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Salim Aoulmit, Lakhdar Dehimi, Achour Saadoune (LMSM Laboratory Biskra U) Craig Buttar, Dima Maneuski (Glasgow U) Chris Bowdery, Michal Koziel,Andr Sopczak (Lancaster U)
L.Dehimi 6-7-2007 1
Outline
Improvement of Analytical Model and comparison with Full Simulation. Confirmation of trap concentration effect. Studying the effect of occupancy.
L.Dehimi 6-7-2007
Introduction
Recall last meeting: ongoing comparison between Analytical Model and 2-phase CP-CCD Full Simulation. New cross checks with Dimas Full Simulations. Now: improved AM with respect to full simulation * tjoin depending on the trap level. * time spent under each node is different. Effect of occupancy on CTI value is introduced by correlation of waiting time and clock frequency.
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L.Dehimi 6-7-2007
L.Dehimi 6-7-2007
Improved AM
Improved model is done in two steps: 1) Charge from deep level need more time to join their parent packet, so we suppose: * For 0.17 eV tjoin=tsh. * For 0.44 eV tjoin=2*tsh.
2) CTI=CTI(1)+CTI(2), because the shift time is not the same.
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2.5
x 10
-3
AM-ImpAM 0.17eV
Improved AM AM
120
140
200
220
240
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1.4
x 10
-3
AM-ImpAM 0.44
Analytical Model tjoin=tsh Analytical Model tjoin=2tsh Improved Analytical Model (including different shift times)
250
300
450
500
550
8
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ImpAM-Glasg-Lancs 0.44 eV
L.Dehimi 6-7-2007
10
T=160K T=185K
CTI
10
-4
10
-5
50 M Hz 0 .1 7 e V O ccupancy 1%
10
10
3 N T (cm )
10
11
10
12
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11
Occupancy Study
Simultaneous change of occupancy occ and waiting time tw. At very high temperatures, the emission time is very short, and independent of the occupancy traps are empty when the next charge package arrives.
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12
Improved AM Occ=0.1% Improved AM Occ=1% Full Sim Glasgow Occ=0.1% Full Sim Glasgow Occ=1%
CTI
1.5
0.5
0 100
120
140
200
220
240
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13
Improved AM Occ=0.1% Improved AM Occ=1% Full Sim Glasgow Occ=0.1% Full Sim Glasgow Occ=1%
120
140
200
220
240
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14
Improved AM Occ=0.1% Improved AM Occ=1% Full Sim Glasgow Occ=0.1% Full Sim Glasgow Occ=1%
250
300
450
500
550
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Improved AM Occ=0.1% Improved AM Occ=1% Full Sim Glasgow Occ=0.1% Full Sim Glasgow Occ=1%
250
300
450
500
550
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Improved AM Occ=0.1% Improved AM Occ=1% Full Sim Glasgow Occ=0.1% Full Sim Glasgow Occ=1%
250
300
400
450
500
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17
100 0.01
0.1
Occupency (% )
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x 10
10MHz 0.44 eV
0 200
250
300
450
500
550
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0.17 eV 0.44 eV
-4
-4
-4
-5
-5
-5
-5
0.0 0 10 20 30 40 50
Frequency (MHz)
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Conclusions/Outlook
0.17eV traps: Glasgow, Lancaster and Analytic Simulations agree well. For low temperature region only analytical model predicts CTI values. 0.44eV traps, analytical model agree better with Lancaster full simulation. Improvement to analytical model: tjoin for 0.44eV is larger than the one used for 0.17eV and CTI is considered at different times in both node. Improved AM agree better with Full Simulations. Linearity of CTI with trap concentration Linearity is confirmed with factor 1. As the frequency decrease the change in the CTI Amplitude is more visible Occupancy effect study: impAM is more consistent with Konstantins thesis plot (increased CTI amplitudes). Still larger effect in Konstantins plot. This is may due to clocking form. Further comparisons with full simulation needed with rectangular/square clocking voltage.
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