TIP3055 (NPN),

TIP2955 (PNP)
Complementary Silicon
Power Transistors
Designed for generalpurpose switching and amplifier applications.
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Features

DC Current Gain

15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 90 WATTS

hFE = 20  70 @ IC
= 4.0 Adc
CollectorEmitter Saturation Voltage
VCE(sat) = 1.1 Vdc (Max) @ IC
= 4.0 Adc
Excellent Safe Operating Area
PbFree Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

60

Vdc

Collector Emitter Voltage

VCER

70

Vdc

Collector Base Voltage

VCB

100

Vdc

Emitter Base Voltage

VEB

7.0

Vdc

Collector Current Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD

90
0.72

W
W/_C

TJ, Tstg

 65 to
+ 150

_C

Symbol

Max

Unit

Thermal Resistance, JunctiontoCase

RqJC

1.39

_C/W

Thermal Resistance, JunctiontoAmbient

RqJA

35.7

_C/W

Operating and Storage Junction

Temperature Range

SOT93 (TO218)
CASE 340D
STYLE 1

MARKING DIAGRAM

AYWWG
TIPxx55

THERMAL CHARACTERISTICS
Characteristic

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

A
Y
WW
TIPxx55
xx
G

= Assembly Location
= Year
= Work Week
= Device Code
= 30 or 29
= PbFree Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005

September, 2005 Rev. 6

Publication Order Number:

TIP3055/D

TIP3055 (NPN), TIP2955 (PNP)

ORDERING INFORMATION
Package

Shipping

TIP3055

Device

SOT93 (TO218)

30 Units / Rail

TIP3055G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP2955

SOT93 (TO218)

30 Units / Rail

TIP2955G

SOT93 (TO218)
(PbFree)

30 Units / Rail

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

60

Vdc

Collector Cutoff Current

(VCE = 70 Vdc, RBE = 100 Ohms)

ICER

1.0

mAdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

ICEO

0.7

mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

ICEV

5.0

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

5.0

mAdc

20
5.0

70

1.1
3.0

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

Is/b

3.0

Adc

Current Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.5

MHz

SmallSignal Current Gain

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

hfe

15

kHz

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)

DYNAMIC CHARACTERISTICS

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

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2

TIP3055 (NPN), TIP2955 (PNP)

hFE , DC CURRENT GAIN

1000

VCE = 4.0 V
TJ = 25C
100

TIP3055
TIP2955

10
0.1

0.2

0.5 0.7 1.0

0.3
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

100
50
30
20
1.0ms

10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.

300 ms

dc
10ms
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25C
TJ = 150C
40 60
2.0
4.0 6.0
10
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

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3

TIP3055 (NPN), TIP2955 (PNP)

PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E

C
Q

U
S

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

L
1

J
H

MILLIMETERS
MIN
MAX

20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF

16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

STYLE 1:
PIN 1.
2.
3.
4.

V
G

INCHES
MIN
MAX

0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF

0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

BASE
COLLECTOR
EMITTER
COLLECTOR

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
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TIP3055/D