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state amplifiers
EME Conference 2010, Dallas Texas
Goran Popovic AD6IW
Performance reliability and life expectancy of RF semiconductor devices are
inversely related to the device temperature. Reduction in the device temperature
corresponds to an exponential increase in the reliability and life expectancy of the
device
Lower power consumption, longer battery life
Lower heath dissipation, smaller amplifier size, weight and heat sink size
Lower Power supply and heat sink requirements
Better Amplifier Linearity
Lower Cost
Possibilities to mount amplifier and PSU close to antenna and eliminate cable loss
Overview:
Drain efficiency
GaAs MESFET, higher mobility – higher frequencies, 200W @ 2GHz, 40W @ 20GHz,
100W at S band
RF Transistors Technologies
PHEMT High efficiency up to 45GHz, and useful to 80GHz,
40W at L band
Ka Band 20 % to max. 30 %
LDMOS, Power densities ten times that of a GaAs MESFET, high thermal
2GHz.
RF Transistors Technologies
GaN HEMT same as SiC even higher mobility and higher operational
frequencies, High breakdown voltage, low thermal resistance,
8W at 10GHz with 30% efficiency. Soft compression, not for class A, but
ideal for AB, E, F class. High cost.
HBT, SiGe experimental power amplifier HBT 200W at L band
Wideband amps, low efficiency 2-18GHz 10 %
TWT 60 %
RF Transistors Technologies
Class A amplifier, high quiescent current, 360 deg
Conducting angle, highest gain, frequency and
Linearity. Low efficiency, theoretical 50 %
SG DUT
SA VSWRmax 3:1
TCASE HTC=
Heat Transfer Compound
die 1&2 die 3&4
m m
1 mm
m
Ths
10 mm
m
m
0.18
0.16
Thermal impedance Zth j-case[K/W]
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
5 4 3
1 10 1 10 1 10 0.01
Kth(W/m DegC)
Alumina 37
AiN 230
BeO 250
GaAs 46
GaN 130
Si 145
SiC 350
Diamond 689
Copper 393
Requirements:
Thermal and electric conductivity,
expansion factor
Materials :
Copper, Tungsten/Copper-W/Cu,
Molybdenum/Copper-Mo/Cu,
Mo/Cu/Mo
Interface Pads,
Indium foil,
Copper foil,
PGS and TGON pad
AMP A 50 AMP A
RF_INP RF_OUT
RF_INP 90 deg 90 deg 100 100
50
AMP B AMP B
Branch coupler Wilkinson Divider
RF_OUT
AMP A 50
AMP A
90 deg
RF_INP
180 180
deg deg RF_INP RF_OUT
100 100
50
AMP B
90 deg
RF_OUT AMP B
Wilkinson Divider
Balanced
Amplifier AB
class Balanced
Amplifier AB
class
AMP 50
A AMP 50
90 90 A
deg deg 90 90
deg deg
50 AMP B
3dB Xinger 3dB Xinger 50
100 AMP B
3dB Xinger 3dB Xinger
RF_INPUT
RF_OUTPUT 100
Wilkinson div. Wilkinson div.
100 Wilkinson div. Wilkinson div.
100
AMP 50
A AMP 50
90 90 A
deg deg 90 90
deg deg
50 AMP B
3dB Xinger 3dB Xinger 50 AMP B
3dB Xinger 3dB Xinger
RF_INPUT
100
100
Wilkinson div.
Wilkinson div.
RF_OUTPUT
AMP 50
A
90 90
deg deg
50 AMP B
3dB Xinger 3dB Xinger
100
100
Wilkinson div.
Wilkinson div.
AMP 50
A
90 90
deg deg
50 AMP B
3dB Xinger 3dB Xinger
VSWR
Rdiss = 25W
Pout = 500W
Rho = SQRT Rdiss / Pout
VSWR = rho + 1/ rho - 1
VSWRmax = 1.6
References