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54HSC/T Series
Radiation Hard High Speed CMOS/SOS Logic
Replaces May 1995 version, DS3594-3.3 DS3594-4.0 November 2002
The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset (SEU) immunity and the high level of radiation hardness of Silicon on Sapphire technology. The 54HSC/T Series of circuits are pin for pin compatible with the 54LS series range. HSC and HST devices have CMOS and TTL compatible inputs/outputs respectively.
Adders 54HSC/T283 4-bit binary full adders with fast carry Counters 54HSC/T161 4-bit synchronous binary counter 54HSC/T163 Synchronous 4-bit counter 54HSC/T191 Synchronous 4-bit counter Decoders/Demultiplexers 54HSC/T138 3-line to 8-line decoder/multiplexer 54HSC/T139 Dual 2 to 4 decoders/multiplexers 54HSC/T148 8-line to 3-line octal priority encoders 54HSC/T151 1 of 8 data selectors/multiplexers 54HSC/T154 4 to 16-line decoders/demultiplexers 54HSC/T157 Quad 2-line to 1-line data selectors/multiplexers 54HSC/T238 3 to 8 decoder/demultiplexer 54HSC/T253 Dual 4 to 1 data selectors/multiplexers Registers 54HSC/T164 8-bit parallel output serial shift register 54HSC/T165 Parallel load 8-bit shift register 54H5C/T166 8-bit shift register Comparators 54HSC/T521 8-bit magnitude comparator Line Drivers 54HSC/T240 54HSC/T241 54HSC/T244 54HSC/T540 54HSC/T541
FEATURES
s Radiation Hard to 1MRad (Si) s High SEU Immunity, Latch Up Free s Low Power CMOS/SOS Technology s Plug In Replacement for 54/74LS, HC and HCT s Dual In Line or Flatpack Packages Gates and Buffers 54HSC/T00 Quadruple 2-input positive NAND gates 54HSC/T02 Quadruple 2-input positive NOR gates 54HSC/TO3 Quadruple 2-input positive NAND gates with open collector outputs 54HSC/T04 Hex Inverters 54HSC/T08 Quadruple 2-input positive AND gates 54HSC/T10 Triple 3-input positive NAND gates 54HSC14 Hex schmitt-trigger inverters 54HSC/T21 Dual 4-input positive AND gates 54HSC/T27 Triple 3-input positive NOR gates 54HSC/T32 Quadruple 2-input positive OR gates 54HSC/T86 Quadruple 2-input Exclusive OR gates 54HSC/T125 Quadruple bus buffer gates with tri-state outputs (Active low enable) 54HSC/T126 Quadruple bus buffer gates wlth tri-state outputs (Active high enable) Flip-Flops 54HSC/T74 54HSC/T109 54HSC/T273 54HSC/T374 54HSC/T574
Octal 3-state driver inverting Octal 3-state driver complementary enable Octal 3-state driver Octal 3-state driver/buffer inverting Octal 3-state driver/buffer
Transceivers 54HSC/T245 OctaI bus transceiver Latches 54HSC/T373 Octal transparent latch, 3-state outputs 54HSC/T573 Octal transparent latch, 3-state outputs Miscellaneous 54HSC/T670 4 x 4 register files with tri-state outputs
Dual D-type flip-flops wlth preset and clear Dual J-KB flip-flop with preset and clear Octal D-type flip-flops Octal D-type edge triggered flip-flops Octal D-type edge triggered flip-flops
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54HSC/T Series
Total dose radiation not exceeding 3x105 Rad(SI) Symbol VDD VIH1 VIL1 VIH2 VIL2 VOH Parameter Supply Voltage HST Input High Voltage HST Input Low Voltage HSC Input High Voltage HSC Input Low Voltage Output High Voltage Conditions VIN = VIH or VIL IOH = -20A* IOH = 6mA* IOH = -11mA VIN = VIH or VIL IOL = -20A* IOL = 6mA* IOL = 9mA VIN = VDD or VSS All inputs VOUT = VDD or VSS Outputs disabled VIN = VDD Outputs unloaded Min. 4.5 2.0 3.5 VDD-0.1 3.7 2.5 Typ. 5.0 1 20 Max. 5.5 0.8 1.5 0.1 0.2 0.4 5 50 Units V V V V V V V V V V V A A A
VOL
VDD = 5V10%, over full operating temperature range. * Guaranteed but not tested. Refer to individual device types (-55C / +125C). Figure 2: Electrical Characteristics
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54HSC/T Series
Inputs A L L H H B L H L H
Outputs Y H H H L
1A 1B 1Y 2A 2B 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L L H H B L H L H
Outputs Y H L L L
1Y 1A 1B 2Y 2A 2B VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4Y 12 4B 11 4A 10 3Y 9 3B 8 3A
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
54HSC/T03 : Quadruple 2-Input Positive NAND Gates With Open Collector Outputs
The 54HSC/T03 is a Quadruple 2-Input Positive NAND gate with open collector output. Inputs A L L H H B L H L H Outputs Y H H H L
1A 1B 1Y 2A 2B 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
Figure 3: Pin Out +25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18 -55C / +125C Typ. 17 18 Max. 22 20 Units ns ns
Figure 4: Switching Characteristics Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics 5/101 Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 0.5 Units A V V V V V V A
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54HSC/T Series
Inputs A H L
1A 1Y 2A 2Y 3A 3Y VSS
1 2 3 4 5 6 7 Top View
14 VDD 13 6A 12 6Y 11 5A 10 5Y 9 4A 8 4Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L L H H B L H L H
Outputs Y L L L H
1A 1B 1Y 2A 2B 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L X X H B X L X H C X X L H
Outputs Y H H H L
1A 1B 2A 2B 2C 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 1C 12 1Y 11 3C 10 3B 9 3A 8 3Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L H
1A 1Y 2A 2Y 3A 3Y VSS
1 2 3 4 5 6 7 Top View
14 VDD 13 6A 12 6Y 11 5A 10 5Y 9 4A 8 4Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
1A 1B NC 1C 1D 1Y VSS
1 2 3 4 5 6 7 Top View
14 VDD 13 2D 12 2C 11 NC 10 2B 9 2A 8 2Y
Figure 1: Function Table +25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18 -55C / +125C Typ. 17 18 Max. 22 20 Units ns ns
Figure 4: Switching Characteristics Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics 10/101 Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L L L L H H H H B L L H H L L H H C L H L H L H L H
Outputs Y H L L L L L L L
1A 1B 2A 2B 2C 2Y 1 2 3 4 5 6 7 Top View 14 VDD 13 1C 12 1Y 11 3C 10 3B 9 3A 8 3Y
VSS
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L L H H B L H L H
Outputs Y L H H H
1A 1B 1Y 2A 2B 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Inputs A L L H H B L H L H
Outputs Y L H H L
1A 1B 1Y 2A 2B 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
+25C Symbol tPLH tPHL Parameter Propagation delay time, low to high level output Propagation delay time, high to low level output Typ. 11 10 Max. 20 18
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 300 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
54HSC/T125 : Quadruple Bus Buffer Gates with Tri-State Outputs (Active Low Enable)
The 54HSC/T125 is a Quadruple Bus Buffer Gate. When G is low the A input is transferred to the Y output. When G is high the output is in a high impedance state.
Inputs G L L H H A L H L H
Outputs Y L H Z Z
1G 1A 1Y 2G 2A 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4G 12 4A 11 4Y 10 3G 9 3A 8 3Y
+25C Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation delay A to Y Propagation delay A to Y Propagation delay G to Y Propagation delay G to Y Propagation delay Y to Tri-State Propagation delay Y to Tri-State Typ. 15 15 12 12 12 12 Figure 4: Switching Characteristics Max. 18 20 25 25 25 25
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54HSC/T Series
54HSC/T125 : Quadruple Bus Buffer Gates with Tri-State Outputs (Active Low Enable)
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 400 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
54HSC/T126 : Quadruple Bus Buffer Gates with Tri-State Outputs (Active High Enable)
The 54HSC/T126 is a Quadruple Bus Buffer Gate. When G is high the A input is transferred tp the Y output. When G is low the output is in a high impedance state.
Inputs G H H L L A L H L H
Outputs Y L H Z Z
1G 1A 1Y 2G 2A 2Y VSS 1 2 3 4 5 6 7 Top View 14 VDD 13 4G 12 4A 11 4Y 10 3G 9 3A 8 3Y
+25C Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation delay A to Y Propagation delay A to Y Propagation delay G to Y Propagation delay G to Y Propagation delay Y to Tri-State Propagation delay Y to Tri-State Typ. 14 15 15 17 17 15 Figure 4: Switching Characteristics Max. 25 25 25 25 25 25
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54HSC/T Series
54HSC/T126 : Quadruple Bus Buffer Gates with Tri-State Outputs (Active High Enable)
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 5: DC Characteristics Min. 2.5 3.5 2.0 Max. 10 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 400 0.4 1.5 0.8 5.0 Units A V V V V V V A
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54HSC/T Series
Output Q H L H* H L Q0 Q L H H* L H Q0
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay. Preset to Q or Q. Propagation delay. Preset to Q or Q. Propagation delay. Clear to Q or Q. Propagation delay. Clear to Q or Q. Propagation delay. Clock to Q or Q. Propagation delay. Clock to Q or Q. Typ. 15 16 18 15 17 18 Max. 20 20 20 20 25 25
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54HSC/T Series
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54HSC/T Series
Output Q H L H* L Q L H H* H
H L H H H H H
Toggle Toggle Q0 H Q0 Q0 L Q0
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay. Preset to Q or Q. Propagation delay. Preset to Q or Q. Propagation delay. Clear to Q or Q. Propagation delay. Clear to Q or Q. Propagation delay. Clock to Q or Q. Propagation delay. Clock to Q or Q. Typ. 15 16 17 15 18 15 Max. 19 25 25 25 25 25
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54HSC/T Series
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54HSC/T Series
Outputs Q L H L Q0
2D 2Q 3Q 3D 4D 4Q
VSS 10
Q0 = level of Q before inputs were established H = high level, L = low level, X = irrelevant
+25C Symbol tPLH tPHL tPLH tPHL Parameter Propagation delay. Clear to Q or Q. Propagation delay. Clear to Q or Q. Propagation delay. Clock to Q or Q. Propagation delay. Clock to Q or Q. Typ. 14 16 15 17 Max. 25 25 25 25
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54HSC/T Series
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54HSC/T Series
Inputs OC L L L H CLOCK L X D H L X X
Outputs Q H L Q0 Z
1D 2D 2Q 3Q 3D 4D 4Q
GND 10
Figure 1: Function Table Figure 2: Pin Out +25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay. Low to high output. Propagation delay. High to low output. Propagation delay. Enable to low. Propagation delay. Enable to high. Propagation delay. Disable from low. Propagation delay. Disable from high. Min. Typ. 14 15 13 16 14 13 Max. 22 22 20 20 20 18 Min. -55C / +125C Typ. 17 16 16 18 16 15 Max. 25 25 25 23 22 20 Units ns ns ns ns ns ns
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IOZ IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Tri-State Leakage Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VO = 0V or VDD VIN = VDD or VSS Figure 4: DC Characteristics 24/101 Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 1 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 50 5.0 Units A V V V V V V A A
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54HSC/T Series
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54HSC/T Series
Inputs OC L L L H CLOCK L X D H L X X
Outputs Q H L Q0 Z
2D 3D 4D 5D 6D 7D 8D
GND 10
Figure 1: Function Table Figure 2: Pin Out +25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay. Low to high output. Propagation delay. High to low output. Propagation delay. Enable to low. Propagation delay. Enable to high. Propagation delay. Disable from low. Propagation delay. Disable from high. Min. Typ. 16 19 13 16 14 13 Max. 25 27 21 24 22 21 Min. -55C / +125C Typ. 19 22 16 19 17 16 Max. 28 30 24 27 25 24 Units ns ns ns ns ns ns
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IOZ IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Tri-State Leakage Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VO = 0V or VDD VIN = VDD or VSS Figure 4: DC Characteristics 26/101 Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 1 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 50 5.0 Units A V V V V V V A A
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54HSC/T Series
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54HSC/T Series
Input
A1/A3 L H L H L H L H L H L H L H L H
B1/B3 L L H H L L H H L L H H L L H H
A2/A4 L L L L H H H H L L L L H H H H
B2/B4 L L L L L L L L H H H H H H H H
1/3
L H H L L H H L L H H L L H H L
2/4 C2/C4
L L L H H H H L H H H L L L L H L L L L L L L H L L L H H H H H
1/3
H L L H H L L H H L L H H L L H
2/4
L H H H H L L L H L L L L H H H
C2/C4 L L L L L H H H L H H H H H H H
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay. C0 to any . Propagation delay. C0 to any . Propagation delay. Ai or Bi to i. Propagation delay. Ai or Bi to i. Propagation delay. C0 to C4. Propagation delay. C0 to C4. Propagation delay. Ai or Bi to C4. Propagation delay. Ai or Bi to C4. Typ. 13 12 14 12 11 16 15 14 Max. 25 25 25 25 25 25 25 25
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54HSC/T Series
CARRY = H when QAQD = H, Q0 = previous level of Q H = high level, L = low level, X = irrelevant
1 2 3 4 5 6 7 8 Top View
Figure 2: Pin Out +25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPHL From (Input) CLOCK CLOCK CLOCK (Load Input HIGH) CLOCK (Load Input HIGH) CLOCK (Load Input LOW) CLOCK (Load Input LOW) ENABLE ENABLE CLEAR To (Output) RIPPLE CARRY RIPPLE CARRY Any Q Output Any Q Output Any Q Output Any Q Output RIPPLE CARRY RIPPLE CARRY Any Q Output Typ. 20 19 16 15 15 15 14 14 18 Max. 25 25 25 25 25 25 25 25 25 -55C / +125C Typ. 23 22 19 18 18 18 17 17 21 Max. 28 28 28 28 28 28 28 28 28 Units ns ns ns ns ns ns ns ns ns
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54HSC/T Series
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54HSC/T Series
CARRY = H when QAQD = H, Q0 = previous level of Q H = high level, L = low level, X = irrelevant
1 2 3 4 5 6 7 8 Top View
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay Clock to RCO Propagation delay Clock to RCO Propagation delay Clock to any Q Propagation delay Clock to any Q Propagation delay ENT to RCO Propagation delay ENT to RCO Typ. 12 14 15 13 9 10 Figure 3: Switching Characteristics Max. 20 20 20 20 15 15
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H = high level, L = low level, X = irrelevant, = low-to-high clock (CP) transition. Note: U/D or CE should be changed only when clock (CP) is high.
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay PL to Qn Propagation delay PL to Qn Propagation delay Pn to Qn Propagation delay Pn to Qn Propagation delay CP to Qn Propagation delay CP to Qn Propagation delay CP to RC Propagation delay CP to RC Propagation delay CP to TC Propagation delay CP to TC Propagation delay U/D to RC Propagation delay U/D to RC Propagation delay U/D to TC Propagation delay U/D to TC Propagation delay CE to RC Propagation delay CE to RC Typ. Figure 3: Switching Characteristics Max. 29 32 27 30 26 29 20 32 29 32 27 30 26 29 22 35
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P0 15 14 CP 5 U/D 11 PL
P1 1
P2 10
P3 9
13 RC
12 TC
PL P T CP FF0 Q Q P T CP
PL P Q Q T CP
PL P Q Q FF2 T CP
PL Q Q
FF1
FF3
4 CE
3 Q0
2 Q1
6 Q2
7 Q3
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1 2 3 4 5 6 7 8 Top View
16 VDD 15 Y0 14 Y1 13 Y2 12 Y3 11 Y4 10 Y5 9 Y6
+25C Symbol tPLH tPHL tPLH tPHL Parameter Propagation delay. Address to Output. Propagation delay. Address to Output. Propagation delay. G to Output. Propagation delay. G to Output. Typ. 17 19 21 21 Figure 3: Switching Characteristics Max. 25 25 25 25
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1 2 3 4 5 6 7 8 Top View
+25C Symbol tPLH tPHL tPLH tPHL Parameter Propagation delay. Address to Output. Propagation delay. Address to Output. Propagation delay. G to Output. Propagation delay. G to Output. Typ. 16 17 16 17 Figure 3: Switching Characteristics Max. 28 28 22 22
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I4 I5 I6 I7 EI A2 A1 VSS
1 2 3 4 5 6 7 8 Top View
16 VDD 15 EO 14 GS 13 I3 12 I2 11 I1 10 I0 9 A0
Figure 2: Function Table +25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay EI to A Propagation delay EI to A Propagation delay EI to GS Propagation delay EI to GS Propagation delay EI to EO Propagation delay EI to EO Propagation delay I to A Propagation delay I to A Typ. 14 15 15 15 14 15 12 14 Figure 3: Switching Characteristics 43/101 Max. 22 22 22 22 22 22 22 22 -55C / +125C Typ. 17 18 18 18 17 18 15 17 Max. 28 28 28 28 28 28 28 28 Units ns ns ns ns ns ns ns ns
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Output
D3 D2 1 2 3 4 5 6 7 8 Top View 16 VDD 15 D4 14 D5 13 D6 12 D7 11 A 10 B 9 C
W H D0 D1 D2 D3 D4 D5 D6 D7
D1 D0 Y W STR VSS
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay A B or C to Y Propagation delay A B or C to Y Propagation delay A B or C to W Propagation delay A B or C to W Propagation delay Strobe to Y Propagation delay Strobe to Y Propagation delay Strobe to W Propagation delay Strobe to W Propagation delay D0-D7 to Y Propagation delay D0-D7 to Y Propagation delay D0-D7 to W Propagation delay D0-D7 to W Typ. 15 16 14 15 14 16 14 15 12 14 12 14 Figure 3: Switching Characteristics Max. 22 22 22 22 22 22 22 22 22 22 22 22
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0 1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8 9 Top View
24 VDD 23 A 22 B 21 C 20 D 19 G2 18 G1 17 15 16 14 15 13 14 12 13 11
9 10 10 11 VSS 12
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Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 4: DC Characteristics Min. 2.5 3.5 2.0 Max. 100 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 5.0 Units A V V V V V V A
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SEL 1A 1B 1Y 2A 2B 2Y VSS
1 2 3 4 5 6 7 8 Top View
16 VDD 15 STR 14 4A 13 4B 12 4Y 11 3A 10 3B 9 3Y
+25C Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation delay A or B to Y Propagation delay A or B to Y Propagation delay Strobe to Y Propagation delay Strobe to Y Propagation delay Select to Y Propagation delay Select to Y Typ. 14 15 14 15 14 15 Figure 3: Switching Characteristics Max. 25 20 22 22 25 25
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 4: DC Characteristics 52/101 Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 5.0 Units A V V V V V V A
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Select Inputs A1 X X L L H H L L H H A0 X X L H L H L H L H O0 L L H L L L L L L L O1 L L L H L L L L L L O2 L L L L H L L L L L
Outputs O3 L L L L L H L L L L O4 L L L L L L H L L L O5 L L L L L L L H L L O6 L L L L L L L L H L O7 L L L L L L L L L H
A0 A1 A2 E1 E2 E3 O7 VSS
1 2 3 4 5 6 7 8 Top View
16 VDD 15 O0 14 O1 13 O2 12 O3 11 O4 10 O5 9 O6
+25C Symbol tPLH tPHL tPLH tPHL Parameter Propagation delay, address to output, low to high level output Propagation delay, address to output, high to low level output Propagation delay, enable to output, low to high level output Propagation delay, enable to output, high to low level output Typ. 16 17 19 19 Max. 24 25 27 27
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Select Inputs B X L L L L H H H H A X L L H H L L H H C0 X L H X X X X X X
Data Inputs C1 X X X L H X X X X C2 X X X X X L H X X
Output Y Z L H L H L H L H
1 2 3 4 5 6 7 8 Top View
+25C Symbol tPLH tPHL tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay Data to Output Propagation delay Data to Output Propagation delay Select to Output Propagation delay Select to Output Propagation delay Tri-state to Output Low Propagation delay Tri-state to Output High Propagation delay Low to Tri-state Propagation delay High to Tri-state Typ. 14 15 14 15 12 13 12 13 Max. 25 25 25 25 25 25 25 25
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H = high level, L = low level, X = irrelevant, = transition from low to high level. QAO, QBO, QHO = the level of QA, QB or QH, respectively, before the indicated steady-state input conditions were set up. QAN, QBN, QHN = the level of QA or QG before the latest transition of the clock. Indicates a one bit shift.
+25C Symbol tPLH tPHL tPHL Parameter Propagation delay. Q output from clock input, low to high level output. Propagation delay. Q output from clock input, high to low level output. Propagation delay. Q output from clear input, high to low level output. Typ. 15 15 15 Max. 25 25 25
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VIN = VDD or VSS Figure 4: DC Characteristics Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 400 0.4 1.5 0.8 5.0 Units A V V V V V V A
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H = high level, L = low level, X = irrelevant, = transition from low to high, a...h = the level of steady state inputs at inputs A through H. QO = level of Q before the indicated steady state input conditions were set up. QN = level of Q before the most recent active transition indicated by .
1 2 3 4 5 6 7 8 Top View
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Parameter Propagation delay. Load to Any Output. Propagation delay. Load to Any Output. Propagation delay. Clock to Any Output. Propagation delay. Clock to Any Output. Propagation delay. H to QH. Propagation delay. H to QH. Propagation delay. H to QBH. Propagation delay. H to QBH. Typ. 18 16 18 18 18 18 18 18 Figure 3: Switching Characteristics 60/101 Max. 25 25 25 25 25 25 25 25
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Inputs Clear L H H H H H Shift/ Load X X L H H X Clock Inhibit X L L L L H Clock X L Serial X X X H L X Parallel A...H X X a...h X X X
H = high level, L = low level, X = irrelevant, = transition from low to high, a...h = the level of steady state inputs at inputs A through H. QO = level of Q before the indicated steady state input conditions were set up. QN = level of Q before the most recent active transition indicated by .
1 2 3 4 5 6 7 8 Top View
+25C Symbol tPHL tPHL tPLH Parameter Propagation delay. Clear to QH. Propagation delay. Clock to QH. Propagation delay. Clock to QH. Typ. 15 15 15 Figure 3: Switching Characteristics Max. 25 25 25
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G P0 Q0 P1 Q1 P2 Q2 P3 Q3
1 2 3 4 5 6 7 8 9 Top View
20 VDD 19 P = Q 18 Q7 17 P7 16 Q6 15 P6 14 Q5 13 P5 12 Q4 11 P4
VSS 10
Figure 3: Logic Diagram +25C Symbol tPLH tPHL tPLH tPHL Parameter Propagation delay. P or Q to PN = QN. Propagation delay. P or Q to PN = QN. Propagation delay. GN to PN = QN. Propagation delay. GN to PN = QN. Typ. 15 16 14 15 Max. 25 25 25 25 -55C / +125C Typ. 18 19 17 18 Max. 28 28 28 28 Units ns ns ns ns
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1 2 3 4 5 6 7 8 9 Top View
VSS 10
+25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, disable from low. Propagation delay, disable from high. Typ. 12 14 19 14 22 21 Max. 20 22 27 22 30 30
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1 2 3 4 5 6 7 8 9 Top View
VSS 10
+25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, low to disable. Propagation delay, high to disable. Typ. 11 13 19 19 22 21 Max. 19 21 27 27 30 30
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1 2 3 4 5 6 7 8 9 Top View
VSS 10
+25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, low to disable. Propagation delay, high to disable. Typ. 11 13 19 15 19 18 Max. 21 21 25 20 25 25
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EA I0 I1 I2 I3 I4 I5 I6 I7
1 2 3 4 5 6 7 8 9 Top View
20 VDD 19 EB 18 O0 17 O1 16 O2 15 O3 14 O4 13 O5 12 O6 11 O7
VSS 10
+25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, low to disable. Propagation delay, high to disable. Typ. 13 13 21 16 24 23 Max. 21 21 29 24 32 31
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EA I0 I1 I2 I3 I4 I5 I6 I7
1 2 3 4 5 6 7 8 9 Top View
20 VDD 19 EB 18 O0 17 O1 16 O2 15 O3 14 O4 13 O5 12 O6 11 O7
VSS 10
+25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, low to disable. Propagation delay, high to disable. Typ. 11 13 17 16 24 23 Max. 19 21 21 24 21 21
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DIR A0 A1 A2 A3 A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 Top View
20 VDD 19 E 18 B0 17 B1 16 B2 15 B3 14 B4 13 B5 12 B6 11 B7
VSS 10
Figure 3: Logic Diagram +25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay, low to high level output. Propagation delay, high to low level output. Propagation delay, enable to low level. Propagation delay, enable to high level. Propagation delay, low to disable. Propagation delay, high to disable. Typ. 10 11 21 16 24 24 Max. 19 19 26 25 28 28 -55C / +125C Typ. 13 14 24 19 27 27 Max. 23 23 30 28 33 33 Units ns ns ns ns ns ns
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OC 1Q 1D 2D 2Q 3Q 3D 4D 4Q
1 2 3 4 5 6 7 8 9 Top View
20 VDD 19 8Q 18 8D 17 7D 16 7Q 15 6Q 14 6D 13 5D 12 5Q 11 C
VSS 10
Figure 2: Pin Out +25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay. Low to high output. Propagation delay. High to low output. Propagation delay. Enable to low. Propagation delay. Enable to high. Propagation delay. Low to disable. Propagation delay. High to disable. Min. Typ. 15 14 13 16 14 13 Max. 20 20 25 20 25 25 Min. -55C / +125C Typ. 20 21 14 18 18 19 Max. 24 24 25 24 25 25 Units ns ns ns ns ns ns
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IOZ IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Tri-State Leakage Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VO = 0V or VDD VIN = VDD or VSS Figure 4: DC Characteristics 79/101 Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 1 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 50 5.0 Units A V V V V V V A A
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OC 1D 2D 3D 4D 5D 6D 7D 8D
1 2 3 4 5 6 7 8 9 Top View
20 GND 19 1Q 18 2Q 17 3Q 16 4Q 15 5Q 14 6Q 13 7Q 12 8Q 11 C
VSS 10
Figure 2: Pin Out +25C Symbol tPLH tPHL tPZL tPZH tPLZ tPHZ Parameter Propagation delay. Low to high output. Propagation delay. High to low output. Propagation delay. Enable to low. Propagation delay. Enable to high. Propagation delay. Low to disable. Propagation delay. High to disable. Min. Typ. 19 19 13 16 14 13 Max. 24 24 21 24 22 21 Min. -55C / +125C Typ. 22 22 16 19 17 16 Max. 29 29 24 27 25 24 Units ns ns ns ns ns ns
Limits +25C Symbol IDD VOL VOH VIL1 VIH1 VIL2 VIH2 IOZ IIN Parameter Quiescent Current Output Voltage Low Level Output Voltage High Level Voltage Input Low (CMOS) Voltage Input High (CMOS) Voltage Input Low (TTL) Voltage Input High (TTL) Tri-State Leakage Input Leakage Current Test Conditions VIN = 0V or VDD IOL = 9mA IOH = -11mA VO = 0V or VDD VIN = VDD or VSS Figure 4: DC Characteristics 81/101 Min. 2.5 3.5 2.0 Max. 20 0.4 1.5 0.8 1 0.5 -55C / +125C Min. 2.5 3.5 2.0 Max. 600 0.4 1.5 0.8 50 5.0 Units A V V V V V V A A
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Outputs 2 W1D2 W2D2 W3D2 W4D2 Z 3 W1D3 W2D3 W3D3 W4D3 Z 4 W1D4 W2D4 W3D4 W4D4 Z
Q0 Q=D Q0 Q0 Q0
Q0 = level of Q before inputs were established H = high level, L = low level, X = irrelevant
+25C Symbol tPLH tPHL tPLH tPHL tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation delay. Read select to Q. Propagation delay. Read select to Q. Propagation delay. Write enable to Q. Propagation delay. Write enable to Q. Propagation delay. Data to Q. Propagation delay. Data to Q. Propagation delay. Read Enable to Q. Propagation delay. Read Enable to Q. Propagation delay. Read Enable to Q. Propagation delay. Read Enable to Q. Typ. 25 18 18 18 27 23 18 18 18 18 Max. 30 25 25 25 35 25 25 25 25 25
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CHARACTERISATION DATA
Device base listing as below: MA9003 Base 00 02 03 04 08 10 14 21 27 32 74 86 109 125 126 148 151 157 164 253 Pin Count 14 14 14 14 14 14 14 14 14 14 14 14 16 14 14 16 16 16 14 16 MA9007 Base 154 161 163 165 166 191 273 283 670 Pin Count 24 16 16 16 16 16 20 16 16 BMS011 Base 138 139 238 240 241 244 245 373 374 521 540 541 573 574 Pin Count 16 16 16 20 20 20 20 20 20 20 20 20 20 20
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15
10
0
1 10 FREQUENCY (MHz) 100
300
IOZL Vs TEMP.
30
BMS011 Base 9007 Base
25 20
9003 Base
IOZL (-A)
Idd (A)
15 10 5 0
-100
-50
50
100
150
20
40
60
80
100
120
140
TEMPERATURE (deg C)
TEMPERATURE (deg C)
IOZH Vs TEMP.
300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (deg C) BMS011 Base 9007 Base 9003 Base 350 300 250
IIL Vs TEMP.
9003 Base
IOZH (nA)
IIL (-nA)
200 150 100 50 0 0 20 40 60 80 100 TEMPERATURE (deg C) 120 140 9007 Base BMS011 Base
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IIH Vs TEMP.
VOL Vs TEMP.
0.22 9007 Base BMS011 Base
0.2 0.18
IIH (nA)
9003 Base
20
40
60
80
100
120
140
TEMPERATURE (deg C)
TEMPERATURE (deg C)
VOH Vs TEMP.
4.1 4.0 3.9
VOH (V)
VOL Vs IOL
MA9003 Base 0.4 Hot (125) Room Temp. Cold (-55)
9003 Base VOL (V) 9007 Base BMS011 Base 80 100 120 140
0.3
0.2
0.1
TEMPERATURE (deg C)
VOL Vs IOL
MA9007 Base 0.4 Hot (125) 0.3 VOL (V) Room Temp. Cold (-55) 0.3 VOL (V) 0.4
VOL Vs IOL
BMS011 Base Hot (125) Room Temp. Cold (-55) 0.2
0.2
0.1
0.1
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VOH Vs IOH
MA9003 Base 4.5 4.3 4.1 VOH (V) 3.9 3.7 3.5 3.3 0 Vdd = 4.5V 2 4 6 8 IOL (-mA) Vdd = 4.5V 10 12 14 16 Cold (-55) Room Temp. Hot (125) VOH (V) 4.5 4.3 4.1 3.9 3.7 3.5 3.3 0 2 4
VOH Vs IOH
MA9007 Base
VOH Vs IOH
BMS011 Base 4.5 4.3 4.1 VOH (V) 3.9 3.7 3.5 3.3 0 Vdd = 4.5V 2 4 6 8 IOL (-mA) 10 12 14 16 Cold (-55) Room Temp. Hot (125)
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O/P VOLTAGE
O/P VOLTAGE
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TIMING DIAGRAMS
Figure 3: Set-Up Times, Hold Times, Removal Time and Propagation Delay Times
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RADIATION TOLERANCE
Total Dose (Function to specification)* Transient Upset (Stored data loss) Transient Upset (Survivability) Neutron Hardness (Function to specification) Single Event Upset** Latch Up 3x105 Rad(Si) 1x1011 Rad(Si)/sec >1x1012 Rad(Si)/sec >1x1015 n/cm2 <1x10-10 Errors/bit day Not possible
* Other total dose radiation levels available on request ** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit Figure 5: Radiation Hardness Parameters
ORDERING INFORMATION
Radiation Tolerance No tolerance implied Blank Radiation Hard Processing S 100 kRads (Si) Guaranteed R 300 kRads (Si) Guaranteed Q H 1000 kRads (Si) Guaranteed* * HSC Only
54xHSC139xxxxx 54xHST139xxxxx
QA/QCI Process (See Section 9 Part 4)
Package Type C F L N Ceramic DIL (Solder Seal) Flatpack (Solder Seal) Leadless Chip Carrier Naked Die
For details of reliability, QA/QC, test and assembly options, see Manufacturing Capability and Quality Assurance Standards Section 9.
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These offices are supported by Representatives and Distributors in many countries world-wide. Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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