ASX601

250-2500 MHz MMIC Amplifier

Features Description
·16 dB Gain at 900 MHz The ASX601, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
·32.7 dBm P1dB @ 5 V & 850 mA
range of frequency, being suitable for use in both
·49 dBm Output IP3 receiver and transmitter of telecommunication sys-
·MTTF > 100 Years tems up to 2.5 GHz. The amplifier is available in an ASX601
·Single Supply SOT-89 packa ge and passes through the stringent
DC, RF, and reliability tests.
Package Style: SOT-89

Typical Performance*
Parameters Units Typical Typical Applications
Frequency MHz 900 2000 900 2000
·CDMA, GSM, W-CDMA, PCS
Gain dB 16 9.5 16 9.5
·Gain Block
S11 dB -18 -14 -18 -14
·CATV Amplifier
S22 dB -14 -12 -14 -12
1)
·IF Amplifier
Output IP3 dBm 49 47 44 43
·WiBro Amplifier
Noise Figure dB 5.6 5.8 5.6 5.8
·Bluetooth Amplifier
Output P1dB dBm 32.7 31 32 31
·Wireless LAN Amplifier
Supply Current mA 850 850 710 710
Supply Voltage V 5 5 4.7 4.7
* Performance tested at 50 Ω system and a room temperature.
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.

Product Specifications*
Parameters Units Min Typ Max More Information
Testing Frequency MHz 900
Tel: (82) 42-528-7223
Gain dB 15 16 Fax: (82) 42-528-7222
th
S11 dB -18 ASB Inc., 4 FI. Venture Town Bldg.,
367-17 Goijeong-Dong, Seo-Gu,
S22 dB -14
Daejon 302-716, Korea
Output IP3 dBm 47 49
Noise Figure dB 5.6 5.9
Output P1dB dBm 32 32.7
Supply Current mA 820 850 900
Supply Voltage V 5
* 100% in-house DC & RF testing is done on packaged products before taping.

Absolute Maximum Ratings

Parameters Rating
Operating Case Temperature -40 to +85°C
Storage Temperature -40 to +150°C
Supply Voltage +6 V
Operating Junction Temperature +150°C
Input RF Power (CW, 50ohm matched)* 25 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf

1/12 ASB Inc. • sales@asb.co.kr • Tel: +82-42-528-7223 December 2008

 ASX601
250-2500 MHz MMIC Amplifier

Frequency (MHz) 869~894

Magnitude S21 (dB) 16.5
APPLICATION CIRCUIT
Magnitude S11 (dB) -17
Magnitude S22 (dB) -18
CDMA Tx Output P1dB (dBm) 33
869 ~ 894 1)
Output IP3 (dBm) 48
Noise Figure (dB) 5.6
+5 V
Supply Voltage (V) 5
Current (mA) 850
1) OIP3 is measured with two tones at an output power of +14
dBm/tone separated by 1 MHz.

Board Layout (FR4, 40x40 mm2, 0.8T)

Schematic
Vcc=5 V

D1=5.6V
Zener Diode

C6=1 µF

C5=100pF

L1=100 nH
(Coil Inductor)
C1=100 pF C2=100 pF RF OUT
RF IN
ASX601

C3=10 pF 4.5 mm 4.5 mm C4=7.5 pF

S-parameters & K-factor

25 0

20 o -5
-40 c
o
25 c
o
85 c
15 -10
Gain (dB)

S11 (dB)

10 -15 o
-40 c
o
25 c
o
85 c
5 -20

0 -25
600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200
Frequency (MHz) Frequency (MHz)

0 5

-5 4
Stability Factor

-10 3
S22 (dB)

-15 o 2
-40 c
o
25 c
o
85 c
-20 1

-25 0
600 700 800 900 1000 1100 1200 500 1000 1500 2000 2500 3000 3500
Frequency (MHz) Frequency (MHz)

5/12 ASB Inc. • sales@asb.co.kr • Tel: +82-42-528-7223 December 2008

 ASX601
250-2500 MHz MMIC Amplifier

Current vs. Temperature Gain vs. Temperature

1100 22

1000 20

900 18
Current (mA)

Gain (dB)
800 16

700 14

Frequency = 880 MHz

600 12

500 10
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
o o
Temperature ( C) Temperature ( C)

P1dB vs. Temperature Output IP3 vs. Tone Power (Frequency = 880 MHz)
38 80

70
36
60

34
Output IP3 (dBm)

50
P1dB (dBm)

32 40

30
30 o
-40 c
20 o
Frequency = 880 MHz 25 c
o
28 85 c
10

26 0
-60 -40 -20 0 20 40 60 80 100 13 14 15 16 17 18 19 20 21 22 23 24 25 26
o
Temperature ( C) Pout per Tone (dBm)

6/12 ASB Inc. • sales@asb.co.kr • Tel: +82-42-528-7223 December 2008

 ASX601
250-2500 MHz MMIC Amplifier

Frequency (MHz) 935~960

Magnitude S21 (dB) 16
APPLICATION CIRCUIT
Magnitude S11 (dB) -15
Magnitude S22 (dB) -12
GSM Tx Output P1dB (dBm) 34
935 ~ 960 1)
Output IP3 (dBm) 49
Noise Figure (dB) 5.5
+5 V
Supply Voltage (V) 5
Current (mA) 850
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.

Board Layout (FR4, 40x40 mm2, 0.8T)

Schematic
Vcc=5 V

D1=5.6V
Zener Diode

C6=1 µF

C5=100pF

L1=100 nH
(Coil Inductor)
C1=100 pF C2=100 pF RF OUT
RF IN
ASX601

C3=9 pF 4.5 mm 3.5 mm

C4=9 pF

S-parameters & K-factor

25 0

-5
20

-10
15
Gain (dB)

S11 (dB)

-15

10
-20

5
-25

0 -30
600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200

Frequency (MHz) Frequency (MHz)

0 5

-5 4
Stability Factor

-10 3
S22 (dB)

-15 2

-20 1

-25 0
600 700 800 900 1000 1100 1200 500 1000 1500 2000 2500 3000 3500

Frequency (MHz) Frequency (MHz)

8/12 ASB Inc. • sales@asb.co.kr • Tel: +82-42-528-7223 December 2008

 ASX601
250-2500 MHz MMIC Amplifier

Outline Drawing (in mm)

Function Pin No.

Input 1
Ground 2
Output 3
3

2 2

Mounting Recommendation (in mm)

Note: 1. Add as much copper as possible to inner and outer layers

near the part to ensure optimal thermal performance.
2. To ensure reliable operation, device ground paddle-to-
ground pad soldering is critical.
3. Add mounting screws near the part to fasten the board to a
heat sinker. Ensure that the ground / thermal via region con-
tacts the heat sinker.
4. A proper heat dissipation path underneath the area of the
PCB for the mounted device is strictly required for proper
thermal operation. Damage to the device can result from in-
appropriate heat dissipation.

ESD Classification

HBM Class 1B
Voltage Level: 500 V~1000 V
MM Class A
Voltage Level: <200 V
CAUTION: ESD-sensitive device!

Moisture Sensitivity Level (MSL)

Level 3 at 260°C reflow

12/12 ASB Inc. • sales@asb.co.kr • Tel: +82-42-528-7223 December 2008