2011 1 Homework Solution #1 (Ch.1-Ch.

2)
1. Each corner atom in a cubic unit cell is shared with seven neighboring cells; thus each
unit cell contains 1/8 of a sphere at each of the eight corners for a total of one atom.
Similarly, the fcc cell contains half an atom at each of the six faces for a total of three.
Thus we have
Atoms per cell = 1 (corners) + 3 (faces) = 4
1
Nearest neighbor distance = (a 2)
2

Radius of each sphere =

1
4

a 2 
 a 2
3
1
 
3
4
Volume of each sphere =   4 a 2  
3 24

Maximum fraction of cell filled

no. of spheres  vol. of each sphere

total vol. of each cell



4   a 3 2 24 
3
a
 2
  74 percent filled
6
Therefore, if the atoms in an fcc lattice are packed as densely as possible, with no distance
between the outer edges of nearest neighbors, 74 percent of the volume is filled. This is a
relatively high percentage compared with some other lattice structures.
2. For Si: a=5.43 10-8 cm, 8 atoms/cell,
8 8
 8 3
 5 1022atoms/cm3
a 3
(5.43 10 )
5 1022 (atoms / cm 3 )  28.1( g / mole )
density =  2.33 g / cm 3
6.02 10 (atoms / mole )
23

For GaAs : a=5.65 10-8 cm, 4 each Ga, As atoms/cell

4 4
  2.22  1022atoms/cm3
 5.65 10 
3  3
a 8

2.22 1022  69.7  74.9 

density   5.33 g / cm 3
6.02 1023
3. (a) 3a : 3b: 3c 1/3a : 1/3b : 1/3c (bc ac ab) = [1 1 1]
3a : 2b: 2c 1/3a : 1/2b : 1/2c (2bc 3ac 3ab) = [2 3 3]

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 111   111  1 11  11 1    1 11   11 1   1 1 1    1 1 1 
100   100   010  0 10   001  00 1 
(b)
110   110  1 10   1 10   011   0 11   01 1    0 1 1 
 101   101  10 1    10 1 
4. The electron momentum is p = mv = ħk. Then
1 1 p2 2 2
E  mv 2   k
2 2 m 2m
Thus the electron energy is parabolic with wave vector k. The electron mass is inversely
related to the curvature (second derivative) of the (E, k) relationship, since
d 2 E 2

dk 2 m
Although electrons in solids are not free, most energy bands are close to parabolic at their
minima (for conduction bands) or maxima (for valence bands). We can also approximate
effective mass near those band extrema from the curvature of the band.
mq 4
5. From equation E  we have
2 K 2 2
0.067  9.111031 1.6 1019 
4
mn q 4
E 
8   0 r  h2 8  8.85 1012 13.2   6.63 1034 
2 2 2

 8.34 1022 J  0.0052 eV

Thus the energy required to excite the donor electron from the n = 1 state to the free state
(n = ) is  5.2 meV. This corresponds to the energy difference Ec-Ed in Fig. 1 and is in
very close agreement with actual measured values.
6. For Si, ml  0.98m0 ; mt  0.19m0 from Appendix III.
There are six equivalent X valleys in the conduction band.
1/ 3
mn*  62 / 3 0.98  0.19   m0  1.1 m0
2
 
7. Since N d  ni , we can approximate n0  N d and
ni 2 2.25 1020
p0    2.25 103 cm 3
n0 1017
 EF  Ei  / kT
From equation n0  ni e , we have

n0 1017
EF  Ei  kT ln  0.0259ln  0.407 eV
ni 1.5 1010

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The resulting band diagram is :
Ec
EF
0.407eV
Ei

Ev

8. For Si, ml  0.98m0 ; mt  0.19m0 (Appendix III)

There are 6 equivalent X valleys in the conduction band.

1/ mn*  1/ 3(1/ m x  1/ m y  1/ m z )  1/ 3(1/ ml  2 / mt )

1 1 2 
1/ mn*    
3  0.98m0 0.19m0 
mn*  0.26m0

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