DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1741TP

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain

The PA1741TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES
High voltage: VDSS = 250 V Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.79 MAX. (VGS = 10 V, ID = 2.5 A) Low input capacitance Ciss = 340 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode Small and surface mount package (Power HSOP8)
1.49 0.21 1.44 TYP.
1 5.2 +0.17 0.2 4 0.8 0.2 S
+0.10 0.05

6.0 0.3 4.4 0.15

0.05 0.05

0.15

1.27 TYP. 0.40

1
+0.10 0.05

0.10 S 0.12 M

ORDERING INFORMATION
2.9 MAX.

2.0 0.2 9 4.1 MAX.

PART NUMBER

PACKAGE Power HSOP8

8

PA1741TP

ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise noted. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1

VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg

Note2

250 30 5.0 15 21 1 150 55 to +150 5.0 2.5 5.0 2.5

V V A A W W C C A mJ A mJ
Gate Protection Diode Source Gate Body Diode Drain

1.1 0.2

EQUIVALENT CIRCUIT

Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3 Note4 Note4

IAS EAS IAR EAR

Repetitive Avalanche Current

Repetitive Pulse Avalanche Energy Notes 1. 2. 3. 4.

PW 10 s, Duty Cycle 1% Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm Starting Tch = 25C, VDD = 125 V, RG = 25 , L = 100 H, VGS = 20 0 V Tch(peak) 150C, L = 100 H

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16373EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan

2003

 PA1741TP
ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise noted. All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note

SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD

TEST CONDITIONS VDS = 250 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 125 V, ID = 2.5 A VGS = 10 V RG = 10

MIN.

TYP.

MAX. 10 10

UNIT

A A
V S

2.5 2

3.5 3.5 0.63 340 70 30 11 8 20 6

4.5

Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note

0.79

pF pF pF ns ns ns ns nC nC nC

VDD = 200 V VGS = 10 V ID = 5.0 A IF = 5.0 A, VGS = 0 V IF = 5.0 A, VGS = 0 V di/dt = 100 A/s

11 2 5.5 0.9 120 400 1.5

VF(S-D) trr Qrr

V ns nC

Note Pulsed: PW 800 s, Duty Cycle 2%

TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L VDD PG. RG

VGS RL VDD VDS

90% 90% 10% 10%

VGS
Wave Form

10%

VGS

90%

BVDSS IAS ID VDD VDS

VGS 0 = 1 s Duty Cycle 1%

VDS

VDS
Wave Form

0 td(on) ton

tr

td(off) toff

tf

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA PG. 50

RL VDD

Data Sheet G16373EJ1V0DS

 PA1741TP
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 25

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W

100

20

80

15

60

10

40

20

0 0 25 50 75 100 125 150 175

0 0 25 50 75 100 125 150 175

TC - Case Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

100 T C = 25C Single pulse ID (pulse) = 15 A PW = 100 s

ID - Drain Current - A

10

I D (D C ) = 5.0 A 1 ms

10 m s DC R D S(on) Lim ited (at V G S = 10 V) Power Dissipation Lim ited

0.1

0.01 0.1 1 10 100 1000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - C/W

Rth(ch-A) = 125C/W 100

10

Rth(ch-C) = 5.95C/W

Single pulse Rth(ch-A):Mounted on glass epoxy board (1 inch x 1inch x 0.8 mm), TA = 25C Rth(ch-C):TC = 25C
1m 10 m 100 m 1 10 100 1000

0.1 100

PW - Pulse Width - s

Data Sheet G16373EJ1V0DS

 PA1741TP

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

20 Pulsed VGS = 10 V

FORWARD TRANSFER CHARACTERISTICS

100 10 Pu lsed V D S = 10 V

ID - Drain Current - A

15

ID - Drain Current - A

1 0.1 0.01 0.001 T A = 150C 125C 75C 25C 25C

10

0 0 5 10 15 20

0.0001 0 5 10 15

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
4.5 100

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

V D S = 10 V Pulsed 10 T A = 25C 25C 75C 125C 150C

VGS(off) - Gate Cut-off Voltage - V

V DS = 10 V ID = 1 mA 4

3.5

0.1

2.5

2 -50 -25 0 25 50 75 100 125 150

0.01 0.01

0.1

10

100

Tch - Channel Temperature - C

ID - Drain Current - A

RDS(on) - Drain to Source On-state Resistance -

RDS(on) - Drain to Source On-state Resistance -

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 100 Pulsed V GS = 10 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 2 4 6 8 10 12 14 16 18 20 ID = 5 A 2.5 A 1A Pulsed

ID - Drain Current - A

VGS - Gate to Source Voltage - V

Data Sheet G16373EJ1V0DS

 PA1741TP

RDS(on) - Drain to Source On-state Resistance -

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

2

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

1000

Ciss, Coss, Crss - Capacitance - pF

1.75 1.5 1.25

V G S = 10 V Pulsed

C iss

100 C o ss

ID = 5.0 A 1 0.75 2.5 A 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150

10 C rss VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000

Tch - Channel Temperature - C

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS
100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

2 50 15 I D = 5 .0 A 2 00 V D D = 2 00 V 1 25 V 6 2.5 V 12

t d(off) 10 t d(on) tr tf

1 50

1 00

VGS VDS

50

1 0.1 1 10 100

0 0 1 2 3 4 5 6 7 8 9 10 11 12

ID - Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100 1000 Pulsed V GS = 0 V 10

REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT

di/dt = 100 A/s VGS = 0 V

trr - Reverse Recovery Time - ns

IF - Diode Forward Current - A

100

10

0.1

0.01 0 0.25 0.5 0.75 1 1.25 1.5

1 0.1 1 10 100

VF(S-D) - Source to Drain Voltage - V

IF - Diode Forward Current - A

Data Sheet G16373EJ1V0DS

VGS - Gate to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

V DD 125 V V DD ==125 V 10 V VS V GG S==10 V R R GG==00

VDS - Drain to Source Voltage - V

 PA1741TP

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

10
100

SINGLE AVALANCHE ENERGY DERATING FACTOR

V DD = 125 V R G = 25 V G S = 20 0 V I AS 5.0 A

IAS - Single Avalanche Current - A

Energy Derating Factor - %

IAS = 5.0 A

VDD = 125 V RG = 25 VGS = 20 0 V

80

60

EAS = 2.5 mJ

40

20

0.1 0.01

0.1

10

25

50

75

100

125

150

L - Inductive Load - mH

Starting Tch - Starting Channel Temperature - C

Data Sheet G16373EJ1V0DS

 PA1741TP

The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1