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2SA1943

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1943
Power Amplifier Applications
Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Absolute Maximum Ratings (Ta = 25C)


Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.5 150 150 55 to 150 Unit V V V A A W

JEDEC
C C

2-21F1A

JEITA TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-09

2SA1943
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Min 230 55 35 Typ. 60 1.5 1.0 30 360 Max 5.0 5.0 160 3.0 1.5 V V MHz pF Unit A A V

Note: hFE (1) classification

R: 55 to 110, O: 80 to 160

Marking

Part No. (or abbreviation code) TOSHIBA

2SA1943
Lot No.

JAPAN
A line indicates lead (Pb)-free package or lead (Pb)-free finish.

2006-11-09

2SA1943

IC VCE
20 Common emitter Tc = 25C 20 Common emitter VCE = 5 V

IC VBE

IC (A)

12

250

IC (A)
100

16

800 600 400 200

16

12

Collector current

150 8 IB = 10 mA 4

Collector current

50 40 30 20

Tc = 100C

25

25 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0

Collector-emitter voltage

VCE

(V)

Base-emitter voltage

VBE

(V)

VCE (sat) IC
Collector-emitter saturation voltage VCE (sat) (V) hFE
3 1 0.3 Tc = 100C 0.1 25 Common emitter IC/IB = 10 0.001 0.01 0.1 1 10 100 25 300 100 30 10 3 0.01 Tc = 100C 25 25 Common emitter VCE = 5 V 0.1

hFE IC

DC current gain

10

100

Collector current IC (A)

Collector current IC (A)

Safe Operating Area


50 30 IC max (pulsed)* IC max (continuous) 10 1 ms* 10 ms* 100 ms*

IC (A)

5 3 DC operation Tc = 25C 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C 0.1 Curves must be derated linearly with increase in 0.05 temperature. 0.03 2 10 30

Collector current

VCEO max 100 300 1000

Collector-emitter voltage

VCE

(V)

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2SA1943

rth tw
10

rth

(C/W)

Transient thermal resistance

Infinite heat sink

0.1 Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.01 0.001

0.01

0.1

10

100

1000

Pulse width

tw

(s)

2006-11-09

2SA1943

RESTRICTIONS ON PRODUCT USE


The information contained herein is subject to change without notice.

030619EAA

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

2006-11-09

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