetron sputtering of higly textured nanoscale
AlN lms (having thicknesses as low as 200 down to 25 nm) have been proposed, their microstructure,
crystal orientation, and features of stress control have been investigated.
To promote the nucleation of small size grains preferably oriented by nitrogen basal plain on top, a
two-step reactive sputtering process by an ac (40 kHz) powered S-gun magnetron was employed. In the
rst stage, a higher substrate temperature (400-450
C) and a higher nitrogen concentration in Ar-N2 gas

mixture are used during growth of the rst 20 nm thick lm. In the second stage, the remaining lm is
deposited at an ambient temperature of about 300
C, while the N2 ux is reduced to the value enabling

the magnetron discharge to remain in a poison mode but at the work point located closer to a transition
zone between a poison and a metallic mode on the hysteresis curve. Regulation of the ux of charged
species, substrate temperature, and gas content during deposition enabled formation of the lms with
low and controllable stress gradient as well as in-plane stress. The two-step AlN processing combined
with the capability to deposit smooth and highly textured Mo bottom electrodes has demonstrated high
eciency in producing very thin piezoelectric AlN lms exhibiting superior crystallinity with FWHM
from 1.8
(200 nm) to 3.1
(25 nm) on Mo electrodes.

HRTEM results have conrmed that the 25-100 nm thick lms have a ne columnar texture and a
continuous lattice microstructure within a single grain from interface with the Mo layer through to the
AlN surface. Although the grains were found slightly rotated relative to one another about the c-axis,
the (0001)-type planes parallel to the interface with the Mo substrate were observed in all samples,
conrming the presence of a strong orientation even in the 25 nm thick lm.
24 2
nd
Inuence of Temperature and O
2
Flow Rate on the Structure and
Ferroelectric Properties of PZT Films Deposited by RF Magnetron
Sputtering
Yun Sung Kang
1
, Sang Jin Kim
1
, Seung Hun Han
1
, Min Kyu Choi
1
, Sung Min Cho
2
and Jung Won
Lee
1
1
AMD Lab. Samsung Electro-Mechanics,314 Maetan-Dong, Suwon 443-743, Korea
2
Micro Fab. Samsung Electro-Mechanics,314 Maetan-Dong, Suwon 443-743, Korea
Pb(Zr,Ti)O
3
(PZT)lms have attracted considerable attention for potential micro-electronics and
electro-mechanical applications due to their excellent ferroelectric and piezoelectric properties. PZT
lms in thickness range of 2-2.5 mm were deposited on Pt/TiO
x
/SiO
2
/Si multilayered substrates by radio
frequency magnetron sputtering. The inuence of deposition temperature (560-620
C) and O
2
ow rate
(0.5-2 sccm) on the structural, electrical, ferroelectric and piezoelectric properties of the PZT lms was
systematically evaluated. According to this study, the deposition temperature has a strong inuence on
the evolution and texture of the ferroelectric perovskite phase and microstructure of the lms.
2
nd
Inuences of Titanium Underlayer on (002) Oriented Aluminium Nitride
Nathan Jackson
1
, Robert OLeary
1
, Rosemary OKeee
1
, Mary White
1
, Mike ONeill
2
, Finbarr
Waldron
1
and Alan Mathewson
1
1
Tyndall National Institute, University College Cork, Ireland
2
Analog Devices Inc., Ireland
Recently, aluminium nitride (AlN) has become a highly researched piezoelectric material because of
its unique properties. Piezoelectric AlN lms have been used as resonators, actuators, transducers, and
energy harvesting devices. AlN is CMOS compatible, which makes it easier to integrate into an IC chip
design. Moreover, it is not a ferroelectric material, so poling is not required to obtain a piezoelectric
eect. However, the crystal orientation of the material is critical in order to optimise the piezoelectric
properties. AlN has been deposited using various methods and on numerous materials. AlN deposited
on metals such as Pt, Ti, and Mo have shown the highest orientation of (002) c-axis AlN lms.
The authors have investigated the inuences of using Ti and various deposition parameters on the
(002) crystal orientation of AlN. Various DC sputtered Ti and AlN lms were investigated using AFM,
SEM, and XRD in order to determine the aects of the underlying layers on the (002) orientation of
AlN. Ti was deposited onto Si and Si/SiO
2
substrates, followed by a DC sputtered AlN lm. Variations
included, Ti thickness, AlN thickness, continous deposition of AlN or multiple breaks, and with or with-
out a SiO
2
isolation layer. Full width half maximum (FWHM) values obtained from the XRD rocking
curve of both the Ti and AlN layers were used to determine the inuences of the varying parameters on
the (002) AlN lms.
The results show that all of the varied parameters had a signicant aect on the RMS surface rough-
ness. The thinner lms along with multiple depositions of AlN and no oxide gave the lowest surface
roughness values. SEM cross section images show good columnar c-axis (002) oriention of the AlN
lm. The FWHM results of the (002) AlN lm show a strong correlation with quality of the (002) Ti
oriented lm. The highest quality lm had a FWHM of 1.5
(AlN) and 1.8
(Ti).
In conclusion, optimising the quality of the underlying layers is critical in order to obtain the highest
quality (002) oriented AlN lm.
26 2
nd
Interdigitated Electrodes Based Cantilevers for Piezoelectric Energy
Harvesting
A. Mazzalai
1
, N. Chidambaram
1
, P. Muralt
1
1
We report on conception, simulation, fabrication, and characterization of PZT thin lm structures
for piezoelectric vibration energy harvesting (EH). We investigated specically interdigitated electrode
congurations (IDE), which in theory, allow for a better exploitation of the capabilities of lead zirconate
titanate (PZT) as an active material in terms of output voltage and output power. The overall eciency
of a MEMS energy harvester is analyzed and also compared to versions with parallel plate structures.
The IDE arrangement decouples the electrode gap from the thin lm thickness, allowing to reduce
the capacitance of the active layer and therefore to increase the output voltage, which is very important
for any diode-based rectication and charge pumping circuit. The product of the eective piezoelectric
coecients e
eff
and h
eff
constitutes an easy to measure relevant gure of merit for thin lm based EH
structures. From the constitutive equations of piezoelectricity we conclude that IDE harvesters can also
carry about twice the energy density with respect to parallel plate electrodes (PPE) devices with the
same active volume.
The results of nite element modeling (FEM) investigations for both IDE and PPE are presented and
compared with simplied analytical calculations. We studied the harvesting eciency as a function of
the power input in the form of elastic beam bending. Due to its higher coupling coecient, PZT thin
lm based systems with IDEs can harvest a given amount of stored elastic energy much faster than PZT
PPE and AlN PPE structures. Based on these results, an EH design for broadband devices applications
is proposed and discussed also in its critical aspects of stress compensation and capacitive coupling.
The micro fabrication route of the PZT laminated beams is presented. Deposition of PZT thin lms
was investigated with both magnetron sputtering and chemical solution routes. Silicon cantilevers coated
with 2 m thick PZT 53/47 thin lms with mainly (100)-orientation were fabricated and characterized.
2
nd
Local Polarity Control of (001)AlN Thin Films
E. Milyutin
1
, S. Harada
1
, D. Martin
2
, J. F. Carlin
2
, N. Grandjean
2
, V. Savu
3
, O. Vaszques-Mena
3
, J.
Brugger
3
and P. Muralt
1
1
Ceramics Laboratory, Ecole Polytechnique F ed erale de Lausanne EPFL, Lausanne, Switzerland
2
Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique
F ed erale de Lausanne EPFL, Lausanne, Switzerland
3
Microsystems Laboratory, Ecole Polytechnique F ed erale de Lausanne EPFL, Lausanne, Switzerland
We report on the ability to control the polarity of sputter deposited AlN(001) thin lms using seed
layers. Reactive sputter deposition leads to N-polarity on any substrate hitherto applied, i.e. Si(111),
sapphire, SiO
2
, polycrystalline metals such as Pt(111), Mo(110), W(110), etc. A site-controlled polarity
allows for an ecient excitation of shear modes of surface, bulk, and Lamb waves by interdigitated
electrodes. We were able to introduce the Al-polarity through a MOCVD seed layer. By subsequently
patterning the substrate surface it was possible to dene the desired lm polarity of sputter deposited
AlN lm. Polarities were determined by selective etching with KOH solutions and by piezoresponse
force microscopy (PFM).
28 2
nd
Hyper Frequency Properties of 3 Inches-frozen Capacitive MEMS with
PZT Thin Films Processed by Sol-gel
M. Pham Thi
1
, P. Martins
1
, A.Leuliet
1
, M. Pate
1
and A. Ziaei
1
1
Thales Research Technology France, 1 Avenue A. Fresnel, 91676 Palaiseau Cedex France
e-mail: mai.phamthi@thalesgroup.com
RF-MEMS have a crucial role to play in future wireless systems through the development of l-
ters, high-Q inductors, high-density capacitors and low loss switches to enable novel and improved RF
transceiver front-ends. Compared with FETs or PIN diodes, RF MEMS present lower insertion loss in
the on state and better isolation in the o state. Most of capacitive RF MEMS use Si
3
N4 as dielectric
layer. Its low dielectric constant (7@few GHz) limits the performance of device at low frequency.
PZT exhibiting high-k dielectrics constant were investigated in capacitive MEMS to lower the
switching bandwidth up to 2 GHz. A frozen capacitive MEMS switch, that simulates a MEMS in it
on state consists of coplanar lines shunted by a dielectric patch. Gold electrodes were deposited by
evaporation and PZT or derived PZT thin lms were obtained by spin coating onto 3 inch Silicon sub-
strates. Crystallization of PZT thin lm was optimized about 500
C in order to limit the diusion of Au

electrode. At this temperature pure perovskite thin lms exhibiting a dielectric constant of 500-1000@
2-7 GHz were observed. The increase of dielectric constant with thin lm thickness is consistent with
data in the literature and reveals the presence of dead layer at electrode/PZT interface thin lm. The
variation of the dielectric constant versus frequency, measured for three capacitance dimensions exhibits
a circuit resonance from 4 GHz to 9 GHz for the value of capacitance from 82 pF to 22 pF. These res-
onances perturb dielectric constant determination and imply the right choice of capacitance dimension
versus frequency. Inuence of bias on dielectric properties were measured in order to evaluate PZT
behaviour during switching.
HF measurements were done from 1 GHz to 20 GHz. The reection coecients are high, between
0.5 and 0.6 dB for most lines. At 10 GHz all the shunted lines have high attenuation, better than
39 dB. These data are promising and implementation of PZT and derived PZT thin lm in MEMS
process is in progress.
2
nd
Active Damping with A Piezoelectric MEMS Device
Thierry Verdot
1
, Paul Muralt
2
and Manuel Collet
1
1
Femto-st institute, D epartement de M ecanique appliqu ee, France
2
Ecole Polytechnique F ed erale de Lausanne (EPFL), Laboratoire de C eramique (LC), Switzerland
Active stabilization strategies oer interesting prospects for the protection of embedded MEMS de-
vices against accelerations generated by their vibrating support. Moreover, downscaling operated in
microtechnology brings substantial benets. First, the reduced amount of mass to control lowers dras-
tically the energy required for the active stabilization. Then, the large variety of coupling mechanisms,
mature in microengineering, oers facilities for the integration of actuators and sensors required for con-
trol implementation. The device presented at the 2
nd
International Workshop on piezoelectric MEMS is
a piezoelectric Micro Active Suspension prototype dedicated to the application of a stabilization strategy
called Integral estimated-Force Feedback. Basically, it is a mechanical suspension etched in a silicon-
on-insulator wafer and equipped with an actuator/sensor pair integrated via a Pb(Zr
0.53
,Ti
0.47
)O
3
thin
lm deposited by gradient free sol-gel route. Obtained ferroelectric transducers exhibit high transverse
piezoelectric coecient in the linear domain restricted to 2 V. Their remarkable authority on suspen-
sion dynamic combined to a weak electrical cross-talking enables the implementation of the controller
by using a restricted number of electronic analog low-voltage components. The transfer functions of
the closed-loop system, recorded during experimental test conducted on a vibrating table, emphazise
sky-hook damping actively introduced that stabilizes suspension dynamic while preserving isolation
performances above its cuto frequency.
30 2
nd
Modelling of Piezoelectric Micromachined Ultrasound Transducers
(pMUT) for Medical Use
Andreas Vogl
1
and Dag T. Wang
1
1
1SINTEF ICT, Department of Microsystems and Nanotechnology, Oslo, Norway
PiezoMEMS transducers consist often of multilayered thin-lm structures which are dicult to
model with nite element modelling (FEM) tools due to high aspect ratio of the geometry. Therefore, a
set of analytical models for dierent variables in the transfer function of the pMUT has been developed
as a checking point for the multiphysics FEM simulations.
The transfer function for the frequency f of the circular, membrane based ultrasound transducer in
bending mode can be written as the quotient of amplitudes of average deection and applied voltage to
the structure:
H( f )
y
0
V
0
=
kM(V
0
)R
2
in
ln
R
m
R
in
2D
m
[k + j2 f Z( f ) m(2 f )
2
]
.
Here we use the spring constant k, the piezoelectric bending moment due to the voltage M(V), the radii
R
in
(inner radius of the actuation electrode) and R
m
(membrane radius), the exural rigidity D
m
, the
acoustic impedance Z( f ) (dened as in [1]) and the membrane eective mass m.
The results of the analytical modelling and a FEM model in COMSOL multiphysics regarding the
rst eigenfrequency and centre displacement for a pMUT in water were compared and showed only
minor deviations. A combination of both modelling types has been used for the modelling of pMUTS
which are currently under manufacturing at SINTEF. This approach allows for a quick exploration of the
design space with the analytical models for this multiphyscis problem and providing a check point for
the time consuming optimal meshing of the high-aspect ration geometries for FEM. At the same time
important design parameters can also be identied. The multiphysics FEM simulations give additional
qualitative and quantitave information e.g. higher order eigenmodes close to the rst one.
[1] Kinsler, L.E., Fundamentals of acoustics. 4th ed. 2000, New York ; Chichester: Wiley. xii, 548 p.
[2] Muralt P., Kholkin M., Kohli M., Maeder T, 1996, Piezoelectric actuation of PZT thin-lm diaphragms at static
and resonant conditions, Sensors and Actuators A53, 398-404
2
nd
Piezoelectric MEMS Fabrication Integrating Thermally and
Mechanically Incompatible Materials
P.B. Kirby
1
and R.V.Wright
1
1
Craneld University,UK
In common with a number of other technologically important thin lm materials high temperatures
are required for the growth of high quality piezoelectric lms either for lm deposition itself or during
a subsequent anneal which can make them dicult to integrate with conventional e.g. CMOS devices.
Also with the advent of plastic electronics mechanical constraints are now becoming important: the me-
chanical strain in exible circuits for example can reach 3% which is well above the breaking strain
of many inorganic piezoelectric materials. It is possible with some materials to overcome thermal in-
compatibilities by reducing lm growth temperature a good example of which is sol-gel deposited PZT,
which can be grown at temperatures as low as 500
C, but an attractive option which has recently been

developed is transfer bonding in which the piezoelectric layer is deposited on a separate wafer, then
bonded to the low temperature substrate and nally removed from its original substrate by mechanical
grinding and/or chemical etching or if the substrate is uv transparent by excimer laser ablation. Strate-
gies to deal with mechanical incompatibility include use of a temporary rigid backing to enable planar
processing and strain relief measures such as buckled interconnecting beams and strain isolating layers.
In the present work some of these approaches have been applied to a range of piezoelectric devices to
overcome thermal and mechanical constraints. Thin lm PZT actuated DC contact RF MEMS switches
have been fabricated using two types of transfer bonding technique one in which stud bonding is com-
bined with laser ablation for selective device transfer and another which employs adhesive bonding for
full wafer device transfer. Good switching performance has been achieved with both. A simple process
for the transfer of thin lm PZT structures onto polydimethylsiloxane (PDMS) for energy harvesting ap-
plications has also been demonstrated in which a Si substrate containing the structures is pressed against
a separate PDMS coated substrate and then etched away by deep reactive ion etching. The transferred
structures appear well bonded but some reduction in their ferroelectric, and hence piezoelectric, proper-
ties following transfer has been observed. ZnO based thin lm bulk acoustic resonators (FBARs) have
been fabricated directly onto a exible liquid crystal polymer by pre-bonding the exible substrate to
a rigid backing wafer to enable conventional planar processing and lowering the ZnO growth tempera-
ture to 200
C. A high eective electromechanical coupling constant (k

2
) has been achieved 6.7% but
the low growth temperature and consequent non-optimum grain structure is believed to have led to the
limited series and parallel Q values that are observed (126 and 78 respectively).
Part III
Wruxrsux. 7, Srrrrmara
Oaxi rarsrxrxrroxs
2
nd
All-oxide PiezoMEMS Devices by Pulsed Laser Deposition: Properties of
Clamped Epitaxial PZT Thin Films
Guus Rijnders
1
1
MESA+ Institute for Nanotechnology, University of Twente, POBox 217,7500AE, Enschede,
Netherlands
Ferroelectric oxides, such as Pb(Zr,Ti)O
3
(PZT), are very useful for electronic and photonic devices,
as well as piezomechanical actuators and sensors. The ferro- and piezoelectric properties are strongly
related to the crystal orientation as well as the strain state of the PZT layer. Successful integration of
these devices into silicon technology is therefore not only dependent on the ability of epitaxial growth
on silicon substrates, but also the control of the crystallographic orientation and the residual strain state
of the deposited PZT thin lm.
A study will be presented on the eects of the residual strain in PZT thin lms on the ferroelectric
and piezoelectric properties. Epitaxial (001)-oriented PZT thin lm capacitors are sandwiched between
SrRuO
3
electrodes. The thin lm stacks are grown on dierent substrate-buer-layer combinations
by pulsed laser deposition. All the PZT lms show ferroelectric behavior that is consistent with the
single domain ferroelectric r-phase. Compressive or tensile stress caused by the dierence in thermal
expansion of the PZT lm and substrate inuences the ferroelectric and piezoelectric properties. Their
dependences on this mist strain are in good correspondence with theoretical predictions. We conclude
that clamped (001) oriented single domain Pb(Zr
0.52
Ti
0.48
)O
3
thin lms strained by the substrate always
show rotation of the polarization vector.
In this contribution, I will furthermore highlight the recent progress on the fabrication of all-oxide
piezo-MEMS devices by pulsed laser deposition.
36 2
nd
Introduction of New Manufacturing Technology for Piezo (PZT) MEMS
Production
Janssens, Arjen
1
1
CEO SolMateS, Netherlands
arjen.janssens@solmates.nl
The MEMS market is growing fast of which PiezoMEMS applications are showing high market
potential. Many companies are working on Piezo actuated MEMS, trying to get their application from
development towards production. One of the major challenges in this process is the reliable integration
of the Piezo material (PZT) on the silicon wafer. The deposition of PZT on silicon wafers is not straight-
forward as the optimal material performance; yield and stability are hard to achieve using traditional
deposition technologies. For this reason SolMateS oers the PiezoFlare 1200 to deposit PZT thin lms
on 6" and 8" wafers.
This thin lm platform uses laser deposition to deposit PZT and oxide electrodes in the same reactor.
Due to its modular conguration we have a solution from research till production. The PiezoFlare 1200
is designed to manufacture reliable PZT thin lms. Measurements show high and homogeneous piezo
performance on each wafer, and stable values from wafer to wafer. The PiezoFlare 1200 enables reliable
production capability for PZT thin lm deposition.
After the PZT thin lms (1-3 m) are deposited no poling and RTA is required. Wafer mapping
using DBLI (AixaCCT systems) show uniform d
33
values across the wafer with values of 180 pm/Volt
or higher for a 1mm
2
pad size and 2 m PZT thin lms. From cantilever tip displacement measurements
d
31
values of 120 pm/V and higher are calculated. Furthermore measurements show stable membrane
and cantilever actuation till 10
10
cycles.
2
nd
0.2
Ti
0.8
)O
3
Thin Films on Silicon: Growth
and Physical Properties
S. Gariglio
1
, A. Sambri
1
, P.Janphuang
2
, D. Isarakorn
2
, D. Briand
2
, J.W. Reiner
3
, A. Torres Pardo
4
, O.
St ephan
4
, C.H. Ahn
3
, N.F. de Rooij
2
and J.-M. Triscone
1
1
University of Geneva, Switzerland
2
Ecole Polytechnique F ed erale de Lausanne (EPFL), Switzerland
3
Yale University, USA
4
Universit e Paris-Sud, France
This work discusses the growth and properties of epitaxial ferroelectric layers on silicon for piezo-
electric MEMS devices. Nowadays it is possible to control the growth of epitaxial thin lms of per-
ovskite structure on silicon substrates using a SrTiO
3
layer as a chemical and structural buer. The
integration of this crystalline oxide layer on silicon requires a complex multi-step procedure achieved
by molecular beam epitaxy. The successive bottom electrode SrRuO
3
and ferroelectric Pb(Zr
0.2
Ti
0.8
)O
3
thin lms are grown by reactive magnetron sputtering. We currently master this process on 3 inch silicon
substrates.
The structural analysis performed by transmission electron microscopy and x-ray diraction reveals
a full epitaxial relation between the layers. Polarization-voltage loops, measured at room temperature
on 100100 m
2
Cr/Au top electrodes, reveal a remnant polarization and a coercive eld of about
70 C/cm
2
and 250 kV/cm, respectively. Piezo-force microscopy yields an estimation of the piezoelec-
tric d
33
coecient of 50 pm/V.
As for ferroelectric materials it is well known that the mechanical boundary conditions aect sub-
stantially the ferroelectric properties through the strain-polarization coupling, we have investigated the
eect of the epitaxial strain on the critical temperature of the paraelectric-ferroelectric phase transition.
A. Sambri et al., Appl. Phys. Lett. 98, 012903 (2011).
38 2
nd
Oerlikon PVD Production Solution for in-situ Large Scale Deposition of
PZT Films
Kratzer M.
1
, Kaden D.
2
, Quenzer HJ.
2
, Castaldi L.
1
, Heinz B.
1
, Harada S.
3
, Mazzalai A.
3
and Muralt P.
3
1
Oerlikon Balzers, Liechtenstein
2
Fraunhofer ISIT, Germany
3
EPFL, Switzerland
The direct growth of piezoelectric PZT lms by RF sputtering (PVD) is considered as the deposition
method particularly suitable to satisfy the increasing demand for this material type driven by various
applications like sensors, energy harvesting devices, ink-jet printing heads and other active components.
This is because of the remarkable advantage of the PVD deposition method to grow high quality lms
in a single process step (in-situ) without post annealing.
One prerequisite for the in-situ growth of the correct crystalline perovskite structure is the tight
temperature control of the substrate in the range of 500
C during lm deposition. Challenges arise

because of the required temperature uniformity especially for the large wafer size of 200 mm. Further
on the sputter equipment has to be optimized to enable a deposition process at a high throughput which
is a key factor for minimized cost of ownership for PZT volume production.
The status of the tool development for in-situ deposition of PZT lms by sputtering will be presented.
The hardware capabilities will be shown and their inuence on the PZT lm properties will be discussed.
As a result high quality PZT lms were deposited on 8" wafer showing a considerable piezoelectric
performance with highest piezoelectric coecients d
33,f
of 120 pm/Vand e
31,f
of 13.8 C/m
2
on 200 mm
substrate size.
2
nd
Measurements of Electrical and Electromechanical Characteristics of
Piezoelectric Thin Films and Optimization of Poling
Stephan Tiedke
1
, Roland Kessels
1
, Thorsten Schmitz-Kempen
1
, Gwena el Le Rhun
3
, Dirk Kaden
4
and
Paul Muralt
5
1
aixACCT Systems GmbH, Germany
3
CEA-LETI, France
4
Fraunhofer Institut f ur Siliziumtechnologie, Germany
5
Swiss Federal Institute of Technology EPFL, Switzerland
The rst mass-products of Micro-Electro-Mechanical Systems (MEMS) based on piezoelectric thin
lms have been introduced into the market. A broad range of new applications are currently being
developed e.g. energy harvester for autonomous devices, new ink-jet printer heads, RF-switches and
tilted mirror arrays. With more products under development the need of accurate and standardized
characterization of piezoelectric lms is increasing.
The characterization of the piezoelectric lm properties is essential for device design as well as
device simulation and critical for process qualication. Dierent measurement methods for the investi-
gation of the piezoelectric thin lm properties will be presented.
The rst method presented uses the Double Beam Laser Interferometer (DBLI) to measure the eec-
tive longitudinal (d
33,f
) coecient of piezoelectric thin lms on wafer level up to 8 inch. Resolution and
long-term repeatability were veried by an x-cut quartz sample and 8 inch wafers with AlN thin lms as
a stable reference piezoelectric material.
The second method focuses on thin lm samples on silicon substrates where the electrode layout is
adapted to our 4-point bending setup for measurement of the transversal piezoelectric (e
31,f
) coecient
under well-dened homogeneous mechanical strain. Stress and corresponding strain distributions in
the lm were veried by Finite Element simulations. Repeatability was also veried on AlN thin lm
samples. This combination of setups allows fast and accurate measurements of both coecients on
Pb(Zr,Ti)O
3
(PZT) thin lms.
In the second part of the presentation it will be shown that careful poling of Pb(Zr,Ti)O
3
(PZT) thin
lms under elevated temperature and dierent excitation signals can signicantly increase the piezoelec-
tric coecients. In some cases the e
31,f
coecient could be increased by 50% or more. Optimizations
of the poling condition will be presented and the results will be summarized.
40 2
nd
Direct And Indirect Piezoelectric Characterization of PZT Thin Films for
MEMS Applications
Abergel, J.
1
, Cue, M.
1
, Michaud, H.
1
, Allain, M.
1
, Ricart, T.
1
, Dieppedale, C.
1
, Suhm, A.
1
, Kessels,
R.
2
, Tiedke, S.
2
, Le Rhun, G.
1
, Fanget, S.
1
, Ad, M.
1
and Defa y, E.
1
CEA LETI Minatec Campus, 38054 Grenoble, France
2
AixACCT Systems GmbH Dennewartstr. 25, D-52068 Aachen, Germany
Pb(Zr,Ti)O
3
(PZT) thin lms have been extensively studied during the last 20 years because of their
outstanding ferroelectric, dielectric and piezoelectric properties. However, it appears that there is still a
large discrepancy between the communicated piezoelectric coecients. This is closely related to the fact
that thin lms are clamped to their subtrates. Thus, only eective piezoelectric coecients, which are a
combination of purely piezoelectric coecients and elastic constants, can be extracted. Moreover, thin
lms elastic constants are not well known: that increases the diculty to determine pure piezoelectric
coecients.
In this study, we propose to implement a direct and indirect piezoelectric characterization of PZT
lms in order to provide a clear assessment of the transverse piezoelectric coecients. Those char-
acterizations give the opportunity to eventually determine e
31
, d
31
and the Young modulus of these
PZT thin lms. (100)-oriented sol-gel 2 m-thick Pb(Zr
0.52
,Ti
0.48
)O
3
lms were deposited on 200 mm
SOI wafers. The nal stack was Si substrate/0.5 m-SiO
2
(BOX)/5 m Si (SOI)/0.5 m-SiO2 /0.1 m
Pt/2 m-PZT/0.1 m Ru. Two types of piezoelectric characterizations were performed on these lms.
On one hand, the eective direct transverse coecient e
31,eff
was extracted by using the 4-points bending
method provided by Aixacct [1]. On the other hand, the indirect transverse coecient d
31
was extracted
from measuring the deection with a WYCO interferometer of a processed membrane actuated by the
PZT lm. PZT membranes were released by a back-side etching process. Thanks to the SOI processed
substrates, the cavity length is very well-controlled. That consequently makes these devices particularly
suitable for d
31
measurements. d
31
was tted by using a Finite Element Model (Comsol).
The extracted e
31,eff
value is 15.95 C/m
2
. It is worth noting that e
31,eff
does not require PZTs
Young Modulus E
PZT
to be determined. The extracted d
31
value is 150 pm/V. In this case, E
PZT
plays a
minor role on the mechanical behaviour of the membrane which is mainly inuenced by the 5 m thick
SOI Si layer. Moreover, e
31,eff
, d
31
and the Young modulus E are linked by d
31
=e
31,eff
(1-)/E, where
is the Poisson ratio. By using =0.3, the evaluated E is 74 GPa, which ts with PZT bulk ceramics
values reported in the literature for PZT in morphotropic phase [2]. Therefore, a careful characteriza-
tion of direct and indirect piezoelectric coecients of PZT lms gives consistent data with the typical
following values: e
31,eff
=15.95 C/m
2
, d
31
=150pm/V and E
PZT
=74 GPa.
[1] K. Prume, P. Muralt, F. Calame, T. Schmitz-Kempen, and S. Tiedke, Piezoelectric thin lm: evaluation of
electrical and electromechanical characteristics for MEMS devices, IEEE Trans. Ultrason., Ferroelectr., Freq.
Control, vol. 54, no. 1, pp. 8-14, 2007.
[2] A. K. Singh, S. K. R. Mishra, D. Pandey, S. Yoon, S. Baik, and N. Shin, Origin of high piezoelectric response
of Pb(Zr
x
Ti
1x
)O
3
at the morphotropic phase boundary: Role of elastic instability, Appl. Phys. Lett, vol. 92,
no.2. art. no. 022910, 2008.
2
nd
Spin-Coat Technology of KNN Film Deposition with Oxygen Pressurizing
RTA
Takeshi Kijima
1
, Takekazu Shigenai
1
and Yuji Honda
1
1
Youtec Co.,Ltd. Japan
Recently, KNN ceramics is expected to next generation piezoelectric material as lead-free. However
there are only several reports of the KNN lm deposition by PVD as thin lm. This study reports
a success in the KNN lm deposition by Spin-Coat Technology with the Oxygen Pressurizing RTA.
Spin-Coat technology is suitable for industrial production more than PVD concerning its cost.
We developed an original KNN sol-gel solution and deposition process. High concentration KNN
solution (25 weight %) is a feature of our original sol-gel solution and high pressure oxygen (about
10 atm) during RTA process is a feature of our original deposition process. Combining high pressure
oxygen and high concentration KNN solution provides the highest KNN crystal growth rate without
help of a substrate orientation. We consider that chemical kinetics is applied to the KNN crystal growth.
The KNN crystal growth prvided from an upper surface of an amorphous KNN lm is fastest growth. A
crystallization direction of an ingredient (110) is the strongest like a KNN bulk.
Very thin piezolms are deposited on the KNN lm to cap it and spun it before RTA process. This
cap layer prevents an alkaline metal from evaporating and assists a crystallization of the KNN lm from
the upper surface. Now we have developed that the KNN lm may be crystallized in a (110) direction
of a polarization axis.
2
nd

Spin-Coat Technology of KNN Film Deposition
with Oxygen Pressurizing RTA

Takeshi Kijima, Takekazu Shigenai and Yuji Honda

Youtec Co.,Ltd. Japan

Recently, KNN ceramics is expected to next generation piezoelectric material as lead-free. However there
are only several reports of the KNN film deposition by PVD as thin film. This study reports a success in the
KNN film deposition by Spin-Coat Technology with the Oxygen Pressurizing RTA. Spin-Coat technology is
suitable for industrial production more than PVD concerning its cost.
We developed an original KNN sol-gel solution and deposition process. High concentration KNN solution
(25 weight %) is a feature of our original sol-gel solution and high pressure oxygen (about 10 atm) during
RTA process is a feature of our original deposition process. Combining high pressure oxygen and high
concentration KNN solution provides the highest KNN crystal growth rate without help of a substrate
orientation. We consider that chemical kinetics is applied to the KNN crystal growth. The KNN crystal
growth prvided from an upper surface of an amorphous KNN film is fastest growth. A crystallization
direction of an ingredient (110) is the strongest like a KNN bulk.
Very thin piezofilms are deposited on the KNN film to cap it and spun it before RTA process. This cap layer
prevents an alkaline metal from evaporating and assists a crystallization of the KNN film from the upper
surface. Now we have developed that the KNN film may be crystallized in a (110) direction of a polarization
axis.
Figure.1 shows a cross section of the KNN film. 2um thick KNN film with flat and smooth surface was
obtained. The cap layer was not obtained.
Figure.2 shows XRD of the KNN film. This film has single layer with (110).
Figure.3 shows C-V carve of KNN. 2Pr is 30uC/cm
2
at 100V.

Fig.1 Fig.2 Fig.3

Fig. 1 shows a cross section of the KNN lm. 2 m thick KNN lm with at and smooth surface was
obtained. The cap layer was not obtained.
Fig. 2 shows XRD of the KNN lm. This lm has single layer with (110).
Fig. 3 shows C-V carve of KNN. 2P
r
is 30 C/cm
2
at 100 V.
42 2
nd
Properties of PMN-PT 65/35 thin lm oriented -011 at radio frequency
measured by coplanar waveguide
Kim-Anh Bui-Thi
1,2
, Mai Pham-Thi
1
, Gui Garry
1
, Aude Leuliet
1
, Michel Pate
1
, Paolo Martins
1
,
Afshin Ziaei
1
and Philippe Lecoeur
2
1
Thales Research & Technology, Palaiseau, France
2
Institut dElectronique Fondamentale, Orsay, France
In capacitive MEMS (micro-electro-mechanics systems) applications, the dielectric constant decides
usually the working frequency of the device. Communly used dielectrics like Si3
3
N
4
, SiO
2
, ZrO
2
...
allow good isolation at high frequency (30 GHz). In order to adapt the component for the radar appli-
cations (10 GHz) and telecommunication (500 MHz-3 GHz), one has to increase the capacitace of the
device by replacing these dielectrics by a high-k dielectric or by modifying the capacitance dimensions
and the thin lm thickness. The latters are not very eective since they can increase only a few times the
capacitance while changing the dielectric can increase the capacitance sometimes a factor of 100. That
is the reason why high-k dielectric becomes the best choice to optimize the working frequency.
Well known as a very good material for MEMS actuators and sensors, PMN-PT has been studied
since a long time mainly to optimize its electro-mechanical response. In order to obtain high-k dielectric
for radiofrequency micro-electro-mechanics systems, we have concentrated recently on PMN-PT 65/35
because of its actractive permittivity. A lack of knowledge of this PMN-PT thin lm at radio frequency
leads us to characterize these properties with a coplanar waveguide.
We have succeeded to grow PMN-PT thin lm oriented 011 by Pulsed Laser Deposition on met-
alized silicon substrate. The very small remnant polarization of the PMN-PT oriented 011 is much
more advantageous than the usual 001 and 111 orientation for the functioning of the rapide MEMS
Switch applications. Our coplanar waveguide short-circuit (the coplanar waveguide isolated with a
blocked transversal metal line by a PMN-PT thin lm) shows a good agreement between the simulation
with High Frequency Simulation Software and the RF measurement (the isolation S
12
in both cases is
40 dB around 10 GHz). The simulation considers the variation of the material permittivity in fre-
quency using Debye relaxation model. The RF measurement has been carried on dierent capacitance
dimensions to make sure of the accuracy of the results. The working frequency range of our MEMS
Switch test using PMN-PT is very large: from 500MHz up to 20 GHz. This encouraging result shows
that it is possible to use this material for both applications in radars and telecommunication.
2
nd
Inuence of Solution Synthesis Conditions on Crystallization and
Properties of Functional Oxide Thin Films
Barbara Malic
1,2
, Sebastjan Glinsek
1,2
, Alja Kupec
1
, Brigita Ku znik
1,2
, Elena Tchernychova
1,2
and
Marija Kosec
1
1
Jo zef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
2
Centre of Excellence SPACE.SI, VESOLJE.SI, A sker ceva 12, 1000 Ljubljana, Slovenia
Ceramic functional-oxide thin lms with enhanced functional properties, such as dielectric per-
mittivity, voltage tunability, remanent polarisation, piezoelectric properties, or electrocaloric eect, to
name only a few, have been studied for dierent microelectronic and microelectromechanical applica-
tions, including thin lm capacitors, memories, sensors, actuators, tunable microwave devices or micro
heating/cooling devices.
Thin lm microstructure critically inuences the functional properties. In case of Chemical Solu-
tion Deposition (CSD), the crystallisation and evolution of the lm microstructure depend on, and may
therefore be tailored by the chemistry of the sol, the choice of the substrate, and by the processing
conditions, mainly by the temperatures and times of the individual heat treatment steps - drying, pyrol-
ysis and annealing. For example, the dielectric permittivity and voltage tunability of solution-derived
Ba
0.3
Sr
0.7
TiO
3
(BST) thin lms were almost doubled, namely from 345 and 1.47, to 722 and 1.93, as
the grain size was increased from 40 nm to 80 nm. (B. Malic et al., J. Europ. Ceram. Soc. 27 (2007)
2945.) In solution-derived PbZr
0.3
Ti
0.7
O
3
(PZT) thin lms, the design of microstructure and preferential
orientation of the perovskite phase with consequent changes of dielectric permittivity and ferroelectric
properties could be achieved by the choice of the reagents and the deposition-heating sequence. (B.
Malic et al., Integr. Ferroel., 100 (2008) 285.)
The contribution addresses the design of microstructure of selected ferroelectric complex perovskite
thin lms based on lead-free perovskites: incipient ferroelectric potassium tantalate, potassium tantalate-
niobate, and potassium sodium niobate; which has been, in the bulk ceramic form, extensively studied
as the lead-free piezoelectric, with properties of some modied compositions comparable to those of
lead-based perovskites.
The correlation between the lm microstructure and respective functional properties and the details
of the solution syntheisis of individual material compositons are discussed.
The work was supported by the Slovenian Research Agency (program P2-0105; young researcher
program, contract number: 10000-07-3100068) and by the European Union and Ministry of Higher
Education, Science and Technology of Slovenia.
44 2
nd
Low Temperature Laser Processing of Ferroelectric Thin Films
S. S. N. Bharadwaja
1
, F. Griggio
1
, W. Qu
1
, J. Kulik
1
, T. Clark
1
, H. Beratan
2
and S. Trolier-McKinstry
1
1
Materials Research Institute, The Pennsylvania State University, University Park, PA 16802
2
Bridge Semiconductor Corporation, Pittsburgh, PA 15235
Low thermal budgets for processing of ferroelectric lms are important for nonvolatile memories,
pyroelectric detectors, miniaturized piezoelectric transducers, and embedded dielectrics. Most comple-
mentary metal oxide semiconductor (CMOS) based read-out circuits can withstand processing tempera-
tures less than 450
C; however large thermal budgets (500
C) are required to crystallize ferroelectric

thin lms such as Pb(Zr,Ti)O
3
and BaTiO
3
. Using KrF excimer laser annealing and oxidation, the sub-
strate temperatures can be reduced below 400
C.
In this presentation, three main topics will be discussed:
(i) Crystallization kinetics of Pb(Zr,Ti)O
3
thin lms within the framework of rate dependent Avrami
theory under non-isothermal conditions. The resultant electrical properties of laser annealed lms are
comparable to those of rapid thermally annealed Pb(Zr,Ti)O
3
thin lms.
(ii) Orientation control in laser annealed Pb(Zr,Ti)O
3
52/48 thin lms using a bottom template layer
at substrate temperatures below 400
C. Both {111} and {100} orientations were achieved in 200-

300 nmthick PZT layers on (111) Pt and 001 PbTiO
3
surfaces. The measured average remanent polariza-
tion and coercive elds are 31 C/cm
2
and 86 kV/cm for 001 PZT lms and 23.6 C/cm
2
and 64 kV/cm
for {111} oriented PZT thin lms respectively. The maximum e
31,f
coecients are 9.0 C/m
2
for
{001} and 8.5 C/m
2
for {111} PZT thin lms respectively.
(iii) Oxidation kinetics of 200 nm thick BaTiO
3
thin lms on Ni foils in O
2
/O
3
(90/10) at substrate
temperature below 400
C for base metal capacitor applications. The resultant lms have small signal
dielectric permittivities 1100 with <4% loss values between 0.1-1 kHz. Well-controlled interfaces
between the BaTiO
3
and the Ni foil, without indication of a NiO reaction layer are conrmed from elec-
tron energy loss spectroscopy (EELS) and high resolution transmission electron microscopy (HRTEM)
studies.
2
nd
FP7 piezoVolume - High Volume Piezoelectric Thin Film Production
Process For Microsystems
Tyholdt F
1
, Haavik C.
1
, Mazzalai A.
2
, Tiedke S.
3
, Kessels R.
3
, Kratzer M.
4
, Kaden D.
5
, Schr opfer G.
6
,
Cruau A.
6
, Muer P.
7
, Herrmann R.
7
, Muralt P.
2
1
SINTEF, Norway;
2
EPFL, Switzerland;
3
aixACCT, Germany;
4
Oerlikon Baltzers, Liechenstein;
5
Fraunhofer ISIT, Germany;
6
Coventor, France;
7
Solar-semi, Germany
The main goal of FP7 piezoVolume (20102013) (www.piezovolume.com) is to develop a platform
of integrated processes for production of piezoelectric microsystems. In this platform the processes and
procedures specic to piezoMEMS have been identied i.e.: piezoMEMS modeling and process emula-
tion, piezoMEMS design including design rules, PZT deposition tools for production, in-line piezoelec-
tric thin lm quality monitoring and a standard fabrication process including fab integration procedures.
piezoVolume develops solutions for all the elements in this platform. Even though the current main
bottleneck is the availability of piezoelectric thin lm deposition tools capable of delivering suitable
deposition rate and performance uniformity, the importance of the other piezoMEMS specic elements
should not be forgotted when establishing a piezoMEMS fab. We believe that the availability of a com-
plete process platform will lower the threshold for industry acceptance and be a key tool to realise new
products using piezoMEMS.
The status of the ongoing developments within the separate elements of the process platform will
be presented. Some examples from using the commercial piezoMEMS CAD and process emulation
software from Coventor will be shown. Modelling of the integration of piezoMEMS and ICs is now also
possible. Regarding PZT deposition tools, very promising results from single target sputtering on 150
and 200 mmwafers have been obtained in the project by Oerlikon, EPFL and Fraunhofer ISIT. Currently,
an e
31,f
of 13.8 C/m
2
has been obtained on 200 mm wafers. Also, the status of an automated cluster
coater for CSD of PZT from Solar-semi will be presented. In-line quality monitoring is very important
for process control in a production environment and an automated Double Beam Laser Interferometer
(aixDBLI from aixACCT) integratable with a wafer robot capable of non-destructive e
31,f
estimation,
will be shown.
The consortium has the aim of aciting as a contact point and compentece centre for piezoMEMS
capable of prototyping and low volume fabrication. The plans for this will be presented.
46 2
nd
Manufacture of Minature Tuneable Autofocus Lenses (TLens) using Piezo
MEMS
J.W. Phair
1
and Daniel Rosenfeld
1
1
poLight AS, Norway
poLight AS, a Norwegian-based start-up company, has developed the worlds rst piezo-actuated
autofocus lenses without moving parts. Its proprietary technology enables the production of wafer-scale
active optic components based on deformable polymers. poLights TLens oers some crucial advan-
tages to the camera module market thanks to its extremely small size (4.2 mm4.2 mm0.5 mm), while
achieving high optical quality (megapixel independent and HD compatible). These features, combined
with its reow-compatible manufacturing, positions the TLens as the ideal solution for the latest camera
phone applications such as videos with continuous-autofocus. The presentation will discuss the progress
poLight is making in bringing the production of the piezo-actuated TLens from small volume to high
volume including the main technical hurdles. A discussion of piezo production for the TLens, test and
measurement, integration as well as environmental consideration during the manufacture to high volume
will also be made.
2
nd
Wafer Level Poling of PZT thin lms for MEMS Sensor Devices
Seunghun Han
1
, Yunsung Kang
1
, Wonkyu Jung
1
, Jun Lim
1
and Jungwon Lee
1
1
Samsung Electro-Mechanics, Korea
In recent decades, thin lm type PZTs have been spotlighted for MEMS applications because or their
excellent piezoelectric properties. PZT thin lms have to be poled along one direction to have proper
piezoelectric properties. However there might be enormous loss in process time or costs by individual
chip poling. Furthermore, most of piezo-MEMS devices cannot be operated after poling process, it
is impossible to check the performance of device without wafer level poling. For these reasons, it is
essential to develop wafer level poling process for MEMS device.
In order to overcome conduction defects problems of wafer level poling for MEMS sensor device,
two types of processes were evaluated. Non-contact poling method using corona discharge showed
insucient remnant polarization of 15 C/cm
2
with PZT surface damages. The other method supplied
excess current to the conduction defects of the PZT thin lm, conduction path was eliminated. In this
way, wafer level poling was successfully demonstrated without any breakdown or degradation of MEMS
sensor devices. Remnant polarization of the poled PZT thin lms was 20 C/cm
2
.
48 2
nd
Eects of Nanoscale Conment on Ferroelectric Properties: Research
Activity at the Center for Space Human Robotics
V. Cauda
1
, G. Canavese
1
, S. Stassi
1
, M. Lombardi
1,2
, R. Gazia
1
, I. Aulika
1
, M. Quaglio
1
, C.F. Pirri
1,2
1
Center for Space Human Robotics, Italian Institute of Technology, C.so Trento 21, Turin, 10129, Italy
2
Materials Science and Chemical Engineering Department, Politecnico di Torino, Turin, Italy
The activities of Center for Space Human Robotics (CSHR), part of the Italian Institute of Technol-
ogy (IIT), are focused on the development and prototyping of integrated systems for human robotics.
Particular interest is devoted to the design and fabrication of a hand-exoskeleton for motion support in
both space and human activity. The fabrication of a hand-exoskeleton requires the development of: i)
actuators and sensors (e.g. tactile sensors) to properly manage the interface of the exoskeleton with
both the human body and the external environment, ii) electronics to manage the entire system, and iii)
energy sources and storage systems to power it. In this scenario CSHR has focused its activity on the
eect of nanoscale connement on the piezoelectric properties of materials analysed in its three main
forms: thin lms as 1D conned structures, nanowires as 2D conned structures and hybrid materials
with nanosized llers as 3D conned structures.
2
nd

Figure 1. Polarization hysteresis and displacement curves obtained as a result of 3 cycles. Inset: Scanning
electron microscopy image of the PVDF-TrFE nanowires after dissolution of the alumina membrane, with
some residues of the dissolved alumina.

Fig. 1. Polarization hysteresis and displacement curves obtained as a result of 3 cycles. Inset: Scanning electron
microscopy image of the PVDF-TrFE nanowires after dissolution of the alumina membrane, with some residues
of the dissolved alumina.
To obtain exible and performing materials, piezoelectric hybrids based on barium titanate nanopar-
ticles (npBT) dispersed in a 3Dpolymeric network were developed. In particular electroactive polyvinyli-
dene uoride (PVDF) or passive (UV-cured acrylic or epoxide resins) polymers were used as matrices.
Despite the npBT slightly aected the composite mechanical properties, they were able to improve the
thermal and functional behaviour. The eect of npBT size distribution and their crystalline phase were
evaluated. Another representative example of increased piezoelectric properties upon nanoconnement
is given by 1D polymeric nanowires.
An ease and fast wet-impregnation method from a solution of PVDF copolymer (PVDF-TrFE) lead
in one step to an array of 1D piezoelectric nanostructures distributed in an insulating matrix, i.e. 60 m
thick porous Anodic Alumina Membranes (AAM, Whatman, av. pore size: 200 nm) [1]. The polymeric
nanowires showed a diameter of about 150 nm, several micrometers in lengths and a high lling ratio of
the alumina pores (Inset of Fig.1). X-ray diraction and infrared spectroscopy showed that the high level
of crystallinity is induced by the connement into the pores of the AAM and results in a pronounced
2
nd
piezoelectric eect. Hysteresis measurements were recorded simultaneously with sample displacement
data by a Piezo Evaluation System (TFAnalyzer 2000HS, Aixacct) coupled to a single point laser vi-
brometer (Polytec OVF-505), showing a polarization curve typical of ferroelectric material with a P
r
of
approximately 14.3 C/m2 (Fig.1) and coercitive eld of 4.3 MV/m. It is noteworthy that the averaged
d
33
constant (obtained from the linear part of the piezoelectric displacement curve) is about 97 pm/V,
which is quite higher with respect to the literature values (from 5 to 20 pm/V of pre-poled thin lm of
PVDF-TrFE [2]). Despite the absence of pre-poling of the PVDF-TrFE nanowires, we attribute this
higher d
33
value to the higher percent of polymer crystallinity, which is due to the connement into the
pores of alumina.
As a future outlook, these crystalline piezoelectric nanowires distributed in vertical array can be en-
gineered in a piezoelectrical MEMS device, thus potentially addressing applications like tactile sensors
for humanoid robotics.
[1] V. Cauda, et al., Sensors & Tran. J., 2011, accepted.
[2] V. Maheshwari, et al., Angew. Chemie, Int. Ed. 2008, 47, 7808.
50 2
nd
Dr Eric Mounier
1
1
Yole D eveloppement, France
Ferroelectric materials are historically not common for semiconductor manufacturing companies
who are often reluctant to adopt these exotic materials in their fabs. But this approach has changed in
the 2000s with the adoption of ferroelectric thin lms by well known companies in a variety of markets.
We have analyzed and estimated the MEMS and non MEMS applications for ferroelectric thin lms.
We particularly looked at the piezo eect of ferroelectric thin lms for MEMS. In 2010, we estimated
ferroelectric thin lm production is about 900 k 6 wafers. It is done through two main applications:
MEMS inkjet heads and IPD ESD/EMI planar capacitors that together represent 90% of the production.
Large companies (Epson, STM, NXP) have adopted ferroelectric thin lms at a large industrial scale for
the past several years.
We estimate that, until 2015, the ferroelectric thin lm business will continue to grow at rate of
+7.5% / year with many current or new MEMS applications: Wafer Level Autofocus, IR sensors, RF
switches, and medical ultrasonic transducers.
In non MEMS markets, ferroelectric thin lmswill be used for IPD tunable capacitor, IPD hearing
aids, FeRAM, optical switches. These applications will represent 26% of the total ferroelectric thin lm
production in 2015 which will be more than 1,000 k 6" wafers.
Our talk will review the dierent applications and market volume for piezoelectric MEMS.
a
Author Title
Page No.

Abergel, J.
Direct and Indirect Piezoelectric Characterization of PZT Thin
Films for MEMS Applications
40
Baron, T. HBAR and their applications 21
Baron, T. FBAR filters for space application based on LiNbO
3
membrane 16
Bharadwaja, R. Low Temperature Laser Processing of Ferroelectric Thin Films 44
Bui-Thi, K.-A.
Properties of PMN-PT 65/35 thin film oriented -<011> at radio
frequency measured by coplanar waveguide
42
Cauda, V.
48
Chidambarm, N
Effective piezoelectric coefficients of PZT thin films for energy
harvesting with interdigitated electrodes
22
Chidambarm, N
Interdigitated Electrodes Based Cantilevers for Piezoelectric
Energy Harvesting
26
Felmetsger, V. Reactive Magnetron Sputtering of Ultrathin Piezoelectric 23
Felmetsger, V.
Sputter Deposition of Piezoelectric AlN Thin Films on Vertical
Walls of Micromechanical Devices
12
Gariglio, S.
8
Gariglio, S.
0.2
Ti
0.8
)O
3
Thin Films on
37
Han, S. Wafer Level Poling of PZT thin films for MEMS Sensor Devices 47
Han, S.
2
Ferroelectric Properties of PZT Films Deposited by RF
24
Harigai, T Piezoelectric Thin Films and Their Applications 3
Jackson, N.
Influences of Titanium Underlayer on (002) Oriented Aluminium
Nitride
25
Janphuang, P.
8
Janphuang, P.
0.2
Ti
0.8
)O
3
Thin Films on
35
Janssens, A.
Introduction of new manufacturing technology for Piezo (PZT)
MEMS production
36
Kaden, D.
38
Kaden, D.
Measurements of Electrical and Electromechanical
Characteristics of Piezoelectric Thin Films and Optimization of
Poling
37
Kang, S.-Y.
2
Ferroelectric Properties of PZT Films Deposited by RF
24
b
Kang, S.-Y. Wafer Level Poling of PZT thin films for MEMS Sensor Devices 44
Kessels, R.
Poling
37
Kessels, R.
38
Kijima, T.
Spin-Coat Technology of KNN Film Deposition with Oxygen
Pressurizing RTA
41
Kirby, P.
Piezoelectric MEMS Fabrication Integrating Thermally and
Mechanically Incompatible Materials
31
Klee, M.
4
Kosec, M.
Influence of Solution Synthesis Conditions on Crystallization and
41
Kratzer, M.
38
Le Rhun, G.
Poling
39
Le Rhun, G.
40
Lombardi, M.
45
Malic, B.
Influence of Solution Synthesis Conditions on Crystallization and
43
Mathewson, A.
Influences of Titanium Underlayer on (002) Oriented Aluminium
Nitride
25
Matloub, R
Electromechanical properties of Al0.9Sc0.1N thin films evaluated
at 2.2 GHz Film bulk acoustic resonators
15
Mauczok, R.
4
Mazzalai, A.
Effective piezoelectric coefficients of PZT thin films for energy
harvesting with interdigitated electrodes
22
Mazzalai, A.
Interdigitated Electrodes Based Cantilevers for Piezoelectric
Energy Harvesting
26
Mazzalai, A.
36
Metzger, T.
New Trends in Piezoelectric Devices for RF Application in Mobile
Phones
13
Milyutin, E.
15
Milyutin, E. Local Polarity Control of (001)AlN Thin Films 27
Moulard, G.
New Trends in Piezoelectric Devices for RF Application in Mobile
13
c
Phones
Mounier, E.

50
Muralt, P.
15, 22, 26,
27, 29, 38,
39, 45
Pensala, T. Piezoactuated AlN-Si MEMS Resonators and Sensors 14
Phair, J.
using Piezo MEMS
46
Pham-Thi, M.
Hyper Frequency properties of 3 inches-frozen capacitive
MEMS with PZT thin films processed by sol-gel
28
Pham-Thi, M.
Properties of PMN-PT 65/35 thin film oriented -<011> at radio
frequency measured by coplanar waveguide
42
Piazza, G.
Laterally Vibrating Micro and Nanomechanical Piezoelectric
Aluminum Nitride Resonators for RF Communications and
Chemical Sensing
11
Piorra, A.
Lead Free Laser Deposited Thin Films Of 0.5(Ba
0.7
Ca
0.3
TiO
3
)
0.5(Ba(Zr
0.2
Ti
0.8
)O
3
)
17
Pirri, C. F.
48
Polcawich, R. PiezoMEMS Technology for Enabling mm-Scale Robotics 5
Remiens, D. Performances of Piezoelectric Nano Structures 10
Rijnders, G.
All-oxide PiezoMEMS Devices by Pulsed Laser Deposition:
Properties of Clamped Epitaxial PZT Thin Films
35
Rosenfeld, D.
using Piezo MEMS
46
Sandu, C.
15
Schreiter, M.
Piezoelectric MEMS based energy harvesting module for
wireless tire pressure monitoring
6
Thyholdt, F.
FP7 piezoVolume - High Volume Piezoelectric Thin Film
Production
Process For Microsystems
45
Tiedke, S.
Poling
39
Tiedke, S.
40
Trolier-
McKinstry, S.
Microcontact Printing of PZT Films for MEMS 18
Trolier-
McKinstry, S.
Low Temperature Laser Processing of Ferroelectric Thin Films 44
Verdot, T. Active Damping with a piezoelectric MEMS device 29
Vogl, A.
Modelling of piezoelectric micromachined ultrasound transducers
(pMUT) for medical use
30
d
Vullers, R.
AlN and PZT Thin Films: Essential Ingredients for Piezoelectric
Energy Harvesters
7
Welsh, A. Microcontact Printing of PZT Films for MEMS 18

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2

values are calculated from cantilever data

INNOVATION HAS A NAME.

. Sidewall AlN and Mo lm thicknesses were approximately

A, respectively. The c/a ratio decreased to 1.575 from 1.601 of pure

C) and a higher nitrogen concentration in Ar-N2 gas

C, while the N2 ux is reduced to the value enabling

(200 nm) to 3.1

(25 nm) on Mo electrodes.

(AlN) and 1.8

C in order to limit the diusion of Au

C, but an attractive option which has recently been

C. A high eective electromechanical coupling constant (k

C during lm deposition. Challenges arise

C; however large thermal budgets (500

C) are required to crystallize ferroelectric

C. Both {111} and {100} orientations were achieved in 200-

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