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Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication

Engineering, Prime University, Bangladesh.

Electrical and Electronic Engineering (EEE)


Subject: Elementary Electronic.
Solution of True/False with possible explanation

Write “T” for TRUE and “F” for FALSE against the following Statements.

1) n-type impurities are also known as acceptors. F


(N-type impurity is called pentavalent impurity i.e Donor)
2) Majority carrier of a p-type material is electrically neutral. F
(Electrically positive charged)
3) A p-n junction diode offers very high resistance under forward biased condition. F
(Very low resistance and barrier voltage of 0.3V for Ge & 0.7V for Si.)
4) Collector-base junction must be reverse biased in the active mode operation of BJT. T
(Active Mode: E-B forward Biased and C-B reversed biased)
5) MOSFET is basically a current controlled voltage source. F
(Drain to Gate voltage Vgs controlled channel current. So, voltage controlled current souce)
6) Emitter bypass capacitor is used to block dc components of output signals of common-
emitter amplifier. T
(Passes AC signal to ground, maintaining a constant DC at the emitter, so increasing
amplifier gain and stability.)
7) Threshold voltage of an n-channel MOSFET is negative. T
The threshold voltage for a depletion NMOS device is negative (i.e., Vt <0). While the
threshold voltage for a depletion PMOS device is positive (i.e., Vt > 0).
8) Differential amplifier can be used to eliminate noise from the information signal. T

9) CMOS stands for coupled metal oxide semiconductor. F


CMOS= Complementary Metal Oxide Semiconductor
10) Open loop gain of an operational amplifier is very low. F
The open loop gain of the op amp is very large (more than 100000). This means that tiny
differences in the input voltages cause large changes in the op amp output.
11) The amount of negative change is larger than the amount of positive change in an n-type
material. F
n-type material is positively charged.
12) A negative feedback is used to stabilize the gain of a feedback amplifier. T
Negative feedback stabilizes the gain by reducing the gain of the amplifier.

13) Majority carrier of a p-channel MOSFET is electron. F


This sentence hasn’t mentioned whether it is DE MOSFET or E-only MOSFET!!!
For E-only MOSFET, majority carrier is holes.

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Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.

14) A FET is a voltage driven device. T


15) A class-B power amplifier is one in which the output transistor is biased at the middle of
load line. F
In Class A amplifier o/p transistor is biased at the middle of load line.
16) Higher value of percentage regulation indicates better quality of voltage regulator. F
Percentage voltage regulation (VR) should be close to zero. If VR=0 then for changing loads
terminal voltages doesn’t change.
17) Amplitude modulation index is the ratio of carrier signal amplitude to information signal
amplitude. F
Amplitude modulation index= Amplitude of info. Signal ÷ Amplitude of Carrier signal.
18) A load line illustrates all dc conditions that could exist within a circuit for a given value
of circuit parameters. T
In dc circuit, dc conditions can be current, voltage, resistance and operating point i.e. Q point.
All these information can be obtained from load line curve.
19) Emitter by pass capacitor is used to increase voltage gain of a BJT amplifier circuit. T
Bypass capacitor short circuits the Emitter resistor and only R L plus a very small internal
resistance acts as the transistors load increasing the voltage gain to its maximum.
20) A p-type material is positively charged. F
P-type material losses holes and becomes negatively charged.
21) A reverse biased p-n junction offers a constant high resistance for all values of applied
voltages. F
If we increase the reverse bias then depletion region will be wider thus resistance will be
higher but not constant. Variation in the reverse bias changes the width of depletion region thus
changes resistance.
22) BJT stands Binary junction Transistor. F
Bipolar Junction Transistor.
23) For a given MOSFET pinch off voltage increases with the increases of threshold voltage.
T

Pinch-off voltage increases with increasing bulk voltage and threshold voltage increase with bulk voltage. So,
pinch-off voltage increases as threshold voltage is increased.

24) Current series feedback is use to increase __________ with the voltage gain of a
feedback amplifier. T

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Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.

(I’m not sure about it!)


In Current series (shunt) feedback amplifier, current at the output is sampled and combined
with current at the input. Therefore, the feedback ideally is performed using an (output)
current-controlled current source (CCCS).
Since, current gain is increased so voltage gain should increase.
25) Input impedance of an operational amplifier is very high. T
High I/P impedance and low o/p impedance provides amplification.
26) BJT is basically a current amplifier & hence can’t be used for voltage amplification. F
BJT is certainly a current amplifier since it controls the current regulation but can be used as
voltage amplifier because change is base current changes collector voltage.
27) Gate current is the driving parameter for normal operation of an enhancement type n-
channel MOSFET. F
Gate to source voltage is the driving parameter since it changes the drain current.
28) Two p-n junction diode connected back-to-back can be use as a p-n-p transistor. T
29) Gain Bandwidth product of an oscillator circuit must be equal to 1 for sustained
oscillation. T
(I’m not sure about it!)
Sustained oscillation is the continued oscillation due to insufficient attenuation in the
feedback path. So its attenuation is very small.
bandwidth x gain = constant

The constant is often called the unity gain bandwidth. This is the bandwidth at which the
gain of the amplifier is 1.

For sustained oscillation gain should be close to unity.

30) An extrinsic semiconductor is electrically neutral. F


Impurity is added to intrinsic semiconductor to made extrinsic semiconductor electrically
either positive or negative charged.
31) A p-n junction diode offers very high resistance under forward–biased condition. F
32) A lode line illustrates all possible dc lode line. T
(I’m not sure about it)
Since there are all parameters current, voltage and resistance, so it should illustrate all
possible DC load line.
The load line diagram illustrates all possible values of collector current (IC) and the collector
voltage (VCE in this case) for a given load resistor (RC).

33) Holes are minority carries in an intrinsic semiconductor. F


In an intrinsic semiconductor the concentrations of both types of carriers (i.e. holes and
electrons) are ideally equal. Since the number of holes and electrons are equal so there are no
majority and minority carriers.

34) Clamping circuits change the dc level of the input signal. T


( Clamper circuit places an input signal to a different DC level. It does not change the peak-
to-peak or rms value of the waveform. It just places the signal either upward or downward of
reference level. )
35) FETs are voltage driven devices. T
36) Current through a JFET is zero under pinch-off condition. T

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Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.

In Pinch-off condition, the width of the channel decreases until no more current flows
between the Drain and the Source. i.e. Drain current is zero.

37) A zener diode behaves like a normal diode under forward- biased condition. T
Since the V-I characteristics curve at forward bias condition is same as rectifying diode.

38) Emitter bypass capacitor is used to increase the voltage gain of an emitter follower
circuit. T
The emitter bypass capacitor can provide an AC ground path for the emitter, increasing the
voltage gain of the amplifier at high frequency.

39) Collector base junction must be reverse biased in common base amplifier operation of a
BJT.
(This sentence hasn’t mentioned whether the BJT is in pnp or npn. !!!!)

Collector base junction must be reverse biased in common base amplifier operation of a PNP
BJT. T

40) In very low temperatures a semiconductor behaves like an insulator. T


Since semiconductor has negative temperature co-efficient.

41) An n-type semiconductor impurity into pure semiconductor produces p-type materials. F

N-type impurity (pantavelent impurity) creates n-type material.

42) In an intrinsic semiconductor the number of electrons in the conductor band is equal to
the number of holes. !!!!
(The question is not complete)
Complete question is “an intrinsic semiconductor the number of electrons in the conductor
band is equal to the number of holes in valence band.” T

43) Reverse breakdown voltage of zener-diode is 75v. T


(75Volt zener diode is available in market. So, a 75V zener diode will have a reverse
breakdown voltage of 75V)

44) P-n junction diodes offer vary high resistance under forward biased condition. F

45) Movement of the charged particles under an applied electric field causes diffusion
current. F

Diffusion current occurs before electric field is established.


Movement of the charged particles under an applied electric field causes Drift current.

46) Deflection layer in the p-type material of a p-n junction is positively charged. F

Depletion layer contains 2 deflection layers, one in p-type and other in n-type region. In P-
type material, deflection layer contains negative acceptor ions.

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Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.

47) Holes are basically absence of electrons in the valance band. T


As electrons moves from valence to conduction band and leave holes.

48) Reverse Saturation current in an p-n junction is positively charged. T


(how current can be positively charged?)

Reverse Saturation current in a p-n junction is positive. T


Reverse saturation current. A for Si and A for Ge. Though the value
is very low but certainly positive.

49. Effective mobility of holes is higher than that of electrons in intrinsic silicon. F
In intrinsic silicon, no. of holes equals the no. of electrons. Thus mobility of holes and
electrons are equal.