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Product specification
BU1508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 35 150 150 UNIT V V A A A A mA A W C C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.6 UNIT K/W K/W
1 Turn-off current.
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
Cisol
10
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.1 A IC = 4.5 A; IB = 1.7 A IC = 100 mA; VCE = 5 V IC = 4.5 A; VCE = 1 V
UNIT mA mA mA V V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) TYP. 80 MAX. UNIT pF s s
ts tf
5.0 0.4
6.0 0.6
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
ICsat
+ 50v 100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
ts IBend
- IBM
IC / mA
1mH
250 200
100
IBend
LB
BU1508AX 12nF
BY228
0 VCE / V
min VCEOsust
-VBB
TRANSISTOR IC DIODE
ICsat
100
h FE
5V
IB
IBend
10
t 20us 26us 64us VCE
Tj = 25 C Tj = 125 C
1V
1 0.01
t
0.1 IC / A
10
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
VBESAT / V
Tj = 25 C Tj = 125 C
10
VCESAT / V
Tj = 25 C Tj = 125 C
6A 4.5A
IC/IB= 3 4 5
1 3A IC=2A 0.1
0.1
1 IC / A
10
0.1
1 IB / A
10
1000
IC = 4.5A 3.5A
100
Tj = 25 C Tj = 125 C
10
0.1 1 IC / A 10
0.1
1 IB / A
10
Tj = 125 C
IC= 6A 4.5A 3A 2A
12 11 10 9 8 7 6 5 4 3 2 1 0 4
2 IB / A
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
PD%
100
IC / A
= 0.01
tp =
10 us
Ptot max
0 20 40 60 80 Ths / C 100 120 140
100 us
1 ms
0.1
10 ms
DC
0.01 1E-06
Fig.15. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
1E-04
1E-02 t/s
1E+00
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
5.08
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 1.100
Philips Semiconductors
Product specification
BU1508AX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
September 1997
Rev 1.100