CXA1685M

High-Speed Transimpedance Amplifier

Description
CXA1685M is a low noise transimpedance 8 pin SOP (Plastic)
amplifier, particularly suitable for fiber-optic system.
CXA1685M is fabricated using high-speed bipolar
process.

Features
• High transimpedance: Q 11.2kΩ (Typ.)
Q 10.8kΩ (Typ.)
• Wide band width (–3dB): Q 177MHz (Typ.)
Absolute Maximum Ratings
Q 157MHz (Typ.)
• Supply voltage VCC – VEE –0.3 to +7.0 V
• Maximum input current: 1mA
• Minimum input voltage VIN VEE V
• Low noise: 1.7pA/√ Hz (Typ.)
• Input current IIN –1 to +1 mA
• Output current
Applications
(Q/Q) (Continuous) IO 0 to 50 mA
• SONET/SDH: 155Mb/s
(Surge) 0 to 100 mA
• Fiber channel: 133Mb/s
• Storage temperature Tstg –65 to +150 °C
• FDDI: 125Mb/s

Recommended Operating Conditions

• DC power supply voltage
VCC – VEE 4.75 to 5.46 V
• Operating ambient temperature
Ta 0 to +85 °C

Structure
Bipolar silicon monolithic IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E94X22A8Y
 CXA1685M

Block Diagram and Pin Assignment

VCC 5 ZT 4 VCCA

IN 6 3 Q

C 7 2 Q

VEES 8 1 VEEDA

Electrical Characteristics

• DC Electrical Characteristics (VCC = VCCA = GND, VEES = VEEDA = –5.46 to –4.75V, Ta = 0 to +85°C)

Item Symbol Test Condition Min. Typ. Max. Unit

Supply current IEE input pin left open –15.3 –10.0 mA
Q ZTQ 6.6 11.2 14.8
Transimpedance kΩ
Q ZTQ 6.2 10.8 14.3
Max. Input Current before clipping IIN Ta = 25°C +40
µA
Max. Input Current IIN2 +1000
IN VIN VEE + 2.5
Q VQ VEE + 1.7
Bias votlage input pin left open V
Q VQ VCC – 2.4
C VC VEE + 1.7
Input capacitance CIN 1.3 pF

• AC Electrical Characteristics (VCC = VCCA = GND, VEES = VEEDA = –5.46 to –4.75V, Ta = 0 to +85°C)

Item Symbol Test Condition Min. Typ. Max. Unit.

Bandwidth Q f–3dBQ 113 177

∗1 MHZ
(–3dB) Q f–3dBQ 109 157
Input Current Noise Spectral
In fN = 1kHZ to 156MHZ 1.7 pA/√ HZ
Density (Mean value)
∗1 Assumes photodiode capacitance; CPD < 1.0pF, output load capacitance; Cout = 2.0pF,
output load resistor; Q: 620Ω to VEE, Q: 1.3kΩ to VEE

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 CXA1685M

Application Circuit

VCC

VCC VCCA
PD 5 ZT 4
0.1µF 0.1µF
IN Q
6 3 Q

C Q
7 2 Q

1.0µF
VEES VEEDA
8 1
620Ω 1.3kΩ

VEE

Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

Cautions for Handling

1. As the electronic breakdown level is weak, take care to handle.
2. The internal resistor of the output pin does not have the capability of drive (RL = 10kΩ). The terminal
resistors must be connected. The resistance value is shown in application circuit.

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 CXA1685M

Typical Performance

Typical frequency characteristics (VCC – VEE = 5.0V, Ta = 25°C)

Q Output 5dB/div f–3dB = 177MHz Q Output 5dB/div f–3dB = 157MHz

0 500M 1.0G 0 500M 1.0G

Typical Output Wave forms (VCC – VEE = 5.0V, Ta = 25°C)

20mV/div VIN = –36dBm, fIN = 80MHz

65.9000ns 90.9000ns 115.900ns

Duty Cycle Distortion vs Input Current

Q Output fIN = 155Mbps Q Output fIN = 155Mbps
55 55

50 50
Q Output DCD [%]

Q Output DCD [%]

45 45

40 40

35 35

30 30
0 200 400 600 800 1000 0 200 400 600 800 1000
IIN [µA] IIN [µA]

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 CXA1685M

f–3dBQ vs VEE f–3dBQ vs Ta

200 200

190 190

180 180

f–3dB [MHz]
f–3dB [MHz]

170 170

160 160

Ta = –40°C VCC – VEE = 4.7V

150 Ta = 25°C 150 VCC – VEE = 5.0V
Ta = 85°C VCC – VEE = 5.5V
140 140
–5.6 –5.4 –5.2 –5.0 –4.8 –4.6 –50 –25 0 25 50 75 100

VEE [V] Ta [°C]

f–3dBQ vs VCC–VEE f–3dBQ vs Ta

200 200
© Ta = –40°C VCC – VEE = 4.7V
190 Ta = 25°C 190 VCC – VEE = 5.0V
Ta = 85°C VCC – VEE = 5.5V

180 180
f–3dB [MHz]
f–3dB [MHz]

170 170

160 160

150 150

140 140
–5.6 –5.4 –5.2 –5.0 –4.8 –4.6 –50 –25 0 25 50 75 100

VEE [V] Ta [°C]

VQ vs IIN VQ vs IIN
–1 –1
Ta = 85°C
–1.5 Ta = 25°C –1.5
Ta = –40°C
–2 –2

–2.5 –2.5
VQ [V]
VQ [V]

–3 –3

–3.5 –3.5
Ta = 85°C
–4 –4 Ta = 27°C
Ta = –40°C
–4.5 –4.5
0 50 100 150 200 0 50 100 150 200

IIN [µA] IIN [µA]

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 CXA1685M

IEE vs VEE Ta = 25°C IEE vs Ta VEE = –5.0V

–8.8 –8.8

–9 –9

–9.2 –9.2

IEE [mA]
IEE [mA]

–9.4 –9.4

–9.6 –9.6

–9.8 –9.8

–10 –10

–10.2 –10.2
–5.6 –5.4 –5.2 –5 –4.8 –4.6 –50 –25 0 25 50 75 100
VEE [V] Ta [°C]

VQ vs VEE Ta = 25°C VQ vs Ta VEE = –5.0V

–3 –3

–3.2 –3.2

–3.4 –3.4
VQ [V]
VQ [V]

–3.6 –3.6

–3.8 –3.8

–4 –4
–5.6 –5.4 –5.2 –5 –4.8 –4.6 –50 –25 0 25 50 75 100
VEE [V] Ta [°C]

VQ vs VEE Ta = 25°C VQ vs Ta VEE = –5.0V

–1.8 –1.8

–2 –2

–2.2 –2.2
VQ [V]
VQ [V]

–2.4 –2.4

–2.6 –2.6

–2.8 –2.8

–3 –3
–5.6 –5.4 –5.2 –5 –4.8 –4.6 –50 –25 0 25 50 75 100
VEE [V] Ta [°C]

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 CXA1685M

Test Circuit (Ta = 25°C, VEE = –5.0V)

Spectrum Analyzer/
Oscilloscope

VEE VEE

620 2p 50
0.1µ 51
Signal Generator
1µ 100
ATT
–40dB 0.1µ 51
51 2p
680p 1.3k 2p 50
VEE
VEE VEE
Tracking Generator VEE

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 CXA1685M

Package Outline Unit: mm

8PIN SOP (PLASTIC)

+ 0.4
1.25 – 0.15
+ 0.4
5.0 – 0.1
0.10
8 5
A

+ 0.3
4.4 – 0.1

6.4 ± 0.4
1 4

1.27

b
0.24 M
+ 0.15
0.1 – 0.1
B

0.5 ± 0.2
0° to 10°
+ 0.1
0.15 – 0.05

+ 0.03
0.15 – 0.01

b = 0.4 – 0.05 b = 0.4 ± 0.03

+ 0.1

DETAILA
(0.15)

(0.4)

DETAIL B : SOLDER DETAIL B : PALLADIUM

PACKAGE STRUCTURE
PACKAGE MATERIAL EPOXY RESIN

LEAD TREATMENT SOLDER/PALLADIUM

SONY CODE SOP-8P-L03 PLATING
EIAJ CODE SOP008-P-0225 LEAD MATERIAL 42/COPPER ALLOY

JEDEC CODE PACKAGE MASS 0.1g

NOTE : PALLADIUM PLATING

This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).

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