Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Schubert
Chapter21page1
BJT Ebers-Moll-model
- Ebers-Moll Model
(Developed by Ebers and Moll in 1954)
Also called the Coupled Diode Model
Two diodes: The EB and CB diode
o Charge distribution in the Base:
ECSE2210,MicroelectronicsTechnology,Prof.E.F.Schubert
Chapter21page2
o Under Normal operation (Subscript N), it is Ap
C
= 0
Using Ap
C
= 0 and the results of the last chapter, we have:
E EN
p a I A =
E CN
p b I A = (1)
o Under Inverted operation (Subscript I), it is 0
E
= Ap
Using Ap
E
= 0 and the results of the last chapter, we have:
C EI
p b I A =
C CI
p a I A = (2)
o In Eqs. (1) and (2), it is
p
B
p
p
coth
L
W
L
D
A e a = (3)
p
B
p
p
cosech
L
W
L
D
A e b = (4)
o Superposition of the two currents:
EI EN E
I I I + = (5)
C E
p b p a A A = (6)
) 1 e ( ) 1 e (
/
n0
/
n0
CB EB
=
kT eV kT eV
p b p a
(7)
CI CN C
I I I + = (8)
C E
p a p b A A = (9)
) 1 e ( ) 1 e (
/
n0
/
n0
EB
=
kT eV kT eV
CB
p a p b (10)
The superposition of normal operation currents and inverted operation currents
yields two equations (Eqs. 7 and 10) valid for any operating condition.
ECSE2210,MicroelectronicsTechnology,Prof.E.F.Schubert
Chapter21page3
o The four currents I
EN
, I
EI
, I
CN
, and I
CI
can also be written in the following way:
Normal operation (V
BE
= forward V
CB
= reverse)
) 1 e (
/
ES EN
EB
=
kT eV
I I (11)
) 1 e (
/
ES N EN N CN
EB
o = o =
kT eV
I I I (12)
N
o current amplification in normal operation
Inverted operation (V
EB
= reverse V
CB
= forward)
) 1 e (
/
CS CI
CB
=
kT eV
I I (13)
) 1 e (
/
CS I CI I EI
CB
o = o =
kT eV
I I I (14)
I
o current amplification in inverted operation
( ) ( ) 1 e 1 e
/
CS
/
ES N CI CN C
CB EB
o = + =
kT eV kT eV
I I I I I (16)
- Ebers-Moll equivalent circuit is the bridge between internal device physics and electronic
circuits.
ECSE2210,MicroelectronicsTechnology,Prof.E.F.Schubert
Chapter21page5
- Ebers-Moll output characteristic: