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Next: 7.3 Device Model for Up: 7. Organic Semiconductor Device Previous: 7.1 Introduction
Subsections
(7.1)
where is the electrostatic potential, and the is the carrier occupation far from the organic-insulator
interface.
(7.2)
where is the channel width, is the channel length, is the flat-band voltage, and is the
sheet conductance of the channel at V. The potential is defined as ,
where is the potential at the edge of the space-charge layer where there is no band bending.
(7.3)
The electrostatic potential in the space charge layer at the point ( ) in the channel is expressed as
, where the is the amount of the band bending in the channel. The
conductance for an element of channel length and the width can be written as
(7.4)
where is the thickness of the organic layer. Changing the variable of integration yields
(7.5)
we obtain
In order to solve (7.5) we need to get an expression for . By solving Poisson's equation in the
gradual channel approximation
(7.6)
(7.7)
(7.8)
(7.9)
(7.10)
(7.11)
where is the insulator capacitance per unit area. From the equations above, an expression for
is obtained
(7.12)
(7.13)
In order to reduce computation time, an explicit yet accurate relation between surface potential and gate
voltage is preferable. In (7.13) we can get using a numerical approach. However, in the accumulation
mode, it holds , so that an approximate expression of surface potential can be obtained
as
(7.14)
A comparison between numerical calculation and approximate calculation is shown in Fig 7.3 and Fig
7.4. As can be seen, the agreement is very satisfactory. Parameters are from [132,133].
With the simplified surface potential and (7.8) we can get the simplified sheet conductance as
(7.15)
Figure 7.4: Sheet conductance from numerical calculation (symbols) and the
approximation.
(7.16)
(7.17)
in saturation ( ).
, , .
In Fig 7.5 and Fig 7.6 the transfer characteristics of a pentacene OTFT are given for at
different drain voltage and different temperature. Both figures show a good agreement between the
analytical model and experimental data. Here we also model the transfer characteristics of a PTV OTFT,
where some parameters are different from those for pentacence: K, S/m, ,
as shown in Fig 7.7. The modeled output characteristics of the pentacene OTFT is shown in Fig 7.8.
Next: 7.3 Device Model for Up: 7. Organic Semiconductor Device Previous: 7.1 Introduction