VISHAY

CG3/DG3
Vishay Semiconductors

Standard Sinterglass Diode

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Features
Specially designed for clamping circuits, horizontal deflection systems and damper applications High temperature metallurgically bonded construction Cavity-free glass passivated junction 3.0 ampere operation at Tamb = 50 C with no thermal runaway Hermetically sealed package

17132

Mechanical Data
Case: Sintered glass case, G3 Terminals: Solder plated axial leads, solderable per MILSTD- 750, Method 2026

Polarity: Color band denotes cathode end Mounting Position: Any Weight: 1100 mg

Parts Table
Part CG3 DG3 VRRM = 1400 V VRRM = 1500 V Type differentiation G3 G3 Package

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Maximum full load reverse current full cycle average Operating junction and storage temperature range 0.375 " (9.5 mm) lead length at Tamb = 50 C 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) Tamb = 50 C 0.375 " (9.5 mm) lead length at Tamb =100 C Part CG3 DG3 Symbol VR = VRRM VR = VRRM IF(AV) IFSM IR(AV) TJ, TSTG Value 1400 1500 3.0 100 200 - 55 to + 175 Unit V V A A A C

Maximum Thermal Resistance

Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance 1)
1)

Symbol RJA

Value 20

Unit K/W

Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with leads attached to head to heat sinks

Document Number 86083 Rev. 2, 28-Jan-03

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CG3/DG3
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum reverse current Maximum reverse recovery time IF = 3.0 A VR = VRRM, Tamb = 25 C VR = VRRM, Tamb = 100 C IF = 0.5 A, IR = 50 mA IF = 0.5 A, IR = 50 mA IF = 0.5 A, IR = 1.0 A, Ir = 0.25 A IF = 0.5 A, IR = 1.0 A, Ir = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz CG3 DG3 CG3 DG3 Test condition Part Symbol VF IR IR trr trr trr trr CJ 1.0 1.0 40 Typ.

VISHAY

Max 1.2 5.0 100 15 20 2.0 2.0

Unit V A A s s s s pF

Typical Characteristics (Tamb = 25 C unless otherwise specified)

4.0 30

Average Forward Rectified Current (A)

Instantaneous Forward Current (A)

60 HZ Resistive or Inductive Load 3.0

10

1 TJ = 25C Pulse Width = 300s 1% Duty Cycle 0.1

2.0

1.0

0.375" (9.5mm) Lead Length 0 0 25 50 75 100 125 150 175 0.01 0.2
gcg3_03

0.4

0.6

0.8

1.0

1.2

1.4

1.6

gcg3_01

Ambient Temperature (C)

Instantaneous Forward Voltage (V)

Figure 1. Forward Current Derating Curve

Figure 3. Typical Instantaneous Forward Characteristics

200

10

Instantaneous Reverse Current (A)

Peak Forward Surge Current (A)

TA = 50C 8.3ms Single Half Sine-Wave (JEDEC Method) 100

TJ = 100C

1.0

0.1

TJ = 25C

10 1
gcg3_02

10

100
gcg3_04

0.01 0

20

40

60

80

100

Number of Cycles at 60 HZ

Percent of Rated Peak Reverse Voltage (%)

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Figure 4. Typical Reverse Characteristics

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Document Number 86083 Rev. 2, 28-Jan-03

VISHAY

CG3/DG3
Vishay Semiconductors

100 TJ = 25C f = 1.0MHZ Vsig = 50mVp-p

Junction Capacitance (pF)

10 1
gcg3_05

10

100

Reverse Voltage (V)

Figure 5. Typical Junction Capacitance

Package Dimensions in Inches (mm)

1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA.

0.300 (7.6) MAX.

0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN

17169

Document Number 86083 Rev. 2, 28-Jan-03

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CG3/DG3
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 86083 Rev. 2, 28-Jan-03

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