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Ver1.4 Nov.2011
(Contents)
3D Lithography by ASS
(Contents)
Company overview
Mejiro Precision Confidential 4
Activities
Employees
Mejiro Precision aims at Fab-less Company. The main business is research & development, and manufacturing has been consigned to the external cooperation company.
Business Composition
Mejiro Precision Confidential 5
Optical technology
Stepper(projection exposure machine) Light source and optics irradiation unit Custom-designed optical system Objective lens
Organization
Mejiro Precision Confidential 6
Shareholders meeting Auditors Meeting Managing Board
Representative Director CEO Ichiyo Kotani Representative Director COO Seiro Murakami
(Contents)
Exposure machine for Exposure machine for Electronic circuit board & package
0.1 0.2
10
Exposure area
22 100200 150500
e Se r ie s
Su bst r at e Size
Pr o du c t io n be gin n in g
Nu m be r s o f sale s
5 3.5 5 3.5
10-20
0.5-1.0
300mm x 300mm 2 " - 1 2 " W afe r 300mm x 300mm 2 " - 1 2 " W afe r 300mm x 300mm 2 " - 1 2 " W afe r
SAW , ASIC
2 0 1 0 / spr in g
20-50
1-2.5
2 0 0 9 / su m m e r
50-110
2.5-
2 0 0 9 / su m m e r
Spec ial
100
LED, M EM S
2 0 1 1 / au t u m n
(Contents)
10
Introduction of ASS
Mejiro Precision Confidential 11
Concept
Mejiro Precision Confidential 12
Demand for stepper from markets other than mass production field
Open NA aperture
Squeeze NA aperture.
90 80 70 60 50 40 30 20 10 0
2 0 1 0
Resolving power
The total length of three kinds are uniformed Lenses can be exchanged in one week at the customers site
A wide exposure specification and a multi generation are enabled with one exposure machine.
Main Body
Projection Flame
Practicable Productivity
Mejiro Precision Confidential 17
High Throughput
The technology of stepper (MMS) for electronic circuit board and the package mass production was applied as it was. Small size and lightweight X/Y stage
( 300mmx300mm 12 stroke capability )
High throughput ( 30 second / 12 "Wafer substrate) A small-scale production line can be constructed.
Mejiro Precision Confidential 18 ASS stepper is composed of a lot of independent functional elements (more than 50 kinds of modules). An individual module corresponds to all the possible function variations with the possibility that the customer uses it. The module can be assumed that all are optional, and be selected.
Reticle system
Projection lens
modular framework
Surface alignment
Alignment Microscope
Alignment mark
Prism by return
Substrate Holder
Mejiro Precision Confidential 20
Substrate
(Contents)
22
Resolution =
NA High
NA Low
Depth of Focus =
Defocus
Image Contrast
Higher NA lens can resolve critical dimension pattern, but reduces focus depth rapidly. When high NA is used for the rough pattern, the focus depth becomes shallow. In the rough pattern, large DOF can be obtained by lower NA according to pattern size.
Fine IC,LSIDRAM, CPU Logic, etc) Super Flat1 No DOF Requirement Larger NA Finer Pattern
Package, Bump, LED, Ceramic, MEMS. Large10100500 Large DOF Requirement Optimum NA Maximum DOF
Introduction of Variable NA Optics enables to obtain best resolving power (maximum DOF) at various pattern size.
Sub-micron pattern generation 10.8 Resolution Enhancement technology (RET) can enable much higher resolution and depth of focus. ASS stepper can introduce Annular Illumination as RET. By Annular Illumination introductionDOF increase is 20-30% compared to conventional illumination in optimum condition. 0.8 It is possible to correspond to 0.5m pattern by exchanging for A lens.
As a result, deep focus depth can be secured in each generation of device manufacturing.
+ + Annular
September, 2011
30
90 80 70 60 50 40 30 20 10 0
2 0 1 0
Resolving power
Basic concept
31
st iffracted light
32
90% 81%
The reticle with continuous density distribution is made corresponding to three dimension forming. The density is decided by the number of patterns of the non-resolved dot for each area.
The relation between absorption energy (E) by the exposure and resist dissolution depth (Z) are experimentally decided.
E1 E2 E3 Plot Z2 Z3
E1
Resist thickness
Z1
E2 E3 Emin. Z3 Z2 Z1 z
Dissolution depth function Z = D (E) is decided. E(Z) corresponding to dissolution depth Z is calculated. E(Z) = D (Z)
-1
35
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