pn Junction (5/11/00) Page 1-2.

1
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
1.2 - DEPLETION REGION OF A PN JUNCTION
INTRODUCTION
Objective
Characterize and model the pn junction
Outline
Physical aspects of pn junctions
Mathematical models of the pn junction
- Depletion capacitance
- Breakdown characteristics
pn Junction (5/11/00) Page 1-2.2
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
PHYSICAL ASPECTS OF THE PN JUNCTION
Abrupt Junction
Metallurgical Junction
p-type semiconductor n-type semiconductor
i
D
+ - v
D
Depletion
region
x
p-type
semicon-
ductor
n-type
semicon-
ductor
i
D
+
-W
1 0
W
-D
v -
W
2
Fig. 1.2-1
1. Doped atoms near the metallurgical junction lose their free carriers by diffusion.
2. As these fixed atoms lose their free carriers, they build up an electric field which opposes the diffusion
mechanism.
3. Equilibrium conditions are reached when:
Current due to diffusion = Current due to electric field
pn Junction (5/11/00) Page 1-2.3
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
MATHEMATICAL CHARACTERIZATION OF THE PN JUNCTION
Abrupt PN Junction
Cross section of an ideal pn junction:
p-type
semi-
con-
ductor
n-type
semi-
con-
ductor
i
D
+ -
v
D
x
d
x
n
x
p
Symbol of the pn junction:
i
D
v
D
+ -
v
D
+ -
i
D
Fig. 1.2-1
N
D
x
0
Impurity concentration (cm
-3
)
x
0
Depletion charge concentration (cm
-3
)
-W
1
Electric Field (V/cm)
E
0
x
x
Potential (V)
x
d

0
+ V
R
-N
A
qN
D
-qN
A
Fig. 1.2-2
W
2
V
2
V
1
Apply a
reverse
bias,
v
D
= -V
R
pn Junction (5/11/00) Page 1-2.4
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
Summary of the PN Junction Characterization
Barrier potential-

o
=
kT
q
ln

_
N
A
N
D
n
i
2
= V
t
ln

_
N
A
N
D
n
i
2

Depletion region widths-

W
1
=
2
si
(
o
-v
D
)N
D
qN
D
(N
A
+N
D
)
W
2
=
2
si
(
o
-v
D
)N
A
qN
D
(N
A
+N
D
)
W
1
N

Depletion capacitance-
C
j
= A

si
qN
A
N
D
2(N
A
+N
D
)

1

o
-v
D
=
C
j0
1-
v
D

o

Fig. 1.2-3
v
D 0
C
j0
C
j

0
pn Junction (5/11/00) Page 1-2.5
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
Example 1
An abrupt pn junction in silicon has the doping densities of N
A
= 10
15
atoms/cm
3
and N
D
= 10
16
atoms/cm
3
. calculate the junction built-in potential, the depletion-layer widths, the maximum field with
10V reverse bias and the depeletion capacitance with 10V reverse bias if C
j0
= 3pF.
Solution
At room temperature, kT/q = 26mV and the intrinsic concentration is n
i
= 1.5x10
10
cm
-3
. Therefore, the
junction built-in potential is

o
= 0.026 ln

_ 10
15
10
16
2.25x10
26
= 0.637V
The depletion width on the p-side is,
W
1
=
21.04x10
-12
10.64
1.6x10
-19
10
15
1.1
= 3.55x10
-4
cm = 3.55m
The depletion width on the n-side is,
W
2
=
21.04x10
-12
10.64
1.6x10
-19
10
16
11
= 0.35x10
-4
cm = 0.35m
The maximum field occurs for x = 0 and is

max
= -
qN
A

W
1
=

_ -1.6x10
-19
10
15
3.5x10
-4
1.04x10
-12
= -5.38x10
4
V/cm
The depletion capacitance can be found as
C
j
=
3pF
1 +
10
0.5
= 0.65pF
pn Junction (5/11/00) Page 1-2.6
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
Summary of the PN Junction Characterization - Continued
Breakdown voltage-
V
R
=

si
(N
A
+N
D
)
2qN
A
N
D
E
2
max

1
N

where E
2
max
is the maximum electric field before breakdown occurs (usually due to avalanche
breakdown).
Reverse leakage current-
The reverse current, I
R
, increases by a multiplication factor M as the reverse voltage increases and is
I
RA
= MI
R
where
M =
1
1 -

_
V
R
BV
n

I
D
(mA)
V
D
(V)
BV = V
R
5 -5 -10 -15 -20 -25
1
2
3
-1
-2
-3 Fig. 1.2-4
Breakdown
pn Junction (5/11/00) Page 1-2.7
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
Example 2
An abrupt pn junction has doping densities of N
A
= 5x10
15
atoms/cm
3
and N
D
= 10
16
atoms/cm
3
.
Calculate the breakdown voltage if
crit
= 3x10
5
V/cm.
Solution
V
R
=

si
(N
A
+N
D
)
2qN
A
N
D
E
2
max
=
1.04x10
-12
15x10
15
21.6x10
-19
5x10
15
10
16
= 88V
pn Junction (5/11/00) Page 1-2.8
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen
Summary of PN Junction Characterization - Continued
Graded junction:
N
D
-N
A
x
0
Fig. 1.2-5
Above expressions become:
Depletion region widths-

W
1
=

_
2
si
(
o
-v
D
)N
D
qN
D
(N
A
+N
D
)
m

W
2
=

_
2
si
(
o
-v
D
)N
A
qN
D
(N
A
+N
D
)
m
W

_ 1
N
m

Depletion capacitance-
C
j
= A

si
qN
A
N
D
2(N
A
+N
D
)
m

1
( )

o
-v
D
m
=
C
j0

_
1-
v
D

o
m

where 0.33 m 0.5.