Simon Fraser University

Mechatronic Systems Engineering

Final Exam for ENSC 331/895: Introduction to MEMS Instructor: Behraad Bahreyni
15 August 2011

Time: 150 minutes

Name:________________________ Student number:________________

To verify identity, each candidate should be prepared to produce, upon request, his/her Simon Fraser University Library/IO card. All writing must be submitted with this examination booklet (notes, drafts, calculations, etc.). This booklet must not be torn or mutilated in any way, and must not be taken from the examination room. Caution: In accordance with the University's Academic Honesty Policy (T10.02), academic dishonesty in any form will not be tolerated. Prohibited acts include, but are not limited to, the following: making use of any books, papers, electronic devised or memoranda, other than those authorized by the examiners; speaking or communicating with other students who are writing examinations; copying from the work of other candidates; purposely exposing written papers to the view of other candidates.

Question 1 2 3 4 5 6 Total:

Mark / 15 / 20 / 20 / 15 / 15 / 15 / 100

Simon Fraser University ENSC331/895: Introduction to MEMS Final exam 15 August 2011

Name: _______________________________ Student number: _______________________ Time: 150 minutes Page: 2/15

Deal-Groove model for oxidation rate of silicon: Deal-Groove rate constants for oxidation of (100) silicon wafers A (m) B (m2/hr) Temperature (C) Dry Wet Dry Wet 900 0.423 1.136 0.004 0.172 1000 0.232 0.424 0.010 0.316 1100 0.139 0.182 0.024 0.530 Deal-Groove rate constants for oxidation of (111) silicon wafers A (m) B (m2/hr) Temperature (C) Dry Wet Dry Wet 900 0.252 0.676 0.004 0.172 1000 0.138 0.252 0.010 0.316 1100 0.083 0.109 0.024 0.530 Doping profiles and surface density of dopants (x is the depth into the wafer): Diffusion with constant concentration of dopants at the surface Diffusion with constant number of dopants at the surface Doping with implantation ( ( ( ) ) )

(hr) Dry 2.79 0.616 0.174 Wet 0.169 0.036 0.010

(hr) Dry 1.72 0.391 0.114 Wet 0.102 0.022 0.006

Mean free path of gas molecules

Thickness of spun photoresist

Resolution in proximity and contact printing

Angle between <

> and <

> directions

Diffusion constant

Boltzmann constant Thermal conductivity of silicon: Mass density of silicon: Thermal expansion coefficient of silicon: 1 atmosphere = 760 Torr = 101 325 Pa

Simon Fraser University ENSC331/895: Introduction to MEMS Final exam 15 August 2011

Name: _______________________________ Student number: _______________________ Time: 150 minutes Page: 3/15

Static deflections of beams: Boundary condition Load Clamped-Free Clamped-Free Clamped-Clamped Clamped-Clamped Clamped-Guided Strain at the top surface of bent beam: ( )

Deflection equation

Spring constant

Electrostatic transduction: Electrostatic force: Output current from a variable capacitor: Capacitance of a parallel plate capacitor: Magnetic transduction: Lorentz force on a moving charge: Lorentz force on a current carrying conductor: Piezoelectric transduction: Conversion of strain to charge: where is the electrode area, is the electric field, strain along the filed, for strain normal to the field. Thermal transduction: Steady state temperature distribution due to conduction: Piezoresistivity: is the distance between the electrodes, is the relative permittivity. for

Output voltage of a Wheatstone bridge:

Effective Youngs modulus of silicon: [ where =cos , ]

=cos , and =cos where , , and are the direction angles with respect to xyz axes and , , and .