ST13005 STB13005-1

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

s s s s

s s

MEDIUM VOLTAGE CAPABILITY NPN TRANSISTORS LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX -1)
1 2 3

APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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TO-220

I2PAK TO-262 (Suffix -1)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 75 -65 to 150 150 Uni t V V V A A A A W
o o

C C

January 1999

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THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 1.67
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 700V V CE = 700V V EB = 9 V I C = 10 mA 400 T ca se = 100 C
o

Min.

Typ .

Max. 1 5 1

Un it mA mA mA V

V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain

IC = 1 A IC = 2 A IC = 4 A IC = 1 A IC = 2 A IC = 1 A Group A Group B IC = 2 A IC = 2 A I B1 = -IB2 = 0.4 A V CC = 125 V

IB = 0.2 A IB = 0.5 A IB = 1 A IB = 0.2 A IB = 0.5 A VCE = 5 V 15 27 8 1.5 0.2 Tp = 30 s

0.5 0.6 1 1.2 1.6 32 45 40 3.0

V V V V

V BE(s at) h FE

VCE = 5 V

ts tf

RESISTIVE LO AD Storage Time Fall Time

s s

Pulsed: Pulse duration = 300s, duty cycle = 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

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Safe Operating Areas Derating Curve

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

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Inductive Fall Time Inductive Storage Time

Resistive Fall Time

Resistive Load Storage Time

Reverse Biased SOA

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Figure 1: Inductive Load Switching Test Circuit.

1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier

Figure 2: Resistive Load Switching Test Circuit.

1) Fast electronic switch 2) Non-inductive Resistor

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TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107

P011C
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TO-262 (I2PAK) MECHANICAL DATA

mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055

DIM.

C2

B2

L1 L2 D L
P011P5/E
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .

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