STUDY OF TRANSISTOR CHARACTERISTICS

8-SHRIKANT KUNJ, M.N. PATANKAR MARG, KURLA(W) MUMBAI, 400070. PH- 09869112159
Email-matrixel@gmail.com

STUDY OF TRANSISTOR CHARACTERISTICS

Bipolar Junction Transistor - (BJT) Both holes and electrons participate in the conduction of current, hence the name bipolar. Minority carrier In a p-type semiconductor electrons are the minority carrier type, in an n-type semiconductor holes are the minority carrier type. Emitter Emits minority carriers into the base region of a BJT. For example, in an NPN BJT the n-type emitter, emits electrons into the p-type base. The emitter usually has the highest doping levels of the three regions of a BJT. Base - Thin region which is used to control the flow of minority carriers from the emitter to the collector Collector - Collects the minority carriers that make it through the base from the emitter. The collector usually has the lightest doping concentrations of the three regions. DC Beta (dc ) Large signal current gain (or hFE) The ratio of the collector current to the base current. dc = IC / IB AC Beta (ac ) Small signal current gain (or hfe) The ratio of the change in the collector current to the change in the base current. ac = D IC / D IB Practical 1: AIM : To study Common Emitter (CE) of BJT. In this lab, transistor current-voltage (I-V) characteristics of Common Emitter (CE) circuit will be investigated. Material and Equipment : Matrix trainer kit, digital voltmeter Theory : The bipolar junction transistor(BJT) can be modeled as a current controlled current source. The circuit symbol and the pin out for the actual device can be seen in Figure 1.

As an aid in visualizing the current/voltage relationships and transistor operation, a family of static characteristics plots of collector current versus collector-emitter voltage for several values of base current are plotted using circuit in Fig. 2.

Figure 2: CE configuration circuit using npn transistor

Figure 3-3: Characteristic curves for the BJT transistor.(CE) These curves in Fig. 3-3 can be used to calculate the large signal current gain _DC (or hFE) and the small signal current gain, _AC(or hfe). These values are in general calculated for a given bias point ICQ, VCEQ using the following equations:

From this, one can see that a large signal gain depends only on the Q point and the small signal gain depends only on small deviations around the Q point. Procedure 1) Transistor Common-Emitter Collector Characteristics using IV Measurement 2) Connect the MAINS Chord to AC mains put S5 To CE position to connected transistor in COMMON EMITTER mode as circuit shown in Figure 4 below. 3) Put S1 to + position (R.H.S.) for +ve base to emitter supply & S4 to + position (R.H.S.) for +ve collector to emitter supply.

Figure I-V Measurement Set-up 4) Put S6 to Down side to measure Ib (I1) in uA , Put S2 to 2nd middle position to get 10K resistance & Set P1 for 10.0 on display for 100uA. (display shows divided by 10 reading for I1) 5) Put S6 to up position to measure Ic (I2) in mA Put S3 to 1st position to get 470 resistance, Put S7 to up position to measure Vce (V2) in volts and Set P1 in steps of 0.05V to plot characteristics. 6) Measure (record) the collector current IC and the voltage across collector and emitter (VCE) . 7) Repeat the procedure for different values of Ib (vary Ib from 0-200A in steps of 10A).( fallow step 4 for Ib setting) 8) Plot the V-I characteristics with IC on Y-axis and VCE on X-axis. 9) Calculate DC and AC from the curves. 10) Calculate transconductance parameter gm.

1) What is the average value of DC and AC for the BC548 transistor? 2) Give the expressions for DC, AC. 3) Determine the collector resistance at VCE = 6V, and IB = 50microamperes. Use the following expression : Vce / Ic Ib = constant

CE TEST READINGS Ib = 100uA Ic mA 3.9 10 15.9 20.3 22 23.3 24.3 25.3 26.2 27 28 28.8 29.5 30.2 30.9 31.6 32.2 32.7 33.2 33.7 34.7 Vce V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 0.1 0.11

Transistor Common-Emitter Base Characteristics: 1) Put S6 to Down side to measure Ib (I1) in uA , Put S2 to 2nd middle position to get 10K resistance & Set P1 for 00.0 on display. (display shows divided by 10 reading for I1) 2) Put S3 to 1st position to get 470 resistance, Put S7 to up position to measure Vce (V2) in volts and Set P1 in steps of 0 to plot input characteristics. 3) Put S7 to down position to measure Vbe (V2) - VBB in volts, Vary VBB from 0-2V insteps of 0.2V by P1, and measure (record ) the base current and the voltage across base and the emitter 4) Repeat the procedure for different values of VCE. (0V, 0.1V, 1V, 2V ) 5) Plot the V-I characteristics with IB(A)on Y-axis and VBE on X-axis. 6) Calculate the base spreading resistance rb.

Practical 2: AIM : To study Common Collector (CC) of BJT. In this lab, transistor current-voltage (I-V) characteristics of Common Emitter (CC) circuit will be investigated. Material and Equipment : Matrix trainer kit , digital voltmeter Procedure 1) Transistor Common-Emitter Collector Characteristics using IV Measurement 2) Connect the MAINS Chord to AC mains put S5 To CE position to connected transistor in COMMON EMITTER mode as circuit shown in Figure 4 below. 3) Put S1 to + position (R.H.S.) for +ve base to emitter supply & S4 to + position (R.H.S.) for +ve collector to emitter supply.

Figure I-V Measurement Set-up 4) Put S6 to Down side to measure Ib (I1) in uA , Put S2 to 2nd middle position to get 10K resistance & Set P1 for 10.0 on display for 100uA. (display shows divided by 10 reading for I1) 5) Put S6 to up position to measure Ic (I2) in mA Put S3 to 1st position to get 470 resistance, Put S7 to up position to measure Vce (V2) in volts and Set P1 in steps of 0.05V to plot characteristics. 6) Measure (record) the collector current IC and the voltage across collector and emitter (VCE) . 7) Repeat the procedure for different values of Ib (vary Ib from 0-200A in steps of 10A).( fallow step 4 for Ib setting) 8) Plot the V-I characteristics with IC on Y-axis and VCE on X-axis. 9) Calculate DC and AC from the curves. 10) Calculate transconductance parameter gm.

CC TEST READINGS Ib = + 69uA Ie mA - 7.5 -17.2 -20.4 -22.6 -24.4 -26.2 -27.6 -29 -30.4 -31.3 Vec V -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

The final transistor amplifier configuration (Figure below) we need to study is the common-base. This configuration is more complex than the other two, and is less common due to its strange operating characteristics.

Common-base amplifier It is called the common-base configuration because (DC power source aside), the signal source and the load share the base of the transistor as a common connection point shown in Figure below.

Common-base amplifier: Input between emitter and base, output between collector and base. Perhaps the most striking characteristic of this configuration is that the input signal source must carry the full emitter current of the transistor, as indicated by the heavy arrows in the first illustration. As we know, the emitter current is greater than any other current in the transistor, being the sum of base and collector currents. In the last two amplifier configurations, the signal source was connected to the base lead of the transistor, thus handling the least current possible. Because the input current exceeds all other currents in the circuit, including the output current, the current gain of this amplifier is actually less than 1 (notice how Rload is connected to the collector, thus carrying slightly less current than the signal source). In other words, it attenuates current rather than amplifying it. With common-emitter and common-collector amplifier configurations, the transistor parameter most closely associated with gain was . In the common-base circuit, we follow another basic transistor parameter: the ratio between collector current and emitter current, which is a fraction always less than 1. This fractional value for any transistor is called the alpha ratio, or ratio. Since it obviously can't boost signal current, it only seems reasonable to expect it to boost signal voltage.

Practical 3: AIM : To study Common Base (CB) of BJT. In this lab, transistor current-voltage (I-V) characteristics of Common Emitter (CB) circuit will be investigated. Material and Equipment : Matrix trainer kit , digital voltmeter Procedure 1) Transistor Common-Emitter Collector Characteristics using IV Measurement 2) Connect the MAINS Chord to AC mains put S5 To CE position to connected transistor in COMMON EMITTER mode as circuit shown in Figure 4 below. 3) Put S1 to + position (R.H.S.) for +ve base to emitter supply & S4 to + position (R.H.S.) for +ve collector to emitter supply.

Figure I-V Measurement Set-up 4) Put S6 to Down side to measure Ib (I1) in uA , Put S2 to 2nd middle position to get 10K resistance & Set P1 for 10.0 on display for 100uA. (display shows divided by 10 reading for I1) 5) Put S6 to up position to measure Ic (I2) in mA Put S3 to 1st position to get 470 resistance, Put S7 to up position to measure Vce (V2) in volts and Set P1 in steps of 0.05V to plot characteristics. 6) Measure (record) the collector current IC and the voltage across collector and emitter (VCE) . 7) Repeat the procedure for different values of Ib (vary Ib from 0-200A in steps of 10A).( fallow step 4 for Ib setting) 8) Plot the V-I characteristics with IC on Y-axis and VCE on X-axis. 9) Calculate DC and AC from the curves. 10) Calculate transconductance parameter gm.

CB TEST READINGS Ie =- 8mA Ic mA 1.8 6.7 7.7 8 8 8 8 8 8 8 8 Vcb V -0.78 0.7

-0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 1 2