6

THE COUPLED-DIODE MODEL

B
W
x
( )
B B
P x W =
0 B
P 0 B
P
0
( ) 0
BO B
P P x + =
( )
B
P x

Figure 6-1:
Emitter-base junction is forward biased and collector base junction is forward biased.
2 THE COUPLED DIODE MODEL Chapter 6
B
W
x
0 B
P 0 B
P
0
( ) 0
BO B
P P x + =
( )
B
P x

Figure 6-2:
Emitter-base junction is forward biased and collector base junction is grounded.
B
W
x
( )
B B
P x W =
0 B
P 0 B
P
0
( )
B
P x

Figure 6-2:
Emitter-base junction is grounded and collector base junction is forward biased.

( ) ( ) 0 0
1
EB
qV
n n n
kT
n n
p x p p x
e
p p
| | = =
= =
|
\ .
(6.1)

( ) ( )
1
CB
qV
n n n b
kT
n n
p x W p p x W
e
p p
| | = =
= =
|
|
\ .
(6.2)
Electronics of Semiconductor Devices 3
p
n
p
n
n
p
C B E
B
x W = 0 x =
p
n
p
n
n
p
C B E
B
x W = 0 x =
saturation
active mode
EB
V
CB
V
p
n
p
n
n
p
C B E
B
x W = 0 x =
p
n
p
n
n
p
C B E
B
x W = 0 x =
inverted
cut-off
( )
0
0
EB
qV
kT
B n
P x P e = =
( )
0
CB
qV
kT
B B n
P x W P e = =
( )
0
0
EB
qV
kT
B n
P x P e = =
( ) 0
B B
P x W = =
( ) 0 0
B
P x = =
( )
0
CB
qV
kT
B B n
P x W P e = =
( ) 0 0
B
P x = =
( ) 0
B B
P x W = =

EBERS-MOLL EQUATIONS
The one dimensional npn transistor can be represented as two pn junction diodes
connected back-to-back with common p region, named base as shown in figure 6-
20. In the active mode of operation, the emitter base junction is forward biased. The
emitter diode current
F
I which crosses the base-emitter junction is exponential
function of the emitter base bias voltage,
EB
V . A large portion of this current
F F
I reaches to collector.
F
is the forward common-base current gain. In the inverted
mode of operation, the collector base junction is forward bias. The diode collector
4 THE COUPLED DIODE MODEL Chapter 6
current
R
I , which crosses the collector base bias junction, is also exponential function
of the collector base bias voltage
CB
V . A large portion of this current ,
R R
I reaches to
emitter,
R
is the reverse common base current gain.
F
I
R
I
R R
I
F F
I
B
I
C
I
E
I
C
B
E

Figure 6-20: Circuit diagram of pnp transistor of Ebber-Moll model

1
EB
qV
kT
F ES
I I e
| |
=
|
\ .
(6.3)

1
CB
qV
kT
R CS
I I e
| |
=
|
|
\ .
(6.4)

E F R R
I I I =
(6.5)

C F F R
I I I =
(6.6)

( ) ( ) 1 1
B E C F F R R
I I I I I = = +
(6.7)

( ) ( ) 1 1 1 1
CB EB
qV qV
kT kT
B F ES R CS
I I e I e
| | | |
= +
| |
|
\ . \ .
(6.8)

1 1
CB EB
qV qV
kT kT
E ES R CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.9)
Electronics of Semiconductor Devices 5

1 1
CB EB
qV qV
kT kT
C F ES CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.10)
For
B B
W L >> Then
ES
I and
CS
I are simply of diode

0 0
E B
ES E B
E B
D D
I qA n p
L L

= +


(6.11)

0 0
C B
CS C B
C B
D D
I qA n p
L L

= +


(6.12)
In general

( )
/
0
1
1
sinh
EB
qV kT E
ES B
E
B
D
I qA p e
W
L
L


=





( )
/
0
1
1
sinh
qVCB kT B
B
B B
B
D
qA P e
L W
L
| |
|
|

|
| |
|
|
|
\ . \ .
(6.13)

( )
/
0 0
coth 1
EB
qV kT C B B
CS C B
C B B
D D W
I qA n p e
L L L
| |
= +
|
\ .


( )
/
0 0
coth 1
EB
qV kT C B B
C B
C B B
D D W
qA n p e
L L L
| |
+
|
\ .
(6.14)

0
csc
B B
F ES R CS B
B B
D W
I I qA p
L L

| |
= =
|
\ .
(6.15)

F DC
=
(6.16)
For
B B
W L >>
6 THE COUPLED DIODE MODEL Chapter 6

2
0
1
1
1
2
F DC
E E B B
B BO E B
n D W W
D P L L
= =
| |
+ +
|
\ .
(6.17)
in general

0
0 0
csch
coth
B B
B
B B
F
E B B
E B
B B B
D W
qA p
L L
D D W
qA n p
L L L
=
| |
+
|
\ .
(6.18)

0
0
1
cosh sinh
F
E B E B B
B B E B B
n W D L W
L L L P L
=
| | | | | |
+
| | |
\ . \ . \ .
(6.19)

( ) ( )
0
0 0
0 0
1
EB
qV
B B B
kT
B B
p x p p
e
p p
=
= =
(6.20)

( ) ( )
0
0 0
1
CB
qV
B B B B B
kT
B B
p x W p p W
e
p p
=
= =
(6.21)
For active mode common base 0
EB
V > , 0
CB
V <

1 1
CB EB
qV qV
kT kT
E ES R CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.22)

1
EB
qV
kT
E ES R CS
I I e I
| |
= +
|
\ .
(6.23)

1
EB
qV
kT
C F ES CS
I I e I
| |
= +
|
\ .
(6.24)

1
EB
qV
E R CS kT
ES
I I
e
I
| |
=
|
\ .
(6.25)

( ) 1
C F E F R CS
I I I = +
(6.26)
Electronics of Semiconductor Devices 7

0 C DC E CB
I I I = +
(6.27)
where

( ) 1
CBO R F CS
I I =
(6.28)
F
I
R
I
R R
I
F F
I
B
I
C
I
E
I
C
B
E

Figure 6-21: Circuit diagram of npn transistor of Ebber-Moll model

1
BE
qV
kT
F ES
I I e
| |
=
|
\ .
(6.29)

1
BC
qV
kT
R CS
I I e
| |
=
|
|
\ .
(6.30)

E F R R
I I I =
(6.31)

C F F R
I I I =
(6.32)

B E C
I I I =
(6.33)
R
= Reverse gain
F
= Forward gain
F ES R CS
I I = where the N= Normal mode I=Inverted mode.
I
= Reverse gain
F
= Forward gain
8 THE COUPLED DIODE MODEL Chapter 6
ES
I = The emitter saturation current when 0
CB
V = .
CS
I = The collector saturation current when 0
EB
V = .

1 1
BC BE
qV qV
kT kT
E ES R CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.34)

1 1
BC BE
qV qV
kT kT
C F ES CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.35)

( ) ( ) 1 1 1 1
CB EB
qV qV
kT kT
B E C F ES R CS
I I I I e I e
| | | |
= = +
| |
|
\ . \ .
(6.36)

0 0
coth
E B B
ES E B
E B B
D D W
I qA n p
L L L
| |
= +
|
\ .
(6.37)

0 0
coth
C B B
CS C B
C B B
D D W
I qA n p
L L L
| |
= +
|
\ .
(6.38)

0
csc
B B
F ES R CS B
B B
D W
I I qA p
L L

| |
= =
|
\ .
(6.39)

0
0
sinh
pB
B
b
pB
pB
F
nE
E
nE
D
P
qA
W
L
L
D
qA n
L
=

+


(6.40)

( ) ( )
0
0 0
0 0
1
EB
qV
B B B
kT
B B
p x p p
e
p p
=
= =
(6.41)

( ) ( )
0
0 0
1
CB
qV
B B B B B
kT
B B
p x W p p W
e
p p
=
= =
(6.42)
The Diode Connections of Bipolar Junction Transistor
Electronics of Semiconductor Devices 9
E B C
A
V
I
E B
A
V
I
(2)
(1)
I I
(6)
(5)
I
I
(4)
(3)
p
+
n
p
+

p
+
n
p
p
+
n
p
+

p
+
p
+
p
+
n
n n
p
p p
A
V
+

A
V
+

A
V
+

A
V
+

E B
A
V
I
p
+
n
p
+

C
B
E
B
I
E
I I =
A
V
+

1) , , and 0
E A EB C
I I V V I = = =

1 1 0
CB EB
qV qV
kT kT
C F ES CS
I I e I e
| | | |
= =
| |
|
\ . \ .
(6.43)
then:

1 1
CB EB
qV qV
kT kT
F ES CS
I e I e
| | | |
=
| |
|
\ . \ .
(6.44)
10 THE COUPLED DIODE MODEL Chapter 6

1 1
CB EB
qV qV
F ES kT kT
CS
I
e e
I
| | | |
=
| |
|
\ . \ .
(6.45)

1 1
EB EB
qV qV
N ES kT kT
E ES R CS
Cs
I
I I I e I e
I

| | | | | |
= =
| | |
\ . \ . \ .
(6.46)

( ) 1 1
A
qV
kT
E R F ES
I I I e
| |
= =
|
\ .
(6.47)

( )
0
0
1 1
EB A
qV qV
B
kT kT
B
P
e e
P
| | | |
= =
| |
\ . \ .
(6.48)

( ) ( )
0
0 0
0 0
1 1
EB A
qV qV
B B B
kT kT
B B
p p x p
e e
p p
| | | | =
= = =
| |
\ . \ .
(6.49)

( )
0 0
0
A
qV
kT
B B
p x p e = =
(6.50)

( )
0
1 1 1
CB EB EB
qV qV qV
B B F ES kT kT kT
R
B CS
p W I
e e e
p I

| | | | | |
= = =
| | |
|
\ . \ . \ .
(6.51)

( )
0
1
A
qV
B B
kT
R
B
p W
e
p

| |
=
|
\ .
(6.52)

( ) ( )
0
0 0
1
A
qV
B B B B B
kT
R
B B
p W p x W p
e
p p

| | =
= =
|
\ .
(6.53)

( )
0
1 1
A
qV
B B
kT
R
B
p x W
e
p

| | =
= +
|
\ .
(6.54)

( )
0 0
1
A
qV
kT
B B B R B
p x W p e p
| |
= = +
|
\ .
(6.55)

( )
0
A
qV
kT
B B R B
P x W P e = =
(6.56)
Electronics of Semiconductor Devices 11
1a) If
A
kT
V
q
>>

( )
0
0
A
qV
kT
B B
p x p e = =
(6.57)

( )
0 0 0 0
1
A A
qV qV
kT kT
B B R B B R B B
p x W p e p p e p
| |
= = + = +
|
\ .
(6.58)

Notice ( )
B B
P x W = is slightly less than ( ) 0
B
P x = , because it is multiplied by
R
:


( ) ( ) 0
B b I
P x W P x = = =
(6.59)

( )
0
A
qV
kT
B B I B
P x W P e = =
(6.60)
( )
B b
P x W = ( ) 0
B
P x =
( )
B
P x
0 x =
b
x W =

1b) If
A
kT
V
q
>>

( )
0
0 0
A
qV
kT
B B
p x p e = =
(6.61)

( ) ( )
0 0 0
1 1 0
A
qV
kT
B B B R B R B
p x W P e p p
| |
= = + =
|
\ .
(6.62)
if 1
R
=
12 THE COUPLED DIODE MODEL Chapter 6
( )
B
P x
0 x =
B
x W =
x


C E B
A
V
I
(2)
p
+
n
p
+

C
B
E
E
I I =
A
V
+

EB A
V V =
,
0
CB
V =
, and
E
I I =
(6.63)

1 1
EB A
qV qV
kT kT
E ES ES
I I I e I e
| | | |
= = =
| |
\ . \ .
(6.64)

( )
0
0
1 1
EB A
qV qV
B
kT kT
B
p
e e
p
| | | |
= =
| |
\ . \ .
(6.65)

( ) ( )
0
0 0
0 0
1
A
qV
B B B
kT
B B
p p x p
e
p p
| | =
= =
|
\ .
(6.66)

( )
0
0
A
qV
kT
B B
p x p e = =
(6.67)

( )
0
1 0
CB
qV
B B
kT
B
p W
e
p
| |
= =
|
|
\ .
(6.68)
Electronics of Semiconductor Devices 13

( ) ( )
0
0 0
0
B B B B B
B B
p W p x W p
p p
=
= =
(6.69)

( )
0 B B B
p x W p = =
(6.70)
If
A
kT
V
q
>>

( )
0
0
A
qV
kT
B B
p x p e = =
(6.71)

( )
0 B B B
p x W p = =
(6.72)
0 B
P
( ) 0
B
P x =
( )
B
P x
0 x =
b
x W =
x

2b) If
A
kT
V
q
>>
(6.73)

( )
0
0 0
A
qV
kT
B B
p x p e = = =
(6.74)

( )
0 B B B
p x W p = =
(6.75)
14 THE COUPLED DIODE MODEL Chapter 6
0 B
P
( )
B
P x
0 x =
b
x W =
x

I
(3)
p
+
n
p
A
V
+

C
B
E
E
I I =
A
V
+

3)
EB CB A
V V V = , and
E C
I I I = =
Equating the Ebber-Moll relationship for
E
I and
C
I .

E C
I I =
(6.76)

1 1 1 1
CB CB EB EB
qV qV qV qV
kT kT kT kT
ES R CS F ES CS
I e I e I e I e
| | | | | | | |
=
| | | |
| |
\ . \ . \ . \ .
(6.77)

( ) ( ) 1 1 1 1
CB EB
qV qV
kT kT
F ES R CS
I e I e
| | | |
=
| |
|
\ . \ .
(6.78)

( )
( )
1
1 1
1
CB EB
qV qV
R CS
kT kT
F ES
I
e e
I

| | | |
=
| |
|

\ . \ .
(6.79)

1 1 1 1
CB CB EB A A A
qV qV qV qV qV qV
kT kT kT kT kT kT
e e e e e e
| | | | | | | |
= = +
| | | |
| |
\ . \ . \ . \ .
(6.80)
Electronics of Semiconductor Devices 15

( )
( )
1
1 1
1
CB A A
qV qV qV
R CS
kT kT kT
F ES
I
e e e
I

| || | | |
+ =
| | |
| |

\ . \ . \ .
(6.81)

( )
( ) ( )
( )
( )
0
1
1 0
1
1 1
1
A
EB
A
qV
kT
qV
R CS B
kT
qV
F ES B I CS
kT
N ES
e
I P
e
I P I
e
I

| |

|
| |
\ .
= =
|
| |
\ .
+
|
|

\ .
i
(6.82)

( )
( )
( )
0
1
1
1
1
A
CB
A
qV
kT
qV
B b
kT
qV
B R CS
kT
F ES
e
P W
e
P I
e
I

| |

|
| |
\ .
= =
|
|
| |
\ .
+
|
|

\ .
(6.83)

( )
( ) ( )
1 1
1 1
A
A
qV
kT
F R CS ES
qV
kT
F ES R CS
I I e
I
I e I


| |

|
\ .
=
+
(6.84)
If
( )
( )
1
1
1
R CS
F ES
I
I

=
(6.85)
Then:

( ) ( )
0 0
0
1
1
A
A
qV
kT
B B b
qV
B B
kT
P x P x W
e
P P
e
= =

= =
+
(6.86)
If
A
kT
V
q
>>

( ) ( )
0 0
0
1
B B b
B B
P x P x W
P P
= =
= =
(6.87)

( )
0
0
B B
P x P = =
(6.88)

( )
0 B b B
P x W P = =
(6.89)
16 THE COUPLED DIODE MODEL Chapter 6

( ) ( )
0 0 0 0
0 0 2
B B B B B B
P x P x P P P P = = = + = + =
(6.90)

( ) ( )
0 0 0
0
B b B b B B B
P x W P x W P P P = = = + = + =
(6.91)
( )
B
P x
0 x =
b
x W =
x
0
2
B
P

If
A
kT
V
q
>>

( ) ( )
0 0
0
1
B B B
B B
P x P x W
P P
= =
= =
(6.92)

( ) 0 0
B
P x = =
(6.93)

( )
0
2
B b B
P x W P = =
(6.94)
0
2
B
P
( )
B
P x
0 x =
b
x W =
x

Electronics of Semiconductor Devices 17
I
(4)
p
+
n p
A
V
+

C
B
E
A
V
+

E
I I =

4)
B
I I = and
EB CB A
V V V = =

( ) ( ) 1 1 1 1
CB EB
qV qV
kT kT
B E C F ES R CS
I I I I e I e
| | | |
= = +
| |
|
\ . \ .
(6.95)

( ) ( ) 1 1 1
A
qV
kT
F ES R CS
I I I e
| |
= +
|

\ .
(6.96)
If the
A
kT
V
q
>>

( ) ( )
0 0
0
1
A
qV
B B b
kT
B B
P x P x W
e
P P
| | = =
= =
|
\ .
(6.97)
B
W
x 0
( )
B
p x
( ) 0
B
p x =
0 B
p
0 B
p
( )
B B
p x W =
( ) 0
B
P x =
( )
B B
P x W =

If the
A
kT
V
q
>>

18 THE COUPLED DIODE MODEL Chapter 6
x
B
W
0
( )
B
p x

I
p
+
n p
A
V
+

C
B
E
A
V
+

(5)

5)
C
I I = ,
CB A
V V = and 0
E
I =

1 1
CB EB
qV qV
kT kT
ES R CS
I e I e
| | | |
=
| |
|
\ . \ .
(6.98)

1 1
CB EB
qV qV
R CS kt kT
ES
I
e e
I
| | | |
=
| |
|
\ . \ .
(6.99)

( ) 1 1
CB Cb
qV qV
I CS kT kT
C N ES CS
ES
I
I I I e I e
I

| | | | | |
= = +
| | |
| |
\ .\ . \ .
(6.100)

( ) 1 1
A
qV
kT
F R CS
I I e
| |
=
|
\ .
(6.101)

( )
0
0
1 1
EB A
qV qV
B R CS kT kT
B ES
P x I
e e
P I
| | | | = | |
= =
| | |
\ . \ . \ .
(6.102)

( )
0
1 1
CB A
qV qV
B b
kT kT
B
P x W
e e
P
| | | | =
= =
| |
|
\ . \ .
(6.103)
Electronics of Semiconductor Devices 19

( )
0
0
1
A
qV
B
kT
F
B
P x
e
P

| | =
=
|
\ .
(6.104)

( )
0
1
A
qV
B b
kT
B
P x W
e
P
| | =
=
|
\ .
(6.105)
If the
A
kT
V
q
>>
B
W
x 0
( )
B
p x
( ) 0
B
p x =
0 B
p
0 B
p
( )
B B
p x W =
( ) 0
B
P x =
( )
B B
P x W =

x
B
W
0
( )
B
p x

I
(6)
p
+
n p
A
V
+

E
I I =
C
B
B
I
+
A
V
-

6) 0
EB
V = ,
CB A
V V = and
C
I I =
20 THE COUPLED DIODE MODEL Chapter 6

1
A
qV
kT
CS
I I e
| |
=
|
\ .
(6.106)

( )
0
0
1 0
EB
qV
B
kT
B
P x
e
P
| | =
= =
|
\ .
(6.107)

( )
0
1 1
CB A
qV qV
B b
kT kT
B
P x W
e e
P
| | | | =
= =
| |
|
\ . \ .
(6.108)
If the
A
kT
V
q
>>
( )
B B
P x W =
( )
B
P x
0 x =
b
x W =
x

( )
B
p x
x
B
W 0

Electronics of Semiconductor Devices 21
Small-signal equivalent circuits
2-por t model common emitter configur ation
Bipolar
Juntion
Transistor
CE ce
V v +
+

C c
I i +
C
E
B
E
+

BE be
V v +
B b
I i +

, , ,
BE CE B C
v v i i are instantaneous voltages and currents
, , ,
BE CE B C
V V I I are DC voltages and currents
, , ,
be ce b c
V V I I are AC voltages and currents

( ) ,
B BE CE
i f v v =
(6.109)

( ) ,
B BE CE
I f V V =
(6.110)

( ) ,
b be ce
i f v v =
(6.111)

( ) ( ) ( ) , , ,
B BE BE CE CE B BE CE b be ce
i V v V v I V V i v v + + = +
(6.112)

( ) ( ) ( ) , , ,
C BE BE CE CE C BE CE c be ce
i V v V v I V V i v v + + = +
(6.113)

( ) ( ) ( ) , , ,
b be ce B BE BE CE CE B BE CE
i v v i V v V v I V V = + +
(6.114)

( ) ( ) ( ) , , ,
c be ce C BE BE CE CE C BE CE
i v v i V v V v I V V = + +
(6.115)
Taylor series expansion about the DC operating point

( ) ( ) , ,
B B
B BE BE CE CE B BE CE be ce
CE BE BE CE
i i
i V v V v I V V v v
V V V V

+ + = + +
(6.116)
22 THE COUPLED DIODE MODEL Chapter 6

( ) ( ) , ,
C C
C BE BE CE CE C BE CE be ce
CE BE BE CE
i i
i V v V v I V V v v
V V V V

+ + = + +
(6.117)

B B
b be ce
CE BE BE CE
i i
i v v
V V V V

= +
(6.118)

C C
c be ce
CE BE BE CE
i i
i v v
V V V V

= +
(6.119)

1
B
BE CE
i
g
V V

For ,
C
npn i + is into the node and for, ,
C
npn i + out

12
B
BE CE
i
g
V V

For ,
C
npn i + is into the node and for, ,
C
npn i + out

21
B
CE BE
i
g
V V

Foris ,
C
npn i + into the node and for, ,
C
npn i + out

22
B
BE CE
i
g
V V

For, ,
C
npn i + is into the node and for, ,
C
npn i + out


11 12 b be ce
i g v g v = +
(6.120)

21 22 c be ce
i g v g v = +
(6.121)

B C
E
E
ce
v
be
v
11
g
22
g
12 ce
g v
21 be
g v
c
i
b
i
+

Bipolar junction transistor low frequency small signal equivalent circuit
Electronics of Semiconductor Devices 23
Hybrid-pi model

Hybrid = mixed origin or composition
Hybrid (a combination of conductance and resistance)
Pi = arrangement circuit
0
r = output resistance
r

= input resistance
m
g = transconductance
r
u
=feedthrough resistance

For active-mode biasing of pnp Bipolar junction transistor

1 1
CB EB
qV qV
kT kT
E ES R CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.122)

EB
qV
kT
E ES
I I e =
for
0, 0
EB CB
V V > <
(6.123)

1 1
CB EB
qV qV
kT kT
C F ES CS
I I e I e
| | | |
=
| |
|
\ . \ .
(6.124)

EB
qV
kT
C F ES
I I e =
for
0, 0
EB CB
V V > <
(6.125)

( ) ( ) 1 1 1 1
CB EB
qV qV
kT kT
B F ES R CS
I I e I e
| | | |
= +
| |
|
\ . \ .
(6.126)

( ) 1
EB
qV
kT
B E C F ES
I I I I e = =
(6.127)

( )
11
1
EB
qV
B B kT
F ES
EC EB
I qI q
g I e
V V kT kT

= = =
(6.128)

12
0
B
EB EC
I
g
V V

= =
(6.129)
24 THE COUPLED DIODE MODEL Chapter 6

21
EB
qV
C c kT
F ES
EC EB
I qI q
g I e
V V kT kT

= = =
(6.130)

22
0
C
EB EC
I
g
V V

= =
(6.131)

12 22
0 g g = =
(6.132)

21
C C
m
EC EB
I qI
g g
V V kT

= = =
(6.133)

11
1 1 1 1
C DC
B
B m m B
EC EB
I
r
qI
g I g g I
kT
V V

= = = = =

(6.134)

B C
E
E
ce
v
be
v
r
m be
g v
c
i
b
i
+

simplified low frequency hybrid equivalent circuit

21 12 m
g g g =
(6.135)

0
22 12
1
r
g g
=
+ (6.136)

11 12
1
r
g g

=
(6.137)

12
1
r
g
u

=
(6.138)
Electronics of Semiconductor Devices 25
B C
E
E
ce
v
be
v
r
m be
g v
+

0
r
u

Complete low frequency hybrid-
Pi
p
equivalent circut
B C
E
E
ce
v
be
v
r
m be
g v
c
i
b
i
+

0
r
r
u
e
r
b
r c
r
cb
C
eb
C
E
'
B C
High frequency equivalent circuit including the positive resistance