FDFS2P102

October 2000

FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
General Description
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Features
3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 V RDS(ON) = 0.200 @ VGS = 4.5 V.

VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Schottky and MOSFET pinout for design flexibility.

Applications
DC/DC converters Load Switch Motor Drives

D D C C

A 1 A 2
G S A

8 7

C C

S 3 G 4

6 D 5 D

Pin 1

A
T A=25 oC unless otherwise noted

MOSFET Maximum Ratings

Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

Parameter

Ratings
-20 20
(Note 1a)

Units
V V A W

-3.3 -20 2

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1 0.9 -55 to +150 C

T J, T STG

Operating and Storage Temperature Range

T A=25 C unless otherwise noted
o

Schottky Diode Maximum Ratings

V RRM IO Repetitive Peak Reverse Voltage Average Forward Current

20
(Note 1a)

V A

Package Marking and Ordering Information

Device Marking FDFS2P102 Device FDFS2P102 Reel Size 13 Tape Width 12mm Quantity 2500 units

2000 Fairchild Semiconductor International

FDFS2P102 Rev. E

FDFS2P102

Electrical Characteristics
Symbol Parameter

TA = 25 C unless otherwise noted

Test Conditions
VGS = 0 V, ID = -250 A VDS = - 16 V, VGS = 0 V TJ = 55C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = -250 A VGS = -10 V, ID = -3.3 A VGS = -4.5 V, ID = -2.5 A VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -3.3 A

Min

Typ

Max Units

Off Characteristics
BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Forward Leakage Gate-Body Reverse Leakage
(Note 2)

-20 -1 -10 100 -100

V A nA nA

On Characteristics
VGS(th) RDS(on) ID(on) gFS

Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance

-1

-1.4 0.100 0.167

-2 0.125 0.2

V A

-10 5

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = -10 V, VGS = 0 V, f = 1.0 MHz

270 150 45

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge

VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6

8 7 17 10

16 14 27 1.8 10

ns ns ns ns nC

VDS = -5 V, ID = -3.3 A, VGS = -10 V,

Drain-Source Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)

-1.3 -0.8 -1.2

A V

Schottky Diode Characteristics

IR VF Reverse Leakage Forward Voltage VR = 20 V IF = 1 A IF = 2 A

TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 78 40

250 18 0.47 0.39 0.58 0.53

uA mA V

Thermal Characteristics
R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 50 C/W when mounted on a 1 in2 pad of 2 oz. copper.

b) 105 C/W when mounted on a 0.04 in2 pad of 2 oz. copper.

c) 125 C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDFS2P102 Rev. E

FDFS2P102

Typical Characteristics
20 - I D, DRAIN-SOURCE CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2

16

VGS= -10V -7.0V -6.0V -5.0V -4.5V

1.8 VGS = 4.0V 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A)

12

4.5V 5.0V 6.0V 7.0V 10V

-4.0V
4

-3.5V

2 3 4 -V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.06 RDS(ON), ON-RESISTANCE (OHM)

2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 7.6A VGS = 10V

ID = 3.8A 0.05 TA = 125 C 0.04 0.03 0.02 0.01 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
o

TA = 25oC

Figure 3. On-Resistance Variation with Temperature.

60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 25oC 125 C
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDFS2P102 Rev. E

FDFS2P102

Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 8

(continued)

2400 VDS = 10V 20V 40V CAPACITANCE (pF) 2000 CISS 1600 1200 800 400 0 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS f = 1MHz VGS = 0 V

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

10 I F, FORWARD CURRENT (A) 5

I R, R EVE R SE CU R R EN T (A )

0.001

2 1

TJ = 125 C 25 C

0.0005

TJ = 25 C

0.5

0.0002

0.2 0.1
0.0001

0.1

0.2 0.3 0.4 V F , FORWARD VOLTAGE (V)

0.5

0.6

10 15 V R , R EVER SE V OLTA GE (V)

20

Figure 9. Schottky Diode Forward Voltage.

Figure 10. Schottky Diode Reverse Current.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002

D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)

R JA (t) = r(t) * R JA R JA =135 C/W

t1

t2

TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2

0.001 0.0001

0.001

0.01

0.1 t1 , TIME (sec)

10

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.

FDFS2P102 Rev. E

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Rev. F1

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