Amity University Haryana Amity School of Engineering and Technology Department of Electronics and Communication Engineering

Tutorial Sheet 1
1. The conductivity of intrinsic Si is 3 s/m at room temperature and the electron and hole mobilities in it are 0.4 m2/V.Sec and 0.2 m2/V.Sec respectively. Calculate the number of electrons and holes per m3 participating in the conduction process. 2. Show that the maximum rectification efficiency of HWR is 40.6% and that of FWR is 81.2% 3. A full wave rectifier circuit uses two silicon diodes with a forward resistance of 20 each. A DC voltmeter connected across the load of 1k reads 55.4volts. Calculate a. IRMS b. Average voltage across each diode c. ripple factor d. Transformer secondary voltage rating. 4. The voltage across a Si diode at room temperature of 3000k is 0.71V when 2.5mA current flows through it. If the voltage increases to 0.8V, calculate the new diode current. 5. Find the conductivity of intrinsic silicon at 3000 K. It is given that ni at 3000 K in silicon is 1.5X1010 /cm3 and the mobilities of electrons and holes in silicon are 1300cm2/V-s and 500 cm2/V-s respectively. a. If donor type impurity is added to the extent of 1 impurity atom in 108 silicon atoms find the conductivity. b. If acceptor type impurity is added to the extent of 1 impurity atom in 108 silicon atoms find the conductivity. 6. A specimen of silicon is 0.2 mm long and has a cross-section of 0.2x0.2 mm. One volt impressed across the bar results in a current of 8 mA. Assuming that the current is due to electrons, calculate: a. Concentration of free electrons, and b. Drift velocity Given that at 3000 K mobilities of electrons is1300 cm2/V-s. 7. A potential difference if 10 V is applied longitudinally to a rectangular specimen of intrinsic germanium of length 25mm, width 4 mm and thickness 1.5mm. Determine at room temperature: a. Electron and hole drift velocities b. The conductivity of intrinsic germanium if intrinsic carrier density is 2.5x1019 /m3 and c. The total current 8. A bridge rectifier is used to supply d.c. load of 20A at 20V from 117V source. What are the ratings of power transformer? 9. For silicon the intrinsic concentration is approximately 1016carriers/m3. If an impurity concentration of 1022donor atoms/m3 is doped, determine the electron and hole concentration. .

Amity University Haryana Amity School of Engineering and Technology Department of Electronics and Communication Engineering
Tutorial Sheet 2
1. Find the value of if = 0.98 for a transistor. 2. A BJT with = 49 and ICO = ICBO = 1 A and IB = 10A. Calculate IC? 3. An emitter follower using p-n-p transistor with 0 = 150 is biased at IC = 0.25 mA. The voltage signal source has RS = 3k : a. In order to make overall R0 = 110 determine RE. b. For this value of RE obtain AV and input resistance. 4. In the fixed bias circuit of a transistor VCC = 15V, RB = 300k , RL = 2k . If = 100, ICO = 20nA and VBE = 0.7V. Find the stability factor of Q-point with respect to ICO. 5. Potential divider biasing from VCC = 15 volts is obtained for an n-p-n transistor. Given R1 = 72k , R2 = 18k , RE = 1.4k , RC = 4k . Determine the operating point: a. When = 125 b. When is doubled c. Use VBE = 0.7V and comment on stability of operating point with change in . 6. The h-parameters of a transistor used in a CE circuit are hie = 1.0 K , hre = 10104, hfe = 50, hoe = 100 K. The load resistance for the transistor is1 K in the collector circuit. Determine Ri, Ro, AV ,AI in the amplifier stage (Assume RS = 1000 ).

Amity University Haryana Amity School of Engineering and Technology Department of Electronics and Communication Engineering
Tutorial Sheet 3
1. In a CE transistor amplifier when signal changes by 0.02V, the base current changes by 10A and collector current by 1 mA. If the collector resistance RC = 5k and RL = 10k , find; a. Voltage gain b. Current gain c. Input impedance d. AC load resistance, and e. Power gain 2. In the circuit shown, if IC=2mA and VCE=3V. Calculate R1 and R3.

3. For the CE amplifier circuit shown below, find the percentage change in collector current if the transistor with hfe=50 is replaced by another transistor with hfe=150. Assume VBE=0.6V (figure 4)

4. If the various parameters of a CE amplifier which uses the self bias method are VCC = 12 V, R1 = 10 k , R2 = 5k , RC 1k , Re =2 K and = 100, find a. The coordinates of the operating point, and b. The stability factor, assuming the transistor to be of silicon. 5. Calculate the values of IE, dc and dc for a transistor with IC=12.427A, IB=200mA, ICBO=7A. Also determine the new level of IC which will result from reducing IB to 150A. 6. In the CE amplifier of self biasing IE = 1 mA, RE = 1000 and = 49. Find the value of R1 and R2 such that the stability factor does not exceed 5. Assume VCC = 5V and VBE = 0.

Amity University Haryana Amity School of Engineering and Technology Department of Electronics and Communication Engineering
Tutorial Sheet 4
1. For an N-channel JFET drain current with gate shorted: 8.7 mA pinch off voltage is 1V. Find the value of a. Drain current. b. Transconductance 2. For the circuit shown below, find the values of VDS and VGS. Given ID=5mA, VDD=10V, RD=1K , RS=500 .

3. A JFET has VP = - 4.5 V, IDSS = 10 mA and IDS = 2.5 mA. Determine the transconductance. 4. A self-biased n-channel JFET has a VD = 6 V. VGS = 3 V. Find the value of VDS. 5. Refer to figure sh1own below. Determine the value of VS and VDS.

6. Refer to the given figure. ID = 6 mA. Calculate the value of VDS.

7. With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA? 8. A JFET data sheet specifies VGS(off) = 6 V and IDSS = 8 mA. Find the value of ID when VGS = 3 V. 9. Refer to this figure. Find the value of VD.

10. Refer to this figure. The voltage gain is

Amity University Haryana Amity School of Engineering and Technology Department of Electronics and Communication Engineering
Tutorial Sheet 5
1. The open-loop gain of an amplifier is -200. A voltage series negative feedback is used with a feedback ratio of -0.02.The input and output impedances of the amplifier are 2k and 40k respectively in the absence of feedback. Determine the closed-loop gain, input and output impedances when the feedback circuit is completed.

2. The gain and distortion of the amplifier are 150 and 5% without feedback. If 10% of its output voltage applied is fed back as negative feedback, find the distortion of the amplifier with feedback.

3. An Amplifier has a voltage gain of 400, f1=50Hz, f2 = 200 KHz and a distortion of 10% without feedback. Determine the voltage gain, f1f, f2f and Df when a negative feedback is applied with feedback ratio of 0.001.

4. The gain of an amplifier is decreased to 1000 with negative feedback from its gain of 5000. Calculate the feedback factor and the amount of negative feedback in dB.

5. In the base bias with collector and emitter feedback circuit, VCC = 24V, RL = 10k and RE = 270 . If the silicon transistor is used with = 45 and if under quiescent conditions VCE = 5V determine RB and stability factor.