DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, 2 columns

M3D118

BYW95 series Fast soft-recovery controlled avalanche rectifiers

Product specication Supersedes data of December 1979 1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack Also available with preformed leads for easy insertion. DESCRIPTION

BYW95 series

Rugged glass SOD64 package, using a high temperature alloyed

2/3 page k (Datasheet)

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYW95A BYW95B BYW95C VR continuous reverse voltage BYW95A BYW95B BYW95C IF(AV) average forward current PARAMETER repetitive peak reverse voltage

 ,

construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

MAM104

CONDITIONS

MIN.

MAX. 200 400 600 200 400 600 3.00 V V V V V V A

UNIT

Ttp = 60 C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 65 C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6

1.25

IFRM IFSM

repetitive peak forward current non-repetitive peak forward current

Ttp = 60 C; see Fig.4 Tamb = 65 C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7

30 13 70

A A A

ERSM Tstg Tj

non-repetitive peak reverse avalanche energy storage temperature junction temperature

65 65

10 +175 +175

mJ C C

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYW95A BYW95B BYW95C IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 f = 1 MHz; VR = 0 V; see Fig.10 when switched from IF = 1 A to VR 30 V and dIF/dt = 1 A/s; see Fig.13 CONDITIONS IF = 5 A; Tj = Tj max; see Fig.8 IF = 5 A; see Fig.8 IR = 0.1 mA 300 500 700 MIN. TYP.

BYW95 series

MAX. 1.25 1.50 V V

UNIT

1 150 250

V V V A A ns

Cd dI R -------dt

diode capacitance maximum slope of reverse recovery current

85

pF A/s

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.11. For more information please refer to the General Part of associated Handbook. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 25 75 UNIT K/W K/W

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

GRAPHICAL DATA
MGC609

BYW95 series

MGC608

handbook, halfpage

handbook, halfpage

2.0

IF(AV) (A) 3

IF(AV) (A)

1.6

1.2 2 0.8 1 0.4

0 0 100 Ttp ( C)
o

0 200 0 100 Tamb ( C)

o

200

a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.

a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.11. Switched mode application.

Fig.2

Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

Fig.3

Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).

MGC606

handbook, full pagewidth

40

I FRM (A) = 0.05

30

20

0.1

0.2 10 0.5 1.0

0 10 2

10 1

10

10 2

10 3

tp (ms)

10 4

Ttp = 60 C; Rth j-tp = 25 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYW95 series

MGC607

handbook, full pagewidth

16

I FRM (A) = 0.05

12

0.1 8

0.2 4 0.5 1.0

0 10 2

10 1

10

10 2

10 3

tp (ms)

10 4

Tamb = 65 C; Rth j-a = 75 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MGC611

MGC575

handbook, halfpage

P (W)

a=3 2.5

1.57 1.42

handbook, halfpage

200

Tj ( C)
o

3 100 2

A 1

0 0 2 IF(AV) (A) 4

0 0 200 400 600 VR (V) 800

a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Solid line = VR.

Fig.6

Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

Dotted line = VRRM; = 0.5.

Fig.7

Maximum permissible junction temperature as a function of reverse voltage.

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYW95 series

MGC610

MGC574

handbook, halfpage

10

IF (A)

10 3 handbook, halfpage IR (A) 10

2

6 10 4

1 2

0 0 1 VF (V) 2

10 1 0 100 Tj ( C)
o

200

Dotted line: Tj = 175 C. Solid line: Tj = 25 C.

VR = VRRMmax.

Fig.8

Forward current as a function of forward voltage; maximum values.

Fig.9

Reverse current as a function of junction temperature; maximum values.

10 2 handbook, halfpage Cd (pF)

MGC605

handbook, halfpage

50 25

7 50 10

2 3 1 1 10 102 103
MGA200

VR (V)

f = 1 MHz; Tj = 25 C. Dimensions in mm.

Fig.10 Diode capacitance as a function of reverse voltage; typical values.

Fig.11 Device mounted on a printed-circuit board.

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYW95 series

handbook, full pagewidth

DUT +

IF (A) 0.5 1 t rr

10

25 V 50 0 0.25 0.5 IR (A) 1

MAM057

Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.

Fig.12 Test circuit and reverse recovery time waveform and definition.

IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR

MGC499

Fig.13 Reverse recovery definitions.

1996 Jun 07

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

PACKAGE OUTLINE

BYW95 series

handbook, full pagewidth

4.5 max

28 min

Dimensions in mm. The marking band indicates the cathode.

, 
5.0 max

a 1.35 max

28 min

MBC049

Fig.14 SOD64.

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

1996 Jun 07