Vanderbilt University

Studies of the Spin Dynamics of Charge Carriers in

Semiconductors and their Interfaces

S. K. Singh, T. V. Shahbazyan, I. E. Perakis and

N. H. Tolk

Department of Physics and Astronomy

Vanderbilt University, Nashville, TN 37235

∗ Buffalo Consortium Meeting 11/4/00 ∗

Funded in part by DARPA/ONR
 Vanderbilt University

Objectives

✹ Measure Important Parameters in Magnetic

Semiconductors:

◆ Band-Offset : Using Internal Photo-Emission (IPE)

and SHG Techniques.
◆ Ultrafast Spin Dynamics: Time-Resolved
Photoluminescense and Reflectivity, Faraday
Rotation.
◆ Probing Electron-Hole Dynamics: Time-Dependent
Second Harmonic Generation (SHG).
✹ Develop Theoretical Models of Ultrafast Spin
Dynamics.
 Vanderbilt University

Vanderbilt Capabilities

◆ Series of Ultrafast, High-Power, Tunable Lasers:

FIR and UV OPAs (Optical Parameteric Amplifier)

Range: 0.06 – 6 eV Pulse Energy: 10 µJ
Rep. Rate: 1 KHz Pulse Width: 150 fs or 3.5 ps

Free Electron Laser

Range: 0.1 – 1 eV Pulse Energy: ~ 50 mJ
Rep. Rate: 30 Hz Pulse Width: 4 - 6 µs

Several Ti:Sapphire and Other Lasers

◆ 9 T Superconducting Magnet Having Four Optical

Windows.

◆ Fast Electronics, Optics, etc.

 Vanderbilt University

Band-Offset Measurements in Si/Si0.45Ge0.5

300 Photons
Si
Photo Signal (mV)

250

200

150
V Si0.45Ge0.55
100 0.95 eV
(100 nm)
50
1.12 eV ν
hν
0
1.2 1.25 1.3 1.35 1.4 1.45
Wavelength (microns) Si0.45Ge0.55
Si

• IPE is a sensitive technique to measure band offset

(within 10 meV).

Þ Can be used to measure band offsets in Magnetic

Semiconductors (e.g. InMnAs/GaMnSb)
 Vanderbilt University

Proposed Band-Offset Measurements in

III1-XMnXV /III-V based Semiconductor

CB
0.87 eV
0.8 eV
Holes
0.15 eV
Fermi Level
Electrons
0.4 eV 0.47 eV
VB

In1-XMnX As GaSb

• Band offsets can be measured as a function of

Magnetic field.
 Vanderbilt University

Proposed Lifetime Measurements of Spin-Polarized Carriers in

Magnetic Semiconductors (e.g. In1-XMnXAs/GaSb)

CB
K Create Photo-Excited
GaSb GaSb 0.8 eV Spin- Polarized Carriers in
InAs Quantum Well.
VB
K Probe Spin-Scattering
Mechanisms: Time-Resolved
σ+ Photoluminescense in
σ— Magnetic Field.
~ 0.5 eV
K Faraday Rotation

In1-XMnXAs K Study Role of Mn ion in

Spin Scattering
 Vanderbilt University

Theory: Electric-Field-Induced-SH (EFISH)

General Equation for SHG:

P (2ω χ (2 )
ω) = d,B E( ω)E( ω) + χ (2 )
d,S E( ω)E( ω) + χ q,B E(ω)∇ E(ω) +
(2 )

χ (d3,B) ε (ω ~ 0 ) E(ω)E(ω)

χ (d3,B) ε (ω ~ 0 ) E(ω)E(ω) : Electric − Field − Induced SH

ε (ω ~ 0 ) : Space Ch arg e Field at the Interface

E(ω): Electric Field of Fundamental Beam

 Vanderbilt University

System With Inversion Symmetry

Under Electric Dipole Approximation

P(2 ω) = χ ( 2 ) E(ω)E(ω)
Inversion

− P(2 ω) = χ (2 )
(−E(ω))(−E(ω))

χ (2 )
= 0 in Bulk

But not at surfaces or with static electric field

where symmetry is broken
 Vanderbilt University

Experimental Setup

PMT

UG-Filter
Prism
RG-Filter
Iris
Polarizers ω 2ω ≅ 3eV
Ti:Sapphire Laser Lenses
λ = 700-920 nm,
τp = 100 fs,
Pav = 400 mW

Sample
Rotation Table
(2ω ) 2 (ω )2
(t) ∝ χ + χ E(t) I
(2) (3)
I
 Vanderbilt University

Electron-Hole Dynamics at Si/SiO2 Interface

Electrons

SHG Signal (Counts/100 mSec)

e- 8000
O2
6000

1.1 eV 4000
1.5 eV Laser Blocked
Si 2000
9 eV
EDC
0
SiO2
0 100 200 300 400 500 600
Holes Tim e (Sec)

EDC Field Þ Charge Separation ( Carrier Injection)

§ Electrons trapped at Surface
§ New Charged Traps in Oxide due to Radiation
 Vanderbilt University

Comparison of SiO2 and ZrSiOx Oxides

SHG from Si-Dielectrics
1200

1000
SHG Intensity (a.u.)

800

600
• Qualitative difference
400
Si (100)-SiO2 in the shape of the
200 215 mW curves in SiO2 and
0
0 200 400 600 800
ZrSiOx :
1400

1200
Þ Difference in electron
and hole injection rate?
SHG Intensity (a.u.)

1000

800

600

400
Si (100)-ZrSiOx
200
137 mW
0
0 200 400 600 800

Time(second)
 Vanderbilt University

SHG measurements to probe electron-hole Dynamics in

Magnetic Semiconductor

Electrons
ν
hν
In0.94Mn0.06As 12 nm
GaSb 500 nm
GaAs 300 nm
ν
hν GaAs (100)

CB ν
hν K SHG measurements can
EF probe dynamic electric field
VB due to electron-hole
GaSb migration, induced by
In1-xMnxAs photons.
Holes
Þ Understand photo-induced
Koshihara et al., PRL 78, 4617 (1997) Ferromagnetism.
 Vanderbilt University

Summary

• Band-Offset : Internal Photo-Emission (IPE)

and SHG Techniques.
• Lifetime of Photo-Excited Spin-Polarized Carriers:
Faraday Rotation, Time-Resolved Photoluminescense
and Reflectivity.
• Probing Electron-Hole Dynamics: Time-Dependent
Second Harmonic Generation (SHG).

• Develop Theoretical Models of Ultrafast Spin

Dynamics.
 Vanderbilt University

Samples

• InAs/GaMnSb, InMnAs/GaMnSb : BO
• InAs/GaSb : BO, SHG
• InMnAs/GaSb : SHG
• GaSb/InMnAs/GaSb QW : LT

BO: Band Offset

LT: Life Time
SHG: Second Harmonic Generation