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Detection of AM waves
Square-law detector Envelope detector
Generation of AM waves
Square-law modulator
requires three features
Means for summing carrier-wave and modulating wave A non-linear element A band-pass filter for extracting the desired modulation products
Semiconductor diodes or transistors are used as non-linear elements Filtering is usually performed by a single or double-tuned filter
Square-law modulator
Non-linear device
Square-law modulator
Amplitude of the modulating signal is less than the amplitude of the carrier % modulation is less than 100 The transfer characteristic of a diode-load resistor combination is computed Unwanted frequency components are filtered by the tuned filter.
v2 (t ) = a1v1 (t ) + a2v12 (t ) v1 (t ) = Ac cos2f ct + m(t ) v2 (t ) = a1 ( Ac cos2f ct + m(t )) + a2 ( Ac cos2f ct + m(t ))2 = a1 Ac cos2f ct + a1m(t ) + a2 Ac 2 cos2 2f ct + m2 (t ) + 2 Ac cos2f ctm(t )
Switching modulator
c(t)
m(t) v1(t)
RL v2(t)
Switching modulator
Carrier has larger magnitude than the modulating signal Modulating signal is weaker Less than 100% modulation Diode acts as an ideal switch That is, zero impedance during forward-bias and infinite impedance during reverse bias
Switching modulator
Load voltage v2(t) varies periodically between v1(t) and zero at a rate equal to fc gp(t) is a periodic pulse train with duty cycle equal to one-half and period = 1/fc Fourier series of gp(t) is computed. Output voltage will v1(t)*gp(t)
Switching modulator
1 2 g p (t ) = + cos2f ct + odd harmonics 2 v2 (t ) = [Ac cos2f ct + m(t )]g p (t ) 1 2 v2 (t ) = [Ac cos2f ct + m(t )] + cos 2f ct 2 Ac 2 m(t ) 2 2 = cos 2f ct + Ac cos 2f ct + + m(t ) cos2f ct 2 2 Ac 4 m(t ) cos 2f ct = 1 + 2 Ac
Detection of AM waves
square-law detector
v2 (t ) = a1v1 (t ) + a 2 v1 (t )
2
v1 (t ) = Ac [1 + km(t )]cos 2f c t v2 (t ) = a1 [Ac [1 + km(t )]cos 2f c t ] + a 2 [Ac [1 + km(t )]cos 2f c t ]2 = a1 Ac cos 2f c t + a1km(t ) Ac cos 2f c t Ac 2 cos 2 2f c t 2 2 2 2 + a 2 + Ac k m (t ) cos 2f c t 2 2 + 2 Ac k cos 2f c tm(t )
Square-law detector
v2 (t ) = a1 Ac cos 2f c t + a1km(t ) Ac cos 2f c t Ac 2 cos2 2f c t 2 2 2 2 + a2 + Ac k m (t ) cos 2f c t 2 2 + 2 Ac k cos 2f c tm(t ) 2 Ac 2 2 (1 + cos 4f ct )a2 1 + k m (t ) + 2km(t ) = 2
Envelope detector
Carrier frequency is greater than the modulating frequency Carrier magnitude is greater than the modulating voltage Modulation index is less than one That is % modulation is less than 100 The circuit is combination of a diode and RC-filter
Envelope detector
C RL
vam(t)
Envelope detector
positive half cycle Diode is forward biased Capacitor charges up rapidly to the peak value of the input signal When the input signal falls below a certain vale diode is reverse biased Capacitor discharges slowly through the load resistor Discharging process continues slowly until the next positive half cycle Again when the input is greater than the voltage across the capacitor C , diode starts conducting
Envelope detector
Diode is ideal Zero impedance forward biased Infinite impedance reverse biased Charging time is short compared to the carrier period = 1/fc Capacitor charges rapidly and follows the input voltage