BC546 / 547 / 548

Vishay Semiconductors

Small Signal Transistors (NPN)

Features
NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. As complementary types the PNP transistors BC556...BC558 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18.

C 1 2 B 1
18855_1

3 E 3

Mechanical Data
Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box

Parts Table
Part BC546A BC546B BC547A BC547B BC547C BC548A BC548B BC548C Ordering code BC546A-BULK or BC546A-TAP BC546B-BULK or BC546B-TAP BC547A-BULK or BC547A-TAP BC547B-BULK or BC547B-TAP BC547C-BULK or BC547C-TAP BC548A-BULK or BC548A-TAP BC548B-BULK or BC548B-TAP BC548C-BULK or BC548C-TAP Remarks Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack

Document Number 85113 Rev. 1.2, 02-Nov-04

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Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector - base voltage Test condition Part BC546 BC547 BC548 Collector - emitter voltage BC546 BC547 BC548 BC546 BC547 BC548 Emitter - base voltage BC546 BC547 BC548 Collector current Collector peak current Peak base current Peak emitter current Power dissipation
1)

VISHAY

Symbol VCBO VCBO VCBO VCES VCES VCES VCEO VCEO VCEO VEBO VEBO VEBO IC ICM IBM - IEM

Value 80 50 30 80 50 30 65 45 30 6 6 5 100 200 200 200 500

1)

Unit V V V V V V V V V V V V mA mA mA mA mW

Tamb = 25 C

Ptot

Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.

Maximum Thermal Resistance

Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range
1)

Test condition

Symbol RJA Tj TS

Value 2501) 150 - 65 to + 150

Unit C/W C C

Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.

Electrical DC Characteristics
Parameter Small signal current gain (current gain group A) Small signal current gain (current gain group B) Small signal current gain (current gain group C) Input impedance (current gain group A) Input impedance (current gain group B) Input impedance (current gain group C) Output admittance (current gain group A) Output admittance (current gain group B) Output admittance (current gain group C) Test condition VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz Part Symbol hfe hfe hfe hie hie hie hoe hoe hoe 1.6 3.2 6 Min Typ 220 330 600 2.7 4.5 8.7 18 30 60 4.5 8.5 15 30 60 110 k k k S S S Max Unit

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Document Number 85113 Rev. 1.2, 02-Nov-04

VISHAY
Parameter Reverse voltage transfer ratio (current gain group A) Reverse voltage transfer ratio (current gain group B) Reverse voltage transfer ratio (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) Collector saturation voltage Base saturation voltage Base - emitter voltage Collector-emitter cut-off current Test condition VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 2 mA, f = 1 kHz VCE = 5 V, IC = 10 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA VCE = 80 V VCE = 50 V VCE = 30 V VCE = 80 V, Tj = 125 C VCE = 50 V, Tj = 125 C VCE = 30 V, Tj = 125 C BC546 BC547 BC548 BC546 BC547 BC548 Part Symbol hre hre hre hFE hFE hFE hFE hFE hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat VBE VBE ICES ICES ICES ICES ICES ICES

BC546 / 547 / 548

Vishay Semiconductors
Min Typ 1.5 x 10-4 2 x 10-4 3 x 10-4 90 150 270 110 200 420 180 290 500 120 200 400 80 200 700 900 580 660 0.2 0.2 0.2 700 720 15 15 15 4 4 4 200 600 mV mV mV mV mV mV nA nA nA A A A 220 450 800 Max Unit

Electrical AC Characteristics
Parameter Gain - bandwidth product Collector - base capacitance Emitter - base capacitance Noise figure Test condition VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC546 Part Symbol fT CCBO CEBO F Min Typ 300 3.5 9 2 10 6 Max Unit MHz pF pF dB

BC547 BC548

F F

2 1.2

10 4

dB dB

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BC546 / 547 / 548

Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
Ptot - Admissible Power Dissipation ( mW )

VISHAY

500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( C )

I CBO - Collector-Base Cutoff Current ( nA )

10000 maximum 1000

100 typical 10 1 0.1 0 Test voltage VCBO : equal to the given maximum value VCES 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( C )

18865

18826

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

Figure 4. Collector-Base Cutoff Current vs. Ambient Temperature

1000 Tamb = 100 C 25 C - 50 C

I C - Collector Current ( mA ) h FE - DC Current Gain

100

VCE = 5 V

100

10

Tamb = 100 C

10

VCE = 5 V

- 50 C 1

25 C 0.1 0 0.2 0.4 0.6 0.8 1

1 0.01
18824

0.1 1 10 I C - Collector Current ( mA )

100
18827

VBE - Base-Emitter Voltage ( V )

Figure 2. DC Current Gain vs. Collector Current

Figure 5. Collector Current vs. Base-Emitter Voltage

r thA - Pulse Thermal Resistance ( C / W)

10 3
C CBO / C EBO - Collector / Emitter

10

Base Capacitance ( pF )

10 2

10

0.2 0.1 0.05 0.02 0.01 0.005 tp

8 6 C EBO C CBO

= 0

= tp /T
T 10 -4 10 -2 1 t p - Pulse Length ( s )

PI 10 2

2 0 0.1

Tamb = 25 C 1 10 VCBO , V EBO - Reverse Bias Voltage ( V )

10 -1 10 -6

18866

18828

Figure 3. Pulse Thermal Resistance vs. Pulse Duration

Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance vs. Bias Voltage

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Document Number 85113 Rev. 1.2, 02-Nov-04

VISHAY

BC546 / 547 / 548

Vishay Semiconductors

VCEsat - Collector Saturation Voltage ( V )

0.5 0.4

I C / I B = 20

0.3 0.2

Tamb = 100 C 25 C - 50 C 1 10 I C - Collector Current ( mA ) 100

0.1 0 0.1

18829

Figure 7. Collector Saturation Voltage vs. Collector Current

100
h e ( I C ) / h e ( IC = 2 mA )

10

h ie

VCE = 5 V Tamb = 25 C

h re 1 h fe h oe 0.1 0.1 1 I C - Collector Current ( mA ) 10

18830

Figure 8. Relative h-Parameters vs. Collector Current

1000
f T - Gain-Bandwidth Product ( MHz )

Tamb = 25 C VCE = 10 V

5V 100

2V

10 0.1
18831

10 1 I C - Collector Current ( mA )

100

Figure 9. Gain-Bandwidth Product vs. Collector Current

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Vishay Semiconductors Packaging for Radial Taping
Dimensions in mm

VISHAY

12.7 1

0.3

0.2

12 0.3

1 -0.5

0.5

"H"

Vers. Dim. "H" FSZ 27 0.5

18

4 0.2

5.08 0.7 2.54 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1
+ 0.6 - 0.1

0.9 max

18787

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Document Number 85113 Rev. 1.2, 02-Nov-04

VISHAY
Package Dimensions in mm (Inches)

BC546 / 547 / 548

Vishay Semiconductors

4.6 (0.181)
4.6 (0.181)

3.6 (0.142)

max. 0.55 (0.022) 2.5 (0.098)

min. 12.5 (0.492)

Bottom View

18776

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Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 85113 Rev. 1.2, 02-Nov-04

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.