Nano

SATHYABAMA UNIVERSITY
(Established under section 3 of UGC Act, 1956)
Jeppiaar Nagar, Rajiv Gandhi Salai, Chennai - 119.
SYLLABUS MASTER OF TECHNOLOGY PROGRAMME IN NANOTECHNOLOGY (4 SEMESTERS) REGULATIONS 2010
FACULTY OF ELECTRONICS ENGINEERING
SATHYABAMA UNIVERSITY REGULATIONS 2010

Effective from the academic year 2010-2011 and applicable to the students admitted to the Master of Engineering / Technology / Architecture /Science (Four Semesters) 1. Structure of Programme 1.1 Every Programme will have a curriculum with syllabi consisting of theory and practical such as: (i) (ii) (iii) (iv) 1.2 General core courses like Mathematics Core course of Engineering / Technology/Architecture / Science Elective course for specialization in related fields Workshop practice, Computer Practice, laboratory Work, Industrial Training, Seminar Presentation, Project Work, Educational Tours, Camps etc.
Each semester curriculum shall normally have a blend of lecture course not exceeding 7 and practical course not exceeding 4.
2.
1.3 The medium of instruction, examinations and project report will be English. Duration of the Programme A student is normally expected to complete the M.E/M.Tech./M.Arch/M.Sc Programme in 4 semesters but in any case not more than 8 consecutive semesters from the time of commencement of the course. The Head of the Department shall ensure that every teacher imparts instruction as per the number of hours specified in the syllabus and that the teacher teaches the full content of the specified syllabus for the course being taught.
3.
Requirements for Completion of a Semester A candidate who has fulfilled the following conditions shall be deemed to have satisfied the requirement for completion of a semester. 3.1 3.2 He/She secures not less than 90% of overall attendance in that semester. Candidates who do not have the requisite attendance for the semester will not be permitted to write the University Exams.
4.
Examinations The examinations shall normally be conducted between October and December during the odd semesters and between March and May in the even semesters. The maximum marks for each theory and practical course (including the project work and Viva Voce examination in the Fourth Semester) shall be 100 with the following breakup. (i) Theory Courses
Internal Assessment : University Exams : 20 Marks 80 Marks
(ii)
Practical courses
Internal Assessment : University Exams : - 100 Marks
M.TECH (NANO TECHNOLOGY)
REGULATIONS 2010
5.
Passing requirements (i) A candidate who secures not less than 50% of total marks prescribed for the course (For all courses including Theory, Practicals and Project work) with a minimum of 40 marks out of 80 in the University Theory Examinations, shall be declared to have passed in the Examination. If a candidate fails to secure a Pass in a particular course, it is mandatory that he/she shall reappear for the examination in that course during the next semester when examination is conducted in that course. However the Internal Assessment marks obtained by the candidate in the first attempt shall be retained and considered valid for all subsequent attempts.
(ii)
6.
Eligibility for the Award of Degree A student shall be declared to be eligible for the award of the M.E/M.Tech./M.Arch./M.Sc degree provided the student has successfully completed the course requirements and has passed all the prescribed examinations in all the 4 semesters within the maximum period specified in clause 2.
7.
Award of Credits and Grades All assessments of a course will be done on absolute marks basis. However, for the purpose of reporting the performance of a candidate, Letter Grades will be awarded as per the range of total marks (out of 100) obtained by the candidate as given below:
RANGE OF MARKS FOR GRADES

Range of Marks 90-100 80-89 70-79 60-69 50-59 00-49 ABSENT Grade A++ A+ B++ B+ C F W Grade Points (GP) 10 9 8 7 6 0 0
CUMULATIVE GRADE POINT AVERAGE CALCULATION

The CGPA calculation on a 10 scale basis is used to describe the overall performance of a student in all courses from first semester to the last semester. F and W grades will be excluded for calculating GPA and CGPA.
CGPA = i C i GP i i Ci
where Ci - Credits for the subject

GP i - Grade Point for the subject
i - Sum of all subjects successfully cleared during all the semesters

M.TECH (NANO TECHNOLOGY) ii REGULATIONS 2010
8.
Classification of the Degree Awarded 1 A candidate who qualifies for the award of the Degree having passed the examination in all the courses of all the semesters in his/her first appearance within a maximum period of 4 consecutive semesters after commencement of study securing a CGPA not less than 9.0 shall be declared to have passed the examination in First Class Exemplary. A candidate who qualifies for the award of the Degree having passed the examination in all the courses of all the semesters in his/her first appearance within a maximum period of 4 consecutive semesters after commencement of study, securing a CGPA not less than 7.5 shall be declared to have passed the examination in First Class with Distinction. A candidate who qualifies for the award of the Degree having passed the examination in all the courses of all the semesters within a maximum period of 4 consecutive semesters after commencement of study securing a CGPA not less than 6.0 shall be declared to have passed the examination in First Class. All other candidates who qualify for the award of the Degree having passed the examination in all the courses of all the 4 semesters within a maximum period of 8 consecutive semesters after his/her commencement of study securing a CGPA not less than 5.0 shall be declared to have passed the examination in Second Class. A candidate who is absent in semester examination in a course/project work after having registered for the same, shall be considered to have appeared in that examination for the purpose of classification of degree. For all the above mentioned classification of Degree, the break of study during the programme, will be counted for the purpose of classification of degree. A candidate can apply for revaluation of his/her semester examination answer paper in a theory course, within 1 week from the declaration of results, on payment of a prescribed fee along with prescribed application to the Controller of Examinations through the Head of Department. The Controller of Examination will arrange for the revaluation and the result will be intimated to the candidate concerned through the Head of the Department. Revaluation is not permitted for practical courses and for project work.
2.
3.
Final Degree is awarded based on the following :

CGPA 9.0 CGPA 7.50 < 9.0 CGPA 6.00 < 7.50 CGPA 5.00 < 6.00 First Class - Exemplary First Class with Distinction First Class Second Class
Minimum CGPA requirements for award of Degree is 5.0 CGPA. 9. Discipline Every student is required to observe disciplined and decorous behaviour both inside and outside the University and not to indulge in any activity which will tend to bring down the prestige of the University. If a student indulges in malpractice in any of the University theory / practical examination, he/she shall be liable for punitive action as prescribed by the University from time to time. 10. Revision of Regulations and Curriculum The University may revise, amend or change the regulations, scheme of examinations and syllabi from time to time, if found necessary.
iii
REGULATIONS 2010
M.Tech - NANOTECHNOLOGY REGULATIONS 2010 CURRICULUM SEMESTER I

Sl.No. THEORY 1 2 3 4 5 PRACTICAL 6 SECX6503 EDA Tools Laboratory 0 0 4 2 12 SECX5016 SECX5039 SECX5044 SECX5019 SECX5045 Transforms and Probability for Electronics Engineering Basics of Nano Technology Nano Electronics MOS Device Modeling NanoCMOS Circuit and Physical Design 3 3 3 3 3 1 0 0 0 0 0 0 0 0 0 4 3 3 3 3 1 2 3 4 5 SUBJECT CODE SUBJECT TITLE L T P C Page No.
TOTAL CREDITS: 18
SEMESTER II
Sl.No. THEORY 1 2 3 4 5 PRACTICAL 6 SECX6506 Nano Electronics Circuits Lab 0 0 4 2 12 SECX5021 SECX5046 SECX5047 Advanced Digital Signal And Image Processing Thin Film Techniques Single Electronics Device And modeling Elective-I Elective-II 3 3 4 3 3 0 0 0 0 0 0 0 0 0 0 3 3 4 3 3 6 7 8 SUBJECT CODE SUBJECT TITLE L T P C Page No.
TOTAL CREDITS: 18
SEMESTER III
Sl.No. THEORY 1 2 3 4 5 PRACTICAL 6 SECX6507 Nano Simulation Lab 0 0 4 2 12 SECX5040 SECX5048 SECX5025 NANO Sensors and Applications NANO Composites Low Power VLSI Design Elective-III Elective-IV 3 3 3 3 3 0 0 1 0 0 0 0 0 0 0 4 3 4 3 3 9 10 11 SUBJECT CODE SUBJECT TITLE L T P C Page No.
TOTAL CREDITS: 19
M.TECH (NANO TECHNOLOGY) iv REGULATIONS 2010
SEMESTER IV
Sl.No. 1 SUBJECT CODE S87XPROJ SUBJECT TITLE Project Viva-voce L 0 T 0 P 30 C 15
TOTAL CREDITS: 15 TOTAL CREDITS FOR THE COURSE: 70
LIST OF ELECTIVE SUBJECTS

Sl.No. SUBJECT CODE 1 2 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 SECX5049 SECX5050 SECX5052 SECX5053 SECX5054 SECX5055 SECX5056 SECX5057 SECX5058 SECX5059 SECX5060 SECX5061 SECX5062 SECX5063 SPHX5001 SECX5024 SECX5020 SECX5051 SECX5087 SECX5022 SUBJECT TITLE Advanced Nano Material Characterization Techniques NANO And Molecular Electronics Physical Science for NANO Technology NANO Scale Processing And Characterisation For Advanced Devices Advanced Nanomaterials Semiconductors Nanostructure & Nano-particle Nano and Micromaterials Metallopolymer Nanocomposites Optical Properties Of Nanomaterials, Nanophotonics and Plasmonics Carbon Nanotube Electronics and Device Modeling Tools and Techniques for Nanotechnology Applications Nano Photonic Materials NANO Scale Integrated Computing NANO Photo Electrochemical Systems Condensed Matter Physics VLSI Signal Processing VLSI Technology RF MEMS and Its Applications Advanced Crystal Growth Techniques Analog and mixed signal integrated circuits L 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 T 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 P 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 C 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Page No. 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
L Lecture hours; T Tutorial hours; P Practical hours; C Credits
REGULATIONS 2010
SECX5016
TRANSFORMS & PROBABILITY FOR ELECTRONICS ENGINEERING

(Common to VLSI, Embedded, NanoTech)
L 3
T 1
P 0
Credits 4
Total Marks 100
UNIT I ID TRANSFORMS
10 hrs.
Review of Fourier analysis - Analysis of different periodic & non periodic waveforms Sampling Theorem DFS - DTFT - DFT - inverse DFT- properties - FFT radix r algorithm DIT FFT & DIF FFT - Convolution review of Z transform. - Hilbert transform
UNIT II 2D TRANSFORMS
10 hrs.
Need for transform 2D Orthogonal and Unitary transform and its properties 2D DFT Properties FFT Statement, proof and properties of Separable transforms Walsh, Hadamard, Haar, Discrete Sine, DCT, Slant, SVD & KL transforms
UNIT III WAVELET TRANSFORMS
10 hrs.
Wavelet transforms - 1D & 2D Wavelet transform - Time and frequency decompositions - STFT - Continues and discrete - CWT, DWT , Harr wavelet and Shannon wavelet- Fast Wave let transform Wavelet Packets.
UNIT IV PROBABILITY & RANDOM VARIABLES
10 hrs.
Probability concepts- Random variable - moment generating function - discrete types, continues types -2D variable random variables marginal, conditional, joint probability distribution - Binomial, Poisson, uniform, normal and Exponential distributions
UNIT V RANDOM PROCESS
10 hrs.
Notion of stochastic processes, Auto Correlation Cross Correlation WSS Ergodicity - power spectral density function properties - Discrete random process expectations variance, co variance scalar product energy of discrete signals parseval,s theorem Wiener Khintchine relation - Discrete random signal processing by linear systems - response of linear discrete systems to white noise - Two dimensional random variables - transformation of random variables - regression system - simulation of white noise low pass filtering of white noise
TEXT BOOK:
1. Alan V. Oppenheim,"Discrete Time Signal Processing", Prentice Hall, 2009.
REFERENCE BOOKS:
1. Rafael C.Gonzalez, "Digital Image Processing", Pearson Prentice Hall, 2008. 2. Raghuveer Rao,"Wavelet Transform", Pearson Education, 1998. 3. Simon Haykin, "Communication Systems", John Wiley & Sons, 2009.
UNIVERSITY EXAM QUESTION PAPER PATTERN

Max. Marks: 80 Part A: 6 Questions of 5 marks each No choice Part B: 2 Questions from each unit of internal choice, each carrying 10 marks.
M.TECH (NANO TECHNOLOGY) 1
Exam Duration: 3 hrs. 30 marks 50 marks

REGULATIONS 2010
SECX5039
BASICS OF NANOTECHNOLOGY
(Common to VLSI, Nanotechnology)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I INTRODUCTION TO NANOTECHNOLOGY
10 hrs.
Nanoscale technology: Consequences of the nanoscale for technology and society. Beyond Moores Law. Molecular building blocks for nanostructure systems, Nano-scale 1D to 3D structures, Energy Band Diagram: Energy level diagram, Fermi function, n-type operation, p-type operation, Rate equations for a one-level model, Current in a one-level model, Inflow / Outflow, Pauli blocking, quantum of conductance, Potential profile, Iterative procedure for self-consistent solution, Quantum capacitance, Negative Differential Resistance (NDR).
UNIT II ELECTRICAL RESISTANCE-AN ATOMISTIC VIEW
10 hrs.
Negative differential resistance-thermo electric effect-Nano transistors-inelastic spectroscopy-NEGF formalism-input parameters-derivation of NEGF equations-model Hamiltonian.
UNIT III MOLECULAR ELECTRONIC DEVICES
10 hrs.
Basic Concepts- Self assembled Layers, Charge transport Mechanisms; Synthesis of Molecular wires and devices synthesis of two terminal devices, Fabrication of molecular transport devices; Simple SAM metal-insulator-metal Tunneling.
UNIT IV NANOSCALE DEVICE MODELING
10 hrs.
Inadequacy of macroscopic models, Equilibrium, Non-Equilibrium, Density Matrix and current operator; NEGF Formalism Broadening.
UNIT V NANOSCALE DEVICE MODELING
10 hrs.
Quantum Point Contact- Hamiltonian, Self energy; SAM- Signals used to control and probe molecules, Synthesis; Fabrication and overview of Nanotube devices- their properties.
REFERENCE BOOKS:
1. 2. 3. 4. Mark A. Reed and Takhee Lee, "Molecular Nano electronics", American Scientific Publishers, 2003. Suprio Dutta Tutorial on, Electrical Resistance-an atomistic view, Purdue University, 2004 Horst-Gunter Rubahn, "Basics of Nano Technology", Wiley-VCH Verlag Gmbh & Co, 2008. Chris Binns, "Introduction to Nanoscience and NanoTechnology", John Wiley and Sons., 2010.

Exam Duration: 3 hrs. 30 marks 50 marks

REGULATIONS 2010
SECX5044
NANO ELECTRONICS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Electronic states in crystal energy bands, Concepts of 2D nanostructures (quantum wells), 1D nanostructures (quantum wires) 1D nanostructures (quantum dots), artificial atomic clusters.
UNIT II
10 hrs.
Size dependent properties, Size dependent absorption spectra, Blue shift with smaller sizes, Phonons in nanostructures, Contacts at Nano level, AFM. lSTM tip on a surface, Electron charge and spin transport in organic and semiconductor nanodevice.
UNIT III
10 hrs.
Charging of quantum dots, Coulomb blockade, Quantum mechanical treatment of quantum wells, wires and dots, Widening of bandgap in quantum dots, Strong and weak confinement, Properties of coupled quantum dots, Optical scattering from Nan defects, spin field effect transistor.
UNIT IV
10 hrs.
Nanocomposites Electronic and atomic structure of aggregates and nanoparticles-Theory and modeling of nanoparticles fictionalization processes-Nano crystalline structure, Nano crystalline silicon, Zeolites and Nanoclusters in Zeolite Host Lattices-Nano structure based electronic devices- Quantum Cascade Laser- Carbon Nanotube Devices
UNIT V
10 hrs.
Nanosystems: Synthesis and chacterization Methods of Synthesis: Molecular beam epitaxy, MOCVD, chemical routes, nanoparticles on polymers, pulsed laser deposition, ion beam assisted techniques including embedded nanoparticles, RF sputtering.
REFERENCE BOOKS:
1. 2. 3. 4. 5. K.Bamam and D.Vvedensky, "Low Dimensional Semiconductor Structures", Cambrige University Book, 2001. L.Banyai and S.W.Koch, "Semiconductor Quantum Dots", World Scientific Publishing, 1993. J.H. Davies, "An introduction to the physics-af low dimensional semiconductors" , Cambridge Press, 1998. Karl Goser, Peter Glosekotter, Jan Dienstuhl, "Nanoelectronics and Nanosystems", Springer, 2004. Dr.W.R.Fahrner, "Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques", Springer, 2005.

Exam Duration : 3 hrs 30 marks 50 marks

REGULATIONS 2010
SECX5019
MOS DEVICE MODELING

(Common to VLSI, NanoTech)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Overview of MOS: Characteristics of a MOS transistor-Surface properties of Silicon : Energy band diagram for the ideal case-Calculation of the threshold voltage(vt) Non ideal effects- CV plots: importance Ideal case High frequency CV plots low Frequency CV plots Equations to CV plots Deep depletion Deviations from the Ideal CV plots: interface traps, Effect of AC signal on the interface states Techniques to measure Cit, computation of Cs and Ps Limitation in high frequency techniques Comparison of measurements at high and low frequency techniques.
UNIT II
10 hrs.
Sources of Oxide Trapped charge radiation created oxide trapped charge Experimental results How Oxide Trapped charge can be annealed out models to explain the technique Shifts in threshold voltage in P-channel and N-channel MOSFET Disadvantages Shifts at dynamic bias radiation hardening Other alternatives dielectrics gate metallization
UNIT III
10 hrs.
MOSFET- Parameters of importance Qualitative analysis of MOSFET Mathematical model of IV characteristics SPICE level1, level 2, level 3 models Change in velocity with electric field Expression for Id in the sub threshold region of operation.
UNIT IV
10 hrs.
Non uniform doping and effect on threshold voltage short channel effect Narrow width effect Small Geometry effects Shrink and Scaling.Small signal analysis of MOSFET Derivation of the different parameters associated with the small signal model Cutoff frequency Hot carrier effects 1988 model Monte-Carlo analysis
UNIT V
10 hrs.
MOSFET devices HMOS, DMOS, DIMOS, UMOS, VMOS, Sy MOSFET, SOS, Si MOX, BESOI, SEU, FAMOS, MCOS Comparison with the conventional CMOS.MOS Device application : Depletion mode device MOSFET connected as load devices - MOSFET as resistors, Static protection.
TEXT BOOK:
1. Dewitt G. Ong, "Modern MOS technology: processes, Devices and Design", McGraw-Hill, 1984.
REFERENCE BOOKS:
1. Sorab K.Gandhi, "Semiconductor Device Principle", John Wiley & Sons, 1994. 2. Sze S.M., "VLSI technology", McGraw-Hill, 2003.


REGULATIONS 2010
SECX5045
NANO CMOS CIRCUIT AND PHYSICAL DESIGN
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I NANO-CMOS SCALING PROBLEMS AND IMPLICATIONS
10 hrs.
Design Methodology in the Nano-CMOS Era, Scaling, Overview of Sub-100-nm Scaling Challenges and Subwavelength Optical Lithography, Back-End-of-Line Challenges (Metallization), Front-End-of-Line Challenges (Transistors), Process Control and Reliability Lithographic Issues and Mask Data Explosion, New Breed of Circuit and Physical Design, Modeling Challenges, Need for Design Methodology Changes
UNIT II THEORY AND PRACTICALITIES OFSUBWAVELENGTH OPTICAL LITHOGRAPH
10 hrs.
Introduction and Simple Imaging Theory, Challenges for the 100-nm Node, -Factor for the 100-nm Node, Significant Process Variations, Impact of Low- Imaging on Process-Sensitivities, Low- Imaging and Impact on Depthof Focus, Low- Imaging and Exposure Tolerance, Low- Imaging and Impact on Mask Error, Enhancement Factor, Low- Imaging and Sensitivity to Aberrations ,Low- Imaging and CD Variation as a Functionof Pitch, Low- Imaging and Corner Rounding Radius, Resolution Enhancement Techniques: Physics, Specialized Illumination Patterns, Optical Proximity Corrections, Subresolution Assist Features, Alternating Phase-Shift Masks, Physical Design Style Impact on RET and OPC Complexity, Specialized Illumination Conditions- Two-Dimensional Layouts, Alternating Phase-Shift Masks, Mask Costs,
UNIT III PROCESS SCALING IMPACT ON DESIGN MIXED-SIGNAL CIRCUIT DESIGN
10 hrs.
Introduction - Design Considerations, Device Modeling, Passive Components, Design Methodology - Benchmark Circuits, Design Using Thin Oxide Devices - Design Using Thick Oxide Devices, Low-Voltage Techniques, Current Mirrors, Input Stages, Output Stages, Bandgap References, Design Procedures, Electrostatic Discharge Protection, Multiple-Supply Concerns, Noise Isolation, Guard Ring Structures, Isolated NMOS Devices, Epitaxial Material versus Bulk Silicon, Decoupling, Power Busing, Integration Problems, Corner Regions, Neighboring Circuitry,
UNIT IV ELECTROSTATIC DISCHARGE PROTECTION DESIGN
10 hrs.
Introduction - ESD Standards and Models, ESD Protection Design, ESD Protection Scheme, Turn-on Uniformity of ESD Protection Devices, ESD Implantation and Silicide Blocking, ESD Protection Guidelines, Low-C ESD Protection Design for High-Speed I/O, ESD Protection for High-Speed I/O or Analog Pins, Low-C ESD Protection Design, Input Capacitance Calculations, ESD Robustness, Turn-on Verification, ESD Protection Design for Mixed-Voltage I/O, Mixed-Voltage I/O Interfaces, ESD Concerns for Mixed-Voltage I/O Interfaces, ESD Protection Device for a Mixed-Voltage I/O Interface, ESD Protection Circuit Design for a Mixed-VoltageI/O Interface, ESD Robustness, Turn-on Verification, SCR Devices for ESD Protection, Turn-on Mechanism of SCR Devices, SCR-Based Devices for CMOS On-Chip ESD Protection,
UNIT V SIGNAL INTEGRITY PROBLEMS IN ON-CHIP INTERCONNECTS
10 hrs.
Introduction - Interconnect Figures of Merit, Interconnect Parasitics Extraction, Circuit Representation of Interconnects, RC Extraction, Inductance Extraction, Signal Integrity Analysis, Interconnect Driver Models, RC Interconnect Analysis, RLC Interconnect Analysis, Noise-Aware Timing Analysis, Design Solutions for Signal Integrity, Physical Design Techniques, Circuit Techniques.
TEXT BOOKS:
1. Ban P. Wong, Anurag Mittal, Yu CaoGreg Starr, "NANO-CMOS CIRCUITAND PHYSICAL DESIGN", John Wiley & Sons, Inc., Hoboken, New Jersey. 2000. 2. Charles chiang, Jamil Kawa, "Design for manufacturability and yield for Nano - Scale CMOS", Springer, 2007. 3. Oleg Semenov, Hossein Sarbishael, ManojSachdev, "ESD Protection Device and Circuit Design for Advanced CMOS Technologies", Springer, 2008.


REGULATIONS 2010
SECX5021
ADVANCED DIGITAL SIGNAL AND IMAGE PROCESSING

(Common to VLSI, NanoTech, Embedded and E&C)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I SPECTRUM ESTIMATION & PREDICTION
10 hrs.
Review of FIR, IIR, filters-Signal analysis using Fourier Transform - Periodogram- sample auto correlation- sum decomposition theorem- spectral factorization theorem- non parametric method- correlation method- co variance estimator- unbiased, consistant estimator- periodogram estimator- Bartlett spectrum estimation- Welch estimation- model based approach- AR- MA- ARMA signal modeling- parameter estimation using yule walker method- least mean square error criterion- Wiener filter-linear prediction- forward backward prediction- levinson recursion algorithm for solving toeplitz system of equations
UNIT II ADAPTIVE FILTERS
10 hrs.
FIR adaptive filter- Newton steepest descent method widrow hoff LMS adaptive algorithm- adaptive channel equalization- adaptive echo cancellor- adaptive noise cancellasion- RLS adaptive filter- simplified IIR LMS adaptive filter.
UNIT III MULTI RATE SIGNAL PROCESSING
10 hrs.
Mathematical description of change of sampling rate- interpolation- decimation- continuous time model- direct digtal domain approach- decimation by an integer factor- interpolation by an integer factor- single and multi stage realization-poly phase realision- filteer bank implementation- application to sub band coding.
UNIT IV IMAGE ENHANCEMENT AND RESTORATION
10 hrs.
Elements of digital image processing systems- elements of visual perception- structure of human eyeMonochrome vision model- image enhancement and restoration-Spatial domain method- histogram processing- spatial filtering- edge crispening- interpolation- homomorphic filtering degradation model- diaginalization of Circulant and Block Circu;ant Matrices-Algebraic Approach to restoration- constrained and unconstrained restoration- inverse filtering and wiener filter-Image morphology.
UNIT V IMAGE DATA COMPRESSION
10 hrs.
Fundamentals of coding- image compression model- fundamental coding theorem shannons coding, Huffman coding- pixel coding- predictive techniques- lossy and loseless predictive coding- variable length coding, bit plain codingtransform coding, zonal and threshold coding, image compression standard- CCITT and JPEG standards.
TEXT BOOK:
1. Monson Hayes, "Monson Hayes, Statistical digital signal processing and modeling", John Wiley & Sons, 2002.
REFERENCE BOOKS:
1. 2. 3. 4. John G Proakis, "Digital signal processing", Pearson Prentice Hall, 2007. Simon Haykin, "Adaptive filter theory", Prentice Hall, 2002. Anil K Jain, "Fundamental of Digital image processing", Prentice Hall, 1989. Rafael Gonzalez, "Digital Image Processing", Pearson Prentice Hall, 2008.


REGULATIONS 2010
SECX5046
THIN FILM TECHNIQUES
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I DEFINITION OF THIN FILMS
10 hrs.
Environment (gas phase and plasma) for thin film deposition; requirement for substrate; substrate cleaning; deposition parameters and their effects on film growth,nanocrystalline thin film.
STRUCTURE OF THIN FILMS:

Formation of thin films (sticking coefficient, formation of thermodynamically stable cluster-nucleation); microstructure, surface roughness; density; stress in thin films; adhesion; stoichiometry; metastable structure.
UNIT II PHYSICAL PARAMETERS FOR EVALUATION OF THIN FILM

Mechanical, electrical, thermal, chemical, optical.
10 hrs.
VACCUME TECHNOLOGY:
Concept of different vaccum pumps;rotary, diffusion,turbo molecular pump, cryogenic pump, ti-sublimation pump, gas kinetics; concept of different gauges : pirani, penning, pressure control.
UNIT III PHYSICAL VAPOUR DEPOSITION (PVD) TECHNIQUES
10 hrs.
Thermal evaporation,resistance evaporation ;electron beam evaporation ;laser abalation ;ion vapor evaporation and cathodic arc deposition. Electrical discharges used in thin film deposition:Sputtering;glow discharge Sputtering; magnetron Sputtering ; ion beam Sputtering ; ion plating ; oxidizing and nitriding.
UNIT IV ATOMIC LAYER DEPOSITION (ALD)
10 hrs.
Importance of ALD technique, atomic layer growth:physics and technology. Chemical vapor deposition techniques: Advantages and disadvantages of Chemical vapor deposition techniques(CVD) over PVD techniques, reaction types, boundaries and flow, different kinds of CVD techniques: metallorganic (MO) CVD,photoassisted CVD, thermally activated CVD, plasma enhanced( RF, wave) CVD,low pressure(LP) CVD, atmospheric pressure(AP) CVD and Pulsed laser deposition technique.
UNIT V PROCESSING TECHNOLOGIES

Pattern transfer: reactive ion etching, ion milling, ion beam dry itching, Molecular beam epitaxy. Applications: Thin Film Photo voltaic cells,Thin film Batteries.
10 hrs.
REFERENCE BOOKS:
Chopra K.L., "Thin film phenomenon", Tata McGraw-Hill, 1968. Chang C.Y. and Sze S.M., VLSI tehnology Tata McGraw-Hill,1996. Ghandhi S.K. , VLSI fabrication principles; silicon and gallium arsenide, 2 nd Edition, John Wiley and Sons, 1994. G.L. and Carlson R.W. Methods of experimental physics vol 14. 3.Vaccume physics and technologyJ.F.OHanlon." A Users guide to vaccume technology "John Wiley and Sons, 1989. 5. Roth A., "Vaccume Technology" north-holland, 1990. 6. Delchar T.A., "vaccum physics and techniques", Chapman and hall, 1993. 7. Hirth J.P. and Pound G.M. "Evaporation: nucleation and growth kinetics" Pergamon press, Oxford, 1963. 1. 2. 3. 4.


REGULATIONS 2010
SECX5047
SINGLE ELECTRONICS DEVICE AND MODELING
L 4
T 0
P 0
Credits 4
Total Marks 100
UNIT I INTRODUCTION
10 hrs.
principle of single electronic transistor the coulomb blockade, theoretical quantum dot transistor;- energy of quantum dot system, conductance oscillation and potential fluctuation, transport under finite temperature and finite bias, single electron effect, modeling of transport: tunneling- tunneling in oxide, quantum kinetic equation, carrier statistics and charge fluctuations, performance of single- electron transistor, technology.
UNIT II BASIC SINGLE- ELECTRON DEVICES
10 hrs.
SINGLE electron box, single electron transistor,single electron trap, single electron turnsile and pump, SET oscillators, superconductor systems; device structure and fabrication-experimental results and analysis-single-electron quantum-dot transistor, single hole, quantum dot transistor, transport characteristics under finite bias, transport through exited states, artificial atom, single charge trapping, SET circuit design- wiring and drivers, logic memory circuits, SET adder as an example of a distributed circuit, comparison between FET and SET circuit designs.
UNIT III ANALOG AND DIGITAL APPLICATIONS
10 hrs.
Voltage state logics, charge state logics, problems, background-charge-insensitive memory, crested tunnel barriers, nonvolatile random access memory (NOVORAM), other single electron and few electron devices and memories, electrostatic data storage (ESTOR).
UNIT IV SINGLE ELECTRON TRANSISTORS AND THEIR MEMORIES
10 hrs.
Introduction to memory devices, floating gate scheme, single electron MOS memory (SEMM)-Structure, Fabrication Procedure, experimental observations, analysis, effect of trap states effect of thicker tunnel diode experimental behavior of memories- percolation effects, limitations in use of field effect, confinement and random effects. In semiconductors, variances due to dimensions, limits due to tunneling, tunneling fabricated SESO transistor. SESO memory, memory technology comparison.
UNIT V SIMULATION METHODS AND NUMERICAL ALGORITHMS
10 hrs.
Monte-carlo in oxide, tunneling in silicon; SESO transistor- history, single electron devices to SESO, method, solution of the master equation, coupling with SPICE, free energy, tunnel transmission coefficient, energy levels, evaluation schemes for co tunneling, rate calculation including electromagnetic environment, numerical integration of tunnel rates, time dependent node voltages and node charges, stability diagram and stable states, capacitance calculations, SIMON single- electron software package.
REFERENCE BOOKS:
1. 2. 3. 4. shunri oda, david ferry, "Silicon Nanoelectronics", CRC press, Taylor and Francis group,2006. Goser K. "Nanaoelectronics and nanosystems", springer, 2005. R.Tsu "supperlatice to nanoelectronics", Elsevier, 2005. Korotkov A.N., averin D.V., Likharev K.K., Vasenko S.A.,"single-electron transistors as ultrasensitive electrometers",single -electron tunneling and mesoscopic devices",springer,1992. 5. Averin D.V., Nazarov Y.V., "microscopic quantum tunneling of charge and cotunneling",in H.Grabert, M.H. Devoret(eds),"single charge tunneling: columb blockade phenomena in nanostructures",Plenum press and NATO scientific affairs division,new york and london,1992 6. Christoph wasshubler." Computational single- electronics", springer,2001.


REGULATIONS 2010
SECX5040
NANO SENSORS AND APPLICATIONS

L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Fundamentals of Nano Sensors: Micro and nano-sensors, Fundamentals of sensors, biosensor, micro fluids, MEMS and NEMS, Packaging and characterization of sensors, Method of packaging at zero level, dye level and first level.Sensors.
UNIT II
10 hrs.
Quantum Structures and Devices:Quantum layers, wells, dots and wires, Mesoscopic Devices, Nanoscale Transistors, Single Electron Transistors, MOSFET and NanoFET, Resonant Tunneling Devices, Carbon Nanotube based logic gates, optical devices. Connection with quantum dots, quantum wires, and quantum wells.
UNIT III
10 hrs.
Sensors for aerospace and defense: Accelerometer, Pressure Sensor, Night Vision System, Nano tweezers, nano-cutting tools, Integration of sensor with actuators and electronic circuitry, Civil applications: metrology, bridges and other industrial applications.
UNIT IV
10 hrs.
Biosensors: Clinical Diagnostics, generation of biosensors, immobilization, characteristics, applications, conducting Polymer based sensor, DNA Biosensors, optical sensors. Biochips. Metal Insulator Semiconductor devices, molecular electronics, information storage, molecular switching, Schottky devices. Sensor for bio-medical applications: Cardiology, Neurology and as diagnostic tool.
UNIT V
10 hrs.
Magnetic biosensors: Introduction, Magnetoresistance-based sensors, Hall effect sensors, Other sensors detecting stray magnetic fields, Sensors detecting magnetic relaxations, Sensors detecting ferrofluid susceptibility.
REFERENCE BOOKS:
1. Meixner H., "Sensors: Micro & Nanosensors, Sensor Market trends" Wiley-VCH, 1995. 2. Ping Sheng, Zikang Tang "Nanoscience & Technology: Novel structure and phenomena"Taylor & Francis, 2003. 3. Michael Rieth. "Nano Engineering in Science & Technology : An introduction to the world of nano design" World Scientific publishing Co.pte.ltd, 2003 4. Vijay K.Varadan "Nanosensors,Microsensors,and Biosensors and Systems",SPIE-International Society for Optical Engine, 2007. 5. Larry Nagahara, Nongjian Tao, Thomas Thundat, "Introduction to Nanosensors Series: Nanostructure Science and Technology", Springer-Verlag New York Inc, 2008.


REGULATIONS 2010
SECX5048
NANO COMPOSITES
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I NANOCOMPOSITES MATERIALS TECHNOLOGY OVERVIEW
10 hrs.
Basic definitions and types of composites and matrix materials hybrid nanocomposites-type and shape of various nanoparticles such as nanoclays, carbon Nanofibers, carbon nanotubes, silica and alumina - different polymers such as thermoplastic, thermoset and elastomer - characterization of nanocomposite dispersibility - polymer nanocomposite distinctive features (electrical, thermal and mechanical).
UNIT II NANOCOMPOSITES FABRICATION AND MANUFACTURING
10 hrs.
Polymer Matrix-Transformation of polymers into polymer nanocomposites- Types of Montmorillonite Clay fillers CNT fillers intercalated and exfoliated - Weight ratios-Polymer Nanocomposites fabrication Extrusion Process Single and Twin screw extruders Master batching.
UNIT III TEST METHODS FOR COMPOSITE MATERIALS AND STRUCTURES
10 hrs.
Extruders ASTM specimen standards - Specimen selection and preparation procedures-Tensile, compressive, flexure, shear and fracture toughness tests, Volume resistivity, Surface resistivity, Permittivity, Dielectric strength, arc resistant, Thermal Gravimetric analysis (TGA),Heat deflection temperature (HDT).
UNIT IV STUDIES ON NANOCOMPOSITES
10 hrs.
Morphological Studies Scanning Electron Microscopy (SEM) / Transmission Electron Microscopy (TEM) / Atomic Force Microscopy (AFM) Dielectric Studies Structural and Thermal studies Melt Flow Index (MFI) Fourier transform Infra-red (FTIR) XRay Diffraction (XRD) biodegradation Recycling strategies for thermoplastic composites Case study.
UNIT V RECYCLING AND APPLICATIONS OF NANOCOMPOSITES
10 hrs.
Recyling Process- Flowchart-Properties and property changes over virgin material- Contaminants-Role of Contaminants in property change. Electrical, Electronic, Automotive and Aerospace applications of Nanocomposites with examples. Use of Recycled polymers and Metro Solid Waste (MSW) Case Study-Future regulatory issues on Polymer nanocomposites based on Solid Waste Management.
REFERENCE BOOKS:
1. Ajayan P.M., Schadler L.S., Braun P.V. "Nanocomposites Science and Technology", Wiley-VCH, 2003. 2. Riichiro Saito, Gene Dresslhaus, and Dresselhaus M.S., "Physical Properties of Carbon Nanotubes", Imperial College Press, 1999. 3. Endo M., Iijima S., Dresselhaus M.S. "Carbon Nanotubes", Pergamon, 1996.

Exam Duration : 3 hrs. 30 marks 50 marks

REGULATIONS 2010
SECX5025
LOW POWER VLSI DESIGN

L 3
T 1
P 0
Credits 4
Total Marks 100
UNIT I
10 hrs.
Introduction- Need for Low power VLSI design Charging and Discharging Capacitance- Short circuit current in CMOS CMOS leakage current- Static current- Principles of Low power design- Low power figure of Merits.
UNIT II
10 hrs.
Simulation power analysis- SPICE circuit analysis- Discrete Transistor Modeling and analysis - Gate level Logic simulation - Architecture level analysis - Data Correlation analysis in DSP systems - Monte Carlo Simulation - Random Logic signal- Probability Power analysis techniques- Signal entropy.
UNIT III
10 hrs.
Transistor and gate sizing-Network Restructuring and Reorganization- special latches and Flip-flops-Low power digital cell library - Gate Reorganization- Signal Gating Logic Encoding -State Machine encoding- Precomputation Logic.
UNIT IV
10 hrs.
Special Techniques- Power reduction in clock networks- CMOS floating node -Low power Bus -Delay BalancingLow power techniques for SRAM- Architecture and system- Power and performance management -Switching activity reduction -Parallel Architecture Flow graph transformation.
UNIT V
10 hrs.
Advanced techniques- Adiabatic Computation- Pass transistor Logic synthesis -Asynchronous circuits - Software Design for Low power-Sources of software power dissipation- Software power optimization.
TEXT BOOK:
1. Gary Yeap "Practical Low Power Digital VLSI design" Kluwer Academic Publishers, 2009.
REFERENCE BOOKS:
1. 2. 3. 4. 5. Sharat Prasad and Koushik Roy "CMOS Low power VLSI design", John Wiley & Sons., 2000. Kiat Seng Yeo & Kaushik Roy, "Low voltage, Low power VLSI subsystems", McGraw-Hill, 2005. Meloberti Franco, "Analog design for CMOS VLSI systems", Kluwer Academic Publishers, 2001. Abdellatif Bellaouar, "Low-Power Digital VLSI Design: Circuits and Systems", Kluwer Academic Publishers, 2000. Saraju P. Mohanty-Nagarajan Ranganathan, Elias Kougianos, Priyardarsan Patra, "Low-Power High-Level Synthesis for Nanoscale CMOS Circuits", Springer, 2009.


REGULATIONS 2010
SECX6503
EDA TOOLS LABORATORY (Common to VLSI, NanoTech)
L 0
T 0
P 4
Credits 2
Total Marks 100
Analog experiments I. To acquire the knowledge of designing and simulation of basic analog circuits using Pspice
1. Analog amplifiers. 4. FET characteristics 7. Passive filters 9. Electrical circuit theorems Theorem 10. 11. 12. 13. 14. 15. 16. 17. 2. Oscillators 3. BJT biasing circuits 5. Multivibrators 6. RLC circuits 8. Attenuators Superposition TheoremMaximum power transfer theorem Nortons Theorem Reciprocity
Waveform Generation Circuits Schmitt Trigger Square wave Generator Switch mode power supply (SMPS) Schmitt Trigger Diode Experiments Modulation Circuits Op- amps Digital Experiments Combinational Circuits Sequential Circuits Inverters with various types of load Scaling of MOS devices For all experiments shown above, the VLSI layout would be prepared by using the tool MAGIC.
II. Preparation of Layouts using MAGIC.
SECX6505
NANO ELECTRONICS CIRCUITS LAB
L 0
T 0
P 4
Credits 2
Total Marks 100
1. 3. 5. 7. 9.
Single Single Single Single Single
electron electron electron electron electron
Universal Fredkin gate half adder 2 to 4 Decoder Flip-Flop BOTA
2. 4. 6. 8. 10.
Single electron control not gate Single electron Full adder Single electron Encoder Single electron OTA Single electron analog circuits
SECX6507
NANO SIMULATION LAB
L 0
T 0
P 4
Credits 2
Total Marks 100
Experiments using SIMON Software Package

1. 2. 3. 4. Study of SIMON software and understanding of its toolbox components. VI Characteristics of single electron transistor at tunneling junction Design and simulation of Hybrid inverter Design and simulation of (i) Combinational logic circuits (ii) (iii) (iv) Sequential logic circuits Analog circuits A/D mixed circuits
12 REGULATIONS 2010
SECX5049
ADVANCED NANO MATERIAL CHARACTERIZATION TECHNIQUES
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I ELECTRON MICROSCOPY
10 hrs.
Necessity of Morphological studies-overview of Elelctron Microscopy, Different types-principles, and application of EELS, EDX & WDX, FE-SEM, HR-TEM, HAADF, RHEED, limitations and Accuracies.
UNIT II X-RAY PHOTOELECTRON SPECTROSCOPY
10 hrs.
Principles of X-ray Spectroscopies,configurations,design and principles of ARXPS & UPS, XANES, NEXAFS, EXAFS-case study of XRD.
UNIT III SCANNING PROBE MICROSCOPY AND APPLICATION
10 hrs.
Nano indentation-Force modulation-scanning tunneling microscope (STM) principle-conductive Fm-Basic principles and application of EFM, MFM, AFM, SCM, ECAFM, ECSTM..
UNIT IV NEAR FIELD MICROSCOPY
10 hrs.
Principle of operation of Micro-and near field Raman Spectroscopy,Surface-enhanced Raman Spectroscopy, Computational techniques for far-field representations from near field measurements.
UNIT V SQUID MAGNETOMETER
10 hrs.
Electron pair waves-phase and coherence_Effect of magnetic field-Fluxoid-josephson tunneling-SQUID-SQUID magnetometer-Applications of SQUID magnetometry in Nanotechnology.
REFERENCE BOOKS:
1. 2. 3. 4. Nalwa H.S., "Handbook of Nanostructured Materials and Nanotechnology", Academic Press, 2000. Goodhew P.J. and Humphreys F.J., "Electron Microscopy And Analysis", Taylor and Francis, 2000. Woodruff D.P. and Delchar T.A., "Modern techniques of surface science", Cambridge University Press, Cambridge, 1994. Sutton A.P., "Electronic Structure of Materials", Oxford University Press, 1993.


REGULATIONS 2010
SECX5050
NANO AND MOLECULAR ELECTRONICS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I MOLECULAR ELECTRONIC COMPUTING ARCHITECTURES
10 hrs.
Molecular Electronic Computing Architectures: Present Microelectronic Technology, Fundamental Physical Limitations of Present, Technology, Molecular Electronics, Computer Architectures Based on Molecular, Electronics, Characterization of Switches and Complex Molecular Devices.
UNIT II UNIMOLECULAR ELECTRONICS
10 hrs.
Unimolecular Electronics: Donors and Acceptors, Homos and LumosContacts, Two-Probe, Three-Probe, and Four-Probe Electrical Measurements, Resistors, Rectifiers or Diodes,Switches, Capacitors, Future Flash Memories, Field-Effect, Transistors, Negative Differential Resistance Devices, Coulomb Blockade Device, and Single-Electron Transistor,Future Unimolecular Amplifiers,Future Organic Interconnects, Three-Dimensional Molecular Electronics and Integrated Circuits for Signal and Information Processing Platforms: Data and Signal Processing Platforms, Microelectronics and Nanoelectronics: Performance Estimates, Synthesis, Taxonomy in Design of MICS and Processing Platforms.
UNIT III THE DESIGN OF THREE-DIMENSIONAL MOLECULAR INTEGRATED CIRCUITS
10 hrs.
The Design of Three-Dimensional Molecular Integrated Circuits: Data Structures, Decision Diagrams, and Hyper cells, Decision Diagrams and Logic Design of MICS, Hypercell Design, Three-Dimensional Molecular Signal/Data Processing and Memory Platforms,Hierarchical Finite-State Machines and Their Use in Hardware and SoftwareDesign, Adaptive Defect-Tolerant Molecular Presenting-and-Memory Platforms, HardwareSoftware Design, The Design and Synthesis of Molecular, Electronic Devices: Molecular Towards Molecular Integrated Circuits, Molecular Integrated Circuits,Modeling and Analysis of Molecular Electronic Devices, Particle Velocity, Particle and Potentials, The Schrdinger Equation, Quantum Mechanics and Molecular Electronic Devices: Three-Dimensional Problems, Greens Function Formalism, Multiterminal Quantum-Effect ME Devices.
UNIT IV MOLECULAR ELECTRONICS DEVICES
10 hrs.
Molecular Electronics Devices: Experimental Techniques, Molecular Conductance, Molecular Adsorption on Metal Surfaces and Role of the Electrodes,Role of Surface Defects,Chemisorption, Alligator Clips for Molecular Electronics, The Theory of Electron Transport in Molecules,Quantum Current, Relevant Length Scales, Scattering, Sequential Transport, The Non-Equilibrium Greens, Function Method, Computational Tools and Algorithms,DFT and NEGF for Transport Calculations, General Algorithms,Modeling of the Electrodes.
UNIT V SIMULATION TOOLS IN MOLECULAR ELECTRONICS
10 hrs.
Simulation Tools in Molecular Electronics: Quantum Transport Tools,The gDFTB Approach, Incoherent ElectronPhonon, Scattering, Power Dissipation in Molecular Junctions, Power Dissipation in a Si-Styrene-Ag System, Applications to Octanethiols, Simulation of Organic Thin Film Devices,The DriftDiffusion Method, Organic Semiconductor, Materials, Simulation of Organic Thin Film Transistors,, Traps in Organic Thin Films, Influence of Interface Traps, and Charges on Device Characteristics, Static and Transient IV Simulations,Analysis and Optimization of Organic Logic Circuits, Inverter Circuits, Application to Organic Ring Oscillators.
REFERENCE BOOKS:
1. Sergey Edward Lyshevski, "Nano and Molecular Electronics", CRC Press, 2007. 2. James M. Tour and Dustin K. James, "Molecular Electronic Computing Architectures", World Scientific Publishing Co.pte.Ltd, 2003. 3. Mark A. Reed, Takhee Lee," Unimolecular Electronics: Results and Prospects", American Scientific Publishers, 2003.


REGULATIONS 2010
SECX5052
PHYSICAL SCIENCE FOR NANO TECHNOLOGY
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I INTRODUCTION TO QUANTUM AND STATISTICAL PHYSICS
10 hrs.
Electrons as waves, wave mechanics, Schrdingers equation and particle in a box; eisenbergs Uncertainty Principle. Introduction to the operator formalism bras, kets, expectation values, spin and the exclusion principle. Boltzmann distribution; indistinguishable particles Fermi-Dirac and Bose-Einsteindistributions.
UNIT II INTRODUCTION TO SOLID STATE PHYSICS
10 hrs.
Crystal structure; free electron theory of metals; band theory of solids; metals and insulators; semiconductors: classification, electrons and holes, transport properties; size and dimensionality effects-quantum,wells,wiresanddots.
UNIT III PRINCIPLES OF SEMICONDUCTOR DEVICES
10 hrs.
The p-n junction and the bipolar transistor; metal-semiconductor and metal-insulator-semiconductor junctions; field-effect transistors, MOSFETs, CMOS; heterostructures, high electron mobility devices, HEMTs; Quantum Hall Effect; Introduction to single electron transistors (SETs): quantum dots, single electron effects, Coulomb blockade.
UNIT IV INTRODUCTION TO MAGNETISM AND SUPERCONDUCTIVITY
10 hrs.
Basic magnetic phenomena: paramagnetism, ferromagnetism, ferrimagnetism, anti-ferromagnetism; nano-magnetism; giant and colossal magnetoresistance; ferrofluids. Basic superconductivity phenomena; flux quantisation andJosephsoneffects.
UNIT V BASIC ATOMIC AND MOLECULAR PHYSICS
10 hrs.
Revision of the hydrogen atom, spectroscopic series. The helium atom and the exchange interaction. Many electron atoms, spin-orbit coupling, spectroscopic notation. Interaction of atoms with external fields and radiation Stark and Zeeman Effects, selection rules, lasers. NMR and ESR. Molecular spectra -electronic, vibration and rotation. Bonding and anti- bonding orbitals.
TEXT BOOKS:
1. 2. 3. 4. 5. PJ Goodhew, J Humphreys, R Beanland, "Electron Microscopy and Analysis", Taylor and Francis, London, 2001. E Meyer, HJ Hug, R Bennewitz, "Scanning probe Microscopy", Springer, Heidelberg, 2004. K Tu, JW Mayer, LC Feldman, "Electronic Thin Film Science", Macmillan, New York, 1992. Z Cui , "Mico-Nanofabrication", Higher Education press, Springer, 2005. D. K. Schroder ,"Semiconductor Material and Device Characterization", John Wiley & Sons, New York, 1998.


REGULATIONS 2010
SECX5053
NANO SCALE PROCESSING AND CHARACTERISATION FOR ADVANCED DEVICES
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Si processing methods; cleaning/etching, oxidation, gettering, doping, epitaxy. Sputtering, Chemical vapour deposition (CVD), Plasma-enhanced CVD. Reactive ion etching (RIE). Moores Law; Design rules for CMOS at 90nm, 45nm, 32nm and beyond; Semiconductor device roadmap; Silicon-on-insulator technology. Gate dielectrics, poly-Si, high-k dielectrics.
UNIT II
10 hrs.
Thermal matching. Beyond CMOS the material challenges of ultra-thin body (UTB) MOSFETs for sub-15nm gate technologies. 3-D interconnect technologies. Moving to 450mm silicon substrate technologies. Top-down approach to nanolithography; immersion lithography, EUV photolithography, phase shifting masks, x-ray lithography including plasma-x-ray sources, e-beam lithography, focused ion beams; photoresist technologies for the nanoscale; metrology and defect inspection. Costing and yield. Assembly and packaging.
UNIT III
10 hrs.
Processing III-V semiconductors including nitrides; molecular-beam epitaxy (MBE), chemical beam epitaxy (CBE), metal-organic CVD (MOCVD), quantum wells. Si-Ge, SiC, Diamond: synthesis, defects and properties on the nanoscale. Micromixers and microcontactors for single phase and multiphase systems.Microreactors for catalytic, single phase, and multiphase reactions.Microseparation systems.
UNIT IV
10 hrs.
Bottom-up approach. Chemical self-assembly. Spontaneous formation and ordering of nanostructures. Synthesis and properties of nanoparticles, nano-clusters, nanotubes, nanowires and nanodots. Drexler-Smalley debate - realistic projections.Nano-fluidics to build silicon devices with features comparable in size to DNA, proteins and other biological molecules; Control and manipulation of microfluidic and nanofluidic processes for lab-on-a-chip devices. Role of surfaces in nanotechnology devices; surface reconstruction; dangling bonds and surface states.
UNIT V
10 hrs.
UHV methods; UV and X-ray photoelectron spectroscopy (UPS, XPS); Auger electron pectroscopy (AES); low energy electron diffraction and reflection high energy electron diffraction (LEED, RHEED) secondary ion mass spectrometry (SIMS); Rutherford ackscattering (RBS); Medium energy ion scattering (MEIS); Electron energy loss spectroscopy (EELS) and highresolution EELS(HREELS).
TEXT BOOKS:
1. Edward Ramsden, "Hall Effect Sensors Theory and Applications", Elsevier, 2006. 2. Blood P. and Orton J., "The Electrical Characterization of Semiconductors: Majority Carriers and Electron States", Academicpress London, 1992. 3. M De Crescenzi and Paincastelli MN, "Electron Spectroscopy and Related Spectroscopies", World Scientific, Singapore 1996.


REGULATIONS 2010
SECX5054
ADVANCED NANOMATERIALS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Fundamentals of magnetic materials, Dia, Para, Ferro, Antiferro, Ferri, Superpara magnetic materials AND giant and colossal magneto-resistance.Important properties in relation to nanomagnetic materials.
UNIT II
10 hrs.
Nanostructure Magnetism; Effect Bulk Nanostructuring of Magnetic property; Gaint and colossalMagnetic resistance; Super Para Magnetism in metallic nanoparticle; Super para magnetism / FMin Semi-conduction quantum dots.
UNIT III
10 hrs.
Carbon Nano Structures: Introduction; Fullerenes, C60, C80 and C240 Nanostructures; Properties& Applications (mechanical, optical and electrical).
UNIT IV
10 hrs.
Thermo Electric Materials (TEM): Concept of phonon, Thermal conductivity, Specific heat, Exothermic & endothermic processes. Different types of TEM; Bulk TEM Properties. One dimensional TEM; Composite TEM; Applications.
UNIT V
10 hrs.
Semiconductor nanoparticles applications, Optical luminescence and fluorescence from direct band gap semiconductor nanoparticles, surface-trap passivation in core-shell nanoparticles, carrier injection, polymer-nanoparticle, LED and solar cells, electroluminescence, barriers to nanoparticle lasers, doping nanoparticles, Mn-Zn-Se phosphors, light emission from indirect semiconductors, light emission form Si nanodots.
REFERENCE BOOKS:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. Brian Cantor, "Novel Nanocrystalline Alloys and Magnetic Nanomaterials," Institute of Physics Publications, 2005. S.Chikazumi and S.H. Charap," Physics of Magnetism", Springer-verlag berlin Heideberg, 2005. E.W. Lee, "Magnetostriction and Magnetomechanical Effects", The Institute of Physics, 1955 Luis M.Liz-Marzan and V.Kamat ,"Nanoscale materials", Kluwer Academic Publishers, 2003. Jahachi Satio, "Physical properties of Carbon Nanotube", Wiley-vch verlag, 2010. S.Subramony & S.V. Rotkins, "Applied Physics Of Carbon Nanotubes : Fundamentals Of Theory, Optics And Transport Devices", John Wiley & Sons Ltd, 2010. Michael J. OConnell, "Carbon Nanotubes: Properties and Applications", CRC/Taylor& Francis, 2006. Liming Dai, "Carbon Nano Technology", Elsevier, 2006. CNR Rao and A Govindaraj, " Nanotubes and Nanowires", The Royal Society of Chemistry, 2005. CR Rowe, "Handbook of Thermoelectrics", CRC Press, 1995. A. A. Balandin, K. L. Wang, " Handbook of Semiconductor Nanostructures and Nanodevices Vol 1-5", American Scientific Publishers, 2006. Cao Guozhong, "Nanostructures and Nanomaterials - Synthesis, Properties and Applications", Imperial College Press, 2004.


REGULATIONS 2010
SECX5055
SEMICONDUCTORS NANOSTRUCTURE & NANO-PARTICLE
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Semiconductor nanoparticles Synthesis, Cluster compounds, quantum-dots from MBE and CVD,wet chemical methods, reverse micelles, electro-deposition, pyrolytic synthesis, self-assembly strategies.
UNIT II
10 hrs.
Semiconductor nanoparticles: sizedependant physical properties, Melting point, solid-state phase transformations, excitons, band-gap variations-quantum confinement, effect of strain on band-gap in epitaxial quantum dots, single particle conductance.
UNIT III
10 hrs.
Semiconductor nanoparticles applications, Optical luminescence and fluorescence from direct band gap semiconductor nanoparticles, surface-trap passivation in core-shell nanoparticles, carrier injection, polymer-nanoparticle, LED and solar cells, electroluminescence, barriers to nanoparticle lasers,doping nanoparticles, Mn-Zn-Se phosphors, light emission from indirect semiconductors, light emission form Si nanodots.
UNIT IV
10 hrs.
Semiconductor nanowires, Fabrication strategies, quantum conductance effects in semiconductor nanowires, porous Silicon, nanobelts, nanoribbons, nanosprings.
UNIT V
10 hrs.
Spintronics: Introduction, Overview, History & Background, Generation of Spin Polarization Theories of spin Injection, spin relaxation and spin dephasing, Spintronic devices and applications, spin filters, spin diodes, spin transistors.
REFERENCE BOOKS:
1. Hari Singh Nalwa, "Encyclopedia of Nanotechnology", American Scientific Publishers, 2004. 2. Bharat Bhusan, "Springer Handbook of Nanotechnology", Springer Science media Inc, 2004. 3. A. A. Balandin, K. L. Wang, "Handbook of Semiconductor Nanostructures and Nanodevices Vol 1-5", American Scientific Publishers, 2006. 4. Cao Guozhong, "Nanostructures and Nanomaterials - Synthesis, Properties and Applications", Imperial College Press, 2004. 5. Sadamichi Maekawa, "Concepts in Spintronics", Oxford University Press, 2006.


REGULATIONS 2010
SECX5056
NANO AND MICROMATERIALS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I NANOMETER-SCALE STRUCTURE FORMATION ON SOLID SURFACES
10 hrs.
Introduction- Atomic Layer Etching Processes on Silicon Surfaces- Nanoscale Fabrication Processes of Silicon Surfaces with Halogens- Self-Organized Nanopattern Formation on Copper Surfaces.Ultrafast Laser Spectroscopy Applicableto Nano-and Micromaterials:-Introduction-Femtosecond Optical Kerr Gate Luminescence SpectroscopyFemtosecond Transient Grating Spectroscopy Combined with a Phase Mask-Femtosecond Real-Time Pump-Probe Imaging Spectroscopy
UNIT II DEFECTS IN ANATASE TITANIUM DIOXIDE
10 hrs.
Introduction - Growth of Anatase Single Crystal-Control of Defect States- Properties of Anatase- Carrier Control by Photoirradiation. Organic Radical-Trithia-Triazapentalenyl(TTTA) as Strongly Correlated Electronic Systems:Experiment and Theory:-Introduction- Crystalline Structure- Experimental- Electronic Structure Calculations.Ab Initio GW Calculations Using an All-Electron Approach:-Introduction- Many-Body Perturbation Theory and GW Approximation- Choice of Basis-Set Function-Application to Clusters and Molecules- Self-Consistent GW vs. First Iterative GW (G0W0).
UNIT III PARTICLE EXCITED STATES OF ATOMS AND MOLECULES USING T-MATRIX THEORY 10 hrs.
Background- Methodology: T -Matrix Theory- Double Electron Affinity of Alkali-Metal Clusters-Double Ionization Energy Spectra-Two-Electron Distribution Functions and Short-Range Electron Correlations.Greens Function Formulation of Electronic Transport at Nanoscale:-Introduction- Landauers Transport Formalism: The Greens Function Implementation-Carbon Nanotube Heterostructures-Functional Molecule Between Two Metallic Contacts
UNIT IV SELF-ASSEMBLED QUANTUM DOT STRUCTURE COMPOSED OF IIIV COMPOUND SEMICONDUCTORS
10 hrs.
Introduction- Control of QD Structure by Growth Condition- Growth Process of QD Structure -Analysis of QD Structure. Potential-Tailored Quantum Wells for High- Performance Optical Modulators/Switches:- Introduction Parabolic Potential Quantum Well-Graded - Gap Quantum Well - Asymmetric Coupled Quantum Well - Intermixing Quantum Well.Thermodynamic Properties of Materials Using Lattice - Gas Models with Renormalized Potentials:Introduction - Scheme of the Potential Renormalization - Application of the Potential Renormalization
UNIT V OPTICALLY DRIVEN MICROMACHINES FOR BIOCHIP APPLICATION
10 hrs.
Introduction-Optically Driven Micromachines- Conclusion and Future Prospect References. Study of Complex Plasmas:- Overview of Complex Plasma Research-Charging of a Dust Particle in a Plasma - Measurements of the Charge of Dust Particles Levitating in Electron Beam Plasma-Various Approaches to Plasma - Aided Design of Microparticles System in Ion Flow-Simulation Study of Cluster Design of Charged Dust Particles- Complex Plasma Experiment in Cryogenic Environment.
TEXT BOOKS:
1. Dr.Kaoru ohno,Dr,Masatoshi Tanaka, Jun Takeda, "Nano-and Micromaterials", Springer Berlin Heidelberg, 2008. 2. Gc.Shi, "Multiscaling in molecular and continuum mechanics: interaction of time and size from macro to nano", Springer, 2007. 3. Takafumi, Soon ku fong, "Advances in Material Research,Oxide and Nitride Semiconductors, Processing properties and applications", Springer, 2009.


REGULATIONS 2010
SECX5057
METALLOPOLYMER NANOCOMPOSITES
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I NANOPARTICLES IN MATERIALS CHEMISTRY AND IN THE NATURAL SCIENCES
10 hrs.
Classification of Nanoparticles by Size-Structural Organization of Nanoparticles-Dimensional Phenomena in the Chemistry and Physics of Nanoparticles -Nanoparticles and Materials on their Base Characteristic Features of Nanoparticle Nucleation- Kinetic Features of New Phase Formation- Phase Formation in Chemical ReactionsSelf-Organization of Metal-Containing Nanoparticles (Fractal Structures)- Brief Account of Major Production Methods of Metal-Containing Nanoparticles - Metal Clusters as Nanoparticles-with Fixed Dimensions
UNIT II PRINCIPLES AND MECHANISMS OF NANOPARTICLE STABILIZATION BY POLYMERS
10 hrs.
Stability of Nanoparticles in Solutions - Stabilizing Capability Characteristics of Polymers -Characteristics of Polymer Absorption on Metal Surfaces Specifics of Polymer Surfactants as Stabilizers-Mechanism of Nanoparticle Stabilization by Polymers-Stabilization of Nanoparticles by Electrolytes- Surface Proofing as a Method of Stabilizing Nanoparticles by Polymers On the Problem of Matrix Confinement
UNIT III SYNTHETIC METHODS FOR METALLOPOLYMER
10 hrs.
Nanocomposite Preparation 4 Physical Methods of Incorporating Nanoparticles into Polymers Mechanochemical Dispersion of Precursors Jointly with Polymers Microencapsulation of Nanoparticles into Polymers-Physical Deposition of Metal Particles on Polymers-Formation of 2D Nanostructures on Polymers- Formation of Metal Nanoparticles in Polymer Matrix Voids (Pores)- Physical Modification and Filling of Polymers with Metal Reduction of Polymer-Bound Metal Complexes-Nanocomposite Formation by Metal-Containing Precursor Thermolysis- Nanocomposite Formation in MonomerPolymer Mixtures in Thermolysis- Nanocomposites on the Base of Polymer-Immobilized Metalloclusters
UNIT IV PHYSICO-CHEMICAL METHODS OF METAL-POLYMER NANOCOMPOSITE PRODUCTION10 hrs.

Cryochemical Methods of Atomic Metal Deposition on Polymers- Metal Evaporation Methods on Polymers Localized at Room Temperature-Synthesis of Nanocomposites in a Plasma-Chemical Process- Radiolysis in Polymer Solutions- Photolysis of Metal-Polymer Systems as Means of Obtaining Nanocomposites-Electrochemical Methods of Nanocomposite Formation General Characteristics of SolGel Reactions - A Combination of Polymerization Reactions and In Situ SolGel Synthesis of Nanocomposites- SolGel Syntheses in the Presence of Polymers- Morphology and Fractal Model of Hybrid Nanocomposites- Nanocomposites Incorporating Multimetallic Ceramics. A General Description of the Intercalation Process- Polymerization into the Basal (Interlayer) Space- The Macromolecules Introduction into the Layered Host Lattices- Intercalation Nanocomposites of Polymer/Metal Chalcogenide Type- LangmuirBlodgett Metallopolymer Films as Self-Organized Hybrid Nanocomposites
UNIT V NANOBIOCOMPOSITES
10 hrs.
Basic Notions of Metal-Containing Protein Systems- Metal Nanoparticles in Immunochemistry, Cytochemistry and Medicine- Biosorption, Selective Heterocoagulation and Bacterial Concentration of Metal Nanoparticles- SolGel Process as a Way of Template-Synthesized Nanobioceramics-Biomineralization and Bioinorganic Nanocomposites The Control of Physico-Mechanical Properties of Nanocomposites- The Peculiarity of Nanocomposites, Synthesized by SolGel Methods-Polyolefin-Based Nanocomposites- Polymer Matrix Structurization in Nanocomposites-The Physical and Mechanical Properties of Metallopolymer Nanocomposites- Nanocomposites in Adhesion Compounds (Contacts) and Tribopolymers -New Trends in Material Science Connected with Metallopolymeric Nanocomposites.
TEXT BOOK:
1. Anatolii D. Pomogailo , "MetallopolymerNanocomposites", Springer Berlin Heidelberg New York, 2005.
REFERENCE BOOKS:
1. C F.Candau, R.H.Ottewill, An introduction to polymer Colloids", Kluwer, 1990. 2. A.D. Pomogailo, V.S.Savostyanov, "Synthesis and Polymerization of metalcontaining monomers", CRC Press, 1994.


REGULATIONS 2010
SECX5058
OPTICAL PROPERTIES OF NANOMATERIALS, NANOPHOTONICS AND APPLICATIONS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I METAL NANOPARTICLES
10 hrs.
Metal Nanoparticles, Alloy Nanoparticles, Stabilization in Sol, Glass, and other media, Change of bandgap, Blueshift, Colour change in sol, glass, and composites, Plasmon Resonance.
UNIT II SEMICONDUCTOR NANOPARTICLES APPLICATIONS
10 hrs.
Optical luminescence and fluorescence from direct, bandgap semiconductor nanoparticles, surface-trap passivation in core-shell nanoparticles, carrier injection, polymer-nanoparticle LEDs and solar cells, electroluminescence; barriers to nanoparticle lasers; doping nanoparticles, Mn-ZnSe phosphors; light emission from indirect semiconductors, light emission from Si nanodots.
UNIT III PHYSICS OF LINEAR PHOTONIC CRYSTALS
10 hrs.
Maxwells Equations, Blochs Theorem, Photonic Band Gap and Localized Defect States, Transmission Spectra, Nonlinear Optics in Linear Photonic Crystals, Guided Modes in Photonic Crystals Slab
UNIT IV PHYSICS OF NONLINEAR PHOTONIC CRYSTALS
10 hrs.
1-D Quasi Phase Matching, Nonlinear Photonic Crystal Analysis, Applications of Nonlinear Photonic Crystals Devices, Materials: LiNbO3, Chalcogenide Glasses, etc, Wavelength Converters, etc
UNIT V ELEMENTS OF PLASMONICS
10 hrs.
Introduction: Plasmonics, merging photonics and electronics at nanoscale dimensions, single photon transistor using surface plasmon, nanowire surface plasmons-interaction with matter, single emitter as saturable mirror, photon correlation, and integrated systems. All optical modulation by plasmonic excitation of quantum dots, Channel plasmon-polariton guiding by subwavelength metal grooves, Near-field photonics: surface plasmon polaritons and localized surface plasmons, Slow guided surface plasmons at telecom frequencies.
REFERENCE BOOKS:
1. 2. 3. 4. Bharat Bhushan, " Springer Handbook of Nanotechnology", Springer-Verlag: Heidelber, Germany, 2004. Hari Singh Nalwa , "Encyclopedia of Nanotechnology", American Scientific Publishers, 2004. Mool Chand Gupta, John Ballato, "The Handbook of Photonics ",Taylor & Francis, 2006. S. Kawata & H. Masuhara, " Nanoplasmonics, From fundamentals to Applications vol 1 & 2. Elsevier, 2006.


REGULATIONS 2010
SECX5059
CARBON NANOTUBE ELECTRONICS AND DEVICE
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I BASICS OF CARBON NANO TUBES
10 hrs.
Carbon materials Allotropes of carbon - Structure of Carbon Nanotubes - types of CNTs- Electronic properties of CNTs- Band structure of Graphene Band structure of SWNT from grapbene - electron transport properties of SWNTs Scatterings in SWNTs Carrier mobility in SWNTs.
UNIT II SYNTHESIS AND INTEGRATION OF SWNT DEVICES
10 hrs.
Introduction- CVD Synthesis - Method - Direct Incorporation with Device Fabrication Process - SWNT Synthesis on Metal Electrodes- Lowering the Synthesis Temperature- Controlling the SWNT Growth- Location, Orientation, ChiralityNarrowing Diameter Distributions-Chirality Distribution Analysis for Different CVD Processes - Selective Removal of the Metallic Nanotubes in FET Devices - Integration
UNIT III CARBON NANOTUBE FIELD-EFFECT TRANSISTORS
10 hrs.
Schottky Barrier Heights of Metal S/D Contacts- High-k Gate Dielectric Integration- Quantum CapacitanceChemical Doping- Hysteresis and Device Passivation- Near Ideal, Metal-Contacted MOSFETs- SWNT MOSFETs- SWNT band to band tunneling FETs.
UNIT IV AC RESPONSE AND DEVICE SIMULATION OF SWNT FETs
10 hrs.
Assessing the AC Response of Top Gated SWNT FETs- Power Measurement Using a Spectrum Analyzer Homodyne Detection Using SWNT FETs - RF Characterization Using a Two Tone Measurement - AC Gain from a SWNT FET Common Source Amplifier - Device Simulation of SWNT FETs SWNT FET Simulation Using NEGF Approach - Device Characteristics at the Ballistic Limit- Role of Phonon Scattering High Frequency Performance Limits - Optoelectronic Phenomena
UNIT V CARBON NANOTUBE DEVICE MODELING AND CIRCUIT SIMULATION
10 hrs.
Schottky Barrier SWNT-FET Modeling- Compact Model for Circuit Simulation- Model of the Intrinsic SWNT Channel Region- The Full SWNT-FET Model- Applications of the SWNT-FET Compact Model - Performance Modeling for Carbon Nanotube Interconnects- Circuit Models for SWNTs - Circuit Models for SWNT Bundles- Circuit Models for MWNTs - Carbon Nanotube Interconnects Applications.
REFERENCE BOOKS:
1. 2. 3. 4. Ali Javey, Jing Kong, "Carbon Nanotube Electronics", Springer Science media, 2009. Michael J. OConnell, "Carbon Nanotubes: Properties and Applications", CRC/Taylor& Francis, 2006. Franois Lonard, "The Physics of Carbon Nanotube Devices", William Andrew Inc, 2009. R.Saito, Gdresseleiaus & M S Drbselmus, "Physical Properties of Carbon Nanotubes", Imperial college press, 1998.


REGULATIONS 2010
SECX5060
MODELING TOOLS AND TECHNIQUES FOR NANOTECHNOLOGY APPLICATIONS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I MATHEMATICAL TOOlS
10 hrs.
On Deterministic Fractional Models - Stability Analysis of Linear Discrete-Time Fractional-Order Systems- Stability of Fractional-Delay Systems- Comparing Numerical Methods for Solving Nonlinear Fractional Order Differential Equations- Fractional-Order Backward-Difference Definition Formula Analysis- Fractional Differential Equations on Algebroids and Fractional Algebroids-Generalized Hankel Transform and Fractional Integrals on the Spaces of Generalized Functions-Fractional Derivatives with Fuzzy Exponent- Synchronization Analysis of Two Networks
UNIT II FRACTIONAL MODELLING
10 hrs.
Modeling Ultracapacitors as Fractional-Order Systems- IPMC Actuators Non Integer Order Models - Limited Frequency Band Integrator and Application to Energetic Material Ignition Prediction - Fractional Order Model of Beam Heating Process and Its Experimental Verification- Analytical Design Method for Fractional Order Controller Using Fractional Reference Model- Chaotic Fractional Order Delayed Cellular Neural Network- Fractional Wavelet Transform for the Quantitative Spectral Analysis of Two-Component System.
UNIT III FRACTIONAL CONTROL SYSTEMS
10 hrs.
Stability Analysis of Fractional Order Universal Adaptive Stabilization- Position and Velocity Control of a Servo by Using GPC of Arbitrary Real Order- Fractional Order Adaptive Control for Cogging Effect Compensation- Generalized Predictive Control of Arbitrary Real Order- Resonance and Stability Conditions for Fractional Transfer Functions of the Second Kind- Fractional Control Strategy for Four-Wheel-Steering Vehicle- Fractional Order Sliding Mode Controller Design for Fractional Order Dynamic Systems- Nyquist Envelope of Fractional Order Transfer Functions with Parametric Uncertainty
UNIT IV NEW TRENDS IN NANOTECHNOLOGY
10 hrs.
Novel Molecular Diodes Developed by Chemical Conjugation of Carbon Nanotubes with Peptide Nucleic Acid Hybrid SingleWalled Carbon Nanotube FETs for High Fidelity DNA Detection - Integrated Nanoelectronic and Photonic Devices - New Noninvasive Methods for Reading of Random Sequences and Their Applications in Nanotechnology Quantum Confinement in Nanometric Structures.
UNIT V TECHNIQUES AND APPLICATIONS
10 hrs.
Air-Fuel Ratio Control of an Internal Combustion Engine Using CRONE Control Extended to LPV Systems- Non Integer Order Operators Implementation via Switched Capacitors Technology- Fractional Dynamics of an Ultracapacitor and Its Application to a Buck-Boost Converter- Approximation of a Fractance by a Network of Four Identical RC Cells Arranged in Gamma and a Purely Capacitive Cell.
TEXT BOOKS:
1. D. Baleanu, Z.B.Guvenc J.A. Tenreiro Machado,"New Trends in Nanotechnology and Fractional Calculus Applications", Springer Science media, 2010. 2. Challa S. S. R. Kumar, Josef Hormes, Carola Leuschner, "Nanofabrication towards biomedical applications: Techniques and Tools", Wiley- VCH, 2004. 3. Mark Ratner, Daniel Ratner, "Nanotechnology: A gentle introduction to the next big idea", First edition, Prentice Hall Press, 2002.


REGULATIONS 2010
SECX5061
NANO PHOTONIC MATERIALS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I PROPERTIES OF PHOTONIC CRYSTALS
10 hrs.
Linear and Non-linear Properties of Photonic Crystals - Solitary Wave Formation in One-dimensional Photonic Crystals-Variational Approach to the NLCME-Radiation Losses-Microscopic Analysis of the Optical and Electronic Properties of Semiconductor Photonic Crystal Structures-Spatially-Inhomogeneous Maxwell Equations in Semiconductor Photonic-Crystal-Semiconductor Bloch Equations in Real Space Structures.
UNIT II FUNCTIONAL 3D PHOTONIC FILMS FROM POLYMER BEADS
10 hrs.
Opals as Coloring Agents-Increase of Refractive Index-Inert Replica for Chemistry and Catalysis at High Temperatures-Patterning of the Opal -Patterning of an Infiltrated Material-Chemistry in Defect Layers-Bloch Modes and Group Velocity Delay in Coupled Resonator-Coherent Cavity Field Coupling in One-Dimensional CROWs-Mode Structure in Finite CROWs-Disorder and Detuning in CROWs.
UNIT III COUPLED NANOPILLAR WAVEGUIDES
10 hrs.
Dispersion Tuning-Coupled Mode Model-Transmission Efficiency-Aperiodic Nanopillar Waveguides- ApplicationsDirectional Coupler- Laser Resonators-Ultra-low Refractive Index Mesoporous Substratesfor Waveguide StructuresFabrication of Mesoporous Silica Films- Polymer Waveguides-PZT Films.
UNIT IV LINEAR AND NONLINEAR PHOTONIC CRYSTALS
10 hrs.
Light Propagation in Nonlinear Photonic Crystals- An Optical Parametric Oscillator in a Photonic Crystal Microcavity-Discrete Solitons in Coupled Defects in Photonic Crystals- Fabrication of 2D Photonic Crystals- Fabrication of Trenches and More Complex Geometries- Defects in 2D Macroporous Silicon Photonic Crystals.
UNIT V PLASMONIC AND METAMATERIALS
10 hrs.
Optical Properties of Photonic/Plasmonic Structures in Nanocomposite Glass-Calculation of Effective Permittivity-Metamaterials with Different Unit Cells-Numerical Simulation of Meander Structures.
TEXT BOOK:
1. Wehrspohn R.B., Kitzerow H.S., and Busch K., "Nanophotonic Materials", Wiley-VCH,2008
REFERENCE BOOKS:
1. Caloz, C .and Itoh,T, "Electromagnetic Metamaterials. Transmission Line Theory and MicrowaveApplications", JohnWiley & Sons, Inc., 2006. 2. Collin, R.E . Field Theory of Guided Waves", IEEE Press, Oxford University Press, 1991. 3. Joannopoulos, J.D., Meade, R.D. and Winn, J.N. , Photonic Crystals:Molding the Flow of Light", Princeton University Press, 1995.


REGULATIONS 2010
SECX5062
NANO SCALE INTEGRATED COMPUTING
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I AN INTRODUCTION TO NANOCOMPUTING
10 hrs.
The Micro computing Era - The Transistor as a Switch, Difficulties with Transistors at the Nanometer Scale Nanoscale Devices- Molecular Devices- Nano Tubes Quantum Dots Wave Computing Quantum Computing.
UNIT II QUANTUM COMPUTING
10 hrs.
Reversible Computations- Quantum Computing Models-Complexity Bounds For Quantum Computing-Quantum Compression-Quantum Error Correcting Codes-Quantum Cryptography-computing with quantum dot Cellular automata-The Quantum dot Cellular automata Cell- Ground State Computing- Clocking- QCA Addition- QCA Multiplication- QCA memory- 4-bit Processor.
UNIT III SPIN-WAVE ARCHITECTURES
10 hrs.
Spin Wave Crossbar- Spin Wave Reconfigurable Mesh- Spin Wave Fully Interconnected Cluster- Multi scale Hierarchical Architecture- Spin Wave-Based Logic Devices- Logic Functionality- parallel computing with Spin waves: Parallel Algorithm Design Techniques- Parallel Routing and Broadcasting- On Spin-Wave Crossbar- On Spin-Wave Reconfigurable Mesh- On Spin-Wave Fully Interconnected Cluster.
UNIT IV MOLECULAR COMPUTING
10 hrs.
Switching and Memory in Molecular Bundles- Molecular Bundle Switches- Circuit and Architectures in Molecular Computing- Molecular Grafting For Silicon Computing- Molecular Grafting on Intrinsic Silicon Nanowires- Self-Assembly Of Carbon Nanotubes (Cnts).
UNIT V COMPUTATIONAL TASKS IN MEDICAL NANOROBOTICS
10 hrs.
Medical Nanorobot Designs- Microbivores- Clottocytes- Chromallocytes- Common Functions Requiring Onboard Computation- Nanorobot Control Protocols: Operational Protocols- Biocompatibility Protocols- Theater ProtocolsNanoscale image Processing: Labeling Problem- Convex Hull Problem- the Nearest Neighbor Problem.
TEXT BOOK:
1. Mary Mehrnoosh Eshaghian-Wilner , "Bio inspired and Nano Scale Integrated Computing", John Wiley and Sons,2009.
REFERENCE BOOKS:
1. 2. 3. 4. Nielsen M.A. and Isaac L. Chuang, "Quantum Computation and Quantum Information", Cambridge University Press, 2000. Jain A.K., "Fundamentals of Digital Image Processing", Prentice-Hall, 1988. Schroder D.K, " Semiconductor Material and Device Characterization", New York: Wiley, 2006. Zhou C., New Haven, "Atomic and Molecular Wires", Yale University Press, 1999.


REGULATIONS 2010
SECX5063
NANO PHOTO ELECTROCHEMICAL SYSTEMS
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I FUNDAMENTALS TO PHOTO ELECTROCHEMISTRY
10 hrs.
Organic solar cells Dye sensitized solar cells Regenerative solar cells Photo physics of semiconductors and semiconductor particles Carrier relaxation (55)- Charge transfer at the semiconductor electrolyte interface, Conversion of solar energy
UNIT II FUNDAMENTALS AND APPLICATIONS OF QUANTUM CONFINED STRUCTURES
10 hrs.
Quantisation effects in semiconductors for nanostructures Optical spectroscopy of quantum wells, super lattices and quantum dots - Hot electron and hole cooling dynamics in quantum confined semiconductors High conversion efficiency via multiple exciton generation in quantum dots Quantum dot solar cell configurations.
UNIT III FUNDAMENTALS AND APPLICATIONS IN ELECTRON TRANSFER REACTIONS
10 hrs.
Thermodynamics of ET and PET reactions Classical Marcus theory Semiclassical theories of nonadiabatic electron transfer Electron transfer in donor-bridge-acceptor supermolecules Electrochemical electron transfer Rate control by reorganisation dynamics - Optimisation of photoinduced electron transfer in photoconversion.
UNIT IV FUNDAMENTALS IN METAL OXIDE HETEROGENEOUS PHOTOCATALYSIS
10 hrs.
The complex science underlying metal oxide photocatalysis Metal oxide photochemistry, photophysics and modeling Challenges in heterogeneous photocatalysis Theoritical description of quantum yields Evidence for a gas/solid surface reaction being photocatalytic.
UNIT V MESOSCOPIC SOLAR CELLS AND PHOTOELECTROCHEMICAL STORAGE CELLS
10 hrs.
Mode of function of dye-sensitised solar cells DSSC research and development Solid state dye-sensitised cells Pilot production of modules, outdoor field tests and commercial DSSC development - Comparative solar energy storage process Modes of photoelectrochemical storage Optimisation of photoelectrochemical storage High efficiency multiple bandgap cells with storage.
TEXT BOOK:
1. Mary D.Archer, Arthur J Nozik , "Nanostructured and Photoelectrochemical Systems for Solar Photon Conversion ",Imperial College Press: London, 2008
REFERENCE BOOKS:
1. 2. 3. 4. Vayssieres, Lionel , "On Solar Hydrogen and Nanotechnology", John Wiley and Science, 2009. Allen J. Bard, Larry R. Faulkner, "Electrochemical Methods: Fundamentals and Applications", John Wiley and Sons, 1980. E. Pelizzetti, "Homogeneous and Heterogeneous Photocatalysis", Kluwer Academic Publishers, 1986. David H. Volman, Douglas C. Neckers and Gunther Von Bunau, "Advances in Photochemistry," John Wiley & Sons, 1997.


REGULATIONS 2010
SPHX5001
CONDENSED MATTER PHYSICS

(Common to NanoTech, Appl. Elec.)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Crystal binding: Force between atoms-cohesive energy-calculation of cohesive energy bonding in solids-iconic, covalent, metallic, molecular-hydrogen bonded crystals-binding energy of ionic crystals-Madelung constant-Born Heber Cycle.
UNIT II
10 hrs.
Lattice dynamics: Reciprocal space: Brolliouin Zones-vibration modes of mono of mono and diatomic lattices-quantization of lattice vibration-phonon momentum-scattering of neurons by phonons-neutron diffraction.
UNIT III
Condensed matter under High pressure :
10 hrs.
Elastic constants Measurements Mechanical properties Tension and compression Fatigue creep-Hydrostatic extrution, material synthesis super hard materials Diamond oxides and other compounds Water jet.
UNIT IV
10 hrs.
Optical Properties: Index of refraction-damping constant characteristic penetration depth-absorbance-reflectivity and transmissivity-point defect-color centers-luminescence-exciton-polaron-interband-intra band transitions-dispersion relation.
UNIT V
10 hrs.
Atomic molecular structure: Central field approximation-Thomas Fermi model and its application-Hartree and Hartree Fock equations hydrogen molecules-Heitler London model-LCAO-Hybridization.
TEXT BOOK:
1. Michael P. Marder , "Condensed Matter Physics", Wiley-VCH, 2000.
REFERENCE BOOKS:
1. 2. 3. 4. Kittel C., "Introduction to solid stae physics", 7th, Edn, Wiley Eastern, 1996. Chandra A.K., "Quantum Chemistry", Prentice Hall, 1990. Hummel R.E., "Electronic properties of materials", Narosa Publishing House, 1993. Raimes S., "The wave mechanics of electrons in metals", North Holland Publishing Company, 1967.

Max. Marks: 80 Part A: 6 Questions of 5 marks each - No choice Part B: 2 Questions from each unit of internal choice, each carrying 10 marks.

REGULATIONS 2010
SECX5024
VLSI SIGNAL PROCESSING (Common to VLSI, NanoTech)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I
10 hrs.
Introduction to DSP systems Typical DSP algorithms, DSP application demands representation of DSP algorithms Iteration bound data flow graph representation, loop bound and iteration bound, Algorithms for computing Iteration bound, Iteration bound of multi rate data flow graphs- pipelining and parallel processing pipelining of FIR digital filter, parallel processing, pipelining and parallel processing for low power.
UNIT II
10 hrs.
Retiming definition and properties, solving systems of inequalities, Re timing techniques Unfolding Properties and algorithm for unfolding, critical path and applications of unfolding folding transformation, register minimization technique, register minimization in folded architectures folding of multi rate systems.
UNIT III
10 hrs.
Systolic architecture design methodology, FIR systolic array, selection of scheduling vector, matrix to matrix multiplication, 2D systolic array design, systolic design for space representation containing delays fast convolution algorithms Algorithmic strength reduction in filters and transforms.
UNIT IV
10 hrs.
Pipelined and parallel recursive and adaptive filters scaling and round off noise round off noise in pipe lined FIR filters, lattice filters, slow down, re timing and pipelining Digital lattice filter structure schur algorithm, basic digital lattice filter, derivation of one multiplier lattice filter, normalized lattice filter, pipe lining of lattice filters, low pass CMOS lattice IIR filter, bit level arithmetic architectures redundant arithmetic
UNIT V
10 hrs.
Numeric strength reduction synchronous, wave and asynchronous pipe lines low power design programmable digital signal processors.
TEXT BOOK:
1. Keshab K.Parthi, "VLSI Digital Signal Processing systems" , Design and implementation", Wiley- Inter Science , 1999
REFERENCE BOOKS:
1. Mohammed Isamail and Terri fiez, "Analog VLSI Signal and information processing", Mc Graw-Hill, 1994. 2. Kung S.Y., White House H.J., T.Kailath, "VLSI and Modern Signal Processing", Prentice Hall, 1985. 3. Jose E.France, Yannis Tsvidis, " Design of Analog - Digital VLSI Circutis and Signal Processing." Prentice Hall, 1994.


REGULATIONS 2010
SECX5020
VLSI TECHNOLOGY
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I CRYSTAL GROWTH, WAFER PREPARATION, EPITARY AND OXIDATION.
10 hrs.
Electronic grade silicon Basic steps in IC fabrication-crystal plane and orientation Defects in the lattice Czochralski crystal growing silicon shaping Processing consideration Vapour phase epitaxy Liquid phase epitaxy-selective epitaxy- Molecular beam epitaxy - Epitaxial Evaluation Growth mechanism and kinetics Thin oxides Oxidation Techniques and systems oxide properties redistribution of dopants at interface oxidation of polysilicon Oxidation induced effects.
UNIT II LITHOGRAPHY AND RELATIVE PLASMA ETCHING.
10 hrs.
Mask Making Optical lithography Electron lithography X-ray lithography Ion lithography. Plasma properties Feature size control and Anisotropie Etch mechanism Lift off Techniques Plasma reactor Fl2 &Cl2 based etching Relative plasma etching Techniques and Equipments.
UNIT III DEPOSITION, DIFFUSION , ION IMPLANTATION AND METALIZATION.
10 hrs.
Deposition process polisilicon - plasma assisted deposition models of diffusion in solids Ficks one dimensional diffusion equation Atomic diffusion mechanism measurement techniques Range theory Carrier recovery due to annealing - Implantation equipment Annealing Shalloe junction high energy implantation Physical vapour deposition patterning.
UNIT IV METALLIZATION
10 hrs.
Metallization applications metallization choices Patterning Metallization problems New role of metallizationmetallization systems sputtering problems associated with Al Cu interconnect Comparison of RC delay of Polysilicon, Al.
UNIT V ANALYTICAL, ASSEMBLY TECHNIQUES & PACKAGING OF VLSI DEVICES
10 hrs.
Analytical beams Beams specimen interaction Chemical methods package types baking design considerations VLSI assembly technology Package Fabrication Technology.
TEXT BOOK:
1. S.M.Sze "VLSI Technology ", Mc.Graw Hill 2nd Edition, International Edition 1998.
REFERENCE BOOKS:
1. 2. 3. 4. Sorab. K. Gandhi, "VLSI Fabrication and Principles", McGraw Hill, 2005. Amar Mukherjee, "Introduction to NMOS & CMOS VLSI system Design", Prentice Hall, USA, 1986. Mccanny and J.C.White, "VLSI Technology and design", Tata Mc Graw Hill, 2002. Dasgupta, " VLSI Technology ", Pearson Education, 2001.


REGULATIONS 2010
SECX5051
RF MEMS AND ITS APPLICATIONS

(Common to VLSI, NanoTech, Appl.Elec.)
L 3
T 0
P 0
Credits 3
Total Marks 100
UNIT I INTRODUCTION
10 hrs.
MEMS-Microfabrications for MEMS -Surface micromachining of silicon -Wafer bonding for MEMS-LIGA process-Micromachining of polymeric MEMS devices -Three-dimensional microfabrications.Transducers: Electromechanical transducers-Piezoelectric transducers Electrostrictive transducers -Magnetostrictive transducers -Electrostatic actuators- Electromagnetic transducers -Electrodynamic transducersActuators: Electrothermal actuators-Comparison of electromechanical actuation schemes.
UNIT II MICRO SENSING FOR MEMS
10 hrs.
Piezoresistive sensing - Capacitive sensing - Piezoelectric sensing - Resonant sensing - Surface acoustic wave sensors. Materials: Materials for MEMS - Metal and metal alloys for MEMS - Polymers for MEMS - Other materials for MEMS.Metals: Evaporation Sputtering. Semiconductors :Electrical and chemical properties-Growth and deposition.Thin films for MEMS and their deposition techniques -Oxide film formation by thermal --oxidation -Deposition of silicon dioxide and silicon nitride -Polysilicon film deposition -Ferroelectric thin films. Materials for polymer MEMS: Classification of polymers -UV radiation curing -SU-8 for polymer MEMS.
UNIT III MICRO MACHINING AND LITHOGRAPHY
10 hrs.
Micromachning : Bulk micromachining for silicon-based MEMS -Isotropic and orientation-dependent wet etching - Dry etching Buried oxide process -Silicon fusion bonding -Anodic bonding -Silicon surface micromachining Sacrificial layer technology - Material systems in sacrificial layer technology - Surface micromachining using plasma etching -Combined integrated-circuit technology and anisotropic wet etching .Lithography : Microstereolithography for polymer MEMS -Scanning method -Two-photon microstereolithography Surface micromachining of polymer MEMS -Projection method -Polymeric MEMS architecture with silicon, metal and ceramics -Microstereolithography integrated with thick film lithography.
UNIT IV MEMS INDUCTORS AND CAPACITORS
10 hrs.
Introduction- MEMS/micromachined passive elements: pros and cons. MEMS inductors : Self-inductance and mutual inductance - Micromachined inductors - Effect of inductor layout - Reduction of stray capacitance of planar inductors-Approaches for improving the quality factor Folded inductors - Modeling and design issues of planar inductors - Variable inductors Polymer based inductors.MEMS capacitors: MEMS gap-tuning capacitors - MEMS area-tuning capacitors - Dielectric tunable capacitors. Micromachined antennae : Introduction - Overview of microstrip antennae- Basic characteristics of microstripeantennae - Design parameters of microstrip antennae - Micromachining techniques to improve antenna performance - Micromachining as a fabrication process for small antennae - Micromachined reconfigurable antennae.
UNIT V APPLICATIONS
10 hrs.
Switching: Introduction- Switch parameters- Basics of switching - Mechanical switches-Electronic switches- Switches for RF and microwave applications - Mechanical RF switches - PIN diode RF switches - Metal oxide semiconductor field effect transistors and monolithic microwave integrated circuits. RF MEMS switches : Integration and biasing issues for RF switches -Actuation mechanisms for MEMS devices-Electrostatic switching - Approaches for low-actuation-voltage switches - Mercury contact switches Magnetic switching - Electromagnetic switching - Thermal switching.Dynamics of the switch operation : Switching time and dynamic response - Threshold voltage. MEMS switch design, modeling and evaluationy:Electromechanical finite element analysis - RF design - MEMS switch design considerations.
TEXT BOOK:
1. Vijay K.Varadan, K.J.Vinoy and K.A.Jose, "RF MEMS and Their Applications (ISBN 0-470-84308-X)", 1st edition, John Wiley & Sons Ltd., West Sussex, England, 2003.
REFERENCE BOOKS:
1. P. Rai-choudhury, "MEMS and MOEMS Technology and Applications", 1st Edition, PHI, 2009. 2. S. Senturia, "Microsystem Design", Kluwer Academic Publishers, 2001. 3. J.W. Gardner, V.K. Varadan, O.O. Awadelkarim, "Microsensors, MEMS & Smart Devices", John Wiley, 2001.


REGULATIONS 2010
SECX5087
ADVANCED CRYSTAL GROWTH TECHNIQUES
L 3
T 0
P 0
Credits 3
Total Marks 100
Unit I
10 hrs.
Crystal Growth theory- Introduction - Nucleation - Gibbs-Thomson equation for melt and solution - Kinetic theory of nucleation - Limitations of classical nucleation - Rate of nucleation - Different shapes of nucleus- spherical, cap shaped and cylindrical.
UNIT II
10 hrs.
Growth from Melt - Bridgeman method - Kyropolous method - Czochralski method - Verneuil method - Zone melting method. Growth from Flux - Slow cooling method - Temperature difference method - High pressure method - Solvent evaporation method - Top seeded solution growth.
UNIT III
10 hrs.
Growth from Vapour phase - Physical vapour deposition - Chemical vapour transport - Open and closed system Thermodynamics of chemical vapour deposition process - Physical and Thermo-chemical factors affecting growth process.
UNIT IV
10 hrs.
Growth from Solutions - Solvent and solutions - solubility - Preparation of a solution - Saturation and Supersaturation - Measurement of supersaturation - Expression for supersaturation - Low temperature solution growth Slow cooling method - Manson Jar method - Evaporation method - Temperature gradient method - Electro crystallization. Growth from Gels - Experimental methods - Chemical reaction method - Reduction method - Complex decomposition method - Solubility reduction method - Growth by hydrothermal method.
UNIT V
10 hrs.
Epitaxy - Vapour Phase Epitaxy (VPX) - Liquid Phase Epitaxy (LPX) - Molecular Beam Epitaxy (MBE) - Atomic Layer Epitaxy (ALE) - Elctroepitaxy - Metalorganic Vapour Phase Epitaxy (MOVPE) - Chemical Beam Epitaxy (CBE).
REFERENCE BOOKS:
1. 2. 3. 4. 5. 6. Sangwal.K, "Elementary Crystal Growth", 1st Edition, Saaan Publiser, UK, 1994. Faktor.M.M. Garret. I, "Growth of Crystals from Vapor", 1st Edition, Chapmann and Hall, 1988. Santhana Ragavan. P, Ramasamy.P, "Crystal Growth and Process", 1st Edition, KRU Publications, 2000. Ramasamy. P, ISTE Summer School Lecture Notes, "Crystal Growth Centre", Anna University, Chennai, 1991. Brice. J.C, "Crystal Growth Process", 1st Edition, John Wiley Publications, New York, 1986. Chernov.A.A, "Modern crystallography: III. - Crystal Growth", 1 st Edition, Springer Series in Solid State, New York, 1984.


REGULATIONS 2010
SECX5022
ANALOG AND MIXED SIGNAL INTEGRATED CIRCUITS (Common to VLSI, NanoTech)
L 3
T 1
P 0
Credits 4
Total Marks 100
UNIT I SINGLE STAGE AMPLIFIERS AND CURRENT MIRRORS
10 hrs.
Basics of CMOS - Analog model of MOSFET - low and high frequency models - Simple CMOS current mirror source degenerated current mirrors - high output impedance current mirrors -All NMOS Operational Amplifier DesignBipolar current mirrors - Bipolar gain stages - gain enhancement techniques - Frequency response.
UNIT II OP AMP DESIGN AND ADVANCED CURRENT MIRRORS
10 hrs.
Two stage CMOS op amp - op amp as a comparator - Charge injection errors, Latched Comparators - Advanced current mirrors - folded cascade and current mirror op amp - Linear settling time revisited, fully differential op amp Analysis of Differential Amplifier with active load, supply and temperature independent biasing techniques.
UNIT III VOLTAGE REFERENCE, SAMPLE AND HOLD CIRCUITS
10 hrs.
Sample and hold circuits - MOS sample and hold basics - examples of CMOS S/H circuits - Bipolar and BiCMOS S/H circuits - Band gap reference basics - translinear gain cell - Translinear multiplier- Basics of OTA Amplifiers Design.
UNIT IV DATA CONVERTERS AND NEURAL INFORMATION PROCESSING
10 hrs.
High speed A/D and D/A converters - High resolution converters - Sigma delta A/D converter - Interpolative Modulators - Testing of converters Biologically Inspired Neural Networks - Low Power Neural Networks - Analog cell Layout - Mixed Analog - Digital Layout.
UNIT V SWITCHED CAPACITOR CIRCUITS AND PLL
10 hrs.
Basic building blocks of switched capacitor circuits - Basic operation and Analysis -Switched capacitor amplifier Switched capacitor integrators - Z Domain Model Representation of Switched Capacitor Circuits - Switched Capacitor filter Design - Charge injection. Basic loop architecture of PLL - Linearized PLL model - Phase detectors - Sequential phase detector - PLL with charge pump phase comparator - VCO.
TEXT BOOKS:
1. David A Johns and Ken Martin "Analog Integrated circuit design" John wiley & Sons, 2004. 2. Gray & Mayer, "Analysis and Design of Analog Integrated Circuits" John wiley and Sons, 4th edition, 2005.
REFERENCE BOOKS:
1. 2. 3. 4. 5. Behzad Razavi "Design of Analog CMOS Integrated circuits" Tata Mc Graw Hill, India Ltd., 2000. Franco Maloberti, "Analog Design for CMOS VLSI Systems" Springer International Edition, BS publications, 2003. Roger T.Howe and Charles G.Sodini, "Micro Electronics an Integrated Approach" Pearson Education Pvt Ltd, 2004. Roubik Gregorian, "Analog MOS Integrated Circuits for Signal Processing" John wiley and sons, 2004. Rudy Van de Plassche, "CMOS Integrated A/D and D/A converters" Springer International Edition., BS publications, 2003.


REGULATIONS 2010

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SATHYABAMA UNIVERSITY

(Established under section 3 of UGC Act, 1956)

Jeppiaar Nagar, Rajiv Gandhi Salai, Chennai - 119.

SYLLABUS MASTER OF TECHNOLOGY PROGRAMME IN NANOTECHNOLOGY (4 SEMESTERS) REGULATIONS 2010

FACULTY OF ELECTRONICS ENGINEERING

SATHYABAMA UNIVERSITY REGULATIONS 2010

M.TECH (NANO TECHNOLOGY)

FACULTY OF ELECTRONICS ENGINEERING

RANGE OF MARKS FOR GRADES

CUMULATIVE GRADE POINT AVERAGE CALCULATION

where Ci - Credits for the subject

i - Sum of all subjects successfully cleared during all the semesters

FACULTY OF ELECTRONICS ENGINEERING

Final Degree is awarded based on the following :

M.TECH (NANO TECHNOLOGY)

FACULTY OF ELECTRONICS ENGINEERING

M.Tech - NANOTECHNOLOGY REGULATIONS 2010 CURRICULUM SEMESTER I

FACULTY OF ELECTRONICS ENGINEERING

TOTAL CREDITS: 15 TOTAL CREDITS FOR THE COURSE: 70

LIST OF ELECTIVE SUBJECTS

L Lecture hours; T Tutorial hours; P Practical hours; C Credits

M.TECH (NANO TECHNOLOGY)

FACULTY OF ELECTRONICS ENGINEERING

TRANSFORMS & PROBABILITY FOR ELECTRONICS ENGINEERING

Total Marks 100

UNIT III WAVELET TRANSFORMS

UNIT IV PROBABILITY & RANDOM VARIABLES

UNIT V RANDOM PROCESS

UNIVERSITY EXAM QUESTION PAPER PATTERN

Exam Duration: 3 hrs. 30 marks 50 marks

FACULTY OF ELECTRONICS ENGINEERING

Total Marks 100

UNIT I INTRODUCTION TO NANOTECHNOLOGY

UNIT II ELECTRICAL RESISTANCE-AN ATOMISTIC VIEW

UNIT III MOLECULAR ELECTRONIC DEVICES

UNIT IV NANOSCALE DEVICE MODELING

UNIT V NANOSCALE DEVICE MODELING

UNIVERSITY EXAM QUESTION PAPER PATTERN

Exam Duration: 3 hrs. 30 marks 50 marks

FACULTY OF ELECTRONICS ENGINEERING

Total Marks 100

UNIVERSITY EXAM QUESTION PAPER PATTERN

Exam Duration : 3 hrs 30 marks 50 marks

FACULTY OF ELECTRONICS ENGINEERING

MOS DEVICE MODELING

Total Marks 100

UNIVERSITY EXAM QUESTION PAPER PATTERN

Exam Duration : 3 hrs 30 marks 50 marks

FACULTY OF ELECTRONICS ENGINEERING

NANO CMOS CIRCUIT AND PHYSICAL DESIGN

Total Marks 100

UNIT I NANO-CMOS SCALING PROBLEMS AND IMPLICATIONS

UNIT II THEORY AND PRACTICALITIES OFSUBWAVELENGTH OPTICAL LITHOGRAPH

UNIT III PROCESS SCALING IMPACT ON DESIGN MIXED-SIGNAL CIRCUIT DESIGN

UNIT IV ELECTROSTATIC DISCHARGE PROTECTION DESIGN

UNIT V SIGNAL INTEGRITY PROBLEMS IN ON-CHIP INTERCONNECTS

UNIVERSITY EXAM QUESTION PAPER PATTERN

Exam Duration : 3 hrs 30 marks 50 marks

FACULTY OF ELECTRONICS ENGINEERING

ADVANCED DIGITAL SIGNAL AND IMAGE PROCESSING

Total Marks 100

UNIT I SPECTRUM ESTIMATION & PREDICTION

UNIT II ADAPTIVE FILTERS