HiPerFASTTM IGBT

VCES
IC25
VCE(sat)
tfi typ

IXGH 40N60B2D1
IXGT 40N60B2D1

Optimized for 10-25 KHz hard

switching and up to 150 KHz
resonant switching

= 600 V
= 75 A
< 1.7 V
= 82 ns

Preliminary Data Sheet

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

600

VCGR

TJ = 25C to 150C; RGE = 1 M

600

VGES

Continuous

20

VGEM

Transient

30

IC25

TC = 25C (limited by leads)

75

IC110

TC = 110C

40

ICM

TC = 25C, 1 ms

200

SSOA
(RBSOA)
PC

VGE = 15 V, TVJ = 125C, RG = 10

Clamped inductive load @ 600 V
TC = 25C

ICM = 80

300

-55 ... +150

TJM

150

Tstg

-55 ... +150

300

TJ

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s
Md

Mounting torque (M3)

Weight

TO-247 AD
TO-268 SMD

TO-268
(IXGT)
G
E

TO-247 AD
(IXGH)

C (TAB)
G

E
C = Collector,
TAB = Collector

Features

z
z
z

6
4

G = Gate,
E = Emitter,

1.13/10 Nm/lb.in.

C (TAB)

g
g

Medium frequency IGBT

Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity

Applications
z

Symbol

VGE(th)

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

= 250 A, VCE = VGE

IC

ICES

VCE = VCES
VGE = 0 V

IGES

VCE = 0 V, VGE = 20 V

VCE(sat)

IC

= 30 A, VGE = 15 V

2003 IXYS All rights reserved

3.0
TJ = 25C
TJ = 150C

TJ = 25C

5.0

z
z

z
z

50
1

A
mA

100

nA

1.7

PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers

DS99109(10/03)

IXGH 40N60B2D1
IXGT 40N60B2D1
Symbol

gfs

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

IC = 30 A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %

20

2560

pF

210

pF

54

pF

100

nC

15

nC

36

nC

18

ns

20

ns

Cies
Coes

36

VCE = 25 V, VGE = 0 V, f = 1 MHz

Cres
Qg
Qge

IC = 30 A, VGE = 15 V, VCE = 300 V

Qgc
td(on)
tri

Inductive load, TJ = 25C

td(off)

IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3

tfi

130

200

ns

82

150

ns

Eoff

0.4

0.8 mJ

td(on)

18

ns

tri
Eon
td(off)
tfi

Inductive load, TJ = 125C

IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3

Eoff

20

ns

0.3

mJ

240

ns

150

ns

1.10

mJ

RthJC
RthCK

TO-247 AD Outline

Dim.

Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

TO-268 Outline

0.42 K/W
(TO-247)

Reverse Diode (FRED)

0.25

K/W

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

Symbol

Test Conditions

VF

IF = 30 A, VGE = 0 V, Pulse test

t 300 s, duty cycle d 2 %

IRM
t rr

IF = 30 A, VGE = 0 V, -diF/dt =100 A/s, TJ = 100C

VR = 100 V
TJ = 100C 100
IF = 1 A; -di/dt = 100 A/s; VR = 30 V
25

TJ =150C

1.6
2.5

V
V

A
ns
ns

0.9 K/W

RthJC
Min. Recommended Footprint

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

IXGH 40N60B2D1
IXGT 40N60B2D1
Fig. 1. Output Characte ristics
@ 25 Deg. C
60

9V

VGE = 15V
13V

180

7V

30
20

9V
120
90

7V

60

10

30

5V

5V

0
0.5

1.5

2.5

Fig. 3. Output Characteristics

@ 125 Deg. C

1.4

VGE = 15V
13V
11V

50

Fig. 4. De pende nce of V CE(sat) on

Tem perature

9V

V GE = 15V

1.3

V C E (sat)- Normalized

60

V C E - Volts

V C E - Volts

I C - Amperes

11V

150

40

I C - Amperes

I C - Amperes

210

VGE = 15V
13V
11V

50

Fig. 2. Extended Output Characte ristics

@ 25 de g. C

7V

40
30
20
10

5V

1.2

I C = 60A

1.1
1.0
0.9

I C = 30A

0.8
0.7

I C = 15A

0.6
0.5

1.5

2.5

-50

-25

V CE - Volts

25

50

75

100

125

150

TJ - Degrees Centigrade

Fig. 5. Collector-to-Em itter Voltage

vs. Gate-to-Em itter voltage

Fig. 6. Input Adm ittance

180
TJ = 25C

3.5

150

VC E - Volts

2.5

I C - Amperes

I C = 60A
30A
15A

2
1.5

120
90
60
TJ = 125C
25C
-40C

30

0
5

10 11 12

V G E - Volts
2003 IXYS All rights reserved

13 14 15 16 17

V G E - Volts

10

IXGH 40N60B2D1
IXGT 40N60B2D1
Fig. 8. Dependence of Turn-Off
Energy on RG

Fig. 7. Transconductance
60

40

I C = 60A

2.4

E off - milliJoules

g f s - Siemens

2.7

TJ = -40C
25C
125C

50

30
20

TJ = 125C
VGE = 15V
VCE = 400V

2.1
1.8
1.5

I C = 30A

1.2
0.9

10

0.3

0
0

30

60

90

120

150

180

12

15

18

21

24

R G - Ohms

Fig. 9. Dependence of Turn-Off

Energy on Ic

Fig. 10. Dependence of Turn-Off

Energy on Tem perature

27

30

2.7
R G = 3.3
VGE = 15V
VCE = 400V

2.1

R G = 3.3
VGE = 15V
VCE = 400V

2.4
2.1

E off - milliJoules

2.4

1.8
1.5
TJ = 125C

1.2
0.9
0.6

I C = 60A

1.8
1.5
1.2

I C = 30A

0.9
0.6

TJ = 25C

0.3

0.3

I C = 15A

0
15

20

25

30

35

40

45

50

55

60

25

35

I C - Amperes

45

55

65

75

85

95

Fig. 12. Dependence of Turn-Off

Sw itching Tim e on Ic
300

600

td(off)
tfi - - - - - -

500

TJ = 125C
VGE = 15V
VCE = 400V

450
400
350
300

I C = 15A

250

I C = 30A

I C = 60A

200

td(off)
tfi - - - - - -

275

Switching Time - nanosecond

550

105 115 125

TJ - Degrees Centigrade

Fig. 11. Dependence of Turn-Off

Sw itching Tim e on RG

Switching Time - nanosecond

I C - Amperes

2.7

E off - MilliJoules

I C = 15A

0.6

150
100

R G = 3.3
VGE = 15V
VCE = 400V

250
225
200

TJ = 125C

175
150
125
TJ = 25C

100
75

12

15

18

R G - Ohms

21

24

27

30

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

15

20

25

30

35

40

45

50

55

60

I C - Amperes

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

IXGH 40N60B2
IXGT 40N60B2
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Te m perature

Fig. 14. Gate Charge

15

td(off)
tfi - - - - - -

250

200
175

I C = 15A

150

I C = 30A

125

VCE = 300V
I C = 30A
I G = 10mA

12

R G = 3.3
VGE = 15V
VCE = 400V

225

VG E - Volts

Switching Time - nanosecond

275

I C = 60A

100
0

75
25

35

45

55

65

75

85

95

TJ - Degrees Centigrade

105 115 125

10

20

30

40

50

60

70

80

90

100

Q G - nanoCoulombs

Fig. 15. Capacitance

10000

Capacitance - p F

f = 1 MHz

C ies

1000

C oes
100

C res
10
0

10

15

20

25

V C E - Volts

30

35

40

Fig. 16. Maxim um Trans ient Therm al Res istance

0.45
0.4

R (th) J C - (C/W)

0.35
0.3
0.25
0.2
0.15
0.1
0.05
1

2003 IXYS All rights reserved

10

Pulse Width - milliseconds

100

1000

IXGH 40N60B2D1
IXGT 40N60B2D1
60
A

TVJ= 100C
nC VR = 300V

50
IF

30

1000

800
Qr
600

TVJ=150C
30

25

IF= 60A
IF= 30A
IF= 15A

40

IF= 60A
IF= 30A
IF= 15A

IRM
20
15

TVJ=100C

400

20

10

TVJ=25C

200

10
0

TVJ= 100C
VR = 300V

0
100

3 V

A/s 1000
-diF/dt

VF

Fig. 17. Forward current IF versus VF

Fig. 18. Reverse recovery charge Qr

versus -diF/dt

2.0

90

Kf
1.0

IRM

600 A/s
800 1000
-diF/dt

400

1.00

TVJ= 100C
IF = 30A

tfr
0.75

VFR
tfr

80

IF= 60A
IF= 30A
IF= 15A

200

Fig. 19. Peak reverse current IRM

versus -diF/dt

V
VFR
15

trr

1.5

20

TVJ= 100C
VR = 300V

ns

10

0.50

0.25

70
0.5

0.0

Qr

40

80

120 C 160

60

200

TVJ

400

600

800 1000
A/s

200

400

-diF/dt

Fig. 20. Dynamic parameters Qr, IRM

versus TVJ

Fig. 21. Recovery time trr versus -diF/dt

1
K/W

0.00
600 A/s
800 1000
diF/dt

Fig. 22. Peak forward voltage VFR and

tfr versus diF/dt
Constants for ZthJC calculation:
i
1
2
3

0.1
ZthJC

Rthi (K/W)

ti (s)

0.502
0.193
0.205

0.0052
0.0003
0.0162

0.01

0.001
0.00001

DSEP 29-06

0.0001

0.001

0.01

0.1

s
t

Fig. 23. Transient thermal resistance junction to case

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343