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SEMICONDUCTOR TECHNICAL DATA

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Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form Case 369A Miniature Plastic Package Straight Leads Case 369
G ORDERING INFORMATION To Obtain DPAK in Surface Mount Leadform (Case 369A) Shipped in Sleeves No Suffix, i.e. MCR12DCN Shipped in 16 mm Tape and Reel Add T4 Suffix to Device Number, i.e. MCR12DCNT4 To Obtain DPAK in Straight Lead Version (Case 369) Shipped in Sleeves Add 1 Suffix to Device Number, i.e. MCR12DCN1 A

MCR12DCM MCR12DCN
Motorola Preferred Devices

Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. SCRs 12 AMPERES RMS 600 thru 800 VOLTS

A K K A G

CASE 369A13 STYLE 4

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating Peak Repetitive OffState Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 125C) OnState RMS Current (All Conduction Angles; TC = 90C) Average OnState Current (All Conduction Angles; TC = 90C) Peak NonRepetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 90C) Average Gate Power (t = 8.3 msec, TC = 90C) Peak Gate Current (Pulse Width 10 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM MCR12DCM MCR12DCN IT(RMS) 12 IT(AV) ITSM 100 I2t PGM 5.0 PG(AV) 0.5 IGM TJ Tstg 2.0 40 to 125 40 to 150 Amps C 41 A2sec Watts 7.6 600 800 Amps Value Unit Volts

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) Symbol RqJC RqJA RqJA Max 2.2 88 80 Unit C/W

TL 260 C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data Motorola, Inc. 1997

MCR12DCM MCR12DCN
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristics Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Peak OnState Voltage (1) (ITM = 24 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = 40C) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = 40C) (VD = 12 V, RL = 100 W, TJ = 125C) Holding Current (VD = 12 V, IT = 200 mA, TJ = 25C) (VD = 12 V, IT = 200 mA, TJ = 40C) Latching Current (VD = 12 V, IG = 20 mA, TJ = 25C) (VD = 12 V, IG = 40 mA, TJ = 40C) Symbol IDRM IRRM TJ = 25C TJ = 125C VTM IGT 2.0 VGT 0.5 0.2 IH 4.0 IL 4.0 22 40 80 22 40 80 mA 0.65 1.0 2.0 mA 7.0 20 40 Volts 1.4 2.1 mA 0.01 5.0 Volts Min Typ Max Unit mA

DYNAMIC CHARACTERISTICS
Characteristics Critical Rate of Rise of OffState Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) (1) Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%. Symbol dv/dt 50 200 Min Typ Max Unit V/ms

Motorola Thyristor Device Data

MCR12DCM MCR12DCN
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 120 115 110 105 100 95 90 85 0 1.0 16 14 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(AV), AVERAGE ONSTATE CURRENT (AMPS) 120 180

90 60 dc

a = Conduction
Angle

dc

a = 30

a = Conduction
Angle

a = 30
2.0 3.0

60 4.0

90 5.0

120 6.0

180 7.0 8.0

IT(AV), AVERAGE ONSTATE CURRENT (AMPS)

Figure 1. Average Current Derating

Figure 2. OnState Power Dissipation

I T, INSTANTANEOUS ONSTATE CURRENT (AMPS)

100 TYPICAL @ TJ = 25C MAXIMUM @ TJ = 125C 10 r(t) , TRANSIENT RESISTANCE (NORMALIZED)

1.0

0.1 ZqJC(t) = RqJC(t)Sr(t)

MAXIMUM @ TJ = 25C 1.0

0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms)

Figure 3. OnState Characteristics

Figure 4. Transient Thermal Response

100 VGT, GATE TRIGGER VOLTAGE (VOLTS) 20 35 50 65 80 95 110 125 I GT, GATE TRIGGER CURRENT (mA)

0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 5.0 40 25 10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)

10

1.0 40 25 10

Figure 5. Typical Gate Trigger Current versus Junction Temperature

Figure 6. Typical Gate Trigger Voltage versus Junction Temperature

Motorola Thyristor Device Data

MCR12DCM MCR12DCN
100 100

IH , HOLDING CURRENT (mA)

10

IL, LATCHING CURRENT (mA) 5.0 20 35 50 65 80 95 110 125

10

1.0 40 25 10

1.0 40 25 10

5.0

20

35

50

65

80

95

110

125

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 7. Typical Holding Current versus Junction Temperature

Figure 8. Typical Latching Current versus Junction Temperature

1000 VD = 800 V TJ = 125C STATIC dv/dt (V/ ms) 100 10 100 1000 10 K RGK, GATECATHODE RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus GateCathode Resistance

Motorola Thyristor Device Data

MCR12DCM MCR12DCN
PACKAGE DIMENSIONS

T B V R
4

SEATING PLANE

C E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 0.030 0.050 0.138 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 0.77 1.27 3.51

S
1 2 3

A K F L D G
2 PL

Z U

J H 0.13 (0.005) T

DIM A B C D E F G H J K L R S U V Z

STYLE 4: PIN 1. 2. 3. 4.

CATHODE ANODE GATE ANODE

CASE 369A13 ISSUE Y

Motorola Thyristor Device Data

MCR12DCM MCR12DCN

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Motorola Thyristor MCR12DCM/D Device Data