Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Product Specification
PowerMOS transistor
BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -200A 14 10 56 125 175 175 MAX. 200 200 30 -200B 13 9 52 UNIT V V V A A A W C C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.2 UNIT K/W K/W
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 C VDS = 200 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK455-200A BUK455-200B ID = 7 A MIN. 200 2.1 TYP. 3.0 1 0.1 10 0.2 0.22 MAX. 4.0 10 1.0 100 0.23 0.28 UNIT V V A mA nA
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 7 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 30 V; RGS = 50 ; Rgen = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 6.0 TYP. 8.4 1400 190 55 18 35 85 35 3.5 4.5 7.5 MAX. 1750 250 80 30 60 120 50 UNIT S pF pF pF ns ns ns ns nH nH nH
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
PD%
10
BUKx55-lv
0.1
0.01
20
40
60
80 100 Tmb / C
120
140
160
180
0.001 1E-07
30
5 10
4
0 20 40 60 80 100 Tmb / C 120 140 160 180
10 12 VDS / V
14
16
18
20
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
ID / A
VD ID S/
100
BUK455-200A,B A B tp = 10 us 100 us
1.0 0.8
10
RD
O S(
N)
0.6
DC 1 1 ms 10 ms 100 ms
12
16 ID / A
20
24
28
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
28 24 20 16 12 8 4 0
ID / A
BUK455-200A
4
VGS(TO) / V max.
typ. 3 min. 2
Tj / C =
150
25
1
4 VGS / V
10
-60
-20
20
60 Tj / C
100
140
180
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A SUB-THRESHOLD CONDUCTION
15
gfs / S
BUK455-200A
1E-01
1E-02
10
1E-03
2%
typ
98 %
1E-04
5
1E-05
1E-06
12 16 ID / A
20
24
28
2 VGS / V
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
10000
C / pF
BUK4y5-200
1000
Ciss
-60
-20
20
60 Tj / C
100
140
180
10
20 VDS / V
40
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
12 10 8 6 4
VGS / V
BUK455-200
WDSS%
VDS / V =40
160
1 0 0 10 20 QG / nC 30
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 14 A; parameter VDS
IF / A BUK455-200A
30
+
L
20 Tj / C = 150 10 25
VDD
-ID/100
0 0 1 VSDS / V 2
Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3,7 2,8
5,9 min
15,8 max
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,6 2,4
August 1996
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
August 1996
Rev 1.100
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.