ELCT 563 – Semiconductor Electronic Devices

Day, Time, Location, and Instructor:

Meeting Times: Tuesday and Thursday

12:30 – 1:45 PM,

Asif Khan
Office: SWGN 3A26

asif@cec.sc.edu

Course Homepage URL:

www.ee.sc.edu/classes/Spring11/elct563/
d / l /S i 11/ l t563/
 Dr. Asif Khan
Office: SWGN 3A26
asif@cec.sc.edu
Meeting Times: Tuesday and Thursday
12:30 – 1:45 pM,

Dr. A.
Dr A Tarakji
Office: M(300 Main) C-113 B
Tarakji@cec.sc.edu

Select the link on left to navigate

 Dr. A. Tarakji
Office: M(300
( Main)) C-113 B
Tarakji@cec.sc.edu
Mr. Huaxi Zheng (2D-11, 7-7569)
zheng23@email.sc.edu
Mr. Ehtesham Quddus (7-5004)
quddus@email.sc.edu

Select the link on left to navigate

 Course textbook:

Solid State Electronic Devices

by Ben Streetman
ISBN: 9780131497269
 Additional reading:

Getting to Know Semiconductors

by M. E. Levinshtein, G. S. Simin
World Scientific Pub Co.
ISBN: 9810207603

Transistors:
From Crystals to Integrated Circuits
by M. E. Levinshtein, G. S. Simin
World Scientific Pub Co.
ISBN: 9810227434
 ELCT563 Syllabus
Topic Text book
reference*
1 Basic
1. B i properties
i off semiconductors
i d Ch 33, 4
Ch.
2. Junctions, diodes and contacts Ch. 5
3. Field-Effect transistors Ch. 6
(JFET, MESFET, HEMT, MOSFET)
4 Bipolar junction transistors
4. Ch 7
Ch.
5. Optoelectronic devices Ch. 8
6 Integrated
6. I t t d circuits
i it Ch 9
Ch.
7. Microwave and high-power devices Ch. 10
(Tunnel diode
diode, Gunn diode
diode, Thyristor)

* Additional course material can also be used and will appear in the class notes.6
01 Introduction; ELCT563 Lecture list
02 Semiconductors I – Intrinsic;
03 Semiconductors II-Doped & transport;
04 P-n junction basics;
05 Reverse biased junction & breakdown;
06 Diode rectifier
rectifier, p-n
p n junction at forward bias;
07 P-n junction capacitance;
08 Tunnel Diodes;
09 Schottky & Ohmic Contacts;
10 Photodiodes and LEDs;
11 Gunn Diodes;
12 SC diode equivalent circuits;
12a Diode equation solver.xls;
solver xls;
13 Midterm exam preview_cut;
14 Transistors - Introduction- FETs;
15 MOSFET threshold Voltage;
16 MOSFET II-V V and dCC-V;
V
17 MOSFET amplifiers & eq circuit;
18 CMOS;
19 JFETs MESFETs HFETs;;
20 Bipolar Juncton Transistor principles;
21 BJT circuits, gain and design;
22 BJT high-freq equiv circuits; 7
 ONLINE homework assignments using LON-CAPA

http://lon-capa.engr.sc.edu

Login name: same as your EE account name

Initial password:
LC+xxxx
LC+
where “+” is the “plus sign” and xxxx is the last 4 digits of your
SSN.
After the first logon you can change it. A good practice would be to
match your ENGINEERING domain password.

Absence from more than 10% of scheduled class sessions

excused or un-excused mayy result in a ggrade p
penalty.
y

8
 A
Assessment and
d grading
di

Homeworks and quizzes 40%

Midterm exam and tests 30%

Final exam 30%

Total 100%

Additional assignments will be included in the HWs and

tests for graduate students
A
Approximate
i t grading
di scale
l

score ≥ 90: A
85 ≤ score <90: B+
80≤ score <85: B
75≤ score <80: C+
70≤ score <75: C
60≤ score <70: D
score < 60: F
 Old economic wisdom

Adam Smith, "An Enquiry into Nature and

Causes of the Wealth of Nations" (1776)

The wealth is created by a laissez-faire economy and free trade

John Maynard Keynes, The General Theory of

Employment, Interest, and Money (1936)

The wealth is created by careful government planning and

governmentt stimulation
ti l ti off economy.
 Modern economic wisdom

Paul Romer, an economist and professor at

Stanford University (1990s)

The wealth is created by innovations and inventions,

such as computer chips.
chips

Electronic industry is now

the largest industry in the US

Electronic industry produces 106 - 107 transistors per

person per year
Semiconductor devices are WIDELY used
Solid state Lighting
 Resistors

Capacitors
p Transistors

PDP-11 Computer Portable computer

Size Micromeeters
Sizee centimetters

Inductors Circuit Boards

Audio Amplifier i-pod nano

Vacuum Tubes
What are the different semiconductor devices?
Microwave devices:
~800 pages; Varactors, Schottky diodes,
transit time devices,
data on over bipolar junction transistors
180 devices (BJTs), heterostructure
(only main bipolar transistors (HBTs),
MOSFETs, MESFETs, and
device types high electron mobility
included) transistors (HEMTs).

Time required to learn all of these devices

one-by-one: lifetime
 What are the different semiconductor devices?

Number of key device

concepts:
t
Number of device types: Thousands 10 - 20

Alt
Alternative
ti approach:
h llearn the
th key
k concepts.
t
Time required: One semester (ELCT 563)
 History of Semiconductors
Seebeck

von Siemens

1821: Thomas Seebeck discovered semiconductor

properties of PbS
1833: Michael Faradayy reported
p on conductivity
y
temperature dependence of semiconductors
1875: Werner von Siemens invented a selenium photometer
1878 Alexander
1878: Al d G Graham
h B
Bellll used
d thi
this d
device
i ffor wireless
i l
optical communications
1907 Round demonstrated the first LED (using SiC)
1940 Russell Ohl discovered a p-n junction diode
 History of Semiconductors
Russell Ohl – Inventor of a p-n junction (1940)

In 1939, vacuum tubes were state of the art in

radio equipment. Most scientists agreed tubes
were the
h future
f for
f radio
di andd telephones
l h
everywhere.

Russell Ohl didn't agree. He kept right on

studying crystals, occasionally having to fight
Bell Labs administration to let him do it.
it
 History of Semiconductors
1947: Bardeen,
Bardeen Brattain,
Brattain and Shockley discovered a
Bipolar Junction transistor
"The Transistor was probably the
most important invention of the 20th
Century…”
Th American
The A i Institute
I tit t off Physics
Ph i
 Transistors

First
First Integrated Intel’s 1.7 Billion
Transistor,
Circuit, Transistor Chip
1947
1958 2004

The Nobel Prize in Physics 1956

 More recent history

1954, Chapin, Fuller, and Pearson developed a solar cell.

1958, John Kilby, invented the Integrated Circuit (IC).
1958, Leo Esaki discovered a tunnel diode (Esaki diode).
1960, Kahng and Atalla demonstrated the first MOSFET.
1962,, three ggroups
p headed byy Hall,, Nathan,, and Quist
demonstrated a semiconductor laser.
1963, Gunn discovered microwave oscillations in GaAs and
InP (Ridley-Watkins-Hilsum-Gunn effect).
1963, Wanlass and Sah introduced CMOS technology
 After: crepuscule.sourceforge.net/archive5.html

109

108

107

106

105

104

1972 1977 1982 1987 1992 1997 2002 2007

 Transistor technology evolution
1995
Power PC 620 (Apple, IBM, and Motorola)
• 0.5 micron CMOS technology,
gy
• 133 MHz clock rate WHAT IS CMOS?
• 7 million transistors
• 3.3
3 3 V power supply WHY SO MUCH?
• 30 W power dissipation WHY SO SMALL?
2007: 45 nm technology WHY high
high-kk dielectric?
 ELCT 563
is one of the core courses in the department of
electrical
l t i l engineering.
i i
The students will gain understanding and will be able
to solve problems on basic semiconductor material
properties, principles and characteristics of
semiconductor pp-n jjunction and Schottkyy diodes,
field-effect transistors (JFETs, MESFETs, and
MOSFETs), and bipolar junction transistors.
ELCT 563 Goals and Objectives
Microchip
ELCT 563 Goals and Objectives
Microchip-internet