BD677/A/679/A681 BD678/A/680/A/682

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

R1 Typ. = 10 K

R2 Typ. = 150

ABSOLUTE MAXIMUM RATINGS

Symb ol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T s tg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc 25 C Storage T emperature Max. Operating Junction T emperature
o

Valu e BD677/A BD678/A 60 60 BD679/A BD680/A 80 80 5 4 6 0.1 40 -65 to 150 150 BD681 BD682 100 100

Unit

V V V A A A W
o o

C C

For PNP types voltage and current values are negative.

October 1995

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BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbo l I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = rated VCBO V CE = rated VCBO TC = 100 C
o

Min .

T yp.

Max. 0.2 2 0.5 2

Unit mA mA mA mA

V CE = half rated V CEO V EB = 5 V I C = 50 mA for BD677/677A/678/678A for BD679/679A/680/680A for BD681/682 for BD677/678/679/680/681/682 I B = 30 mA I C = 1.5 A for BD677A/678A/679A/680A I B = 40 mA IC = 2 A for BD677/678/679/680/681/682 V CE = 3 V I C = 1.5 A for BD677A/678A/679A/680A V CE = 3 V IC = 2 A for BD677/678/679/680/681/682 V CE = 3 V I C = 1.5 A for BD677A/678A/679A/680A V CE = 3 V IC = 2 A I C = 1.5 A V CE = 3 V f = 1MHz 750 750 1

V CEO(sus) Collector-Emitter Sustaining Voltage

60 80 100 2.5 2.8 2.5 2.5

V V V V V V V

V CE(sat)

Collector-Emitter Saturation Voltage

V BE

Base-Emitter Voltage

h FE

DC Current Gain

h fe

Small Signal Current Gain

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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SOT-32 MECHANICAL DATA

mm MIN. A B b b1 C c1 D e e3 F G H 3 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 3.2 2.54 0.118 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106

DIM.

0016114

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BD677/677A/678/678A/679/679A/680/680A/681/682

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .

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