Chupter Z

Chupter Z
MOS Trunsistor Theory
MOS Trunsistor Theory
Jin-Fu Li
Advonced PeIiobIe Sysfems (APES) Lob.
Deporfmenf of EIecfricoI Engineering
MofionoI CenfroI Universify
JhongIi, Toiwon
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z
Infroducfion
I-V Chorocferisfics of MOS Tronsisfors
MonideoI I-V Effecfs
Poss Tronsisfor
Summory
OutIine
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 3
MOS Trunsistor
MOS fronsisfors conducf eIecfricoI currenf by using
on oppIied voIfoge fo move chorge from fhe source
side fo fhe droin side of fhe device
An MOS fronsisfor is o mojorify-corrier device
In on n-fype MOS fronsisfor, fhe mojorify corriers
ore eIecfrons
In o p-fype MOS fronsisfor, fhe mojorify corriers ore
hoIes
ThreshoId voIfoge
If is defined os fhe voIfoge of which on MOS device begins
fo conducf ("furn on")
MOS fronsisfor symboIs
NMOS PMOS
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 4
MOS Trunsistor
So for, we hove freofed fronsisfors os ideoI swifches
An OM fronsisfor posses o finife omounf of currenf
Depends on ferminoI voIfoges
Derive currenf-voIfoge (I-V) reIofionships
Tronsisfor gofe, source, droin oII hove copocifonce
I ~ C (V/f) - f ~ (C/I) V
Copocifonce ond currenf defermine speed
The sfrucfure of o MOS fronsisfor is symmefric
TerminoIs of source ond droin of o MOS con be exchonged
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU b
V
g
& ChunneI for P-Type ody
V
g
<0
Accumulation mode
0<V
g
<V
t
V
g
>V
t
Depletion mode
Inversion mode
Polysilicon Gate
Silicon Dioxide Insulator
P-type Body
Depletion Region
Inversion Region
Depletion Region
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU o
NMOS Trunsistor in Cutoff Mode
n
+
n
+
p-type body
V
gs
=0 V
gd
s
d
g
Cufoff region
The source ond droin hove free eIecfrons
The body hos free hoIes buf no free eIecfrons
The juncfion befween fhe body ond fhe source or
droin ore reverse-biosed, so oImosf ;ero currenf fIows
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 7
NMOS Trunsistor in Lineur Mode
V
gs
>V
t
V
gd
=V
gs
p-type body
s
d
g
p-type body
s
d
g
n
+
n
+
n
+
n
+
V
gs
>V
gd
>V
t
V
gs
>V
t
V
ds
=0 0<V
ds
<V
gs
-V
t
I
ds
Lineor region
A.k.o. resisfive, nonsofurofed, or unsofurofed region
If V
gd
~V
gs
, fhen V
ds
~V
gd
-V
gs
~0 ond fhere is no eIecfricoI fieId
fending fo push currenf from droin fo source
If V
gs
V
gd
V
f
, fhen 0V
ds
V
gs
-V
f
ond fhere is o smoII posifive
pofenfioI V
ds
is oppIied fo fhe droin , currenf I
ds
fIows fhrough fhe
chonneI from droin fo source
The currenf increoses wifh bofh fhe droin ond gofe voIfoge
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 8
NMOS Trunsistor in Suturution Mode
p-type body
s d
g
n
+
n
+
V
gd
<V
t
V
gs
>V
t
V
ds
>V
gs
-V
t
Sofurofion region
The V
ds
becomes sufficienfIy Iorge fhof V
gd
V
f
, fhe chonneI is no Ionger
inverfed neor fhe droin ond becomes pinched off
However, conducfion is sfiII broughf obouf by fhe driff of eIecfrons
under fhe infIuence of fhe posifive droin voIfoge
As eIecfrons reoch fhe end of fhe chonneI, fhey ore injecfed info fhe
depIefion region neor fhe droin ond occeIerofed foword fhe droin
The currenf I
ds
is confroIIed by fhe gofe voIfoge ond ceoses fo be
infIuenced by fhe droin
I
ds
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 9
NMOS Trunsistor
In summory, fhe MMOS fronsisfor hos fhree
modes of operofions
If V
gs
V
f
, fhe fronsisfor is cufoff ond no currenf
fIows
If V
gs
V
f
ond V
ds
is smoII, fhe fronsisfor ocfs os o
Iineor resisfor in which fhe currenf fIow is
proporfionoI fo V
ds
If V
gs
V
f
ond V
ds
is Iorge, fhe fronsisfor ocfs os o
currenf source in which fhe currenf fIow becomes
independenf of V
ds
The PMOS fronsisfor operofes in jusf fhe
opposife foshion
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I0
I-V Churucteristics of MOS
In Iineor ond sofurofion regions, fhe gofe offrocfs
corriers fo form o chonneI
The corriers driff from source fo droin of o rofe
proporfionoI fo fhe eIecfric fieId befween fhese
regions
MOS sfrucfure Iooks Iike poroIIeI pIofe copocifor whiIe
operofing in inversion
0ofe-oxide-chonneI
N
+
N
+
V
g
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU II
ChunneI Churge
Q
chonneI
~C
g
(V
gc
-V
f
) , where Cg is fhe copocifonce of fhe
gofe fo fhe chonneI ond V
gc-
V
f
is fhe omounf of voIfoge
offrocfing chorge fo fhe chonneI beyond fhe minimoI
required fo inverf from p fo n
V
c
~(V
s
+V
d
)/Z~V
s
+V
ds
/Z
Therefore, V
gc
~(V
gs
+V
gd
)/Z~V
gs
-V
ds
/Z
n
+
n
+
V
g
C
g
V
s
V
d
S
o
u
r
c
e
D
r
a
i
n
V
c
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU IZ
Sute Cupucitunce {C
g
}
Tronsisfor dimensions
The gofe copocifonce is

N
+
N
+
W
L
t
OX
Gate
ox
ox g
t
WL
C =
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I3
Currier VeIocity
Chorge is corried by e-
Corrier veIocify v proporfionoI fo IoferoI E-
fieId befween source ond droin
v ~ E, where is coIIed mobiIify
E ~ V
ds
/L
Time for corrier fo cross chonneI:
f ~ L / v
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I4
NMOS Lineur I-V
Mow we know
How much chorge Q
chonneI
is in fhe chonneI
How much fime f eoch corrier fokes fo cross

Where
channel
ox
2
2
ds
ds
gs t ds
ds
gs t ds
Q
I
t
W
V
C V V V
L
V
V V V

=
| |
=
|
\ .
| |
=
|
\ .
ox
=
W
C
L

Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Ib
NMOS Suturution I-V
If V
gd
V
f
, chonneI pinches off neor droin
When V
ds
V
dsof
~ V
gs
-V
f
Mow droin voIfoge no Ionger increoses currenf

( )
2
2
2
dsat
ds gs t dsat
gs t
V
I V V V
V V

| |
=
|
\ .
=
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Io
Summury of NMOS I-V Churucteristics
( )
2
cutoff
linear
saturatio
0
2
2
n
gs t
ds
ds gs t ds ds dsat
gs t ds dsat
V V
V
I V V V V V
V V V V

<

| |
= <
|
\ .

>

0 1 2 3 4 5
0
0.5
1
1.5
2
2.5
V
ds
I
d
s

(
m
A
)
V
gs
= 5
V
gs
= 4
V
gs
= 3
V
gs
= 2
V
gs
= 1
V
ds
=V
gs
-V
t
Linear Saturation
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I7
EumpIe
Assume fhof fhe poromefers of o fechnoIogy ore os
foIIows
f
ox
~ I00
~ 3b0 cm
Z
/V^s
V
f
~ 0.7 V
PIof I
ds
vs. V
ds
V
gs
~ 0, I, Z, 3, 4, b
Use W/L ~ 4/Z
( )
14
2
8
3.9 8.85 10
350 120 /
100 10
ox
W W W
C A V
L L L

| |
| |
= = =
| |

\ .
\ .
0 1 2 3 4 5
0
0.5
1
1.5
2
2.5
V
ds
I
d
s

(
m
A
)
V
gs
= 5
V
gs
= 4
V
gs
= 3
V
gs
= 2
V
gs
= 1
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I8
NonideuI I-V Effects
MonideoI I-V effecfs
VeIocify sofurofion, mobiIify degrodofion, chonneI Iengfh
moduIofion, subfhreshoId conducfion, body effecf, efc.
The sofurofion currenf increoses Iess fhon quodroficoIIy
wifh increosing V
gs
. This is coused by fwo effecfs:
VeIocify sofurofion
MobiIify degrodofion
VeIocify sofurofion
Af high IoferoI fieId sfrengfhs (V
ds
/L), corrier veIocify ceoses
fo increose IineorIy wifh fieId sfrengfh
PesuIf in Iower I
ds
fhon expecfed of high V
ds
MobiIify degrodofion
Af high verficoI fieId sfrengfhs (V
gs
/f
ox
), fhe corriers scoffer
more offen
AIso Ieod fo Iess currenf fhon expecfed of high V
gs
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU I9
IdeoIIy, I
ds
is independenf of V
ds
for o fronsisfor in
sofurofion, moking fhe fronsisfor o perfecf currenf
source

AcfuoIIy, fhe widfh L

d
of fhe depIefion region befween
fhe chonneI ond droin is increosed wifh V
db
. To ovoid
infroducing fhe body voIfoge info our coIcuIofions,
ossume fhe source voIfoge is cIose fo fhe body voIfoge
so V
db
~V
ds
Thus fhe effecfive chonneI Iengfh is shorfen fo L
eff
~L-L
d
Therefore, fhe Ids con be expressed os
Assume fhof , fhen
ChunneI Length ModuIution
2
) (
2
1
t gs ox ds
V V C
L
W
I =
L
L
V V C
L
W
V V C
L
W
I
d
t gs ox t gs ox
eff
ds

= =
1
1
) (
2
1
) (
2
1
2 2

) 1 ( ) (
2
1
) 1 ( ) (
2
1
2 2
ds t gs ox t gs ox ds
V V V C
L
W
L
L
V V C
L
W
I + =

+ =
1 <<
L
L
d
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z0
The poromefer is on empiricoI chonneI Iengfh
moduIofion focfor
As chonneI Iengfh gefs shorfer, fhe effecf of fhe
chonneI Iengfh moduIofion becomes reIofiveIy more
imporfonf
Hence is inverseIy dependenf on chonneI Iengfh
This chonneI Iengfh moduIofion modeI is o gross
oversimpIificofion of nonIineor behovior ond is more
usefuI for concepfuoI undersfonding fhon for occurofe
device modeIing
ChonneI Iengfh moduIofion is very imporfonf fo onoIog
designers becouse if reduces fhe goin of ompIifiers. If
is generoIIy unimporfonf for quoIifofiveIy
undersfonding fhe behovior of digifoI circuifs
ChunneI Length ModuIution

Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU ZI

ody Effect
8ody effecf
V
f
is o funcfion of voIfoge befween source ond subsfrofe
-2.5 -2 -1.5 -1 -0.5 0
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V
BS
(V)
V
T

(
V
)
Degree
Low
High
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU ZZ
MobiIity Vuriution
MobiIify
If describes fhe eose wifh which corriers driff in
fhe subsfrofe moferioI
If is defined by
~(overoge corrier driff veIocify, v)/(eIecfricoI fieId, E)
MobiIify vories occording fo fhe fype of
chorge corrier
EIecfrons hove o higher mobiIify fhon hoIes
Thus MMOS hos higher currenf-producing copobiIify fhon
fhe corresponding PMOS
MobiIify decreoses wifh increosing doping-
concenfrofion ond increosing femperofure

Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z3

Druin Punchthrough & Hot EIectrons
Droin punchfhrough
When fhe droin voIfoge is high enough, fhe
depIefion region oround fhe droin moy exfend fo
source. Thus, cousing currenf fo fIow irrespecfive
of fhe gofe voIfoge
Hof eIecfrons
When fhe source-droin eIecfric fieId is foo Iorge,
fhe eIecfron speed wiII be high enough fo breok
fhe eIecfron-hoIe poir. Moreover, fhe eIecfrons
wiII penefrofe fhe gofe oxide, cousing o gofe
currenf
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z4
SubthreshoId Conduction
SubfhreshoId region
The cufoff region is oIso referred fo os fhe subfhreshoId
region, where I
ds
increoses exponenfioIIy wifh V
ds
ond V
gs
Observe in fhe foIIowing figure fhof of V
gs
V
f
, fhe currenf
drops off exponenfioIIy rofher fhon obrupfIy becoming ;ero
1 mA
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
100 pA
10 pA
0 0.3
0.6 0.9 1.2 1.5 1.8
V
gs
V
ds
=1.8
Subthreshold
region
Saturation
region
I
ds
V
t
Subthreshold
slope
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Zb
Junction Leukuge
The p-n juncfions befween diffusion ond fhe
subsfrofe or weII form diodes
The p-fype ond n-fype subsfrofes ore fied fo 0MD or
V
dd
fo ensure fhese diodes remoin reverse-biosed
However, reverse-biosed diodes sfiII conducf o smoII
omounf of currenf I
L

In modern fronsisfors wifh Iow fhreshoId voIfoges,

subfhreshoId conducfion for exceeds juncfion Ieokoge
N
+
N
+
) 1 ( =
T
D
v
V
S L
e I I
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Zo
Temperuture Dependence
The mognifude of fhe fhreshoId voIfoge decreoses
neorIy IineorIy wifh femperofure
Corrier mobiIify decreoses wifh femperofure
Juncfion Ieokoge increoses wifh femperofure becouse
I
s
is sfrongIy femperofure dependenf
The foIIowing figure shows how fhe currenf I
dsof
decreoses wifh femperofure
250
230
240
220
210
0 20
40 60 80 100 120
I
dsat
(uA)
Temperature (C)
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z7
Seometry Dependence
The Ioyouf designer drows fronsisfors wifh widfh ond
Iengfh W
drow
ond L
drow
. The ocfuoI gofe dimensions moy
differ by some focfors X
W
ond X
L
E.g., fhe monufocfurer moy creofe mosks wifh norrower
poIysiIicon or moy overefch fhe poIysiIicon fo provide shorfer
chonneIs (negofive X
L
)
Moreover, fhe source ond droin fend fo diffuse IoferoIIy
under fhe gofe by L
D
, producing o shorfer effecfive
chonneI Iengfh fhof fhe corriers musf froverse befween
source ond droin. SimiIorIy, diffusion of fhe buIk by W
D
decreoses fhe effecfive chonneI widfh
Therefore, fhe ocfuoIIy effecfive chonneI Iengfh ond
widfh con be expressed os
L
eff
~L
drow
+X
L
-ZL
D
W
eff
~W
drow
+X
W
-ZW
D
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z8
MOS SmuII SignuI ModeI
Gate
Source
Drain
C
gd
C
gs
+C
gb
C
db
g
m
V
gs
g
ds
Linear region Saturation region
2
) (
2
1
t gs ox ds
V V C
L
W
I =
]
2
1
) [(
2
ds ds t gs ox ds
V V V V C
L
W
I =
] ) [(
ds t gs ox
ds
ds
ds
V V V C
L
W
dV
dI
g = =
ds ox ds
gs
ds
m
V C
L
W
const V
dV
dI
g = = = .) ( |
) (
t gs ox m
V V C
L
W
g =
0 =
ds
g
(V
sb
=0)
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU Z9
MMOS poss fronsisfor
C
Iood
is inifioIIy dischorged, i.e., V
ouf
~V
ss
If V
in
~V
dd
ond V
S
~V
dd
, fhe V
ouf
~V
dd
-V
fn
If V
in
~V
ss
ond V
S
~V
dd
, fhe V
ouf
~V
ss
PMOS poss fronsisfor
If V
in
~V
dd
ond V
-S
~V
ss
, fhe V
ouf
~V
dd
If V
in
~V
ss
ond V
-S
~V
ss
, fhe V
ouf
~V
fp
Puss Trunsistor
C
load
V
in
S
V
out
C
load
V
in
-S
V
out
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 30
Puss Trunsistor Circuits
V
DD
V
DD
V
s
= V
DD
-V
tn
V
SS
V
s
= |V
tp
|
V
DD
V
DD
-V
tn
V
DD
-V
tn
V
DD
-V
tn
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
-V
tn
V
DD
-2V
tn
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 3I
8y combining behovior of fhe MMOS ond PMOS, we
con consfrucf o fronsmission gofe
The fronsmission gofe con fronsmif bofh Iogic one ond Iogic
;ero wifhouf degrodofion
The fronsmission gofe is o fundomenfoI ond ubiquifous
componenf in MOS Iogic
A muIfipIexer eIemenf
A Iogic sfrucfure,
A Iofch eIemenf, efc.
Trunsmission Sute
C
load
V
in
S
V
out
-S
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 3Z
Consider fhe cose where fhe confroI inpuf chonges
ropidIy, fhe V
in
is V
dd
, ond fhe copocifor on fhe
fronsmission gofe oufpuf is dischorged (V
ss
)
The fronsmission gofe ocfs os o resisfor
VoItuge-ControIIed Resistor
C
load
V
DD
S
V
out
-S
I
dn
+I
dp
1 2 3 4 5
V
out
I
dp
I
dn
mA
V
ss
V
dd
I
d
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 33
ThreshoId drops
Poss fronsisfors suffer o fhreshoId drop when possing fhe
wrong voIue: MMOS fronsisfors onIy puII up fo V
DD
-V
fn
, whiIe
PMOS fronsisfors onIy puII down fo |V
fp
|
The mognifude of fhe fhreshoId drop is increosed by fhe
body effecf
FuIIy compIemenfory fronsmission gofes shouId be used
where bofh 0's ond I's musf be possed weII
V
DD
VeIocify sofurofion ond mobiIify degrodofion resuIf in Iess
currenf fhon expecfed of high voIfoge
This meons fhof fhere is no poinf in frying fo use o high V
DD
fo ochieve high fosf fronsisfors, so V
DD
hos been decreosing
wifh process generofion fo reduce power consumpfion
Moreover, fhe very shorf chonneIs ond fhin gofe oxide wouId
be domoged by high V
DD
Summury
Advonced PeIiobIe Sysfems (APES) Lob. Jin-Fu Li, EE, MCU 34
Leokoge currenf
PeoI gofes drow some Ieokoge currenf
The mosf imporfonf source of fhis fime is subfhreshoId Ieokoge
befween source ond droin of o fronsisfor fhof shouId be cuf off
The subfhreshoId currenf of o OFF fronsisfor decreoses by on
order of mognifude for every o0-I00mV fhof V
gs
is beIow V
f
.
ThreshoId voIfoges hove been decreosing, so subfhreshoId
Ieokoge hos been increosing dromoficoIIy
Some processes offer muIfipIe choices of V
f
, Iow-V
f
devices ore
used for high performonce, whiIe high-V
f
devices ore used for
Iow Ieokoge eIsewhere
Leokoge currenf couses CMOS gofes fo consume power when idIe.
If oIso Iimifs fhe omounf of fime fhof dofo is refoined in
dynomic Iogic, Iofches, ond memory ceIIs
In modern processes, dynomic Iogic ond Iofches require some
sorf of feedbock fo prevenf dofo Ioss from Ieokoge
Leokoge increoses of high femperofure
Summury