JFET:

Se escogen VDD = 10[V], RG = 1.5 [MΩ], IDSS = 6.5 [mA], VGSOFF = 2.5 [V], VDSQ = 8[V],
IDSQ = 5 [mA], VGSQ = 0.4 [V].
Tenemos las siguientes expresiones:
V DD−V DSQ
R D=
1.1 I DQ
10−8
R D= =363.6363 [ Ω ]
1.1 ( 5× 10 )
−3

R D=360 [ k Ω ]
R s=0.1 R D

R s=36[Ω]

V G =V GSQ + Rs I DQ

V G =0.4+100 ( 5 ×10−3 )=0.9 [ V ]

V DD
R1= R
VG G
10
R1= ( 1.5 × 106 )=16.66 [ M Ω ]
1.5
 R1 R G
R2=
R1−R G

( 10)(1.5)
R2= =1.6 [ M Ω ]
10−1.5

Datos simulados:
MOSFET:

Se escogen VDD = 10[V], R2 = 1[MΩ], VDSQ = 4.5[V], IDSQ = 6[mA], VGSQ = 2.5[V].
Tenemos las siguientes expresiones:
V DD 10
V s= = =1 [ V ]
10 10

Vs 1
R s= = =166.66 [ Ω ]
I D 6 × 10−3

V RD=V DD−V DS−V s → V RD=10−4.5−1=4.5 [ V ]

VD 4.5
R D= = =750 [ Ω ]
I D 6 ×10−3

V G =V GS +V S → V G=2.5+ 1=3.5 [ V ]

Tenemos que:
R2=1 [ M Ω ]

R1=
( V DD
VG ) (
−1 ( R2 )=
10
3.5 )
−1 ( 1 ×10 ) =1.8577 [ Ω ]
6
Datos simulados: