Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Koichi Sakuta
Research Center for Photovoltaics, AIST
Progress of PV R&D in Japan
Road Map
R&D Items PV2030
“New Sunshine” Project Completed 2004
2000
Thin Film Silicon Solar Cells (140 JPY/W)
3500
3000
Others
USA
Producton (MW)
2500
Europe
Japan
2000
1500
1000
500
0
93 94 95 96 97 98 99 00 01 02 03 04 05 06 07
Year (Source: PV News)
“PV2030” – Long-term Roadmap for PV R&D and Introduction
1GW 4.8GW 35GW 102GW
2002 2007 2010 2020 2030
~50 Yen/kW h
Grid-Connected <<System Tech>>>
with Higher Degree Less-dependent to Grid
Electricity Cost
Advanced Organic
Material
Amorphous Si
p p
i
μc-Si
p
μc-Si
Microcrystalline Si
i
a -Si i 1-xGe x
n
n
n
Small absorption coefficient in
infrared region
Microcrystalline Si1-xGex
AM1.5G
Higher IR response with
QE (a .u.)
a -S i
μc-S i
narrower Eg material
μc-S i1-xGe x
double η=12-13% → triple η= 16%
Wa ve le ngth (nm)
Thin Film Compound Semiconductor Team
CIGS Cell
18.1% Wide-gap Cell Flexible Cell
17.7%
Integrated Sub-module
C 6 H13 C 6 H13
S S
S S
n
C 6 H13 C 6 H13
-2
Current density / mA cm
Light
10 Dark
-10
ITO電極 有機層 金属電極 乾燥剤 封止ガラス
-1.0 -0.5 0.0 0.5 1.0
Voltage / V
ガラス基板
NIPPON GOHSEI
Processing
Films
Machines
Observer: Industrial Research Inst of Ishikawa, PV manufacturer
First Phase: 2006.6.1 - 2008.3.31
校正証明書
AIST
Long term reliability test of PV modules
Combined stresses
acceleration test
equipment
Characterization, Testing and System Team
Energy Rating of PV Systems Estimation of PV Introduction Potential
Base power + PV < Power Demand
1.1 90 PV
Daily Irradiation: Base power
1.0 OKE, Fine 2
80 power demand
7.6 [kWh/m ]
PV Module Temperature [ C]
0.9 70
PV Module Temp.*
o
0.8 o 60
43.7 [ C]
Irradiance [kW/m ]
2
0.7 50
0.6 40
0.5 30
0.4 20
0.3 10
0.2 0 Minimum power of coal
0.1 -10 power of geothermal
power of hydro
0.0 -20
power of nuclear
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0 3 6 9 12 15 18 21 24
Hour Time [hour]
Detection of failure by
Separation of problem
“Passive Diagnostic”
( PCS / PV Array )
(compare mes. vs calc.)
Industry
Industry Innovative materials/ Steel-making process with
manufacturing process hydrogen
Residence
Residence Efficient Efficient Fuel cells for
lighting
/Building houses/bldgs.
/Building residential use
Super Low energy IT
heat pumps devices/networks HEMS/BEMS/Regional EMS
Cross-
Cross-
sectoral Hydrogen production/
sectoral Power storage Power electronics storage/transport
Overview of NEDO’s PV R&D program
Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
Short term
Next Generation PV
Sys. (target at 2030)
Innovative PV Tech.
(target at 2020, 2030)
R&D on Innovative Solar Cells
(for 2050)
Connection
Grid-interconnection of clustered
Photovoltaic Power Generation
Grid
Scheme:
Three Core Research Centers were selected (July 2008).
1. RC for Adv. Sci. & Tech., The University of Tokyo
2. RC for Photovoltaics, AIST
3. Tokyo Institute of Technology
R&D on Innovative Solar Cells
(FY2008-2014)
Univ. Tokyo Group: Prof. Y. Nakano
“Post-silicon solar cells for ultra-high efficiencies ”
Multi Junction, High concentrator, III-V Compounds, Intermediate Band,
Quantum dots, New Concepts, New Materials
Target
Solar cells with efficiency over 40% and
Solar cells with cost below 7 yen/kWh
by 2050 with international collaboration.
Target
Over 25% efficiencies in 2015
for Si-based triple-junction and compound-semiconductor-based
four-junction thin-film solar cells
10% efficiencies in 2015
for single-junction solar cells using new concepts.
Usefulness of light-management technologies
will be shown by fabricating solar cells.
Smart stack structure
Mechanical stack Monolithic (lattice matching)
TCO Mechanically
Optically
Top cell Electrically
Intermediate bonded hν> 1.8 eV
substrate
bonding
middle cell
1.8 >hν> 1eV
bonding
bottom cell
1 >hν> 0.7 eV
Back contact
Materials Component cells Stacked cell
smart stack structure
22
Structure of project
① Si-based 3J cells
Wide and narrow-gap
materials
② CIS-based 4Jcells
Scenario for industrialization
Wafer base c-Si
Feedback to current technology
Wafer
This project base MJ
Thin film
base MJ
New comers
Before c-Si
1954 2003 2014 2030 2050