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Product specification
IRFZ48N
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 20 64 45 210 140 175 UNIT V V V A A A W C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.1 UNIT K/W K/W
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
UNIT V V V V V A A A A V m m
DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 8 TYP. 39 2200 500 200 18 35 45 30 3.5 4.5 7.5 MAX. 2900 600 270 85 19 37 26 85 60 45 UNIT S pF pF pF nC nC nC ns ns ns ns nH nH nH
ID = 50 A; VDD = 44 V; VGS = 10 V
VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
UNIT A A V V ns C
PD%
ID%
20
40
60
80 100 Tmb / C
120
140
160
180
20
40
60
80 100 Tmb / C
120
140
160
180
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
SOAX514
1000
ID / A
RDS(ON) = VDS/ID 100
tp = 1 us 10 us 100 us DC 1 ms
25
10
10
10 ms 100 ms 1
10 VDS / V
55
100
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 ID/A
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
1E+01
Zth / (K/W)
BUKX514-55
P D
tp
D=
tp T
40
Tj/C =
175
25
1E-03 1E-07
1E-05
1E-03 t/s
1E-01
1E+01
5 VGS/V
16 10
8 7.5
VGS/V =
6.5 60 6 40 5.5
25 20 15 10
20 5 0 4.5 4 0 2 4 VDS/V 6 8 10
5 0 0 20 40 60 80 100
ID/A
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
2.5
BUK959-60
4 3.5
Thousands (pF)
1.5
0.5 -100
-50
50 Tmb / degC
100
150
200
0 0.01
0.1
VDS/V
10
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12 VGS/V 10 VDS = 14V 8 VDS = 44V
1
2
0 -100
-50
50 Tj / C
100
150
200
10
20
30 QG/nC 40
50
60
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Sub-Threshold Conduction
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS
100 IF/A 80
1E-01
1E-03
1E-04
20
1E-05
0
1E-06
0.2
0.4
1.2
1.4
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
WDSS%
+
RD VDS VGS 0 RG T.U.T.
VDD
20
40
60
80
140
160
180
+
L VDS VGS 0 RGS T.U.T. R 01 shunt
VDD
-ID/100
Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
3,7 2,8
5,9 min
15,8 max
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,6 2,4
February 1999
Rev 1.000
Philips Semiconductors
Product specification
IRFZ48N
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
February 1999
Rev 1.000
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