Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
KIT
ATION
EVALU BL E
AVAILA
MAX2620
The MAX2620 combines a low-noise oscillator with two ♦ Low-Phase-Noise Oscillator: -110dBc/Hz
output buffers in a low-cost, plastic surface-mount, (25kHz offset from carrier) Attainable
ultra-small µMAX package. This device integrates func-
tions typically achieved with discrete components. The ♦ Operates from Single +2.7V to +5.25V Supply
oscillator exhibits low-phase noise when properly ♦ Low-Cost Silicon Bipolar Design
mated with an external varactor-tuned resonant tank
♦ Two Output Buffers Provide Load Isolation
circuit. Two buffered outputs are provided for driving
mixers or prescalers. The buffers provide load isolation ♦ Insensitive to Supply Variations
to the oscillator and prevent frequency pulling due to ♦ Low, 27mW Power Consumption (VCC = 3.0V)
load-impedance changes. Power consumption is typi-
cally just 27mW in operating mode (VCC = 3.0V), and ♦ Low-Current Shutdown Mode: 0.1µA (typ)
drops to less than 0.3µW in standby mode. The MAX2620
operates from a single +2.7V to +5.25V supply.
________________________Applications _______________Ordering Information
Analog Cellular Phones PART TEMP RANGE PIN-PACKAGE
Digital Cellular Phones MAX2620EUA -40°C to +85°C 8 µMAX
900MHz Cordless Phones MAX2620E/D -40°C to +85°C Dice*
900MHz ISM-Band Applications *Dice are tested at TA = +25°C, DC parameters only.
VCC VCC
10Ω
1000pF
10nH
1000pF 1.5pF
1 VCC1 OUT 8
C17 C5 OUT TO MIXER
MAX2620
1.5pF 1.5pF VCC
VTUNE 2 TANK VCC2 7
C3
1kΩ 0.1µF
2.7pF 3 FDBK 6
CERAMIC GND
C6
D1 RESONATOR C4 1000pF
L1 4 SHDN BIAS OUT 5
ALPHA 1pF OUT TO SYNTHESIZER
SMV1204-34 SUPPLY
51Ω
SHDN VCC
1000pF
DC ELECTRICAL CHARACTERISTICS
(VCC1, VCC2 = +2.7V to +5.25V, FDBK = open, TANK = open, OUT and OUT connected to VCC through 50Ω, SHDN = 2V,
TA = -40°C to +85°C, unless otherwise noted. Typical values measured at VCC1 = VCC2 = 3.0V, TA = +25°C.) (Note 1)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Supply Current 9.0 12.5 mA
Shutdown Current SHDN = 0.6V 0.1 2 µA
Shutdown Input Voltage High 2.0 V
Shutdown Input Voltage Low 0.6 V
Shutdown Bias Current High SHDN = 2.0V 5.5 20 µA
Shutdown Bias Current Low SHDN = 0.6V 0.5 µA
Note 1: Specifications are production tested and guaranteed at TA = +25°C and TA = +85°C. Specifications are guaranteed by
design and characterization at TA = -40°C.
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V CC = +3.0V, SHDN = V CC , Z LOAD = Z SOURCE = 50Ω, P IN = -20dBm (50Ω), f TEST = 900MHz,
TA = +25°C, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Frequency Range TA = -40°C to +85°C (Note 2) 10 1050 MHz
Reverse Isolation OUT or OUT to TANK; OUT, OUT driven at P = -20dBm 50 dB
Output Isolation OUT to OUT 33 dB
Note 2: Guaranteed by design and characterization at 10MHz, 650MHz, 900MHz, and 1050MHz. Over this frequency range, the
magnitude of the negative real impedance measured at TANK is greater than one-tenth the magnitude of the reactive
impedances at TANK. This implies proper oscillator start-up when using an external resonator tank circuit with Q > 10. C3
and C4 must be tuned for operation at the desired frequency.
2 _______________________________________________________________________________________
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Ceramic-
MAX2620
Resonator-Based Tank
(Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA = +25°C, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Tuning Range VTUNE = 0.5V to 3.0V ±13 MHz
SSB at ∆f = 25kHz -110
Phase Noise dBc/Hz
SSB at ∆f = 300kHz -132
At OUT (Note 2) -6 -2
At OUT, per test circuit of Figure 1; TA = -40°C to +85°C
Output Power (Single-Ended) -11 -8 dBm
(Note 3)
At OUT (Note 3) -16 -12.5
Noise Power fO ± >10MHz -147 dBm/Hz
Average Tuning Gain 11 MHz/V
Second-Harmonic Output -29 dBc
Load Pull VSWR = 1.75:1, all phases 163 kHzP-P
Supply Pushing VCC stepped from 3V to 4V 71 kHz/V
Note 3: Guaranteed by design and characterization.
_______________________________________________________________________________________ 3
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620
OUT OUTPUT POWER vs. FREQUENCY OUT OUTPUT POWER vs. FREQUENCY
OVER VCC AND TEMPERATURE OVER VCC AND TEMPERATURE
MAX2620-01 MAX2620-02
-5 -11.0
POWER (dBm)
-12.0
-7 TA = -40°C
VCC = 2.7V
-12.5
A B VCC = 2.7V
-8
VCC = 2.7V -13.0
-9 -13.5
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
FREQUENCY (MHz) FREQUENCY (MHz)
A: 10MHz BAND CIRCUIT
B: NOT CHARACTERIZED FOR THIS FREQUENCY BAND.
EXPECTED PERFORMANCE SHOWN.
C: 900MHz BAND CIRCUIT
4 _______________________________________________________________________________________
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620
_____________________________Typical Operating Characteristics (continued)
(Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA = +25°C, unless otherwise noted.)
MAX2620-03
0 VCC = 2.7V TO 5.25V MAX2620-04
C3, C4 REMOVED
-10
1050MHz
REVERSE ISOLATION (dB)
-20 21 + j78
-30 900MHz
-40 36 + j90
-50 650MHz
800MHz 84 + j142
-60 49 + j105
-70
-80
-90
50 250 450 650 850 1050
FREQUENCY (MHz) *SEE FIGURE 1
MAX2620-06
MAX2620-05
9.5
VCC = 5.25V
SUPPLY CURRENT (mA)
15MHz 9.0
28 + j79.8
VCC = 2.7V
8.5
10MHz
63.6 + j121.5
8.0
5MHz
262 + j261
7.5
7.0
-40 -20 0 20 40 60 80 100
C3 = C4 = 270pF TEMPERATURE (°C)
L3 = 10µH
C2 = C10 = C13 = 0.01µF
_______________________________________________________________________________________ 5
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620
OUTPUT SPECTRUM
PHASE NOISE vs. TEMPERATURE FUNDAMENTAL NORMALIZED TO 0dB SINGLE SIDEBAND PHASE NOISE
-104 0 -40
MAX2620-08
MAX2620-07
MAX2620-09
SSB @ ∆f = 25kHz
-10 -50
RELATIVE OUTPUT LEVEL (dBc) L1 = 5nH INDUCTOR
-106 -20 -60 C6 = 1.5pF
SSB PHASE NOISE (dBc/Hz)
_______________________________________________________________Pin Description
PIN NAME FUNCTION
Oscillator DC Supply Voltage. Decouple VCC1 with 1000pF capacitor to ground. Use a capacitor with low
series inductance (size 0805 or smaller). Further power-supply decoupling can be achieved by adding a
1 VCC1
10Ω resistor in series from VCC1 to the supply. Proper power-supply decoupling is critical to the low noise
and spurious performance of any oscillator.
2 TANK Oscillator Tank Circuit Connection. Refer to the Applications Information section.
Oscillator Feedback Circuit Connection. Connecting capacitors of the appropriate value between FDBK and
3 FDBK TANK and between FDBK and GND tunes the oscillator’s reflection gain (negative resistance) to peak at the
desired oscillation frequency. Refer to the Applications Information section.
Logic-Controlled Input. A low level turns off the entire circuitry such that the IC will draw only leakage current
4 SHDN
at its supply pins. This is a high-impedance input.
Open-Collector Output Buffer (complement). Requires external pull-up to the voltage supply. Pull-up can be
resistor, choke, or inductor (which is part of a matching network). The matching-circuit approach provides
5 OUT
the highest-power output and greatest efficiency. Refer to Table 1 and the Applications Information section.
OUT can be used with OUT in a differential output configuration.
6 GND Ground Connection. Provide a low-inductance connection to the circuit ground plane.
Output Buffer DC Supply Voltage. Decouple VCC2 with a 1000pF capacitor to ground. Use a capacitor with
7 VCC2
low series inductance (size 0805 or smaller).
Open-Collector Output Buffer. Requires external pull-up to the voltage supply. Pull-up can be resistor,
choke, or inductor (which is part of a matching network). The matching-circuit approach provides the high-
8 OUT
est-power output and greatest efficiency. Refer to Table 1 and the Applications Information section. OUT
can be used with OUT in a differential output configuration.
6 _______________________________________________________________________________________
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620
VCC
10Ω
VCC 1000pF
L3*
220nH
C13*
1000pF 1000pF OUT
1 VCC1 OUT 8
MAX2620 ZO = 50Ω
TEST PORT VCC
2 TANK VCC2 7
C3*
C2* 2.7pF 1000pF
3 FDBK GND 6 C10*
1000pF
C4* 1000pF OUT
VCC 1pF 4 SHDN BIAS OUT 5
ZO = 50Ω
SUPPLY
ON 51Ω
OFF
VCC
*AT 10MHz, CHANGE TO:
C3 = C4 = 270pF
10Ω 1000pF 1000pF L3 = 10µH
C2 = C10 = C13 = 0.01µF
_______________________________________________________________________________________ 7
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Keeping the resonant tank circuit’s real component less The negative resistance of the MAX2620 TANK pin can
MAX2620
than one-half the magnitude of the negative real com- be optimized at the desired oscillator frequency by
ponent ensures that oscillations will start. After start-up, proper selection of feedback capacitors C3 and C4.
the oscillator’s negative resistance decreases, primarily For example, the one-port characteristics of the device
due to gain compression, and reaches equilibrium with are given as a plot of 1/S11 in the Typical Operating
the real component (the circuit losses) in the resonant Characteristics. 1/S11 is used because it maps inside
tank circuit. Making the resonant tank circuit reactance the unit circle Smith chart when the device exhibits
tunable (e.g., through use of a varactor diode) allows negative resistance (reflection gain).
for tuneability of the oscillation frequency, as long as
the oscillator exhibits negative resistance over the
desired tuning range. See Figures 3 and 4.
VCC VCC
1000pF
10Ω
1000pF
10µH 27pF
0.01µF
VTUNE 1 8 OUT TO
VCC1 OUT
MIXER
C5 VCC
150pF MAX2620
2 7
1kΩ TANK VCC2
C17 C3
33pF 270pF 3 6 1000pF
C6 L1 FDBK GND
33pH 2.2µH
C4 0.01µF
270pF 4 5 OUT TO
SHDN OUT
D1 SYNTHESIZER
SHDN 51Ω
1000pF
8 _______________________________________________________________________________________
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Rn, the negative real impedance, is set by C3 and C4
MAX2620
VCC VCC and is approximately:
0.01µF
[Equation 2]
1 1
10Ω Rn = gm
(
2πf C3 + C03 ) (
2πf C4 + C04
)
0.01µF
10µH 27pF
where gm = 18mS.
Using the circuit model of Figure 5, the following exam-
0.01µF ple describes the design of an oscillator centered at
1 8
VCC1 OUT OUT 900MHz.
VCC
30pF
2 7 Choose: L1 = 5nH ±10%
TANK VCC2
Q = 140
0.01µF
120pF 3 MAX2620 6 Calculate: Rp = Q × 2π × f × L1
FDBK GND
0.01µF Using Equation 1, solve for varactor capacitance (CD1).
4
SHDN OUT
5 CD1 is the capacitance of the varactor when the volt-
120pF OUT
age applied to the varactor is approximately at half-
supply (the center of the varactor’s capacitance range).
51Ω Assume the following values:
0.01µF
SHDN CSTRAY = 2.7pF, C17 = 1.5pF, C6 = 1.5pF, C5 = 1.5pF,
C03 = 2.4pF, C04 = 2.4pF, C3 = 2.7pF, and C4 = 1pF
VCC The value of CSTRAY is based on approximate perfor-
X = STATEK AT-3004 10MHz mance of the MAX2620 EV kit. Values of C3 and C4 are
FUNDAMENTAL MODE CRYSTAL SURFACE MOUNT chosen to minimize Rn (Equation 2) while not loading
CLOAD = 20pF the resonant circuit with excessive capacitance. C03
and C04 are parasitic capacitors.
Figure 4. 10MHz Crystal Oscillator
The varactor’s capacitance range should allow for the
desired tuning range. Across the tuning frequency
Sample Calculation range, ensure that Rs < 1/2 Rn.
According to the electrical model shown in Figure 5, the
resonance frequency can be calculated as: The MAX2620’s oscillator is optimized for low-phase-
noise operation. Achieving lowest phase-noise charac-
[Equation 1] teristics requires the use of high-Q (quality factor)
components such as ceramic transmission-line type
1
fO =
C x CD1 C5 x Cn
2π L1 CSTRAY + 17 + C6 +
C 17 + C D1 C 5 + Cn
where Cn =
(C3 + C03 )(C4 + C04 )
C3 + C03 + C4 + C04
_______________________________________________________________________________________ 9
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620
RS + jXS
TEST PORT
MEASUREMENT
(FIGURE 1)
C5 MAX2620
C3 C03
C17 Rn
2.4pF
CSTRAY L1 Rp C6
CD1 C04
C4 2.4pF
10 ______________________________________________________________________________________
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Package Information
MAX2620
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
8LUMAXD.EPS
4X S
8 8
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A - 0.043 - 1.10
A1 0.002 0.006 0.05 0.15
A2 0.030 0.037 0.75 0.95
b 0.010 0.014 0.25 0.36
E H
ÿ 0.50±0.1 c 0.005 0.007 0.13 0.18
D 0.116 0.120 2.95 3.05
0.6±0.1 e 0.0256 BSC 0.65 BSC
E 0.116 0.120 2.95 3.05
H 0.188 0.198 4.78 5.03
L 0.016 0.026 0.41 0.66
1 1
0.6±0.1
α 0∞ 6∞ 0∞ 6∞
D BOTTOM VIEW S 0.0207 BSC 0.5250 BSC
TOP VIEW
A2 A1 A
c α
e L
b
PROPRIETARY INFORMATION
TITLE:
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11
© 2002 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
This datasheet has been download from:
www.datasheetcatalog.com