Department of Electrical & Electronics Engineering

CLASS SEMESTER

: II YEAR EEE : III SEM

SUBJECT CODE : 131351 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS LAB

131351CIRCUITS AND DEVICES LABORATORY

LIST OF EXPERIMENTS: S. No. 1. 2. 3.. 4. 5. 6. 7. TITLE
Characteristics of PN Junction diode Zener diode and Rectifier Applications Bipolar Junction transistor -CE, CB, CC characteristics Characteristics of FET Characteristics & UJT Characteristics of SCR , DIAC and TRIAC Characteristics of Photo diode, phototransistor Single phase half wave and full wave rectifiers with inductive and capacitive filters.

8 9. 10 11. 12.

Characteristics of BJT Amplifier frequency response Characteristics of FET amplifier frequency response Characteristics of Class B amplifier Darlington pair Characteristics of Differential amplifier PSPICE modeling of electronic circuits

Ex. No .1a CHARACTERISTICS OF PN JUNCTION DIODE

AIM: To draw the forward and reverse biased characteristics of PN junction diode and to find cut in voltage, break down voltage ,static resistance and dynamic resistance . APPARATUS REQUIRED: S.No 1 Components Regulated power supply Type/Range (0-30) V (0-30) mA 2 Ammeter (0-30) A (0-1) V 3 Voltmeter (0-10) V IN4001 1 K 1 1 1 1 As per required 1 1 Quantity 1 1

3 4 5 6

Diode Resistor Bread Board

Connecting Wire

PROCEDURE: FORWARD BIAS: 1. Connect the circuit as per the diagram. 2. Vary the applied voltage V in steps of 0.1V. 3. Note down the corresponding Ammeter readings I. 4. Plot a graph between V & I OBSERVATIONS: 1. Find the d.c (static) resistance = V/I. 2. Find the a.c (dynamic) resistance r = V / I (r = V/I) =

V2 V1 . I 2 I1

3. Find the forward voltage drop = [Hint: it is equal to 0.7 for Si and 0.3 for Ge]

REVERSE BIAS: 1. Connect the circuit as per the diagram. 2. Vary the applied voltage V in steps of 1.0V. 3. Note down the corresponding Ammeter readings I. 4. Plot a graph between V & I 5. Find the dynamic resistance r = V / I. FORMULA FOR REVERSE SATURATION CURRENT (IO): Io = I/[exp(V/VT)]-1

Where

VT is the voltage equivalent of Temperature = kT/q

k is Boltzmanns constant, q is the charge of the electron and T is the temperature in degrees Kelvin. =1 for Silicon and 2 for Germanium CIRCUIT DIAGRAM: FORWARD BIAS:
+ +

TABULAR COLUMN: FORWARD BIAS: S.No. VOLTAGE (In Volts) CURRENT (In mA)

REVERSE BIAS:
(0-500)A
1K

+ a

+ (0-30)V -

(0-30)V -

TABULAR COLUMN: REVERSE BIAS: S.No. VOLTAGE (In Volts) CURRENT (In A)

MODEL GRAPH
If (mA) I2

Vb ( Volts)

I1 V1 V2 Ic(a) Vf (Volts)

RESULT: Thus the forward and reverse biased characteristics of PN junction diode were drawn and also cut in voltage, break down voltage, static resistance and dynamic resistance were calculated.

Ex.No.1 b

CHARACTERISTICS OF ZENER DIODE

AIM: To plot VI characteristics of zener diode and (i) find break down voltage in reverse biased condition(ii) To calculate static resistance and dynamic resistance in both forward and reverse bias condition. APPARATUS REQUIRED: S.No 1 Components Regulated power supply Type/Range (0-30) V (0-30) mA 2 Ammeter (0-250) A (0-30) V 3 Voltmeter (0-2) V BZV10 1 K 1 1 1 1 As per required 1 1 Quantity 2 1

3 4 5 6

Zener Diode Resistor Bread Board

Connecting Wire

FORMULA USED: Static Resistance R =V/I Dynamic Resistance =V/I PROCEDURE: FORWARD BIAS: 1. Connect the circuit as per the circuit diagram. 2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the voltmeter till the needle of power supply shows 30V. 3. Note down the corresponding ammeter readings. 4. Plot the graph :V (vs) I. 5. Find the dynamic resistance r = V/I. REVERSE BIAS: 1. Connect the circuit as per the diagram. 2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the voltmeter till the needle of power supply shows 30V. 3. Note down the corresponding Ammeter readings I. 4. Plot a graph between V & I 5. Find the dynamic resistance r = V/I.

CIRCUIT DIAGRAM: FORWARD BIAS:

1K

(0-30)mA a + + BZV10 A K
1

(0-30) V -

+ (0-30) V -

TABULAR COLUMN: FORWARD BIAS: S.No. VOLTAGE (In Volts) CURRENT (In mA)

REVERSE BIAS:

TABULAR COLUMN: REVERSE BIAS: S.No. VOLTAGE (In Volts) CURRENT (In A)

RESULT: Thus VI characteristics of zener diode was drawn and breakdown voltage , static resistance and dynamic resistance were calculated.

Ex.No.2 a CHARACTERISTICS OF CE CONFIGURATION

AIM: To study the input and output characteristics of BJT in CE configuration. APPARATUS REQUIRED: S.No 1 2 Ammeter (01)A 3 Voltmeter (02)V 4 5 Resistor 1 K 6 7 Bread Board Connecting Wires 1 1 As per required Transistor CL - 100S 10 K 1 1 1 (030)V 1 1 Components Regulated power supply Type/Range (0-30) V (010)mA Quantity 2 1

PROCEDURE: INPUT CHARECTERISTICS: 1. Connect the circuit as per the circuit diagram. 2. Set VCE ,vary VBE in regular interval of steps and note down the corresponding IB reading. Repeat the above procedure for different values of VCE. 3. Plot the graph: VBE Vs IB for a constant VCE.

OUTPUT CHARACTERISTICS: 1.Connect the circuit as per the circuit diagram. 2.Set IB, Vary VCE in regular interval of steps and note down the corresponding IC reading. Repeat the above procedure for different values of IB. 3.Plot the graph: VCE Vs IC for a constant IB.

CIRCUIT DIAGRAM

MODEL GRAPH: INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

A IC
VCE = 0V VCE = 5V

mA

IB

IB=60A IB=40A IB=20A

VBE(V)

VCE(V)

TABULAR COLUMN: INPUT CHARACTERISTICS: VCE=1V VBE(V) IB(A) VBE(V) VCE=2V IB(A)

OUTPUT CHARACTERISTICS:

IB=20A VCE(V) IC(mA) VCE(V)

IB=40A IC(mA)

RESULT:
were drawn.

Thus the input and output characteristics of BJT in Common Emitter (CE) configuration

Ex.No.2b CHARACTERISTICS OF CB CONFIGURATION USING BJT

AIM: To study the input and output characteristics o f BJT in CE configuration. APPARATUS REQUIRED: S.No 1 2 Components Regulated power supply Ammeter Type/Range (0-30) V (010) mA Quantity 2 1

(01) A 3 Voltmeter (02) V 4 5 Resistor 1 k 6 7 Bread Board Connecting Wires Transistor CL - 100S 10 k (030) V

1 1 1 1 1 1 1 As per required

PROCEDURE: INPUT CHARACTERISTICS: It is the curve between emitter current IE and emitter-base voltage VBE at constant collectorbase voltage VCB. 1. Connect the circuit as per the circuit diagram. 2. Set VCE=5V, vary VBE in steps of 0.1V and note down the corresponding IB. Repeat the above procedure for 10V, 15V. 3 Plot the graph VBE Vs IB for a constant VCE.

OUTPUT CHARACTERISTICS: It is the curve between collector current IC and collector-base voltage VCB at constant emitter current IE. 1. Connect the circuit as per the circuit diagram. 2. Set IB=20A, vary VCE in steps of 1V and note down the corresponding IC. Repeat the above procedure for 40A, 80A, etc. 3. Plot the graph VCE Vs IC for a constant IB.

TABULAR COLUMN: INPUT CHARACTERISTICS: S.No. VCB = VEB (V) IE (A) V VCB = VEB (V) IE (A) V VCB = VEB (V) IE (A) V

OUTPUT CHARACTERISTICS:

S.No.

IE = VCB (V) Ic

mA

IE = VCB (V) Ic

mA

IE = VCB (V) Ic

mA

(mA)

(mA)

(mA)

MODEL GRAPH: INPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:

RESULT:Thus the input and output characteristics of BJT in Common Base(CB) configuration were drawn.

Ex.No.4b

CHARACTERISTICS OF UNIJUNCTION TRANSISTOR

AIM:To determine the characteristics of UJT APPARATUS REQUIRED: S.No 1 2 3 Voltmeter (010) V 4 UJT Resistor 6 7 Bread Board Connecting Wires
2N2646

Components Regulated power supply Ammeter

Type/Range (0-30) V (0-30) mA (030) V

Quantity 2 1 1 1 1 2 1 As per required

1 k -

FORMULA FOR INTRINSIC STANDOFF RATIO: = VP - VD/ VB1B2., where VD = 0.7V. PROCEDURE: 1.Connect the circuit as per the circuit diagram. 2.Set VB1B2 = 0V, vary VEB1 , & note down the readings of IE & VEB1 3.Set VB1B2 = 10V , vary VEB1 , & note down the readings of IE & VEB1 4.Plot the graph : IE Versus VEB1 for constant VB1B2. 5.Find the intrinsic standoff ratio.

CIRCUIT DIAGRAM:

TABULAR COLUMN: VB1B2 = 0 V VEB1 (V) IE (mA) VEB1 (V) VB1B2 = 10 V IE (mA)

Peak Voltage=.V

VP - VD/ VB1B2

MODEL GRAPH:

RESULT: Thus the characteristics of UJT were obtained and its operation was studied.

Ex.No.4a VI CHARACTERSTICS OF SCR

AIM: To determine the VI characteristics of given SCR at different gate currents. APPARATUS REQUIRED: S.No 1 2 3 Ammeter (0-10) mA 4 5 Resistor 1 k 6 7 Bread Board Connecting Wire 1 1 As per required Voltmeter (0-50) V 560 1 1 1 Components SCR Regulated power supply Type/Range SN102 (0-30) V (0-100) mA Quantity 1 1 1

PROCEDURE: 1. Make the connections as per the circuit diagram. 2. Switch ON the power supply. 3. Keep IG as constant. 4. Vary the voltage VAK step by step from 0V and note its corresponding anode current(IA) 5. Draw the graph in between VAK and IA. 6. Repeat the above procedure of 4 and 5 for different values of IG. 7.Switch OFF the power supply. 8. Disconnect the components.

CIRCUIT DIAGRAM:

TABULAR COLUMN: S.No IG = 0.1 mA VAK (Volts) IA (mA) IG = 0.2 mA VAK (Volts) IA (mA)

MODEL GRAPH:

RESULT :Thus VI characteristics of SCR for different values of IG are determined.

Ex.No.3a CHARACTERISTICS OF JUNCTION FIELD EFFECT TRANSISTOR

AIM:
To study the characteristics of JFET.

APPARATUS REQUIRED : S.No 1 2 3 4 Voltmeter (0-10) V 5 Resistor 1 k 6 7 PROCEDURE: DRAIN CHARACTERISTICS: 1. Connect the circuit as per the circuit diagram. 2. Set the gate voltage VGS = 0V. 3. Vary VDS in steps of 1 V & note down the corresponding ID. 4. Repeat the same procedure for VGS = -1V. 5. Plot the graph VDS Vs ID for constant VGS. Bread Board Connecting Wire 1 1 As per required 68 k 1 1 Components JFET Regulated power supply Ammeter Type/Range BFW11 (0-30) V (0-30)mA (0-30) V Quantity 1 2 1 1

OBSERVATIONS 1. d.c (static) drain resistance, rD = VDS/ID. 2. a.c (dynamic) drain resistance, rd = VDS/ID. 3. Open source impedance, YOS = 1/ rd.

TRANSFER CHARACTERISTICS: 1. Connect the circuit as per the circuit diagram. 2. Set the drain voltage VDS = 5 V. 3. Vary the gate voltage VGS in steps of 1V & note down the corresponding ID. 4. Repeat the same procedure for VDS = 10V. 5. Plot the graph VGS Vs ID for constant VDS.

FET PARAMETER CALCULATION: Drain Resistance rd =

VDS VGS I D I D VDS VGS

Transconductance gm =

Amplification factor =rd . gm

CIRCUIT DIAGRAM:

TABULAR COLUMN: DRAIN CHARACTERISTICS: VGS = 0V VDS (V) ID(mA) VGS = -1V VDS (V) ID(mA)

TRANSFER CHARACTERISTICS: VDS =5volts VGS (V) ID(mA) VDS = 10volts VGS (V) ID(mA)

MODEL GRAPH: DRAIN CHARACTERISTICS:

ID (mA)

VGS = 0V VGS = -1V

VGS = -2V VGS = -3V

VDS (volts)

TRANSFER CHARACTERISTICS:

ID(mA)

VDS =Const

VGS (V) RESULT: Thus the drain and transfer characteristics of JFET was obtained and the graph is plotted.

Ex.No.5 a

VI CHARACTERSTICS OF DIAC

AIM: To determine the VI characteristics of DIAC and find out its breakdown voltage. APPARATUS REQUIRED : S.No 1 2 3 4 5 6 7 Components DIAC Regulated power supply Ammeter Voltmeter Resistor Bread Board Connecting Wire Type/Range D3202 (0-30) V (0-100)mA (0-100) V 470 Quantity 1 2 1 1 1 1 As per required

PROCEDURE: 1. Make the connections as per the circuit diagram. 2. Switch ON the power supply. 3. Vary the applied voltage step by step. 4. Take its corresponding ammeter readings. 5. Repeat the above procedure of 3 and 4 for reverse biasing also. 6. Draw the graph in between voltage and current. 7. Note its breakdown voltage.

8. Switch OFF the power supply. 9. Disconnect the components. CIRCUIT DIAGRAM: FORWARD BIAS:

TABULAR COLUMN: S.No VF (Volts) IF(mA)

REVERSE BIAS:

TABULAR COLUMN: S.No VR (Volts) IR (mA)

MODEL GRAPH:

RESULT: The VI characteristics of DIAC are determined .The breakdown voltage of DIAC is . Volts.

Ex.No.5b

V-I CHARACTERSTICS OF TRIAC

AIM: To determine the VI characteristics of given TRIAC at different gate current. APPARATUS REQUIRED : S.No 1 2 3 Ammeter (0-10)mA 4 5 6 7 PROCEDURE: 1. Make the connections as per the circuit diagram. 2. Switch ON the power supply. 3. Keep the gate current (IG) as constant. 4. Vary the applied terminal voltage (VT) step by step from 0 V. 5. Take its corresponding ammeter reading (IT). 6. Repeat the above procedures of 3 , 4 and 5 for different gate currents. 7. Draw the graph in between voltage VT and current IT. Voltmeter Resistor Bread Board Connecting Wire (0-100) V 470 1 1 2 1 As per required Components TRIAC Regulated power supply Type/Range T2801 (0-30) V (0-100)mA Quantity 1 2 1

8. Note its breakdown voltage. 9. Switch OFF the power supply. 10. Disconnect the components. CIRCUIT DIAGRAM:

TABULAR COLUMN: S.No IG = 2 mA VT (Volts) IR (mA) IG = 2 mA VT (Volts) IR (mA)

MODEL GRAPH:

RESULT: The VI characteristics of TRIAC are determined with different gate currents .The breakdown voltage of TRIAC is . Volts and breakdown current is .mA.

Ex.No.6 CHARACTERISTICS OF PHOTO-DIODE AND PHOTOTRANSISTOR

AIM: 1. To study the characteristics of a photo-diode. 2. To study the characteristics of phototransistor. APPARATUS REQUIRED: S.No 1 2 3 4 5 6 7 8 Components
Photo diode

Type/Range (0-30) V (0-30)mA (0-30) V 1 K -

Quantity 1 2 1 1 2 1 1 As per required

Regulated power supply Ammeter Voltmeter Resistor Bread Board Photo transistor Connecting Wire

PROCEDURE: PHOTO DIODE: 1. Rig up the circuit as per the circuit diagram. 2. Maintain a known distance (say 5 cm) between the DC bulb and the photo diode. 3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode insteps of 1V and note down the corresponding diode current, Ir. 4. Repeat the above procedure for the various voltages of DC bulb. 5. Plot the graph: VD vs. Ir for a constant DC bulb voltage. PHOTOTRANSISTOR: 1. Rig up the circuit as per the circuit diagram. 2. Maintain a known distance (say 5 cm) between the DC bulb and the phototransistor. 3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode in steps of 1V and note down the corresponding diode current, Ir. 4. Repeat the above procedure for the various values of DC bulb. 5. Plot the graph: VD vs. Ir for a constant bulb voltage.

CIRCUIT DIAGRAM IN PHOTODIODE:

TABULAR COLUMN S.No. VOLTAGE (In Volts) CURRENT (In mA)

MODEL GRAPH:

CIRCUIT DIAGRAM IN PHOTOTRANSISTOR:

TABULAR COLUMN: S. No. VCE (in Volts) IC (in mA)

MODEL GRAPH:

RESULT: Thus the characteristics of photo diode and phototransistor are studied.

Ex.No.6 SINGLE PHASE HALF WAVE AND FULL WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM: To study the waveform o the single phase half wave and full wave rectifier with and without filter APPARATUS REQUIRED : S.No 1 2 3. 4 5 6. Components Diode Capacitor CRO Voltmeter Resistor Transformer Type/Range IN4001 1f (0-100) V 1K 230V/6V Quantity 1 2 1 1 1 1

7 8

Bread Board Connecting Wire

1 As per required

FORMULA FOR HALF WAVE RECTIFIER 1.WITHOUT FILTER: (a)Vdc=Vm/ (b)Vrms= Vm/2 (c)Ripple factor / = 2.WITH FILTER: (a) Vdc=Vm=Vrpp/2 (b) Vrms=Vrpp/23 (c)Ripple Factor= Vrms/ Vdc 3.BRIDGE RECTIFIER: (a) Vdc=2Vm/ (b) Vrms= Vm /2 (Vrms Vdc)2

(c)Ripple Factor= =

(Vrms Vdc)2-1

Vdc=Average value of dc voltage Vm=Maximum supply voltage Vrpp=RMS value of the voltage Vrms=Ripple voltage

PROCEDURE: SINGLE PHASE HALF WAVE RECTIFIER: 1.Connections are made as per circuit diagram 2.Ac supply is switched on 3.Note down the input and output waveforms in CRO for filter and without filter connections 4.Then the graph is plotted according to the input output waveforms SINGLE PHASE FULL WAVE RECTIFIER: 1.Connections are made as per circuit diagram 2.Ac supply is switched on
3.Set the input and note down

the input and output waveforms in CRO

4.Then the graph is plotted according to the input output waveforms 5.Then the graph is plotted according to the input output waveforms CIRCUIT DIAGRAM: HALF WAVE RECTIFIER (WITHOUT FILTER):

WITH FILTER:

FULL WAVE RECTIFIER (WITH FILTER):

TABULAR COLUMN
SINGLE PHASE HALF WAVE RECTIFIER

WITHOUT FILTER:
S.NO Vm(v)

Vdc(V)

Vrms (V)

Resistance

Ripple factor

WITH FILTER:
S.NO Vm(v)

Vdc(V)

Vrms (V)

Resistance

Vrpp(V)

Ripple factor

FULL WAVE RECTIFIER

WITHOUT FILTER
S.NO Vm(v)

Vdc(V)

Vrms (V)

Resistance

Ripple factor

WITH FILTER:
S.NO Vm(v)

Vdc(V)

Vrms (V)

Resistance

Vrpp(V)

Ripple factor

MODEL GRAPH:

RESULT: Thus the waveforms characteristics of half wave and full wave rectifier were Vdc, Vrms and ripple factor were calculated.

Ex.No.6 FREQUENCY RESPONSE OF BJT AMPLIFIER AIM: To obtain the frequency response of BJT amplifier

APPARATUS REQUIRED : S.No 1 2 3. 4. 5. 6 7 8. 9 10 11 Components Transistor Capacitor Capacitor Inductor CRO Breadboard Resistor Transformer Resistor Single generator Connecting Wire As per required Type/Range BC107 4.7f 0.001mf 100mf/25v 1mf/25V 12K 230V/6V 6K Quantity 1 1 1 1 1 1 1 1 1

PROCEDURE: 1.Circuit Connections are given as per the circuit diagram 2.A required voltage through fn is supplied into circuit. 3.The output is viewed through CRO 4.Using CRO Amplitude and Time periods are calculated 5.From the Time period of Oscillations the frequency is calculated 6. The graph is drawn with the plotted reading Frequency = 1/Time period CIRCUIT DIAGRAM

TABULAR COLUMN:
S.No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db (20logAv)

MODELGRAPH:

RESULT: Thus the frequency response curve of the amplifier was drawn and the gain is calculated

Exp.No.6 CHARACTERISTICS OF FET AMPLIFIER FREQUENCY RESPONSE AIM: To determine the parameter of the single stage JFET amplifier (common drain amplifier)
1.Band width 2.Midband Gain 3.Input and Output Impedance

APPARATUS REQUIRED : S.No 1 2 3. 4. 5. 6 7 8. 9 Components Power supply CRO Capacitor Capacitor CRO Breadboard Resistor Resistor Resistor Type/Range 1f 31.8f 1mf/25V 1K 100 K 600 Quantity 1 1 1 1 1 1 1 1 1

10 10 11 12.

Resistor Function generator Connecting Wire Capacitor

1.2 k 5.835f

1 1 As per required 1

PROCEDURE: 1.Circuit Connections are given as per the circuit diagram 2.A required voltage through fn is supplied into circuit. 3.The output is viewed through CRO 4.Using CRO Amplitude and Time periods are calculated 5.From the Time period of Oscillations the frequency is calculated 6. The graph is drawn with the plotted reading Frequency = 1/Time period CIRCUIT DIAGRAM:

TABULAR COLUMN:
S.No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db (20logAv)

MODEL GRAPH:

RESULT: Thus the frequency response curve of the FET amplifier was drawn and the gain is calculated

Exp.No.7 CHARACTERISTICS OF CLASS-B P OWER AMPLIFIER AIM: To design and construct a Class-B power Amplifier and to determine its efficiency. APPARATUS REQUIRED :
S.No 1. 2. 3.

Components
Power supply CRO Function generator

Type/Range
(0-30)V (0-30)V (0-1)MHz 1 1 1

Quantity

PROCEDURE:
1. Connect the Circuit as per the circuit diagram, 2. Set Vs=50mV(say),using the signal generator. 3.Keeping the INPUT voltage constant ,Vary the frequency from 0 Hz to 1 Hz in Regular steps and note down the corresponding output voltage. 4.Plot the graph : gain(db) Vs frequency 5, Find the input and output Impedance Input Impedance, Zi=Vi Rs/(Vs+Vi) Output impedance, Zo= Vload Vno load/(V load) *100 6.Calculate the Bandwidth from the graph. 7.Note down the phase angle ,bandwidth,input and output impedance. 8.Calculate the efficiency,n=Po/Pin.

CIRCUIT DIAGRAM:

TABULAR COLUMN:
S.No Vo(volts) Gain=Vo/Vs Gain(db)=20log(Vo/Vs)OUTPUT Po=Vo2/2RL n%

MODEL

GRAPH:

RESULT: Thus the efficiency of the Class-B power amplifier curve is drawn successfully

Exp.No.8 CHARACTERISTICS OF DIFFERENTIAL AMPLI FIER AIM: To design and construct a Class-B power Amplifier and to determine its efficiency. APPARATUS REQUIRED : S.No 1 2 3. 5. 6 7 8. 9 DCB 10 FORMULA Common mode rejection ratio=Ad/Ac Ad=Differential mode gain Ac=Common mode gain where Ad=Vo/Vd, Vo=output voltage measured. Vd=V1 V2 ;V1 V2= input voltage Ac=Vo/Vc , Vc=(V1+V2)/2. PROCEDURE: DRB 600 1.2 k Components RPS (0-30)V Signal generator Capacitor CRO Breadboard Transistor Resistor Type/Range 470f 1mf/25V BC107 3.9 K Quantity 1 1 1 1 1 1 1 1

DIFFERENTAIL MODE: 1. Connect the Circuit as per the diagram, 2.Set V1=50mV and V2=65Mv using the signal generator. 3.Find the corresponding output voltages across V01 and V02 using CRO. 4.Calculate Common mode rejection ratio using the given formula. COMMON MODE: 1.Connect the circuit as per the diagram . 2.Set V1=50Mv using the signal generator . 3.Find the output voltage across V0 using multimeter. 4.Calculate the common mode rejection ratio using the given formula CIRCUIT DIAGRAM: DIFFERENTIAL MODE:

COMMON MODE:

TABULAR COLUMN:

DIFFERENTIAL MODE:
S.No V1 V2 Output voltage Vd=V1-V2

Ad=V0/Vd

COMMON MODE:
S.No

Input voltage

Output voltage

Vd=V1-V2

Vc=(V1+V2)/2.

Ac=Vo/Vc ,

RESULT: Thus the differential amplifier was verified for common mode and differential mode configuration Further common mode rejection ratio was found

Exp.No.8 P SPICE- MODELLING OF ELECTRONIC CIRCUITS AIM: To draw the PSPICE modeling of electronics circuits using PCM AP PARATUS REQUIRED: 1.P SPICE software 2.PCM PROCEDURE: 1.Start - All programs- read family Capture lite edition 2.Window will open . 3.Open New- Project. 4.Pspice Project Dialog Box will Open Create new 5.Take the symbols from the library. 6. Give the values for all components 7. Set the (frequency) time period for required waveform. 8.Fit the voltage marker to measure the voltage at I/p and O/p . 10.Do the run process to get the output.

CIRCUITDIAGRAM:

MODEL GRAPH:

RESULT : Thus Pspice modelling of electronic devices is drawn and output is executeed successfully