PD - 9.

1303B

IRFZ44N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
l 175 °C Operating Temperature VDSS = 55V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 0.022Ω
G

ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  160
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ‚ 210 mJ
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 1.4
RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
RθJA Junction-to-Ambient –––– –––– 62

8/25/97
IRFZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.022 Ω VGS = 10V, ID = 25A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 17 ––– ––– S VDS = 25V, I D = 25A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 65 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 12 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 27 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 7.3 ––– VDD = 28V
tr Rise Time ––– 69 ––– ID = 25A
ns
td(off) Turn-Off Delay Time ––– 47 ––– RG = 12Ω
tf Fall Time ––– 60 ––– RD = 1.1Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
LS Internal Source Inductance ––– –––
––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 1300 ––– VGS = 0V

Coss Output Capacitance ––– 410 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 49
(Body Diode) showing the
A
ISM Pulsed Source Current ––– ––– 160 integral reverse G

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, I S = 25A, VGS = 0V „
t rr Reverse Recovery Time ––– 65 98 ns TJ = 25°C, I F = 25A
Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ I SD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS ,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C

‚ VDD = 25V, starting TJ = 25°C, L = 470µH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 25A. (See Figure 12)
 IRFZ44N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rc e C u rre n t (A )

I , D ra in -to -S o u rc e C u rre n t (A )
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V
100 100

4 .5V
10
4.5 V
10
D

D
2 0µ s PU LSE W ID TH 20 µs PU L SE W ID TH
TC = 2 5°C T C = 175 °C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
I D = 41 A
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
I D , D r ain- to-S ourc e C u rre nt (A )

2.0

TJ = 2 5 °C
100
(N o rm a liz e d )

TJ = 1 7 5 ° C 1.5

1.0

10

0.5

V DS = 2 5 V
2 0 µ s PU L SE W ID TH V G S = 10 V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

V G S , Ga te-to-S ource V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRFZ44N
2500 20
V GS = 0V , f = 1MH z I D = 25 A
C is s = C gs + C g d , Cds SH OR TED V D S = 44 V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rs s = Cgd V D S = 28 V
2000 C os s = C ds + C gd 16
C iss
C , C a p a c ita n c e (p F )

1500 12
C os s

1000 8

C rss
500 4

FO R TEST C IRC U IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60 70
V D S , Drain-to-Source V oltage (V) Q G , T otal G ate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

100 100 10µ s

TJ = 175 °C

100µ s

TJ = 25°C
10 10
1m s

T C = 25 °C 10m s
T J = 17 5°C
VG S = 0 V S ing le Pulse
1 A 1 A
0.5 1.0 1.5 2.0 2.5 3.0 1 10 100
V S D , Source-to-D rain Voltage (V) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFZ44N
RD
VDS
50
VGS
D.U.T.
RG
40 +
- VDD
I D , Drain Current (A)

10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20
Fig 10a. Switching Time Test Circuit
VDS
10 90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C) 10%
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFZ44N

L
VDS 500
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
D.U.T. TO P 10 A
1 8A
RG + B OTTO M 25 A
400
V
- DD

10 V IAS
300
tp
0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 200

V(BR)DSS
100
tp
VDD
VD D = 2 5V
0 A
25 50 75 100 125 150 175
VDS Starting T J , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFZ44N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFZ44N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB

E X AM PLE : T HI S IS A N IRF 1010

W IT H A S S E MB LY A
LO T CO DE 9B 1M IN TE R NA T ION A L P A RT NU M BE R
R EC T IF IER
IR F 1010
LO GO 9246
9B 1M D A TE C OD E
A S S EM B LY (Y YW W )
LO T CO DE Y Y = YE A R
W W = W E EK

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97